专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110250759A1 Method to Reduce Charge Buildup During High Aspect Ratio Contact Etch 有权
标题翻译：在高宽比接触蚀刻时减少电荷积累的方法
公开(公告)号：US20110250759A1
公开(公告)日：2011-10-13
申请号：US13164970
申请日：2011-06-21
申请人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
发明人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
IPC分类号： H01L21/3065
CPC分类号： H01L21/76802 , H01L21/31116 , Y10S438/906
摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.
摘要翻译：描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。氧化物层沉积在下面的衬底上。由碳源气体形成等离子体蚀刻气体。掺杂剂混入气体中。掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。蚀刻停止在下面的基底。

2. 发明授权

US07985692B2 Method to reduce charge buildup during high aspect ratio contact etch 有权
标题翻译：在高纵横比接触蚀刻期间减少电荷积累的方法
公开(公告)号：US07985692B2
公开(公告)日：2011-07-26
申请号：US12018254
申请日：2008-01-23
申请人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
发明人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
IPC分类号： H01L21/302
CPC分类号： H01L21/76802 , H01L21/31116 , Y10S438/906
摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.
摘要翻译：描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。氧化物层沉积在下面的衬底上。由碳源气体形成等离子体蚀刻气体。掺杂剂混入气体中。掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。蚀刻停止在下面的基底。

3. 发明申请

US20080128389A1 METHOD TO REDUCE CHARGE BUILDUP DURING HIGH ASPECT RATIO CONTACT ETCH 有权
标题翻译：在高比例接触蚀刻期间减少充电建筑物的方法
公开(公告)号：US20080128389A1
公开(公告)日：2008-06-05
申请号：US12018254
申请日：2008-01-23
申请人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
发明人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
IPC分类号： B44C1/22
CPC分类号： H01L21/76802 , H01L21/31116 , Y10S438/906
摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.
摘要翻译：描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。氧化物层沉积在下面的衬底上。由碳源气体形成等离子体蚀刻气体。掺杂剂混入气体中。掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。蚀刻停止在下面的基底。

4. 发明授权

US08673787B2 Method to reduce charge buildup during high aspect ratio contact etch 有权
标题翻译：在高纵横比接触蚀刻期间减少电荷积累的方法
公开(公告)号：US08673787B2
公开(公告)日：2014-03-18
申请号：US13164970
申请日：2011-06-21
申请人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
发明人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
IPC分类号： H01L21/302
CPC分类号： H01L21/76802 , H01L21/31116 , Y10S438/906
摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.
摘要翻译：描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。氧化物层沉积在下面的衬底上。由碳源气体形成等离子体蚀刻气体。掺杂剂混入气体中。掺杂的等离子体蚀刻气体通过将在蚀刻过程中沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。蚀刻停止在下面的基底。

5. 发明授权

US07344975B2 Method to reduce charge buildup during high aspect ratio contact etch 有权
标题翻译：在高纵横比接触蚀刻期间减少电荷积累的方法
公开(公告)号：US07344975B2
公开(公告)日：2008-03-18
申请号：US11213283
申请日：2005-08-26
申请人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
发明人： Gurtej S. Sandhu , Max F. Hineman , Daniel A. Steckert , Jingyi Bai , Shane J. Trapp , Tony Schrock
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L21/31116 , Y10S438/906
摘要： A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopants are mixed into the gas. The doped plasma etching gas etches a substantially vertical contact hole through the oxide layer by doping carbon chain polymers formed along the sidewalls of the contact holes during the etching process into a conductive state. The conductive state of the carbon chain polymers reduces the charge buildup along sidewalls to prevent twisting of the contact holes by bleeding off the charge and ensuring proper alignment with active area landing regions. The etching stops at the underlying substrate.
摘要翻译：描述了使用硬光致抗蚀剂掩模的高纵横比接触蚀刻氧化物层中的基本上垂直的接触孔的方法。氧化物层沉积在下面的衬底上。由碳源气体形成等离子体蚀刻气体。掺杂剂混入气体中。掺杂的等离子体蚀刻气体通过在蚀刻工艺期间将沿着接触孔的侧壁形成的碳链聚合物掺杂到导电状态来蚀刻通过氧化物层的基本垂直的接触孔。碳链聚合物的导电状态减少了沿着侧壁的电荷累积，以防止通过渗出电荷并确保与有源区着陆区域的适当对准来接合孔的扭曲。蚀刻停止在下面的基底。

