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1. 发明申请

US20110018053A1 MEMORY CELL AND METHODS OF MANUFACTURING THEREOF 审中-公开
标题翻译：存储单元及其制造方法
公开(公告)号：US20110018053A1
公开(公告)日：2011-01-27
申请号：US12746401
申请日：2007-12-07
申请人： Guo Qiang Patrick Lo , Jia Fu , Mingbin Yu , Navab Singh
发明人： Guo Qiang Patrick Lo , Jia Fu , Mingbin Yu , Navab Singh
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/0665 , B82Y10/00 , G11C16/10 , G11C2216/06 , H01L29/0673 , H01L29/40117 , H01L29/42348 , H01L29/66833 , H01L29/775 , H01L29/792
摘要： A memory cell is provided. The memory cell comprises a first wire shaped channel structure; and a charge trapping structure surrounding the perimeter surface of the first wire shaped channel structure, the charge trapping structure comprising two charge trapping partial to structures, wherein each charge trapping partial structure is formed of a different material capable of storing electrical charges. Methods of manufacturing the memory cell are also provided.
摘要翻译：提供存储单元。存储单元包括第一线形通道结构; 以及围绕第一线形沟道结构的周边表面的电荷捕获结构，电荷捕获结构包括两个电荷俘获部分结构，其中每个电荷捕获部分结构由能够存储电荷的不同材料形成。还提供了制造存储单元的方法。

2. 发明申请

US20110180795A1 ELECTRO-OPTIC DEVICE AND A METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电光装置及其制造方法
公开(公告)号：US20110180795A1
公开(公告)日：2011-07-28
申请号：US12672369
申请日：2007-08-08
申请人： Guo-Qiang Patrick Lo , Kee-soon Darryl Wang , Wei-Yip Loh , Mingbin Yu , Junfeng Song
发明人： Guo-Qiang Patrick Lo , Kee-soon Darryl Wang , Wei-Yip Loh , Mingbin Yu , Junfeng Song
IPC分类号： H01L29/04 , H01L33/02
CPC分类号： G02F1/025
摘要： An electro-optic device is disclosed. The electro-optic device includes an insulating layer, a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type, a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type and an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region. The electro-optic active region includes a first semiconducting partial active region being doped with doping atoms of the first conductivity type, a second semiconducting partial active region being doped with doping atoms of the second conductivity type and an insulating structure between the first semiconducting partial active region and the second semiconducting partial active region, wherein the insulating structure extends perpendicular to the surface of the insulating layer such that there is no overlap of the first semiconducting partial active region and the second semiconducting partial active region in the direction perpendicular to the surface of the insulating layer. A method for manufacturing an electro-optic device is also disclosed.
摘要翻译：公开了一种电光装置。电光器件包括绝缘层，第一半导体区域，设置在绝缘层之上并掺杂有第一导电类型的掺杂原子，第二半导体区域设置在绝缘层上方并掺杂有第二导电性的掺杂原子以及设置在所述绝缘层之上以及所述第一半导电区域和所述第二半导体区域之间的电光有源区域。电光有源区包括掺杂有第一导电类型的掺杂原子的第一半导体部分有源区，掺杂有第二导电类型的掺杂原子的第二半导体部分有源区和第一半导体部分有源区之间的绝缘结构区域和第二半导体部分有源区，其中绝缘结构垂直于绝缘层的表面延伸，使得在垂直于表面的方向上不存在第一半导体部分有源区和第二半导体部分有源区的重叠绝缘层。还公开了一种用于制造电光装置的方法。

