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    • 1. 发明申请
    • Microscope and sample observation method
    • 显微镜和样品观察法
    • US20040240051A1
    • 2004-12-02
    • US10804195
    • 2004-03-19
    • HAMAMATSU PHOTONICS K.K.
    • Hirotoshi TeradaIkuo Arata
    • G02B021/00
    • G01N21/1717G01N21/8806G01N21/9501G01N2021/0342G02B21/02G02B21/365
    • For a semiconductor device S as a sample of an observed object, there are provided an image acquisition part 1 for carrying out observation of the semiconductor device S, and an optical system 2 comprising an objective lens 20. A solid immersion lens (SIL) 3 for magnifying an image of the semiconductor device S is arranged movable between an insertion position where the solid immersion lens includes an optical axis from the semiconductor device S to the objective lens 20 and is in close contact with a surface of the semiconductor device S, and a standby position off the optical axis. Then an image containing reflected light from SIL 3 is acquired with the SIL 3 at the insertion position, and the insertion position of SIL 3 is adjusted by SIL driver 30, with reference to the image. This realizes a semiconductor inspection apparatus (microscope) capable of readily performing observation of the sample necessary for an analysis of microstructure of a semiconductor device or the like, and a semiconductor inspection method (sample observation method) therewith.
    • 对于作为观察对象的样本的半导体器件S,设置有用于执行半导体器件S的观察的图像获取部分1和包括物镜20的光学系统2.固体浸没透镜(SIL)3 用于放大半导体器件S的图像的布置可以在固体浸没透镜包括从半导体器件S到物镜20的光轴并且与半导体器件S的表面紧密接触的插入位置之间移动,以及 离开光轴的待机位置。 然后,通过SIL 3在插入位置获取包含来自SIL 3的反射光的图像,并且参考图像,通过SIL驱动器30调整SIL 3的插入位置。 这实现了能够容易地观察对半导体装置等的微结构进行分析所需的样品的半导体检查装置(显微镜)以及半导体检查方法(样本观察方法)。