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    • 5. 发明授权
    • Capacitance forming method
    • 电容成型法
    • US5734583A
    • 1998-03-31
    • US536326
    • 1995-09-29
    • Guoliang ShouKazunori MotohashiMakoto YamamotoSunao Takatori
    • Guoliang ShouKazunori MotohashiMakoto YamamotoSunao Takatori
    • H01L27/08H01L27/10G06F17/50
    • H01L27/0805H01L27/101
    • A capacitance forming method for forming capacitances corresponding to a plurality of constant numbers within a large scale integrated circuit (LSI) comprises steps of defining a unit capacitance with a predetermined shape, defining an arrangement of a plurality of the unit capacitances of a number necessary for total capacity of capacitances to be formed in two dimension in an area of the LSI, selecting the unit capacitances of a number corresponding to the maximal capacity among capacities of the capacitances to be formed so that the selected unit capacitances are equivalently dispersed over the area, and successively selecting other of the capacitances than the capacitance of the maximal capacity in the order of capacities, and selecting the unit capacitances of a number corresponding to a capacity of each the capacitance selected so that the selected unit capacitances are equivalently dispersed over an area of the rest of the unit capacitances which have not selected yet.
    • 用于在大规模集成电路(LSI)内形成对应于多个常数的电容的电容形成方法包括以预定形状定义单位电容的步骤,限定多个单位电容的排列, 在LSI的区域中形成二维电容的总容量,选择与要形成的电容的容量之间的最大容量相对应的数字的单位电容,使得所选择的单位电容等效地分散在该区域上, 并且依次选择电容量以及容量顺序的最大容量的电容量,并且选择与所选择的每个电容的容量对应的数量的单位电容,使得所选择的单位电容等价地分散在 其余单位电容尚未选择。