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1. 发明申请

WO2009099439A1 FIRING CELL 审中-公开
标题翻译：闪电
公开(公告)号：WO2009099439A1
公开(公告)日：2009-08-13
申请号：PCT/US2008/053153
申请日：2008-02-06
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , GHOZEIL, Adam, L. , PHILLIPS, Andrew , MAXFIELD, David , MAR, Eugene, J. , HEINECK, Matthew, P. , MACKENZIE, Mark, H.
发明人： GHOZEIL, Adam, L. , PHILLIPS, Andrew , MAXFIELD, David , MAR, Eugene, J. , HEINECK, Matthew, P. , MACKENZIE, Mark, H.
IPC分类号： B41J2/05 , B41J2/01
CPC分类号： B41J2/0458 , B41J2/04541 , B41J2/04543 , B41J2/0455
摘要： A system is provided that includes first means for pre-charging a node to a first potential where the node coupled to a switch configured to control current through a firing resistor and second means for selectively discharging the node to a second potential across a path that has only one transistor between the node and the second potential.
摘要翻译：提供了一种系统，其包括用于将节点预充电到第一电位的第一装置，其中耦合到被配置成控制通过点火电阻器的电流的开关的节点;以及第二装置，用于选择性地将节点放电到具有在节点和第二个电位之间只有一个晶体管。

2. 发明申请

WO2005010981A2 ARRAY OF NANOSCOPIC MOSFET TRANSISTORS AND FABRICATION METHODS 审中-公开
标题翻译：纳米MOSFET晶体管阵列和制造方法
公开(公告)号：WO2005010981A2
公开(公告)日：2005-02-03
申请号：PCT/US2004/020675
申请日：2004-06-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , GHOZEIL, Adam, L. , STASIAK, James , PETERS, Kevin, F. , KAWAMOTO, Galen, H.
发明人： GHOZEIL, Adam, L. , STASIAK, James , PETERS, Kevin, F. , KAWAMOTO, Galen, H.
IPC分类号： H01L21/8234
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/823437 , H01L29/1033 , H01L29/66575
摘要： A nanoscopic transistor (20) is made by forming an oxide layer on a semiconductor substrate (S10, S20), applying resist (S30), patterning the resist using imprint lithography to form a pattern aligned along a first direction (S40), applying a first ion-masking material over the pattern (S50), selectively lifting it off to leave a first ion mask to form a gate (S60), forming doped regions by implanting a suitable dopant (S70), applying another layer of resist (S90) and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction (S100), applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern (S120), and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask (S130). The method may be used to make an array (10 or 15) of nanoscopic transistors (20).
摘要翻译：通过在半导体衬底上形成氧化层（S10，S20），涂敷抗蚀剂（S30），使用压印光刻对抗蚀剂进行构图以形成沿着第一方向排列的图案（S40），制成纳米级晶体管（20）（S50），选择性地将其离开离开第一离子掩模以形成栅极（S60），通过注入合适的掺杂剂形成掺杂区域（S70），施加另一层抗蚀剂（S90）以及使用压印光刻对所述第二抗蚀剂层进行构图以形成沿着第二方向对准的第二图案（S100），在所述第二图案上施加第二离子掩模材料，选择性地将其提起以离开由所述第二图案限定的第二离子掩模（S120），并且通过根据第二离子掩模选择性地注入合适的第二掺杂剂而在衬底中形成第二掺杂区域（S130）。该方法可用于制造纳米级晶体管（20）的阵列（10或15）。

3. 发明申请

WO2006124323A1 PIXEL LOADING AND DISPLAY 审中-公开
标题翻译：像素加载和显示
公开(公告)号：WO2006124323A1
公开(公告)日：2006-11-23
申请号：PCT/US2006/017311
申请日：2006-05-05
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , KETTLE, Wiatt , GHOZEIL, Adam, L. , MARTIN, Eric
发明人： KETTLE, Wiatt , GHOZEIL, Adam, L. , MARTIN, Eric
IPC分类号： G09G3/20
CPC分类号： G09G3/2022 , G09G3/2018 , G09G3/34 , G09G2310/02 , H04N9/312 , H04N2005/7466
摘要： An embodiment provides for loading a first data bit intended for a first portion of a pixel array and displaying the first data bit on the first portion of the pixel array for at least a portion of its total display time before loading a second data bit intended for a second portion of the pixel array.
摘要翻译：一个实施例提供加载用于像素阵列的第一部分的第一数据位，并且在加载第二数据位之前，在其总显示时间的至少一部分之前，在像素阵列的第一部分上显示第一数据位，像素阵列的第二部分。

