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1. 发明授权

US06436809B1 Method of manufacturing semiconductor devices, etching compositions for manufacturing semiconductor devices, and semiconductor devices made using this method 失效
标题翻译：制造半导体器件的方法，用于制造半导体器件的蚀刻组合物以及使用该方法制造的半导体器件
公开(公告)号：US06436809B1
公开(公告)日：2002-08-20
申请号：US09645615
申请日：2000-08-25
申请人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
发明人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , C09K13/04 , H01L21/3212 , Y10S438/981
摘要： A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KlO3, H5IO6, KOH, and HNO3, at least one enhancer selected from the group comprising HF, NH4OH, H3PO4, H2SO4, and HCl, and a buffer solution formed by mixing them at certain rates.
摘要翻译：提供一种制造半导体器件的方法，用于形成钨插塞或多晶硅插塞，并使中间绝缘层的阶梯高度最小化。还提供了用于该工艺的蚀刻组合物，与通过该工艺制造的半导体器件一样。制造半导体器件的方法包括以下步骤：在绝缘层上形成具有一定厚度的钨膜，并且在构成特定半导体结构的绝缘层中形成的埋入接触孔，并使用一定的蚀刻组合物旋转蚀刻钨膜钨膜仅存在于不存在于绝缘膜上的接触孔内。蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少一种选自HF，NH 4 OH，H 3 PO 4 ，H 2 SO 4和HCl，以及通过以一定速率混合形成的缓冲溶液。

2. 发明授权

US06232228B1 Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method 失效
标题翻译：制造半导体器件的方法，用于制造半导体器件的蚀刻组合物以及使用该方法制造的半导体器件
公开(公告)号：US06232228B1
公开(公告)日：2001-05-15
申请号：US09325389
申请日：1999-06-04
申请人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
发明人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
IPC分类号： H01L2144
CPC分类号： C09K13/04 , H01L21/3212 , H01L21/7684
摘要： A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer. The etching composition includes at least one oxidant selected from H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KIO3, H5IO6, KOH and HNO3, at least enhancer selected from HF, NH4OH, H3PO4, H2SO4, NH4F and HCl, and a buffer solution, mixed together in certain amounts.
摘要翻译：提供一种制造半导体器件的方法，包括形成导电插塞并使层间绝缘层的阶梯高度最小化。还提供了用于这种制造方法的蚀刻组合物。制造半导体器件的方法包括以下步骤：在半导体衬底上形成绝缘层，在绝缘层中形成接触孔，在绝缘层上形成导电层以埋入接触孔，旋转半导体衬底，并蚀刻导电通过在旋转半导体衬底上提供蚀刻组合物，并且使用蚀刻组合物旋转蚀刻钨层，使得导电层仅保留在接触孔内部，并且不保留在绝缘层上。蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少选自HF，NH 4 OH，H 3 PO 4，H 2 SO 4，NH 4 F和HCl的增强剂，缓冲溶液，以一定量混合在一起。

3. 发明授权

US6140233A Method of manufacturing semiconductor devices, etching compositions for manufacturing semiconductor devices, and semiconductor devices thereby 失效
标题翻译：制造半导体器件的方法，用于制造半导体器件的蚀刻组合物以及半导体器件
公开(公告)号：US6140233A
公开(公告)日：2000-10-31
申请号：US109922
申请日：1998-07-02
申请人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
发明人： Gyu-hwan Kwag , Se-jong Ko , Kyung-seuk Hwang , Jun-ing Gil , Sang-o Park , Dae-hoon Kim , Sang-moon Chon , Ho-Kyoon Chung
IPC分类号： C09K13/04 , H01L21/321 , H01L21/768 , H01L21/44
CPC分类号： H01L21/7684 , C09K13/04 , H01L21/3212 , Y10S438/981
摘要： A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H.sub.2 O.sub.2, O.sub.2, IO.sub.4.sup.-, BrO.sub.3, ClO.sub.3, S.sub.2 O.sub.8.sup.-, KlO.sub.3, H.sub.5 IO.sub.6, KOH, and HNO.sub.3, at least one enhancer selected from the group comprising HF, NH.sub.4 OH, H.sub.3 PO.sub.4, H.sub.2 SO.sub.4, and HCl, and a buffer solution formed by mixing them at certain rates.
摘要翻译：提供一种制造半导体器件的方法，用于形成钨插塞或多晶硅插塞，并使中间绝缘层的阶梯高度最小化。还提供了用于该工艺的蚀刻组合物，与通过该工艺制造的半导体器件一样。制造半导体器件的方法包括以下步骤：在绝缘层上形成具有一定厚度的钨膜，并且在构成特定半导体结构的绝缘层中形成的埋入接触孔，并使用一定的蚀刻组合物旋转蚀刻钨膜钨膜仅存在于不存在于绝缘膜上的接触孔内。蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少一种选自HF，NH 4 OH，H 3 PO 4 ，H 2 SO 4和HCl，以及通过以一定速率混合形成的缓冲溶液。

