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    • 5. 发明公开
    • 액적 토출 장치 및 토출 검사 방법
    • 液滴喷射装置及喷射检测方法
    • KR20180008309A
    • 2018-01-24
    • KR20170088760
    • 2017-07-13
    • TOKYO ELECTRON LTD
    • KONTA YUUHAYASHI TERUYUKIOSHIMA KIYOMI
    • B05C11/00B05C5/02B05C11/10G01N35/00
    • 본발명은, 워크에액적을토출하는액적토출장치에서, 기능액의종류마다조정을하지않고, 검사용의매체에착탄된기능액적의촬상결과에근거하여적절히토출상태를조정할수 있도록한다. 액적토출장치(1)는, 워크에기능액의액적을토출하는노즐헤드(24)와, 해당노즐헤드(24)로부터의검사토출을, 검사필름(52)의발액성을가지는표면에서받는토출검사유닛(50)과, 검사필름(52)의표면에검사토출된액적을촬상하는토출검사카메라(31)와, 검사필름(52)의발액성을가지는표면을제전하는제전유닛(80)을구비하고, 액적의검사토출전에, 제전유닛(80)에의해, 검사필름(52)의표면을제전한다.
    • 本发明,在用于喷射液滴到工件上,而无需进行用于成像沉积在测试介质上的敌人功能液的结果的基础上,每种类型的功能液的调整的液体排放设备可以被调整到适当的喷射状态。 液滴喷射装置1设有喷嘴头(24),用于喷射的功能液的工作的液滴,喷出检查单元,用于接收所述喷嘴头24 robuteoui测试放电,具有测试膜中的表面52 uibal液体 (31),用于拾取检查并排出到检查膜(52)的表面上的液滴;以及排出单元(80),用于排出检查膜(52)的表面, 在液滴的测试放电之前,检测膜52的表面由排出单元80排出。
    • 7. 发明公开
    • 액적 토출 장치 및 액적 토출 조건 보정 방법
    • 液滴喷射装置及液滴喷射状态校正方法
    • KR20180021647A
    • 2018-03-05
    • KR20170104557
    • 2017-08-18
    • TOKYO ELECTRON LTD
    • HAYASHI TERUYUKIOSHIMA KIYOMISHIMAMURA AKINORI
    • H01L21/67H01L23/544
    • 검사토출된기능액의액적의라인센서에의한촬상결과에근거하여, 기능액의액적의토출조건을적절히보정한다. 액적토출장치(1)는, 워크(W)가탑재된워크스테이지(40)를액적토출노즐에대하여주 주사방향으로이동시키고, 워크(W) 상에액적토출노즐로부터기능액의액적을토출하여묘화하는것으로서, 라인을구비하고, 워크(W)에소정크기의마크가미리형성되며, 액적토출노즐로부터액적을워크스테이지(40) 상의워크(W)에검사토출하고, 워크(W) 상의검사토출된액적및 상기마크의촬상을라인센서(31)에의해실행하고, 촬상된마크의주 주사방향에따른길이에근거하여, 상기액적의촬상결과를보정하고, 상기보정한액적의촬상결과에근거하여, 액적토출노즐로부터의토출조건을보정한다.
    • 基于检测到的功能液体的液滴的线传感器的成像结果适当地校正功能液体的液滴排出状况。 液滴喷射装置1使安装有工件W的工件台40在主扫描方向上移动到液滴喷嘴,并将液滴从液滴喷嘴喷出到工件W上 并且,液滴从液滴喷出喷嘴向工件台40上的工件W喷出,进行工件W的检查, 通过线传感器31执行喷射液滴和标记图像,并基于沿着捕获标记的主扫描方向的长度校正液滴的成像结果, 校正来自液滴喷嘴的喷射状态。
    • 8. 发明专利
    • DE60028091D1
    • 2006-06-22
    • DE60028091
    • 2000-12-28
    • TOKYO ELECTRON LTD
    • MARUMO YOSHINORISUZUKI KANAMEHAYASHI TERUYUKITANAHASHI TAKASHI
    • C30B35/00G01N27/62C03B20/00C03C15/00C30B31/10G01N1/32G01N1/34G01N1/40G01N19/06G01N21/31G01N21/73
    • Quartz member such as a quartz tube for semiconductor manufacturing equipment capable of heat treating a substrate to be treated without causing contamination, a manufacturing method of such quartz member, thermal treatment equipment furnished with such quartz member, and an analysis method of metal in quartz member are provided. A quartz specimen is immersed in hydrofluoric acid to expose a layer to be analyzed located at a prescribed depth. On an exposed surface, a decomposition liquid such as hydrofluoric acid or nitric acid is dripped to decompose only an extremely thin layer to be analyzed, followed by recovering of the decomposition liquid. The decomposition liquid is quantitatively analyzed by use of atomic absorption spectroscopy (AAS) or the like to measure an amount of metal contained in the decomposition liquid. From a difference of thicknesses before and after the decomposition and an area of dripped decomposition liquid, a volume of a decomposed layer to be analyzed is obtained. From this and the amount of metal contained in the decomposition liquid, a concentration of metal contained in the layer to be analyzed, in addition a diffusion coefficient of a layer to be analyzed is calculated. With thus obtained diffusion coefficient as an index, quartz material in which metal diffuses with difficulty is sorted out. With thus sorted quartz material, a quartz member used for semiconductor manufacturing equipment such as a quartz tube is manufactured.