4. 发明申请

WO2004069412A1 MICROFLUIDIC DEVICE WITH THIN-FILM ELECTRONIC DEVICES 审中-公开
标题翻译：具有薄膜电子器件的微流体器件
公开(公告)号：WO2004069412A1
公开(公告)日：2004-08-19
申请号：PCT/US2004/002435
申请日：2004-01-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , PEASE, Grant , GHOZEIL, Adam, L. , DUNFIELD, John, Stephen , CHILDERS, Winthrop, D. , TYVOLL, David , SEXTON, Douglas, A. , CRIVELLI, Paul
发明人： PEASE, Grant , GHOZEIL, Adam, L. , DUNFIELD, John, Stephen , CHILDERS, Winthrop, D. , TYVOLL, David , SEXTON, Douglas, A. , CRIVELLI, Paul
IPC分类号： B01L3/00
CPC分类号： B01L7/525 , B01L3/5027 , B01L3/502715 , B01L2200/10 , B01L2200/147 , B01L2300/024 , B01L2300/0816 , B01L2300/0874 , B01L2300/1827 , B01L2300/1883 , B01L2400/0415 , Y10T436/11 , Y10T436/2575
摘要： A microfluidic device (90) for analysis of a sample. The microfluidic device includes a substrate portion (94) that at least partially defines a chamber (102) for receiving the sample. The substrate portion (94) includes a substrate (98) having a surface (96). The substrate portion (94) also includes a plurality of thin-film layers (110) formed on the substrate (98) adjacent the surface (96). The thin-film layers (110) form a plurality of electronic devices. Each of at least two of the electronic devices is formed by a different set of the thin-film layers (110). The at least two electronic devices may include 1) a temperature control device for controlling the temperature of fluid in the chamber (102), and 2) an other electronic device configured to sense or modify a property of fluid in the chamber (102).
摘要翻译：一种用于分析样品的微流体装置（90）。微流体装置包括至少部分地限定用于接收样品的室（102）的基底部分（94）。衬底部分（94）包括具有表面（96）的衬底（98）。衬底部分（94）还包括在邻近表面（96）的基底（98）上形成的多个薄膜层（110）。薄膜层（110）形成多个电子装置。至少两个电子器件中的每一个由不同的薄膜层组合（110）形成。所述至少两个电子装置可以包括：1）用于控制所述腔室（102）中的流体温度的温度控制装置，以及2）构造成感测或改变所述腔室（102）中的流体性质的另一电子装置。

5. 发明申请

WO2013165375A1 DEVICE INCLUDING ACTIVE FLOATING GATE REGION AREA THAT IS SMALLER THAN CHANNEL AREA 审中-公开
标题翻译：包括主要浮动门区域的设备比通道区域小
公开(公告)号：WO2013165375A1
公开(公告)日：2013-11-07
申请号：PCT/US2012/035892
申请日：2012-04-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , GE, Ning , GHOZEIL, Adam, L. , HO, Chaw Sing , BENJAMIN, Trudy
发明人： GE, Ning , GHOZEIL, Adam, L. , HO, Chaw Sing , BENJAMIN, Trudy
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L27/11517 , G11C16/0425 , H01L21/28158 , H01L21/288 , H01L21/32133 , H01L27/11521 , H01L27/11524 , H01L27/1156 , H01L29/1033 , H01L29/42324 , H01L29/66825 , H01L29/7881 , H01L29/7884
摘要： A device including a drain, a channel, a floating gate, and a control gate. The channel surrounds the drain and has a channel area. The floating gate includes an active floating gate region that has an active floating gate region area. The control gate is coupled to the active floating gate region via a control capacitance, wherein the active floating gate region area is smaller than the channel area.
摘要翻译：一种包括漏极，沟道，浮动栅极和控制栅极的器件。通道围绕排水沟并具有通道区域。浮置栅极包括具有有源浮栅区域的有源浮栅区域。控制栅极经由控制电容耦合到有源浮栅区域，其中有源浮栅区域小于沟道区域。

6. 发明申请

WO2013158105A1 INKJET ISSUE DETERMINATION 审中-公开
标题翻译： INKJET问题确定
公开(公告)号：WO2013158105A1
公开(公告)日：2013-10-24
申请号：PCT/US2012/034249
申请日：2012-04-19
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , VAN BROCKLIN, Andrew, L. , GHOZEIL, Adam, L. , HUNTER, Mark , LINN, Scott, A.
发明人： VAN BROCKLIN, Andrew, L. , GHOZEIL, Adam, L. , HUNTER, Mark , LINN, Scott, A.
IPC分类号： B41J2/045 , B41J2/07
CPC分类号： B41J2/04541 , B41J2/0451 , B41J2/0458 , B41J2/14153 , B41J2002/14354
摘要： Determining an issue in an inkjet nozzle may include activating (801) a drive bubble formation mechanism in an ink chamber to eject an ink droplet through the inkjet nozzle and measuring (802) the drive bubble in the ink chamber after the drive bubble formation mechanism is activated.
摘要翻译：确定喷墨喷嘴中的问题可以包括在墨水室中启动（801）驱动气泡形成机构以通过喷墨喷嘴喷射墨滴，并且在驱动气泡形成机构为驱动气泡形成机构之后测量（802）墨室中的驱动气泡活性。