4. 发明授权

US06232239B1 Method for cleaning contact holes in a semiconductor device 失效
标题翻译：用于清洁半导体器件中的接触孔的方法
公开(公告)号：US06232239B1
公开(公告)日：2001-05-15
申请号：US09141207
申请日：1998-08-26
申请人： Kwang-shin Lim , Eun-a Kim , Sang-o Park , Kyung-seuk Hwang
发明人： Kwang-shin Lim , Eun-a Kim , Sang-o Park , Kyung-seuk Hwang
IPC分类号： H01L21338
CPC分类号： H01L21/76804 , H01L21/02063 , H01L21/31111 , H01L21/76814 , Y10S438/906 , Y10S438/963
摘要： A method for removing impurities and deposits formed in a contact hole of a semiconductor device. The method comprises the step of bathing the semiconductor device in a solution having concentrations of between about 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2 to 4 weight percent of H2O2, 0.05 to 0.25 weight percent of HF, and the remaining percent of deionized water. Such bathing is preferably carried out with the solution maintained at a constant temperature of between about 20 to 25° C. for about 1 to 5 minutes.
摘要翻译：一种去除形成在半导体器件的接触孔中的杂质和沉积物的方法。该方法包括将半导体器件洗涤在浓度为约25至35重量％的异丙醇（IPA），2至4重量％的H 2 O 2，0.05至0.25重量百分比的HF和其余百分比的溶液中的溶液的步骤的去离子水。这种洗浴优选在溶液保持在约20至25℃的恒定温度下进行约1至5分钟。

5. 发明授权

US5782984A Method for cleaning an integrated circuit device using an aqueous cleaning composition 失效
标题翻译：使用水性清洁组合物清洁集成电路装置的方法
公开(公告)号：US5782984A
公开(公告)日：1998-07-21
申请号：US30339
申请日：1998-02-25
申请人： Kwang-shin Lim , Sang-o Park
发明人： Kwang-shin Lim , Sang-o Park
IPC分类号： B08B3/08 , C11D3/39 , C11D7/08 , C11D7/26 , C11D7/60 , C11D11/00 , C23G5/02 , H01L21/304 , H01L21/306 , H05K3/26 , C03C15/00
CPC分类号： H01L21/02052 , C11D11/0047 , C11D3/3947 , C11D7/08 , C11D7/261 , H05K3/26 , Y10S134/902
摘要： A method for cleaning an integrated circuit substrate comprises cleaning the integrated circuit substrate by contacting the integrated circuit substrate with an aqueous cleaning composition. The aqueous cleaning composition comprises from about 0.1 to about 2 percent of hydrogen fluoride based on the volume of the composition, from about 9 to about 15 percent of hydrogen peroxide based on the volume of the composition, and from about 41 to about 47 percent of a C.sub.1 to C.sub.6 alcohol based on the volume of the composition.
摘要翻译：一种用于清洁集成电路衬底的方法包括通过使集成电路衬底与含水清洁组合物接触来清洁集成电路衬底。基于组合物的体积，含水清洗组合物包含约0.1至约2％的氟化氢，基于组合物体积的约9至约15％的过氧化氢和约41％至约47％的过氧化氢基于组合物的体积的C1至C6醇。

