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1. 发明公开

EP0165433A2 High-speed field-effect transistor 失效
标题翻译：高速场效应晶体管。
公开(公告)号：EP0165433A2
公开(公告)日：1985-12-27
申请号：EP85105648.1
申请日：1985-05-08
申请人： HITACHI, LTD.
发明人： Umemoto, Yasunari , Takahashi, Susumu , Ono, Yuichi
IPC分类号： H01L29/76 , H01L29/64
CPC分类号： H01L29/4916 , H01L29/432 , H01L29/4966 , H01L29/802 , H01L29/803 , Y10S148/053 , Y10S148/072 , Y10S148/088 , Y10S148/097
摘要： Herein disclosed is a semiconductor device in which control means for carriers migrating in a first semiconductor (11) includes an interface state layer (12) lying on the first semiconductor (11) and a second conductor layer (13) lying on the interface state layer (12). The interface state layer (12) has its Fermi level pinned to that of the second semiconductor layer (13). By thus constructing an FET or the semiconductor device, an inversion or storage layer can be easily formed in the interface merely by applying a voltage to the control means.

2. 发明公开

EP0148031A2 Semiconductor device 失效
标题翻译： Halbleiteranordnung。
公开(公告)号：EP0148031A2
公开(公告)日：1985-07-10
申请号：EP84309131.5
申请日：1984-12-28
申请人： HITACHI, LTD.
发明人： Usagawa, Toshiyuki Hitachi-dai , Ono, Yuichi , Takahashi, Susumu
IPC分类号： H01L29/76
CPC分类号： H01L29/7787 , H01L29/7722
摘要： Disclosed is a semiconductor device comprising a control electrode (30) for forming carriers at a junction interface between first and second layers (17.12) of different materials and for controlling the carriers, a first electrode (29) which is electronically connected to the carriers, and a second electrode region (18) for taking out the carriers in a direction perpendicular to the junction interface. Since the two-dimensional carriers are caused to flow as a current in the direction perpendicular to the plane at which the carriers exist, a large current can be derived as an operating current.
摘要翻译：公开了一种半导体器件，包括用于在不同材料的第一和第二层（17,12）之间的结界面处形成载流子并用于控制载流子的控制电极（30），第一电极（29），电连接到以及用于在垂直于接合界面的方向上取出载流子的第二电极区域（18）。由于使二维载流子作为电流在与载流子存在的平面垂直的方向上流动，所以可以导出大的电流作为工作电流。

3. 发明授权

EP0227426B1 Semiconductor laser 失效
公开(公告)号：EP0227426B1
公开(公告)日：1994-03-23
申请号：EP86309843.0
申请日：1986-12-17
申请人： HITACHI, LTD.
发明人： Uomi, Kazuhisa , Yoshizawa, Misuzu , Ono, Yuichi , Chinone, Naoki , Kajimura, Takashi
IPC分类号： H01S3/101 , H01S3/25 , H01S3/19
CPC分类号： H01S5/4031 , H01S5/06243 , H01S5/4075

4. 发明公开

EP0227426A2 Semiconductor laser 失效
标题翻译：半导体激光
公开(公告)号：EP0227426A2
公开(公告)日：1987-07-01
申请号：EP86309843.0
申请日：1986-12-17
申请人： HITACHI, LTD.
发明人： Uomi, Kazuhisa , Yoshizawa, Misuzu , Ono, Yuichi , Chinone, Naoki , Kajimura, Takashi
IPC分类号： H01S3/101 , H01S3/25 , H01S3/19
CPC分类号： H01S5/4031 , H01S5/06243 , H01S5/4075
摘要： A semiconductor laser with an active layer (3) between two cladding layers (2,4) has grooves (30) formed in the substrate (1) below the lower cladding layer (2) and corresponding diffusion regions (6) with additional diffusion regions (6) between the grooves. This defines stripe regions in the laser device. Electrodes (7) are associated with the diffusion regions (6) forming part of the stripe regions, and electrodes (8) are associated with the other diffusion regions, in the gaps between the stripes. By applying a current to the electrodes 8 only, the fundamental supermode of the laser is excited, whilst by applying a current to the electrodes 7 only, a supermode of the highest order is excited. Since these two supermodes cause the emission of laser radiation at different angles, the angle of laser radiation from the device may be changed by changing the pattern of current to the electrodes (7,8).
Other embodiments achieve a change in the direction of the laser radiation by the use of electrodes with gaps, and by the use of electrodes outside the part of the device containing the stripe regions.
摘要翻译：在两个包层（2,4）之间具有有源层（3）的半导体激光器具有在下包层（2）下面的衬底（1）中形成的凹槽（30）和具有附加扩散区域（6）的对应扩散区域（6）在凹槽之间。这定义了激光器中的条纹区域。电极（7）与形成条纹区域的一部分的扩散区域（6）相关联，并且电极（8）与条纹之间的间隙中的其他扩散区域相关联。通过仅向电极8施加电流，激光的基本超级模式被激发，而仅通过向电极7施加电流，激发最高阶的超级模式。由于这两种超模以不同的角度发射激光辐射，因此可以通过改变电极（7,8）的电流模式来改变器件的激光辐射角度。其他实施例通过使用具有间隙的电极以及通过使用包含条纹区域的装置部分外部的电极来实现激光辐射方向的改变。

5. 发明授权

EP0358842B1 Semiconductor laser device and method of manufacturing same 失效
标题翻译：相同的半导体激光器及其制造方法
公开(公告)号：EP0358842B1
公开(公告)日：1996-08-21
申请号：EP89106800.9
申请日：1989-04-17
申请人： HITACHI, LTD.
发明人： Tanaka, Toshiaki , Kajimura, Takashi , Kawano, Toshihiro , Ono, Yuichi
IPC分类号： H01S3/19 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/2219 , H01S5/2231 , H01S5/3086 , H01S5/34 , H01S5/3432

