专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07345754B1 Fourier filters and wafer inspection systems 有权
标题翻译：傅立叶滤波器和晶圆检查系统
公开(公告)号：US07345754B1
公开(公告)日：2008-03-18
申请号：US11228584
申请日：2005-09-16
申请人： Guoheng Zhao , Mehdi Vaez-Iravani , Andrew V. Hill , Avijit K. Ray-Chaudhuri
发明人： Guoheng Zhao , Mehdi Vaez-Iravani , Andrew V. Hill , Avijit K. Ray-Chaudhuri
IPC分类号： G01N21/00 , G02B27/46
CPC分类号： G01N21/9501 , G01N21/4738 , G01N21/956 , G03F7/7065
摘要： Fourier filters and wafer inspection systems are provided. One embodiment relates to a one-dimensional Fourier filter configured to be included in a bright field inspection system such that the bright field inspection system can be used for broadband dark field inspection of a wafer. The Fourier filter includes an asymmetric illumination aperture configured to be positioned in an illumination path of the inspection system. The Fourier filter also includes an asymmetric imaging aperture complementary to the illumination aperture. The imaging aperture is configured to be positioned in a light collection path of the inspection system such that the imaging aperture blocks light reflected and diffracted from structures on the wafer and allows light scattered from defects on the wafer to pass through the imaging aperture.
摘要翻译：提供傅立叶滤波器和晶片检测系统。一个实施例涉及被配置为包括在明场检查系统中的一维傅立叶滤波器，使得明场检查系统可以用于晶片的宽带暗视场检查。傅里叶滤波器包括被配置为定位在检查系统的照明路径中的非对称照明孔。傅立叶滤波器还包括与照明孔径互补的非对称成像孔。成像孔被配置为定位在检查系统的光采集路径中，使得成像孔口阻挡从晶片上的结构反射和衍射的光，并允许从晶片上的缺陷散射的光通过成像孔。

2. 发明授权

US06316150B1 Low thermal distortion extreme-UV lithography reticle 有权
标题翻译：低热畸变极紫外光刻掩模版
公开(公告)号：US06316150B1
公开(公告)日：2001-11-13
申请号：US09139149
申请日：1998-08-24
申请人： Steven E. Gianoulakis , Avijit K. Ray-Chaudhuri
发明人： Steven E. Gianoulakis , Avijit K. Ray-Chaudhuri
IPC分类号： G03F900
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F7/2004
摘要： Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.
摘要翻译：掩模版或掩模的热变形可以通过发射率工程显着降低，即在掩模版上选择性地放置或省略涂层。如此制造的反射式掩模版表现出增强的热传递，从而降低热变形的水平，并最终提高标线图案转印到晶片上的质量。反射性标线器包括具有限定掩模图案的有源区域和非活性区域的基板，其特征在于具有比有源区域更高的发射率的表面。非活性区域未涂覆有辐射反射材料。

3. 发明授权

US06235434B1 Method for mask repair using defect compensation 有权
标题翻译：使用缺陷补偿进行面膜修复的方法
公开(公告)号：US06235434B1
公开(公告)日：2001-05-22
申请号：US09208622
申请日：1998-12-08
申请人： Donald W. Sweeney , Avijit K. Ray-Chaudhuri
发明人： Donald W. Sweeney , Avijit K. Ray-Chaudhuri
IPC分类号： G03F900
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/72
摘要： A method for repair of amplitude and/or phase defects in lithographic masks. The method involves modifying or altering a portion of the absorber pattern on the surface of the mask blank proximate to the mask defect to compensate for the local disturbance (amplitude or phase) of the optical field due to the defect.
摘要翻译：一种用于修复光刻掩模中的幅度和/或相位缺陷的方法。该方法包括修改或改变掩模板的靠近掩模缺陷的表面上的吸收体图案的一部分，以补偿由于缺陷导致的光场的局部干扰（振幅或相位）。

4. 发明授权

US06441885B2 Low thermal distortion extreme-UV lithography reticle 有权
标题翻译：低热畸变极紫外光刻掩模版
公开(公告)号：US06441885B2
公开(公告)日：2002-08-27
申请号：US09903196
申请日：2001-07-10
申请人： Steven E. Gianoulakis , Avijit K. Ray-Chaudhuri
发明人： Steven E. Gianoulakis , Avijit K. Ray-Chaudhuri
IPC分类号： G03B2742
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F7/2004
摘要： Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.
摘要翻译：掩模版或掩模的热变形可以通过发射率工程显着降低，即在掩模版上选择性地放置或省略涂层。如此制造的反射式掩模版表现出增强的热传递，从而降低热变形的水平，并最终提高标线图案转印到晶片上的质量。反射性标线器包括具有限定掩模图案的有源区域和非活性区域的基板，其特征在于具有比有源区域更高的发射率的表面。非活性区域未涂覆有辐射反射材料。