3. 发明授权

US09134553B2 Optical modulator and method for manufacturing the same 有权
标题翻译：光调制器及其制造方法
公开(公告)号：US09134553B2
公开(公告)日：2015-09-15
申请号：US13634364
申请日：2011-03-10
申请人： Eu-Jin Andy Lim , Kah Wee Ang , Qing Fang , Tsung-Yang Jason Liow , Mingbin Yu , Guo Qiang Patrick Lo
发明人： Eu-Jin Andy Lim , Kah Wee Ang , Qing Fang , Tsung-Yang Jason Liow , Mingbin Yu , Guo Qiang Patrick Lo
IPC分类号： G02F1/035 , G02F1/03 , G02F1/025 , G02F1/015
CPC分类号： G02F1/025 , G02F2001/0157 , G02F2201/063
摘要： An optical modulator and a method for manufacturing an optical modulator are provided. The optical modulator includes a first waveguide, a second waveguide, a modulating portion connected between the first waveguide and the second waveguide, the modulating portion being configured to receive an input signal from the first waveguide, to modulate the input signal and to supply a corresponding modulated input signal as an output signal to the second waveguide, wherein the modulating portion includes a semiconductor substrate, one end thereof being coupled to the first waveguide, and a corresponding opposite end thereof being coupled to the second waveguide, a Germanium rib provided on the substrate such that the input signal propagates through the Germanium rib along a longitudinal axis thereof, and a first electrode and a second electrode respectively provided on the substrate, wherein the Germanium rib is provided between the first electrode and the second electrode, and wherein the first electrode and the second electrode are configured to apply an electrical field to the Germanium rib in order to modulate the input signal propagating through the Germanium rib.
摘要翻译：提供一种光学调制器及其制造方法。光调制器包括第一波导，第二波导，连接在第一波导和第二波导之间的调制部分，调制部分被配置为接收来自第一波导的输入信号，以调制输入信号并提供对应的调制输入信号作为到第二波导的输出信号，其中调制部分包括半导体衬底，其一端耦合到第一波导，并且其对应的相对端耦合到第二波导，设置在第二波导上的锗肋基板，使得输入信号沿其纵向轴线传播通过锗肋，以及分别设置在基板上的第一电极和第二电极，其中，所述锗肋设置在第一电极和第二电极之间，并且其中第一电极和第二电极被配置为向第一电极施加电场 e锗肋，以调制通过锗肋传播的输入信号。

4. 发明申请

US20110147870A1 PHOTODETECTOR WITH VALENCE-MENDING ADSORBATE REGION AND A METHOD OF FABRICATION THEREOF 审中-公开
标题翻译：带有修补剂的光电转换器及其制造方法
公开(公告)号：US20110147870A1
公开(公告)日：2011-06-23
申请号：US12867659
申请日：2008-05-30
申请人： Kah Wee Ang , Guo-Qiang Patrick Lo , Mingbin Yu
发明人： Kah Wee Ang , Guo-Qiang Patrick Lo , Mingbin Yu
IPC分类号： H01L31/0232 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/1085 , H01L21/84 , H01L27/1203 , H01L31/022408
摘要： According to an embodiment, a photodetector is provided, including a detector region, a first contact region forming an interface with the detector region, and a first valence mending adsorbate region between the first contact region and the detector region.
摘要翻译：根据实施例，提供了一种光检测器，其包括检测器区域，与检测器区域形成界面的第一接触区域和在第一接触区域和检测器区域之间的第一价态修补吸附物区域。

5. 发明授权

US09046494B2 Optical sensing system and a method of determining a change in an effective refractive index of a resonator of an optical sensing system 有权
$Optical sensing system and a method of determining a change in an effective refractive index of a resonator of an optical sensing system$
标题翻译：光学感测系统和确定光学感测系统的谐振器的有效折射率变化的方法
公开(公告)号：US09046494B2
公开(公告)日：2015-06-02
申请号：US13338693
申请日：2011-12-28
申请人： Junfeng Song , Xianshu Luo , Qing Fang , Mingbin Yu , Guo Qiang Patrick Lo
发明人： Junfeng Song , Xianshu Luo , Qing Fang , Mingbin Yu , Guo Qiang Patrick Lo
IPC分类号： G01N21/41 , H01S3/10 , G01N21/77 , G02B6/293 , H01S5/14 , H01S5/026 , G01N21/45
CPC分类号： G01N21/7746 , G01N21/41 , G01N2021/458 , G02B6/29341 , H01S5/026 , H01S5/141
摘要： According to embodiments of the present invention, an optical sensing system is provided. The optical sensing system includes a resonator arrangement including a first resonator, wherein an effective refractive index of the first resonator is changeable in response to a change in a refractive index of a cladding of the first resonator, and a second resonator to which a current or voltage being adjustable in response to a change in the effective refractive index of the first resonator is applied, wherein the optical sensing system is configured to determine the change in the effective refractive index of the first resonator based on a change in the current or voltage applied to the second resonator. Further embodiments provide a method of determining a change in an effective refractive index of a resonator of an optical sensing system.
摘要翻译：根据本发明的实施例，提供了一种光学感测系统。光学传感系统包括谐振器装置，其包括第一谐振器，其中响应于第一谐振器的包层的折射率的变化，第一谐振器的有效折射率是可变的，以及第二谐振器，应用响应于第一谐振器的有效折射率的变化而调节的电压，其中光学感测系统被配置为基于施加的电流或电压的变化来确定第一谐振器的有效折射率的变化到第二谐振器。另外的实施例提供了一种确定光学感测系统的谐振器的有效折射率的变化的方法。