6. 发明授权

EP0148031B1 Semiconductor device 失效
公开(公告)号：EP0148031B1
公开(公告)日：1991-07-17
申请号：EP84309131.5
申请日：1984-12-28
申请人： HITACHI, LTD.
发明人： Usagawa, Toshiyuki Hitachi-dai , Ono, Yuichi , Takahashi, Susumu
IPC分类号： H01L29/76
CPC分类号： H01L29/7787 , H01L29/7722

7. 发明公开

EP0358842A3 Semiconductor laser device and method of manufacturing same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：EP0358842A3
公开(公告)日：1990-10-10
申请号：EP89106800.9
申请日：1989-04-17
申请人： HITACHI, LTD.
发明人： Tanaka, Toshiaki , Kajimura, Takashi , Kawano, Toshihiro , Ono, Yuichi
IPC分类号： H01S3/19 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/2219 , H01S5/2231 , H01S5/3086 , H01S5/34 , H01S5/3432
摘要： A high-power low-noise semiconductor laser device required for light sources for an erasable optical disc and a method of manufacturing the device are disclosed. Especially, a self-sustained pulsating semiconductor laser device is disclosed in which an MQW structure is used for an active layer (4, 44 or 44a), and thus a kink output power and a light output power by which the self-pulsation is enabled are increased to 10 mW or more and noise is reduced. Another semiconductor laser device of a self-pulsation type is disclosed in which impurities are doped in the active layer to reduce the self-pulsating frequency to obtain a low-noise characteristic even if higher optical feeback occurs.

8. 发明公开

EP0148031A3 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：EP0148031A3
公开(公告)日：1987-07-01
申请号：EP84309131
申请日：1984-12-28
申请人： HITACHI, LTD.
发明人： Usagawa, Toshiyuki Hitachi-dai , Ono, Yuichi , Takahashi, Susumu
IPC分类号： H01L29/76
CPC分类号： H01L29/7787 , H01L29/7722
摘要： Disclosed is a semiconductor device comprising a control electrode (30) for forming carriers at a junction interface between first and second layers (17.12) of different materials and for controlling the carriers, a first electrode (29) which is electronically connected to the carriers, and a second electrode region (18) for taking out the carriers in a direction perpendicular to the junction interface. Since the two-dimensional carriers are caused to flow as a current in the direction perpendicular to the plane at which the carriers exist, a large current can be derived as an operating current.
摘要翻译：公开了一种半导体器件，包括用于在不同材料的第一和第二层（17.12）之间的接合界面处形成载流子并用于控制载流子的控制电极（30），电连接到载流子的第一电极（29）以及第二电极区域（18），用于在垂直于接合界面的方向上取出载体。由于使二维载流子在与存在载流子的平面垂直的方向上作为电流流动，因此可以导出大电流作为工作电流。

9. 发明公开

EP0358842A2 Semiconductor laser device and method of manufacturing same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：EP0358842A2
公开(公告)日：1990-03-21
申请号：EP89106800.9
申请日：1989-04-17
申请人： HITACHI, LTD.
发明人： Tanaka, Toshiaki , Kajimura, Takashi , Kawano, Toshihiro , Ono, Yuichi
IPC分类号： H01S3/19 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/2219 , H01S5/2231 , H01S5/3086 , H01S5/34 , H01S5/3432
摘要： A high-power low-noise semiconductor laser device required for light sources for an erasable optical disc and a method of manufacturing the device are disclosed. Especially, a self-sustained pulsating semiconductor laser device is disclosed in which an MQW structure is used for an active layer (4, 44 or 44a), and thus a kink output power and a light output power by which the self-pulsation is enabled are increased to 10 mW or more and noise is reduced. Another semiconductor laser device of a self-pulsation type is disclosed in which impurities are doped in the active layer to reduce the self-pulsating frequency to obtain a low-noise characteristic even if higher optical feeback occurs.
摘要翻译：公开了一种用于可擦除光盘的光源所需的高功率低噪声半导体激光器件及其制造方法。特别地，公开了一种自维持脉动半导体激光器件，其中MQW结构被用于有源层（4,44或44a），并且因此具有使得自脉动被启用的扭结输出功率和光输出功率增加到10 mW或更多，噪音降低。另一种自脉动型半导体激光装置被公开，其中，即使出现较高的光学反馈，杂质被掺杂在有源层中以降低自脉冲频率以获得低噪声特性。

10. 发明公开

EP0165433A3 High-speed field-effect transistor 失效
标题翻译：高速场效应晶体管
公开(公告)号：EP0165433A3
公开(公告)日：1987-05-27
申请号：EP85105648
申请日：1985-05-08
申请人： HITACHI, LTD.
发明人： Umemoto, Yasunari , Takahashi, Susumu , Ono, Yuichi
IPC分类号： H01L29/76 , H01L29/64
CPC分类号： H01L29/4916 , H01L29/432 , H01L29/4966 , H01L29/802 , H01L29/803 , Y10S148/053 , Y10S148/072 , Y10S148/088 , Y10S148/097
摘要： Herein disclosed is a semiconductor device in which control means for carriers migrating in a first semiconductor (11) includes an interface state layer (12) lying on the first semiconductor (11) and a second conductor layer (13) lying on the interface state layer (12). The interface state layer (12) has its Fermi level pinned to that of the second semiconductor layer (13). By thus constructing an FET or the semiconductor device, an inversion or storage layer can be easily formed in the interface merely by applying a voltage to the control means.

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