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1. 发明申请

WO2010087852A1 DECODERS USING MEMRISTIVE SWITCHES 审中-公开
标题翻译：使用物理开关的解码器
公开(公告)号：WO2010087852A1
公开(公告)日：2010-08-05
申请号：PCT/US2009/032721
申请日：2009-01-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , FIORENTINO, Marco , TONG, William M. , KUEKES, Philip J. , YANG, Jianhua
发明人： FIORENTINO, Marco , TONG, William M. , KUEKES, Philip J. , YANG, Jianhua
IPC分类号： G11C8/10 , H01L29/86 , H01L27/088
CPC分类号： G11C8/10 , G11C13/0007 , G11C13/0023 , G11C2213/32 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A decoding structure employs a main terminal (130), a first memristive switch (112) connected between the main terminal (130) and a first addressable terminal (132), and a second memristive switch (114) connected between the main terminal (130) and a second addressable terminal (134). The second memristive switch (114) is oriented so that a voltage polarity on the main terminal (130) that tends to turn the first memristive switch (112) on tends to turn the second memristive switch (114) off.
摘要翻译：解码结构采用主端子（130），连接在主端子（130）和第一可寻址端子（132）之间的第一忆阻开关（112）和连接在主端子（130）之间的第二忆阻开关（114））和第二可寻址终端（134）。第二忆阻开关（114）的取向使得容易使第一忆阻开关（112）转动的主端子（130）上的电压极性倾向于使第二忆阻开关（114）转动。

2. 发明申请

WO2010050937A1 ELECTRICALLY ACTUATED DEVICE AND METHOD OF CONTROLLING THE FORMATION OF DOPANTS THEREIN 审中-公开
标题翻译：电动启动装置及其控制方法
公开(公告)号：WO2010050937A1
公开(公告)日：2010-05-06
申请号：PCT/US2008/081567
申请日：2008-10-29
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , STEWART, Duncan , KUEKES, Philip, J. , TONG, William, M.
发明人： YANG, Jianhua , STEWART, Duncan , KUEKES, Philip, J. , TONG, William, M.
IPC分类号： H01L21/265 , H01L21/8247
CPC分类号： H01L27/10 , H01L21/2254 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1658 , H01L45/1675
摘要： An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes.
摘要翻译：电驱动装置包括第一电极，第二电极和设置在第一和第二电极之间的有源区。该器件还包括位于i）第一电极和有源区之间的界面处的掺杂剂引发剂或掺杂剂中的至少一种，或ii）第二电极和有源区，或iii）活性区和第一和第二电极。

3. 发明申请

WO2008048597A3 CROSSBAR-MEMORY SYSTEMS WITH NANOWIRE CROSSBAR JUNCTIONS 审中-公开
标题翻译：具有NANOWIRE CROSSBAR JUNCTIONS的交叉记忆体系统
公开(公告)号：WO2008048597A3
公开(公告)日：2008-06-19
申请号：PCT/US2007022070
申请日：2007-10-16
申请人： HEWLETT PACKARD DEVELOPMENT CO , ROBINETT WARREN , KUEKES PHILIP J
发明人： ROBINETT WARREN , KUEKES PHILIP J
IPC分类号： G11C13/02
CPC分类号： G11C13/02 , B82Y10/00 , G06F11/1008 , G06F11/1076 , G11C11/54 , G11C13/0023 , G11C13/004 , G11C13/0069 , G11C2013/0047 , G11C2013/0057 , G11C2013/009 , G11C2213/16 , G11C2213/77 , G11C2213/81
摘要： Various embodiments of the present invention are directed to crossbar-memory systems to methods for writing information to and reading information stored in such systems. In one embodiment of the present invention, a crossbar-memory system (800) comprises a first layer of microscale signal lines (808), a second layer of microscale signal lines '(810), a first layer of nanowires (804) configured so that each first layer, nanowire overlaps each first layer microscale signal line (808), and a second layer of nanowires (806) configured so that each second layer nanowire overlaps each second layer microscale signal line (810) and overlaps each first layer nanowire (804). The crossbar-memory system includes nonlinear-tunneling resistors configured to selectively connect first layer nanowires (804) to first layer microscale signal lines (808) and to selectively connect second layer nanowires (806) to second layer microscale signal lines (810). The crossbar-memory system (800) also includes nonlinear tunneling-hysteretic resistors configured to connect each first layer nanowire to each second layer nanowire. at each crossbar intersection.
摘要翻译：本发明的各种实施例涉及交叉存储器系统，用于将信息写入和读取存储在这样的系统中的信息的方法。在本发明的一个实施例中，交叉开关存储器系统（800）包括第一层微米信号线（808），第二层微米信号线（810），第一层纳米线（804）每个第一层纳米线与每个第一层微米信号线（808）重叠，以及第二纳米线层（806），其被配置为使得每个第二层纳米线与每个第二层微米信号线（810）重叠并与每个第一层纳米线 804）。交叉开关存储器系统包括被配置为选择性地将第一层纳米线（804）连接到第一层微型信号线（808）并且选择性地将第二层纳米线（806）连接到第二层微量信号线（810）的非线性隧道电阻器。交叉开关存储器系统（800）还包括被配置为将每个第一层纳米线连接到每个第二层纳米线的非线性隧道 - 迟滞电阻器。在每个交叉口交叉点。