6. 发明授权

US08362494B2 Electro-optic device with novel insulating structure and a method for manufacturing the same 有权
标题翻译：具有新颖绝缘结构的电光装置及其制造方法
公开(公告)号：US08362494B2
公开(公告)日：2013-01-29
申请号：US12672369
申请日：2007-08-08
申请人： Guo-Qiang Patrick Lo , Kee-Soon Darryl Wang , Wei-Yip Loh , Mingbin Yu , Junfeng Song
发明人： Guo-Qiang Patrick Lo , Kee-Soon Darryl Wang , Wei-Yip Loh , Mingbin Yu , Junfeng Song
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/732 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/00 , H01L29/06
CPC分类号： G02F1/025
摘要： An electro-optic device is disclosed. The electro-optic device includes an insulating layer, a first semiconducting region disposed above the insulating layer and being doped with doping atoms of a first conductivity type, a second semiconducting region disposed above the insulating layer and being doped with doping atoms of a second conductivity type and an electro-optic active region disposed above the insulating layer and between the first semiconducting region and the second semiconducting region. The electro-optic active region includes a first partial active region and a second partial active region and an insulating structure in between. The insulating structure extends perpendicular to the surface of the insulating layer such that there is no overlap of the first partial active region and the second partial active region in the direction perpendicular to the surface of the insulating layer. A method for manufacturing is also disclosed.
摘要翻译：公开了一种电光装置。电光器件包括绝缘层，第一半导体区域，设置在绝缘层上方并掺杂有第一导电类型的掺杂原子，第二半导体区域设置在绝缘层上方并掺杂有第二导电性的掺杂原子以及设置在所述绝缘层之上以及所述第一半导电区域和所述第二半导体区域之间的电光有源区域。电光有源区域包括第一部分有源区域和第二部分有源区域及其间的绝缘结构。绝缘结构垂直于绝缘层的表面延伸，使得在垂直于绝缘层的表面的方向上不存在第一部分有源区和第二部分有源区的重叠。还公开了一种制造方法。

7. 发明授权

US08319302B2 Wafer arrangement and a method for manufacturing the wafer arrangement 有权
标题翻译：晶片布置和晶片布置的制造方法
公开(公告)号：US08319302B2
公开(公告)日：2012-11-27
申请号：US12665876
申请日：2007-08-08
申请人： Qingxin Zhang , Guo-Qiang Patrick Lo , Mingbin Yu , Dim-Lee Kwong
发明人： Qingxin Zhang , Guo-Qiang Patrick Lo , Mingbin Yu , Dim-Lee Kwong
IPC分类号： H01L31/02
CPC分类号： B81C3/002 , B81C2203/051
摘要： The wafer arrangement (100) provided comprises a first wafer (101), which comprises an integrated circuit and a recess (105). The wafer arrangement further comprises a portion of a second wafer (103), which comprises a carrier portion and a protrusion (107), the protrusion comprising an active component or actively controlled component (109) such as a MEMS component, wherein the portion of the second wafer (103) is coupled to the first wafer (101) such that the protrusion (107) is received in the recess (105). The invention provides a mechanism for accurately aligning an active component (109) on the second wafer (103) with components on the first wafer (101), such as photonic, electronic or optical components.
摘要翻译：提供的晶片布置（100）包括第一晶片（101），其包括集成电路和凹部（105）。晶片装置还包括第二晶片（103）的一部分，其包括载体部分和突起（107），所述突起包括有源部件或诸如MEMS部件的主动控制部件（109），其中，部分第二晶片（103）被耦合到第一晶片（101），使得突起（107）被容纳在凹部（105）中。本发明提供了一种用于将第二晶片（103）上的有源元件（109）与第一晶片（101）上的元件（例如光子，电子或光学元件）精确对准的机构。

8. 发明申请

US20120043527A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20120043527A1
公开(公告)日：2012-02-23
申请号：US12859587
申请日：2010-08-19
申请人： Liang Ding , Mingbin Yu , Guo Qiang Patrick Lo
发明人： Liang Ding , Mingbin Yu , Guo Qiang Patrick Lo
IPC分类号： H01L33/06 , H01L21/04
CPC分类号： H01L29/122 , B82Y10/00 , H01L33/06 , H01L33/34
摘要： According to embodiments of the present invention, a light emitting device is provided. The light emitting device includes: an active region comprising at least one p-i-n junction, the at least one p-i-n junction comprising a p-doped region, an intrinsic region and an n-doped region; a first contact; and a second contact, wherein the active region is disposed between the first contact and the second contact; and wherein a voltage applied to the first contact and the second contact produces a current configured to flow between the first contact and the second contact in a direction substantially parallel to a surface of the intrinsic region of the active region configured to emit a light. According to embodiments of the present invention, the intrinsic region includes a multiple quantum well (MQW) such that a current injected flows laterally in a direction substantially parallel to the surface of the wells of the MQW.
摘要翻译：根据本发明的实施例，提供一种发光器件。发光器件包括：有源区，包括至少一个p-i-n结，所述至少一个p-i-n结包括p掺杂区，本征区和n掺杂区; 第一次接触和第二触点，其中所述有源区域设置在所述第一触点和所述第二触点之间; 并且其中施加到所述第一触点和所述第二触点的电压产生电流，所述电流被配置为在基本上平行于被配置为发射光的所述有源区的所述本征区域的表面的方向上在所述第一触点和所述第二触点之间流动。根据本发明的实施例，本征区域包括多量子阱（MQW），使得注入的电流在基本上平行于MQW的阱的表面的方向上横向流动。