7. 发明申请

WO2013015808A1 FLUID LEVEL SENSOR AND RELATED METHODS 审中-公开
标题翻译：流体传感器及相关方法
公开(公告)号：WO2013015808A1
公开(公告)日：2013-01-31
申请号：PCT/US2011/045585
申请日：2011-07-27
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , VAN BROCKLIN, Andrew, L. , LIEBERT, Paul, A. , GHOZEIL, Adam, L. , LINN, Scott, A.
发明人： VAN BROCKLIN, Andrew, L. , LIEBERT, Paul, A. , GHOZEIL, Adam, L. , LINN, Scott, A.
IPC分类号： B41J29/393 , B41J2/175
CPC分类号： B41J2/17566 , B41J2/0451 , B41J2/04555 , B41J2/0458 , B41J2/125 , B41J2/14153 , B41J2002/17579
摘要： In an embodiment, a fluid level sensor includes a sensor plate and a current source. The fluid level sensor also includes an algorithm to bias the current source such that current applied to the sensor plate induces a maximum difference in response voltage between a dry sensor plate condition and a wet sensor plate condition.
摘要翻译：在一个实施例中，液位传感器包括传感器板和电流源。液位传感器还包括用于偏置电流源的算法，使得施加到传感器板的电流在干传感器板条件和湿传感器板状况之间引起响应电压的最大差异。

8. 发明申请

WO2015167551A1 REGULATING MEMRISTOR SWITCHING PULSES 审中-公开
标题翻译：调节脉冲开关脉冲
公开(公告)号：WO2015167551A1
公开(公告)日：2015-11-05
申请号：PCT/US2014/036222
申请日：2014-04-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： GE, Ning , YANG, Jianhua , GHOZEIL, Adam, L. , BUCHANAN, Brent
IPC分类号： G11C11/00 , H03K17/00
CPC分类号： G11C13/0038 , G11C13/0002 , G11C13/0007 , G11C13/004 , G11C13/0064 , G11C13/0069 , G11C27/024 , G11C2013/0054 , G11C2013/0066 , G11C2013/0076 , G11C2013/0092
摘要： A device for regulating memristor switching pulses is described. The device includes a voltage source to supply a voltage to a memristor. The device also includes a voltage detector to detect a memristor voltage. The memristor voltage is based on an initial resistance state of the memristor and the voltage supplied by the voltage source. The device also includes a comparator to compare the memristor voltage with a target voltage value for the memristor. The device also includes a feedback loop to indicate to a control switch when the memristor voltage is at least equal to the target voltage value. The device also includes a control switch to cut off the memristor from the voltage source when the memristor voltage is at least equal to the target voltage value.
摘要翻译：描述了用于调节忆阻器切换脉冲的装置。该装置包括用于向忆阻器提供电压的电压源。该装置还包括检测忆阻器电压的电压检测器。忆阻器电压基于忆阻器的初始电阻状态和由电压源提供的电压。该器件还包括比较器，用于将忆阻器电压与忆阻器的目标电压值进行比较。当存储器电压至少等于目标电压值时，该装置还包括反馈回路以向控制开关指示。该装置还包括控制开关，当忆阻器电压至少等于目标电压值时，该开关用于从忆阻器与电压源切断。

9. 发明申请

WO2015116092A1 PRINTHEADS WITH SENSOR PLATE IMPEDANCE MEASUREMENT 审中-公开
标题翻译：带传感器板阻抗测量的PRINTHEADS
公开(公告)号：WO2015116092A1
公开(公告)日：2015-08-06
申请号：PCT/US2014/013796
申请日：2014-01-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： GHOZEIL, Adam, L. , LINN, Scott, A. , MAXFIELD, David , VAN BROCKLIN, Andrew
IPC分类号： B41J2/04 , B41J2/14 , B41J2/145
CPC分类号： B41J2/17566 , B41J2/1404 , B41J2002/14354 , B41J2002/17579
摘要： In an implementation, a printhead includes a nozzle and a fluid channel. A sensor plate is located within the fluid channel. An impedance measurement circuit is coupled to the sensor plate to measure impedance of fluid within the channel during a fluid movement event that moves fluid past the sensor plate.
摘要翻译：在一个实施方案中，打印头包括喷嘴和流体通道。传感器板位于流体通道内。阻抗测量电路耦合到传感器板，以在流体移动事件期间测量流体在通道内的阻抗，从而使流体流过传感器板。

10. 发明授权

EP2814668B1 INKJET ISSUE DETERMINATION 有权转让
公开(公告)号：EP2814668B1
公开(公告)日：2019-09-04
申请号：EP12874417.4
申请日：2012-04-19
申请人： Hewlett-Packard Development Company, L.P.
发明人： VAN BROCKLIN, Andrew, L. , GHOZEIL, Adam, L. , HUNTER, Mark , LINN, Scott, A.
IPC分类号： B41J2/045 , B41J2/07 , B41J2/14

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