6. 发明授权

US6037269A Etching methods of silicon nitride films employed in microelectronic devices 有权
标题翻译：在微电子器件中使用的氮化硅膜的蚀刻方法
公开(公告)号：US6037269A
公开(公告)日：2000-03-14
申请号：US392053
申请日：1999-09-08
申请人： Eun-a Kim , Sang-o Park
发明人： Eun-a Kim , Sang-o Park
IPC分类号： H01L21/306 , H01L21/308 , H01L21/311 , H01L21/00
CPC分类号： H01L21/31111
摘要： Aqueous compositions for etching silicon nitride films present on wafers used in microelectronic devices comprise hydrogen fluoride and phosphate. Methods for etching silicon nitride films present in wafers to be used in microelectronic devices comprise exposing the wafers to the aqueous compositions.
摘要翻译：存在于微电子器件中使用的晶片上的用于蚀刻氮化硅膜的水性组合物包括氟化氢和磷酸盐。存在于用于微电子器件的晶片中的氮化硅膜的蚀刻方法包括将晶片暴露于水性组合物。

7. 发明授权

US5983704A Method of measuring and analyzing contamination particles generated during the manufacture of semiconductor devices 失效
标题翻译：在制造半导体器件期间产生的污染颗粒的测量和分析方法
公开(公告)号：US5983704A
公开(公告)日：1999-11-16
申请号：US7535
申请日：1998-01-15
申请人： Sang-o Park , Jin-sung Kim , Hee-se Kang , Sang-young Moon
发明人： Sang-o Park , Jin-sung Kim , Hee-se Kang , Sang-young Moon
IPC分类号： G01N15/14 , G01N1/02 , G01N15/02 , H01L21/02 , H01L21/66
CPC分类号： G01N15/0255 , H01L22/12
摘要： An apparatus and a method of measuring contamination particles generated during manufacturing of semiconductor devices and an analysis method therefor are described. The apparatus for measuring contamination particles has a regulator for controlling the flow of source gas, a first junction, a first filter, a first air valve, a test component, a second junction, a flow pressure reducer, a third junction, a particle counter, a second pump, a computer system, a third air valve, a flow meter, a second filter, a second air valve, a fourth junction, a third filter, an impactor, and a first pump. It is possible to analyze structures and elements of the contamination particles generated from a gas delivery system (GDS) and from at least one utility component constituting the system. Further, it is possible to set up a reference for controlling the contamination particles generated from the GDS and from at least one of the utility components.
摘要翻译：对半导体装置的制造时产生的污染粒子的测量装置及方法进行了说明。用于测量污染颗粒的装置具有用于控制源气体流动的调节器，第一接合点，第一过滤器，第一空气阀，测试部件，第二接合部，流量减压器，第三接合部，粒子计数器第二泵，计算机系统，第三空气阀，流量计，第二过滤器，第二空气阀，第四结，第三过滤器，冲击器和第一泵。可以分析从气体输送系统（GDS）产生的污染颗粒的结构和元素以及从构成系统的至少一个效用部件。此外，可以设置用于控制从GDS和至少一个公用部件产生的污染颗粒的参考。

8. 发明授权

US5883060A Cleaning compositions for wafers used in semiconductor devices 失效
标题翻译：用于半导体器件中的晶片的清洁组合物
公开(公告)号：US5883060A
公开(公告)日：1999-03-16
申请号：US108890
申请日：1998-07-01
申请人： Kwang-shin Lim , Sang-o Park
发明人： Kwang-shin Lim , Sang-o Park
IPC分类号： B08B3/08 , C11D3/39 , C11D7/08 , C11D7/26 , C11D7/60 , C11D11/00 , C23G5/02 , H01L21/304 , H01L21/306 , H05K3/26 , C11D9/04
CPC分类号： H01L21/02052 , C11D11/0047 , C11D3/3947 , C11D7/08 , C11D7/261 , H05K3/26 , Y10S134/902
摘要： An aqueous cleaning composition comprises from about 0.1 to about 2 percent of hydrogen fluoride based on the volume of the composition, from about 9 to about 15 percent of hydrogen peroxide based on the volume of the composition, and from about 41 to about 47 percent of C.sub.1 to C.sub.6 alcohol based on the volume of the composition. The aqueous cleaning composition may be advantageous in that it offers increased cleaning efficiency and less corrosion in comparison to conventional cleaning solutions.
摘要翻译：基于组合物的体积，含水清洁组合物包含约0.1至约2％的氟化氢，基于组合物体积的约9至约15％的过氧化氢，以及约41至约47％的过氧化氢 C1至C6醇基于组合物的体积。水性清洁组合物的优点在于与常规的清洁溶液相比，其提供了更高的清洁效率和更少的腐蚀。