5. 发明授权

US06395455B2 Low thermal distortion Extreme-UV lithography reticle and method 有权
标题翻译：低热变形极紫外光刻掩模版和方法
公开(公告)号：US06395455B2
公开(公告)日：2002-05-28
申请号：US09903195
申请日：2001-07-10
申请人： Steven E. Gianoulakis , Avijit K. Ray-Chaudhuri
发明人： Steven E. Gianoulakis , Avijit K. Ray-Chaudhuri
IPC分类号： G03C500
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F7/2004
摘要： Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.
摘要翻译：掩模版或掩模的热变形可以通过发射率工程显着降低，即在掩模版上选择性地放置或省略涂层。如此制造的反射式掩模版表现出增强的热传递，从而降低热变形的水平，并最终提高标线图案转印到晶片上的质量。反射性标线器包括具有限定掩模图案的有源区域和非活性区域的基板，其特征在于具有比有源区域更高的发射率的表面。非活性区域未涂覆有辐射反射材料。

6. 发明授权

US06206528B1 Surface figure control for coated optics 有权
标题翻译：涂层光学元件的表面图形控制
公开(公告)号：US06206528B1
公开(公告)日：2001-03-27
申请号：US09164413
申请日：1998-09-30
申请人： Avijit K. Ray-Chaudhuri , Paul A. Spence , Michael P. Kanouff
发明人： Avijit K. Ray-Chaudhuri , Paul A. Spence , Michael P. Kanouff
IPC分类号： G02B7182
CPC分类号： G03F7/70216 , G02B7/182 , G03F7/70825
摘要： A pedestal optical substrate that simultaneously provides high substrate dynamic stiffness, provides low surface figure sensitivity to mechanical mounting hardware inputs, and constrains surface figure changes caused by optical coatings to be primarily spherical in nature. The pedestal optical substrate includes a disk-like optic or substrate section having a top surface that is coated, a disk-like base section that provides location at which the substrate can be mounted, and a connecting cylindrical section between the base and optics or substrate sections. The optic section has an optical section thickness2/optical section diameter ratio of between about 5 to 10 mm, and a thickness variation between front and back surfaces of less than about 10%. The connecting cylindrical section may be attached via three spaced legs or members. However, the pedestal optical substrate can be manufactured from a solid piece of material to form a monolith, thus avoiding joints between the sections, or the disk-like base can be formed separately and connected to the connecting section. By way of example, the pedestal optical substrate may be utilized in the fabrication of optics for an extreme ultraviolet (EUV) lithography imaging system, or in any optical system requiring coated optics and substrates with reduced sensitivity to mechanical mounts.
摘要翻译：同时提供高基板动态刚度的基座光学基板，为机械安装硬件输入提供低的表面图灵敏度，并且将由光学涂层引起的表面图形变化限制为主要是球形的。基座光学基板包括具有被涂覆的顶表面的盘状光学元件或基板部分，提供可安装基板的位置的盘状基部部分和基部与光学元件或基板之间的连接圆柱形部分部分。光学部分的光学部分厚度2 /光学截面直径比在约5至10mm之间，前表面和背面之间的厚度变化小于约10％。连接圆柱形部分可以通过三个间隔开的腿或构件附接。然而，基座光学基板可以由固体材料制成以形成整料，从而避免了两部分之间的接合，或者可以单独地形成盘状基底并连接到连接部分。作为示例，基座光学基板可以用于制造用于极紫外（EUV）光刻成像系统的光学器件，或者可用于需要涂覆的光学器件和对机械安装件的灵敏度降低的基板的任何光学系统中。

7. 发明授权

US06198792B1 Wafer chamber having a gas curtain for extreme-UV lithography 有权
标题翻译：晶圆室具有用于极紫外光刻的气幕
公开(公告)号：US06198792B1
公开(公告)日：2001-03-06
申请号：US09187911
申请日：1998-11-06
申请人： Michael P. Kanouff , Avijit K. Ray-Chaudhuri
发明人： Michael P. Kanouff , Avijit K. Ray-Chaudhuri
IPC分类号： G21K500
CPC分类号： G03F7/70866 , G03F7/70233 , G03F7/70908
摘要： An EUVL device includes a wafer chamber that is separated from the upstream optics by a barrier having an aperture that is permeable to the inert gas. Maintaining an inert gas curtain in the proximity of a wafer positioned in a chamber of an extreme ultraviolet lithography device can effectively prevent contaminants from reaching the optics in an extreme ultraviolet photolithography device even though solid window filters are not employed between the source of reflected radiation, e.g., the camera, and the wafer. The inert gas removes the contaminants by entrainment.
摘要翻译： EUVL装置包括晶片室，其通过具有可对惰性气体透过的孔的屏障与上游光学元件分离。在位于极紫外光刻装置的室中的晶片附近保持惰性气幕可以有效地防止污染物在极紫外光刻装置中到达光学器件，即使在反射辐射源之间没有采用固体滤光器，例如，相机和晶片。惰性气体通过夹带来除去污染物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式