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1. 发明申请

WO2005062384A3 METHOD OF FORMING BRIDGING LATERAL NANOWIRES AND DEVICE MANUFACTURED THEREBY 审中-公开
标题翻译：形成桥梁纳米线的方法及其制造的器件
公开(公告)号：WO2005062384A3
公开(公告)日：2005-09-15
申请号：PCT/US2004040597
申请日：2004-12-03
申请人： HEWLETT PACKARD DEVELOPMENT CO , ISLAM M SAIFUL , KAMINS THEODORE I , SHARMA SHASHANK
发明人： ISLAM M SAIFUL , KAMINS THEODORE I , SHARMA SHASHANK
IPC分类号： D01F9/127 , H01L21/768 , H01L23/532 , H01L51/30
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , G11C2213/16 , G11C2213/17 , H01L21/76838 , H01L23/53271 , H01L2221/1094 , H01L2924/0002 , Y10S977/721 , Y10S977/742 , H01L2924/00
摘要： A semiconductor nanowire (162, 660) is grown laterally. A method of growing (100) the nanowire forms (120) a vertical surface (118a, 118b, 610, 620) on a substrate (102, 630, 690), and activates (130) the vertical surface with a nanoparticle catalyst (160, 640, 642). A method of laterally bridging (200) the nanowire grows (210) the nanaowire from the activated vertical surface to connect to an opposite vertical surface (118a, 118b, 610, 620) on the substrate. A method of connecting (300) electrodes (610, 620) of a semiconductor device (600) grows (330) the nanowire from an activated (320) device electrode to an opposing device electrode. A method of bridging (400) semiconductor nanowires grows (410, 420, 430) nanowires between an electrode pairs opposing lateral directions. A method of self-assembling (500) the nanowire bridges (530) the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity (170) in the vertical surface. An electronic device (600) includes a laterally grown nano-scale interconnection (660).
摘要翻译：横向生长半导体纳米线（162,660）。在衬底（102,630,690）上生长（100）纳米线形成（120）垂直表面（118a，118b，610,620）的方法，并用纳米颗粒催化剂（160）激活垂直表面（130），640,642）。横向桥接（200）纳米线的方法从激活的垂直表面生长（210）纳米线，以连接到衬底上的相对的垂直表面（118a，118b，610,620）。连接（300）半导体器件（600）的电极（610,620）的方法从纳米线从激活的（320）器件电极生长（330）到相对的器件电极。桥接（400）半导体纳米线的方法在相对于横向方向的电极对之间生长（410,420,430）纳米线。一种在活化电极对之间自组装（500）纳米线桥（530）纳米线的方法。控制纳米线生长的方法在垂直表面形成表面不规则（170）。电子设备（600）包括横向生长的纳米级互连（660）。

2. 发明申请

WO2008121172A3 ELECTRODE ISOLATION METHOD AND NANOWIRE-BASED DEVICE HAVING ISOLATED ELECTRODE PAIR 审中-公开
标题翻译：具有隔离电极对的电极隔离方法和基于纳米线的装置
公开(公告)号：WO2008121172A3
公开(公告)日：2008-11-27
申请号：PCT/US2008000578
申请日：2008-01-16
申请人： HEWLETT PACKARD DEVELOPMENT CO , SHARMA SHASHANK , KAMINS THEODORE I
发明人： SHARMA SHASHANK , KAMINS THEODORE I
IPC分类号： H01L21/20
CPC分类号： H01L29/045 , A01H5/10 , B81C1/00095 , B82Y10/00 , H01L21/02381 , H01L21/02433 , H01L21/02521 , H01L21/02603 , H01L21/02609 , H01L21/02639 , H01L21/02645 , H01L21/02647 , H01L21/02653 , H01L21/28525 , H01L21/76838 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： Methods (100) of creating isolated electrodes and integrating (600) a nanowire there between each employ laterial epitaxial of a overgrowth of a semiconductor material on a semiconductor layer (210) to form isolated electrodes (260, 270) having the same crystal orientation. The methods (100, 600) include selective epitaxial growth (140) of a semiconductor feature (250) through a window (242) in an insulating film (240) on the semiconductor layer. A vertical stem (252) is in contact with the semiconductor layer through the window and a ledge (254) is a lateral epitaxial overgrowth of the vertical stem on the insulating film. The methods further include creating (160) a pair of isolated electrodes (260, 270) from the semiconductor feature and the semiconductor layer. A nanowire-based device (800) includes the pair of isolated electrodes and a nanowire (280) bridging between respective surfaces of the isolated electrodes of the pair.
摘要翻译：制造隔离电极并在其间集成（600）纳米线的方法（100）均采用半导体层（210）上的半导体材料的过度生长的外延外延以形成具有相同晶体取向的隔离电极（260,270）。方法（100,600）包括通过半导体层上的绝缘膜（240）中的窗口（242）的半导体特征（250）的选择性外延生长（140）。垂直杆（252）通过窗口与半导体层接触，凸缘（254）是绝缘膜上垂直杆的侧向外延过生长。该方法还包括从半导体特征和半导体层产生（160）一对隔离电极（260,270）。基于纳米线的器件（800）包括一对隔离电极和桥接在该对隔离电极的相应表面之间的纳米线（280）。

