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    • 1. 发明专利
    • Resin-sealed semiconductor device, and die bonding material and sealing materialfor use therein
    • AU9031401A
    • 2002-04-08
    • AU9031401
    • 2001-09-28
    • HITACHI CHEMICAL CO LTD
    • KURAFUCHI KAZUHIKOSUZUKI NAOYAYASUDA MASAAKIKAWATA TATSUOSAKAI HIROYUKIKAWASUMI MASAO
    • C08G59/30C08L63/00H01L23/29H01L23/31H01L21/58H01L23/28C08L63/02C08K3/00
    • A resin-sealed semiconductor device which comprises a lead frame having a die bond pad and an inner lead, a semiconductor chip installed on the die bond pad via a die bonding material and a sealing material for sealing the semiconductor chip and the lead frame, wherein properties of the die bonding material and the sealing material after curing satisfies the following formulae: sigmae =2.0x10 xsigmaei formula (2) Ud>=4.69x10 xed formula (3) wherein sigmab (MPa)represents the flexural strength at break of the sealing material at 25°, Ui (N.m) and Ud (N.m) represent shear strain energies of the sealing material at a soldering temperature for the inner lead and the die bonding pad, respectively, at a peak temperature during soldering, where sigmae=(1/log(kd1))xEe1x(alpham-alphae1)xDeltaT1 formula (4), sigmaei=Ee2x(alphae2-alpham)xDeltaT2 formula (5), sigmaed=log(kd2)xEe2x(alphae2-alpham)xDeltaT2 Formula (6), kd1: a ratio of the flexural elastic modulus Ed1 (MPa) of the die bonding material at 25° to 1 MPa of elastic modulus (Ed1>1 MPa), kd2: a ratio of the flexural elastic modulus Ed2 (MPa) of the die bonding material at the peak temperature during the soldering to 1 MPa of elastic modulus (Ed2>1 MPa), Ee1: a flexural modulus (MPa) of the sealing material at 25°, Ee2: a flexural modulus (MPa) of the sealing material at the peak temperature during soldering, alphae1: an average thermal expansion coefficient (1/° C.) of the sealing material from forming temperature for the semiconductor to room temperature (25° C.), alphae2: an average thermal expansion coefficient (1/° C.) of the sealing material from the forming temperature for the semiconductor to a peak temperature during soldering, alpham: a thermal expansion coefficient (1/° C.) of the lead frame, DeltaT1: the difference (° C.) between the forming temperature for the semiconductor and the low temperature side temperature in the temperature cycle, and DeltaT2: the difference (° C.) between the forming temperature for the semiconductor and the peak temperature during soldering.