9. 发明授权

US6071827A Method for manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6071827A
公开(公告)日：2000-06-06
申请号：US136139
申请日：1998-08-18
申请人： Kwang-shin Lim , Eun-a Kim , Sang-o Park
发明人： Kwang-shin Lim , Eun-a Kim , Sang-o Park
IPC分类号： G03F7/42 , H01L21/02 , H01L21/027 , H01L21/304 , H01L21/306 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/02071 , H01L21/02063
摘要： A method for manufacturing semiconductor devices including removing a photoresist and cleaning the substrate after removing the photoresist. The method for manufacturing semiconductor devices comprises removing the photoresist remaining on a semiconductor substrate using a dry etching process. The substrate is subsequently cleaned using a cleaning composition comprising a mixture of 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2.0 to 4.0 weight percent of hydrogen peroxide (H.sub.2 O.sub.2), 0.05 to 0.25 weight percent of hydrofluoric acid (HF), and the remaining weight percent of deionized water.
摘要翻译：一种用于制造半导体器件的方法，包括去除光致抗蚀剂并在除去光致抗蚀剂之后清洁衬底。用于制造半导体器件的方法包括使用干蚀刻工艺去除残留在半导体衬底上的光致抗蚀剂。随后使用包含25至35重量％的异丙醇（IPA），2.0至4.0重量％的过氧化氢（H 2 O 2），0.05至0.25重量％的氢氟酸（HF）的混合物和去离子水的剩余重量百分比。

10. 发明授权

US5880355A Apparatus for measuring contamination particles during the manufacture of semiconductor devices 失效
标题翻译：用于在制造半导体器件期间测量污染颗粒的装置
公开(公告)号：US5880355A
公开(公告)日：1999-03-09
申请号：US655121
申请日：1996-05-28
申请人： Sang-o Park , Jin-sung Kim , Hee-se Kang , Sang-young Moon
发明人： Sang-o Park , Jin-sung Kim , Hee-se Kang , Sang-young Moon
IPC分类号： G01N15/14 , G01N1/02 , G01N15/02 , H01L21/02 , H01L21/66
CPC分类号： G01N15/0255 , H01L22/12
摘要： An apparatus and a method of measuring contamination particles generated during manufacturing of semiconductor devices and an analysis method therefor are described. The apparatus for measuring contamination particles has a regulator for controlling the flow of source gas, a first junction, a first filter, a first air valve, a test component, a second junction, a flow pressure reducer, a third junction, a particle counter, a second pump, a computer system, a third air valve, a flow meter, a second filter, a second air valve, a fourth junction, a third filter, an impactor, and a first pump. It is possible to analyze structures and elements of the contamination particles generated from a gas delivery system (GDS) and from at least one utility component constituting the system. Further, it is possible to set up a reference for controlling the contamination particles generated from the GDS and from at least one of the utility components.
摘要翻译：对半导体装置的制造时产生的污染粒子的测量装置及方法进行了说明。用于测量污染颗粒的装置具有用于控制源气体流动的调节器，第一接合点，第一过滤器，第一空气阀，测试部件，第二接合部，流量减压器，第三接合部，粒子计数器第二泵，计算机系统，第三空气阀，流量计，第二过滤器，第二空气阀，第四结，第三过滤器，冲击器和第一泵。可以分析从气体输送系统（GDS）产生的污染颗粒的结构和元素以及从构成系统的至少一个效用部件。此外，可以设置用于控制从GDS和至少一个公用部件产生的污染颗粒的参考。

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