3. 发明申请

WO2007058909A3 METHOD OF CONTROLLING NANOWIRE GROWTH AND DEVICE WITH CONTROLLED-GROWTH NANOWIRE 审中-公开
标题翻译：控制生长纳米线的纳米线生长和器件的控制方法
公开(公告)号：WO2007058909A3
公开(公告)日：2007-07-26
申请号：PCT/US2006043688
申请日：2006-11-08
申请人： HEWLETT PACKARD DEVELOPMENT CO , WU WEI , KAMINS THEODORE I , SHARMA SHASHANK , WILLIAMS R STANLEY
发明人： WU WEI , KAMINS THEODORE I , SHARMA SHASHANK , WILLIAMS R STANLEY
IPC分类号： H01L21/283 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76879 , H01L21/28525 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： Nanowire (260, 360) growth in situ on a planar surface, which is one of a crystalline surface having any crystal orientation, a polycrystalline surface and a non-crystalline surface, is controlled by guiding (160) catalyzed growth from the planar surface in a nano-throughhole (224, 324) of a patterned layer (220, 320) formed on the planar surface, such that the nanowire (260, 360) grows in situ perpendicular to the planar surface. An electronic device (200, 300) includes first and second regions of electronic circuitry (280, 370, 380) vertically spaced by the patterned layer (220, 320). The nano-throughhole (224, 324) of the patterned layer (220, 320) extends perpendicularly between the regions. The first region (324, 376) has the planar surface. The device (200, 300) further includes a nanowire (260, 360) extending perpendicular from a catalyst location on the planar surface of the first region (374, 376) in the nano-throughhole (224, 324). The nanowire (260, 360) forms a component of a nano-scale circuit that connects the regions.
摘要翻译：在具有任何晶体取向的晶体表面，多晶表面和非晶体表面之一的平面表面上原位生长的纳米线（260,360）通过引导（160）来自平面表面的催化生长来控制形成在所述平坦表面上的图案化层（220,320）的纳米通孔（224,324），使得所述纳米线（260,360）垂直于所述平坦表面原位生长。电子设备（200,300）包括由图案化层（220,320）垂直间隔开的电子电路（280,370,380）的第一和第二区域。图案化层（220,320）的纳米通孔（224,324）在区域之间垂直延伸。第一区域（324,376）具有平坦表面。装置（200,300）还包括从纳米通孔（224,324）中的第一区域（374,376）的平坦表面上的催化剂位置垂直延伸的纳米线（260,360）。纳米线（260,360）形成连接区域的纳米级电路的组件。