4. 发明申请

WO2008054400A2 CONTROL LAYER FOR A NANOSCALE ELECTRONIC SWITCHING DEVICE 审中-公开
标题翻译：用于纳米电子开关器件的控制层
公开(公告)号：WO2008054400A2
公开(公告)日：2008-05-08
申请号：PCT/US2006/043687
申请日：2006-11-08
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , STEWART, Duncan , OHLBERG, Douglas, A. , WILLIAMS, Stanley, R. , KUEKES, Philip, J.
发明人： STEWART, Duncan , OHLBERG, Douglas, A. , WILLIAMS, Stanley, R. , KUEKES, Philip, J.
IPC分类号： G11C13/02 , H01L21/768 , H01L51/00
CPC分类号： G11C13/0009 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/146 , H01L51/0591
摘要： A control layer (26, 26', 28, 28', 28") for use in a junction of a nanoscale electronic switching device (10) is disclosed. The control layer (26, 26', 28, 28', 28") includes a material that is chemically compatible with a connecting layer (16) and at least one electrode (12, 14) in the nanoscale switching device (10). The control layer (26, 26', 28, 28', 28") is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device (10).
摘要翻译：公开了一种用于纳米级电子开关装置（10）的接合处的控制层（26,26'，28,28'，28“），控制层（26,26'，28,28'，28” ）包括与纳米级切换装置（10）中的连接层（16）和至少一个电极（12,14）化学相容的材料。控制层（26,26'，28,28'，28“）适于在装置（10）的操作期间控制电化学反应路径，电物理反应路径及其组合中的至少一个。

5. 发明申请

WO2007139862A3 INTEGRATED CIRCUIT INTERCONNECT 审中-公开
标题翻译：集成电路互连
公开(公告)号：WO2007139862A3
公开(公告)日：2008-05-02
申请号：PCT/US2007012347
申请日：2007-05-22
申请人： HEWLETT PACKARD DEVELOPMENT CO , KAMINS THEODORE I , KUEKES PHILIP J
发明人： KAMINS THEODORE I , KUEKES PHILIP J
IPC分类号： H01L27/06 , H01L21/98
CPC分类号： H01L27/0688 , H01L21/8221 , H01L2924/00011 , H01L2924/0002 , H01L2924/00012 , H01L2224/80001
摘要： An embodiment of an integrated circuit comprises active components in more than one active layer. A first conductor (26, 310, 366) in one active layer (22, 304, 360) is operative to produce a static electric field that controls a first active element in an adjacent active layer (30, 320).
摘要翻译：集成电路的实施例包括多于一个有源层中的有源部件。一个有源层（22,304,360）中的第一导体（26,310,366）可操作以产生控制相邻有源层（30,320）中的第一有源元件的静电场。