6. 发明授权

US07067466B2 Cleaning composition useful in semiconductor integrated circuit fabrication 失效
公开(公告)号：US07067466B2
公开(公告)日：2006-06-27
申请号：US10187139
申请日：2002-07-01
申请人： Donald L. Yates , Max F. Hineman
发明人： Donald L. Yates , Max F. Hineman
IPC分类号： C09K13/00
CPC分类号： C11D7/08 , C11D7/265 , C11D11/0047
摘要： A composition for use in semiconductor processing wherein the composition comprises water, phosphoric acid, and an organic acid; wherein the organic acid is ascorbic acid or is an organic acid having two or more carboxylic acid groups (e.g., citric acid). The water can be present in about 40 wt. % to about 85 wt. % of the composition, the phosphoric acid can be present in about 0.01 wt. % to about 10 wt. % of the composition, and the organic acid can be present in about 10 wt. % to about 60 wt. % of the composition. The composition can be used for cleaning various surfaces, such as, for example, patterned metal layers and vias by exposing the surfaces to the composition.

7. 发明授权

US06521931B2 Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme 有权
标题翻译：采用间隔物容纳方案的自对准磁致结构随机存取存储器（MRAM）结构
公开(公告)号：US06521931B2
公开(公告)日：2003-02-18
申请号：US10040447
申请日：2002-01-09
申请人： Gurtej Sandhu , Roger Lee , Dennis Keller , Trung T. Doan , Max F. Hineman , Ren Earl
发明人： Gurtej Sandhu , Roger Lee , Dennis Keller , Trung T. Doan , Max F. Hineman , Ren Earl
IPC分类号： H01L2976
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , B82Y40/00 , H01F41/308 , H01L43/08 , H01L43/12
摘要： A method of fabricating a MRAM structure and the resulting structure. The MRAM structure of the invention has the pinned layer recessed within a trench with the upper magnetic layer positioned over it. The method of MRAM fabrication utilizes a spacer processing technique, whereby the upper magnetic layer of the MRAM stack structure is formed between the region defined by the spacers, thereby allowing for self-alignment of the upper magnetic layer over the underlying pinned magnetic layer.
摘要翻译：一种制造MRAM结构的方法及其结果。本发明的MRAM结构具有凹陷在沟槽内的钉扎层，上部磁性层位于其上。 MRAM制造的方法利用间隔物处理技术，由此MRAM层叠结构的上磁性层形成在由间隔物限定的区域之间，从而允许上磁性层在下面的被钉扎的磁性层上自对准。

8. 发明授权

US07319071B2 Methods for forming a metallic damascene structure 有权
标题翻译：形成金属镶嵌结构的方法
公开(公告)号：US07319071B2
公开(公告)日：2008-01-15
申请号：US10767764
申请日：2004-01-29
申请人： Max F. Hineman , Stephen W. Russell
发明人： Max F. Hineman , Stephen W. Russell
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/76807 , H01L21/76814 , H01L21/76879
摘要： In damascene process integration, a reducing plasma is applied after the etch stop or barrier layer is opened over a copper layer. Currently known methods for opening barrier layers suffer from the disadvantage that they cause at least some of the underlying copper to oxidize to copper oxide. Because copper oxide is selectively removed by subsequent wet cleaning, voids can form where damaged copper (e.g., copper oxide) is removed, thus compromising the reliability of metal-to-metal contact in vias. The present invention advantageously overcomes this and other disadvantages of the prior art through the use of a hydrogen plasma following the barrier layer opening step, which repairs damaged copper (e.g., reduces copper oxide to copper), thus preventing and/or diminishing defects in metal-to-metal contacts in vias and concomitantly improving the reliability of the same.
摘要翻译：在镶嵌工艺集成中，在蚀刻停止或阻挡层在铜层上打开之后施加还原等离子体。目前已知的用于打开阻挡层的方法的缺点在于它们使至少一些下面的铜氧化成氧化铜。由于随后的湿法清洗有选择地除去了氧化铜，所以可以在损坏的铜（例如氧化铜）被除去的地方形成空隙，从而损害通孔中金属对金属接触的可靠性。本发明有利地通过在阻挡层开启步骤之后使用氢等离子体来克服现有技术的这个和其他缺点，其修复损坏的铜（例如，将铜氧化物还原为铜），从而防止和/或减少金属中的缺陷金属触点，同时提高了其可靠性。