4. 发明申请

WO2008018907A3 NANOWIRE HETEROSTRUCTURES, METHODS OF FORMING THE SAME AND THEIR ENHANCED RAMAN ACTIVITY 审中-公开
标题翻译：纳米结构，其形成方法及其增强拉曼动力学
公开(公告)号：WO2008018907A3
公开(公告)日：2008-05-22
申请号：PCT/US2007001990
申请日：2007-01-26
申请人： HEWLETT PACKARD DEVELOPMENT CO , KAMINS THEODORE I , BRATKOVSKI ALEXANDRE M , SHASHANK SHARMA
发明人： KAMINS THEODORE I , BRATKOVSKI ALEXANDRE M , SHASHANK SHARMA
IPC分类号： G01N21/65
CPC分类号： G01N21/658 , B82Y15/00 , B82Y20/00 , G02B6/107
摘要： A NERS-active structure (100, 101, 102, 103) is disclosed that includes at least one heterostructure nanowire (120, 121, 220). The at least one heterostructure nanowire (120, 121, 220) may include alternating segments (140, 150) of an NERS-inactive material and a NERS-active material in an axial direction. Alternatively, the alternating segments (150, 151 ) may be of an NERS-inactive material and a material capable of attracting nanoparticles of a NERS-active material. In yet another alternative, the heterostructure nanowire (220) may include a core (240) with alternating coatings (250, 260) of an NERS- inactive material and a NERS-active material in a radial direction. A NERS system is also disclosed that includes a NERS-active structure (100, 101, 102, 103). Also disclosed are methods for forming a NERS-active structure (100, 101, 102, 103) and methods for performing NERS with NERS-active structures (100, 101, 102, 103).
摘要翻译：公开了包括至少一个异质结构纳米线（120,121,220）的NERS活性结构（100,101,102,103）。所述至少一个异质结构纳米线（120,121,220）可包括NERS非活性材料和轴向上的NERS-活性材料的交替段（140,150）。或者，交替的段（150,151）可以是NERS非活性材料和能够吸引NERS-活性材料的纳米颗粒的材料。在另一个替代方案中，异质结构纳米线（220）可以包括具有NERS-非活性材料的交替涂层（250,260）和径向方向上的NERS-活性材料的芯（240）。还公开了一种NERS系统，其包括NERS-活动结构（100,101,102,103）。还公开了形成NERS-活性结构（100,101,102,103）的方法以及用NERS-活性结构（100,101,102,103）进行NERS的方法。

5. 发明申请

WO2007139862A3 INTEGRATED CIRCUIT INTERCONNECT 审中-公开
标题翻译：集成电路互连
公开(公告)号：WO2007139862A3
公开(公告)日：2008-05-02
申请号：PCT/US2007012347
申请日：2007-05-22
申请人： HEWLETT PACKARD DEVELOPMENT CO , KAMINS THEODORE I , KUEKES PHILIP J
发明人： KAMINS THEODORE I , KUEKES PHILIP J
IPC分类号： H01L27/06 , H01L21/98
CPC分类号： H01L27/0688 , H01L21/8221 , H01L2924/00011 , H01L2924/0002 , H01L2924/00012 , H01L2224/80001
摘要： An embodiment of an integrated circuit comprises active components in more than one active layer. A first conductor (26, 310, 366) in one active layer (22, 304, 360) is operative to produce a static electric field that controls a first active element in an adjacent active layer (30, 320).
摘要翻译：集成电路的实施例包括多于一个有源层中的有源部件。一个有源层（22,304,360）中的第一导体（26,310,366）可操作以产生控制相邻有源层（30,320）中的第一有源元件的静电场。

6. 发明申请

WO2010082923A2 PROGRAMMABLE BIPOLAR ELECTRONIC DEVICE 审中-公开
标题翻译：可编程双极电子器件
公开(公告)号：WO2010082923A2
公开(公告)日：2010-07-22
申请号：PCT/US2009030866
申请日：2009-01-13
申请人： HEWLETT PACKARD DEVELOPMENT CO , KAMINS THEODORE I
发明人： KAMINS THEODORE I
CPC分类号： G11C13/0002 , G11C13/003 , G11C2213/52 , G11C2213/53 , H01L27/101 , H01L27/1026 , H01L45/08 , H01L45/1206 , H01L45/122 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A configurable memristive device (300) for regulating an electrical signal includes a memristive matrix (350) containing a first dopant species; emitter (320), collector (310), and a base electrodes (330, 340) which are in contact with the memristive matrix (350); and a mobile dopant species contained within a central region (360) contiguous with the base electrodes (330, 340), the mobile dopant species moving within the memristive matrix (350) in response to a programming electrical field. A method of configuring and using a memristive device (300) includes: applying a programming electrical field across a memristive matrix (350) such that a mobile dopant species creates a central doped region (360) which bisects the memristive matrix (350); and applying a control voltage to the central doped region (360) to regulate current flow between an emitter electrode (320) and a collector electrode (310).
摘要翻译：用于调节电信号的可配置忆阻装置（300）包括含有第一掺杂剂物质的忆阻矩阵（350）发射极（320），集电极（310）以及与所述忆阻矩阵（350）接触的基极（330,340）; 以及包含在与所述基极（330,340）相邻的中心区域（360）内的移动掺杂剂物质，所述移动掺杂剂物质响应于编程电场在所述忆阻矩阵（350）内移动。一种配置和使用忆阻器件（300）的方法包括：跨越忆阻矩阵（350）施加编程电场，使得移动掺杂物物质形成将所述忆阻矩阵（350）平分的中心掺杂区域（360）; 以及向所述中心掺杂区域（360）施加控制电压以调节发射极电极（320）和集电极电极（310）之间的电流。