6. 发明申请

WO2007078317A3 AUTONOMOUS EVANESCENT OPTICAL NANOSENSOR 审中-公开
标题翻译：自主发光的光学纳米传感器
公开(公告)号：WO2007078317A3
公开(公告)日：2007-09-27
申请号：PCT/US2006018158
申请日：2006-05-10
申请人： HEWLETT PACKARD DEVELOPMEMT CO , BEAUSOLEIL RAYMOND G , KUEKES PHILIP J , WILLIAMS R STANLEY
发明人： BEAUSOLEIL RAYMOND G , KUEKES PHILIP J , WILLIAMS R STANLEY
IPC分类号： G01N21/64
CPC分类号： G01N21/7703 , G01N21/648 , G01N21/65 , G01N21/94 , G01N33/569 , G01N35/00871 , G01N2021/7786 , G01N2035/00881
摘要： A sensor (100) includes traps (130) that are adjacent to a waveguide (120) and capable of holding a contaminant for an interaction with an evanescent field surrounding the waveguide (120). When held in a trap (130), a particle of the contaminant, which may be an atom, a molecule, a virus, or a microbe, scatters light from the waveguide (120), and the scattered light can be measured to detect the presence or concentration of the contaminant. Holding of the particles permits sensing of the contaminant in a gas where movement of the particles might otherwise be too fast to permit measurement of the interaction with the evanescent field. The waveguide (120), a lighting system (140), a photosensor (150), and a communications interface (160) can all be fabricated on a semiconductor die (110) to permit fabrication of an autonomous nanosensor capable of suspension in the air or a gas being sensed.
摘要翻译：传感器（100）包括邻近波导（120）并且能够保持污染物用于与波导（120）周围的渐消场相互作用的陷阱（130）。当保持在诱捕器（130）中时，污染物（其可以是原子，分子，病毒或微生物）的粒子散射来自波导（120）的光，并且可以测量散射光以检测污染物的存在或浓度。颗粒的保持允许感测气体中的污染物，否则颗粒的运动可能太快而不能测量与消逝场的相互作用。可以在半导体管芯（110）上制造波导（120），照明系统（140），光电传感器（150）和通信接口（160），以允许制造能够悬浮在空气中的自主纳米传感器或感测到的气体。

7. 发明申请

WO2007053764A2 CROSSBAR-ARRAY DESIGNS AND WIRE ADDRESSING METHODS THAT TOLERATE MISALIGNMENT OF ELECTRICAL COMPONENTS AT WIRE OVERLAP POINTS 审中-公开
标题翻译：跨导线阵列设计和导线寻址方法，可以阻止电线重叠处电气元件的错位
公开(公告)号：WO2007053764A2
公开(公告)日：2007-05-10
申请号：PCT/US2006042923
申请日：2006-11-01
申请人： HEWLETT PACKARD DEVELOPMENT CO , WU WEI , KUEKES PHILIP J , WILLIAMS R STANLEY
发明人： WU WEI , KUEKES PHILIP J , WILLIAMS R STANLEY
IPC分类号： G11C8/10
CPC分类号： G11C13/02 , B82Y10/00 , G11C8/10 , G11C11/54 , G11C13/0023 , G11C2213/77 , G11C2213/81 , H01L27/10 , H01L27/285 , Y10S977/762 , Y10S977/932
摘要： Various embodiments of the present invention are directed to crossbar array designs that interfaces wires to address wires, despite misalignments between electrical components and wires. In one embodiment, a nanoscale device may be composed of a first layer of two or more wires (1501-1511) and a second layer of two or more address wires (1512-1523) that overlays the first layer. The nanoscale device may also include an intermediate layer (704-804) positioned between the first layer and the second layer. Two or more redundant electrical component patterns (1400) may be fabricated within the intermediate layer so that one or more of the electrical component patterns is aligned with the first and second layers.
摘要翻译：尽管电气部件和电线之间未对准，本发明的各种实施例针对交叉开关阵列设计，其将导线连接到地址导线。在一个实施例中，纳米级器件可以由覆盖第一层的两个或更多个导线（1501-1511）的第一层和两个或更多个地址导线（1512-1523）的第二层组成。纳米级装置还可以包括位于第一层和第二层之间的中间层（704-804）。可以在中间层内制造两个或更多冗余电部件图案（1400），使得一个或多个电部件图案与第一和第二层对齐。