9. 发明申请

US20120194803A1 Optical Sensing System And A Method Of Determining A Change In An Effective Refractive Index Of A Resonator Of An Optical Sensing System 有权
$Optical Sensing System And A Method Of Determining A Change In An Effective Refractive Index Of A Resonator Of An Optical Sensing System$
标题翻译：光学传感系统及确定光学感应系统谐振器有效折射率变化的方法
公开(公告)号：US20120194803A1
公开(公告)日：2012-08-02
申请号：US13338693
申请日：2011-12-28
申请人： Junfeng SONG , Xianshu Luo , Qing Fang , Mingbin Yu , Guo Qiang Patrick Lo
发明人： Junfeng SONG , Xianshu Luo , Qing Fang , Mingbin Yu , Guo Qiang Patrick Lo
IPC分类号： G01N21/41
CPC分类号： G01N21/7746 , G01N21/41 , G01N2021/458 , G02B6/29341 , H01S5/026 , H01S5/141
摘要： According to embodiments of the present invention, an optical sensing system is provided. The optical sensing system includes a resonator arrangement including a first resonator, wherein an effective refractive index of the first resonator is changeable in response to a change in a refractive index of a cladding of the first resonator, and a second resonator to which a current or voltage being adjustable in response to a change in the effective refractive index of the first resonator is applied, wherein the optical sensing system is configured to determine the change in the effective refractive index of the first resonator based on a change in the current or voltage applied to the second resonator. Further embodiments provide a method of determining a change in an effective refractive index of a resonator of an optical sensing system.
摘要翻译：根据本发明的实施例，提供了一种光学感测系统。光学传感系统包括谐振器装置，其包括第一谐振器，其中响应于第一谐振器的包层的折射率的变化，第一谐振器的有效折射率是可变的，以及第二谐振器，应用响应于第一谐振器的有效折射率的变化而调节的电压，其中光学感测系统被配置为基于施加的电流或电压的变化来确定第一谐振器的有效折射率的变化到第二谐振器。另外的实施例提供了一种确定光学感测系统的谐振器的有效折射率的变化的方法。

10. 发明申请

US20100219496A1 WAFER ARRANGEMENT AND A METHOD FOR MANUFACTURING THE WAFER ARRANGEMENT 有权
标题翻译： WAFER安排和制造WAFER安排的方法
公开(公告)号：US20100219496A1
公开(公告)日：2010-09-02
申请号：US12665876
申请日：2007-08-08
申请人： Qingxin Zhang , Guo-Qiang Patrick Lo , Mingbin Yu , Dim-Lee Kwong
发明人： Qingxin Zhang , Guo-Qiang Patrick Lo , Mingbin Yu , Dim-Lee Kwong
IPC分类号： H01L31/02
CPC分类号： B81C3/002 , B81C2203/051
摘要： The wafer arrangement (100) provided comprises a first wafer (101), which comprises an integrated circuit and a recess (105). The wafer arrangement further comprises a portion of a second wafer (103), which comprises a carrier portion and a protrusion (107), the protrusion comprising an active component or actively controlled component (109) such as a MEMS component, wherein the portion of the second wafer (103) is coupled to the first wafer (101) such that the protrusion (107) is received in the recess (105). The invention provides a mechanism for accurately aligning an active component (109) on the second wafer (103) with components on the first wafer (101), such as photonic, electronic or optical components.
摘要翻译：提供的晶片装置（100）包括第一晶片（101），其包括集成电路和凹部（105）。晶片装置还包括第二晶片（103）的一部分，其包括载体部分和突起（107），所述突起包括有源部件或诸如MEMS部件的主动控制部件（109），其中，部分第二晶片（103）被耦合到第一晶片（101），使得突起（107）被容纳在凹部（105）中。本发明提供了一种用于将第二晶片（103）上的有源元件（109）与第一晶片（101）上的元件（例如光子，电子或光学元件）精确对准的机构。

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