7. 发明专利

JP2005091361A Sensor for detecting molecules based on surface photovoltage method 有权
标题翻译：用于基于表面光伏方法检测分子的传感器
公开(公告)号：JP2005091361A
公开(公告)日：2005-04-07
申请号：JP2004266856
申请日：2004-09-14
申请人： Hewlett-Packard Development Co Lp , ヒューレット−パッカードデベロップメントカンパニーエル.ピー.
发明人： NAUKA KRZYSZTOF , LI ZHIYONG , KAMINS THEODORE I
IPC分类号： G01N27/00 , G01N27/12 , H01G9/20 , H01L29/768
CPC分类号： H01G9/2031 , G01N27/002 , Y02E10/542 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a molecule sensor adapted for inexpensive, reliable, and fast sensing of a large variety of chemical and biological species. SOLUTION: The molecule sensor comprises a semiconductor (112) having a sensing surface (114); and a circuit (126) for sensing changes in the surface photovoltage of the semiconductor. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供适于廉价，可靠和快速感测各种化学和生物物种的分子传感器。解决方案：分子传感器包括具有感测表面（114）的半导体（112）; 以及用于感测半导体的表面光电压的变化的电路（126）。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

DE60330488D1 未知
公开(公告)号：DE60330488D1
公开(公告)日：2010-01-21
申请号：DE60330488
申请日：2003-10-10
申请人： HEWLETT PACKARD DEVELOPMENT CO
发明人： KAMINS THEODORE I , KUEKES PHILIP J , CHEN YONG
IPC分类号： D01F9/08 , B81C1/00 , C30B11/00 , C30B11/12 , C30B23/00
摘要： A method of forming an assembly of isolated nanowires of at least one material within a matrix of another material is provided. The method comprises: providing a substrate; forming a catalyst array on a major surface of the substrate; growing an array of the nanowires corresponding with the catalyst array, the nanowires, each comprising at least one material; and forming a matrix of another material that fills in spaces between the nanowires. The method is useful for producing a variety of structures useful in a number of devices, such as photonic bandgap structures and quantum dot structures.

9. 发明专利

AU2003279914A8 A method of forming catalyst nanoparticles for nanowire growth and other applications 未知
公开(公告)号：AU2003279914A8
公开(公告)日：2004-05-25
申请号：AU2003279914
申请日：2003-10-10
申请人： HEWLETT PACKARD DEVELOPMENT CO
发明人： KAMINS THEODORE I , CHEN YONG , KUEKES PHILIP J
IPC分类号： C30B11/00 , C30B11/12 , D01F9/08 , B81C1/00 , C30B23/00 , G01F7/00
摘要： A method of forming an assembly of isolated nanowires of at least one material within a matrix of another material is provided. The method comprises: providing a substrate; forming a catalyst array on a major surface of the substrate; growing an array of the nanowires corresponding with the catalyst array, the nanowires, each comprising at least one material; and forming a matrix of another material that fills in spaces between the nanowires. The method is useful for producing a variety of structures useful in a number of devices, such as photonic bandgap structures and quantum dot structures.

10. 发明专利

DE112008002444T5 Elektrische Kontaktvorrichtung für optische Wellenleiter 未知
公开(公告)号：DE112008002444T5
公开(公告)日：2010-07-15
申请号：DE112008002444
申请日：2008-09-08
申请人： HEWLETT PACKARD DEVELOPMENT CO
发明人： SANTORI CHARLES , STEWART DUNCAN , KUEKES PHILIP J , KAMINS THEODORE I
IPC分类号： G02B6/10

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