8. 发明申请

WO2005038514A3 PHOTONIC INTERCONNECT SYSTEM 审中-公开
标题翻译：光子互连系统
公开(公告)号：WO2005038514A3
公开(公告)日：2005-08-04
申请号：PCT/US2004033117
申请日：2004-10-06
申请人： HEWLETT PACKARD DEVELOPMENT CO , BEAUSOLEIL RAYMOND G , KUEKES PHILIP J , MUNRO WILLIAM J , SPILLER TIMOTHY P , WILLIAMS RICHARD S , BARRETT SEAN
发明人： BEAUSOLEIL RAYMOND G , KUEKES PHILIP J , MUNRO WILLIAM J , SPILLER TIMOTHY P , WILLIAMS RICHARD S , BARRETT SEAN
IPC分类号： G02B6/12 , G02B6/122 , G02B6/34 , G02B6/43 , G02F1/01 , G11C13/04 , H04B10/00
CPC分类号： G02F1/01 , B82Y20/00 , G02B6/12007 , G02B6/1225 , G02B6/43 , G02F2202/32 , G02F2203/585 , H04B10/801
摘要： A photonic interconnect system (300) avoids high capacitance electric interconnects by using optical signals to communicate data between devices. the system can provide massively parallel information output by mapping logical addresses to frequency bands, so that modulation of a selected frequency band can encode information for a specific location corresponding to the logical address. Wavelength-specific directional couplers (600), modulators (660), and detectors (650) for the photonic interconnect system can be efficiently fabricated at defects in a photonic bandgap crystal.
摘要翻译：光子互连系统（300）通过使用光信号在设备之间传送数据来避免高电容电互连。该系统可以通过将逻辑地址映射到频带来提供大规模并行信息输出，使得对选定频带的调制可以对与逻辑地址对应的特定位置的信息进行编码。用于光子互连系统的波长专用定向耦合器（600），调制器（660）和检测器（650）可以在光子带隙晶体中的缺陷处被有效地制造。

9. 发明申请

WO2005006342A2 CONTROLLED INPUT MOLECULAR CROSSBAR LATCH 审中-公开
标题翻译：控制输入分子交叉拉杆
公开(公告)号：WO2005006342A2
公开(公告)日：2005-01-20
申请号：PCT/US2004/002644
申请日：2004-01-27
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , KUEKES, Philip J,
发明人： KUEKES, Philip J,
IPC分类号： G11C13/02
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/02 , G11C2213/77 , G11C2213/81 , Y10S977/94
摘要： A molecular crossbar latch is provided, comprising two control wires and a signal wire that crosses the two control wires to form a junction with each control wire. The latch further includes a control mechanism for controllably electrically connecting and disconnecting signal input to the latch, thus allowing the input to change its logic value after the signal is latched while the signal wire retains its latched value. Each junction forms a switch, the junction having a functional dimension in nanometers. The crossbar latch permits latching a logic value on the signal wire. Further, methods are provided for latching logic values in a logic array, for inventing a logic value , and for restoring a voltage value of a signal in a nano-scale wire.
摘要翻译：提供分子交叉闩锁，其包括两条控制线和穿过两根控制线以与每条控制线形成连接点的信号线。闩锁还包括用于可控地电连接和断开输入到锁存器的信号的控制机构，从而允许输入在信号被锁存之后改变其逻辑值，同时信号线保持其锁存值。每个结形成一个开关，该结具有纳米的功能尺寸。横杆闩锁允许锁定信号线上的逻辑值。此外，提供了用于在逻辑阵列中锁存逻辑值，用于发明逻辑值以及用于恢复纳米级线中的信号的电压值的方法。

10. 发明申请

WO2010120297A1 NANOWIRE SENSOR HAVING A NANOWIRE AND ELECTRICALLY CONDUCTIVE FILM 审中-公开
标题翻译：具有纳米和电导电膜的纳米传感器
公开(公告)号：WO2010120297A1
公开(公告)日：2010-10-21
申请号：PCT/US2009/040686
申请日：2009-04-15
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P , KAMINS, Theodore, I. , KUEKES, Philip, J.
发明人： KAMINS, Theodore, I. , KUEKES, Philip, J.
IPC分类号： G01N27/403 , H01L29/06 , B82B3/00 , G01N27/00
CPC分类号： G01N27/127
摘要： A nanowire sensor includes a first electrode, a second electrode, and a sensing element connecting the first electrode and the second electrode. The sensing element includes at least one nanowire connecting the first electrode and the second electrode and an electrically conductive film covering the at least one nanowire and extending between and contacting the first electrode and the second electrode, wherein conductance of the electrically conductive film is configured to change in the presence of at least one species to enable detection of the at least one species.
摘要翻译：纳米线传感器包括第一电极，第二电极和连接第一电极和第二电极的感测元件。感测元件包括连接第一电极和第二电极的至少一个纳米线和覆盖至少一个纳米线并在第一电极和第二电极之间并且与第一电极和第二电极接触的导电膜，其中导电膜的电导被配置为改变至少一种物质的存在以使得能够检测至少一种物质。

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