9. 发明授权

US07293526B2 Plasma reaction chamber liner consisting essentially of osmium 失效
标题翻译：基本上由锇组成的等离子体反应室衬里
公开(公告)号：US07293526B2
公开(公告)日：2007-11-13
申请号：US11009282
申请日：2004-12-10
申请人： Max F. Hineman , Li Li
发明人： Max F. Hineman , Li Li
IPC分类号： H01L21/00
CPC分类号： H01J37/32623 , H01J37/32633 , H01L21/31116 , H01L28/65 , Y10S156/916 , Y10S438/909
摘要： The invention encompasses a method of enhancing selectivity of etching silicon dioxide relative to one or more organic substances. A material comprising one or more elements selected from Group VIII of the periodic table is provided within a reaction chamber; and a substrate is provided within the reaction chamber. The substrate has both a silicon-oxide-containing composition and at least one organic substance thereover. The silicon-oxide-containing composition is plasma etched within the reaction chamber. The plasma etching of the silicon-oxide-containing composition has increased selectivity for the silicon oxide of the composition relative to the at least one organic substance than would plasma etching conducted without the material in the chamber. The invention also encompasses a plasma reaction chamber assembly. The assembly comprises at least one interior wall, and at least one liner along the at least one interior wall. The liner comprises one or more of Ru, Fe, Co, Ni, Rh, Pd, Os, W, Ir, Pt and Ti.
摘要翻译：本发明包括提高二氧化硅相对于一种或多种有机物质的选择性的方法。包含选自元素周期表第Ⅷ族中的一种或多种元素的材料设置在反应室内; 并且在反应室内设置基板。该基底具有含氧化硅的组合物和至少一种有机物质。含氧化硅的组合物在反应室内进行等离子体蚀刻。含有氧化硅的组合物的等离子体蚀刻相对于至少一种有机物质的组合物的氧化硅的选择性高于在室内没有材料进行的等离子体蚀刻。本发明还包括等离子体反应室组件。所述组件包括至少一个内壁和沿所述至少一个内壁的至少一个衬套。衬套包括Ru，Fe，Co，Ni，Rh，Pd，Os，W，Ir，Pt和Ti中的一种或多种。

10. 发明授权

US07131391B2 Plasma reaction chamber liner comprising ruthenium 有权
标题翻译：包含钌的等离子体反应室衬里
公开(公告)号：US07131391B2
公开(公告)日：2006-11-07
申请号：US10247971
申请日：2002-09-20
申请人： Max F. Hineman , Li Li
发明人： Max F. Hineman , Li Li
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/32633 , H01L21/31116 , H01L28/65 , Y10S156/916 , Y10S438/909
摘要： The invention encompasses a method of enhancing selectivity of etching silicon dioxide relative to one or more organic substances. A material comprising one or more elements selected from Group VIII of the periodic table is provided within a reaction chamber; and a substrate is provided within the reaction chamber. The substrate has both a silicon-oxide-containing composition and at least one organic substance thereover. The silicon-oxide-containing composition is plasma etched within the reaction chamber. The plasma etching of the silicon-oxide-containing composition has increased selectivity for the silicon oxide of the composition relative to the at least one organic substance than would plasma etching conducted without the material in the chamber. The invention also encompasses a plasma reaction chamber assembly. The assembly comprises at least one interior wall, and at least one liner along the at least one interior wall. The liner comprises one or more of Ru, Fe, Co, Ni, Rh, Pd, Os, W, Ir, Pt and Ti.
摘要翻译：本发明包括提高二氧化硅相对于一种或多种有机物质的选择性的方法。包含选自元素周期表第Ⅷ族中的一种或多种元素的材料设置在反应室内; 并且在反应室内设置基板。该基底具有含氧化硅的组合物和至少一种有机物质。含氧化硅的组合物在反应室内进行等离子体蚀刻。含有氧化硅的组合物的等离子体蚀刻相对于至少一种有机物质的组合物的氧化硅的选择性高于在室内没有材料进行的等离子体蚀刻。本发明还包括等离子体反应室组件。所述组件包括至少一个内壁和沿所述至少一个内壁的至少一个衬套。衬套包括Ru，Fe，Co，Ni，Rh，Pd，Os，W，Ir，Pt和Ti中的一种或多种。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式