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1. 发明授权

US09134553B2 Optical modulator and method for manufacturing the same 有权
标题翻译：光调制器及其制造方法
公开(公告)号：US09134553B2
公开(公告)日：2015-09-15
申请号：US13634364
申请日：2011-03-10
申请人： Eu-Jin Andy Lim , Kah Wee Ang , Qing Fang , Tsung-Yang Jason Liow , Mingbin Yu , Guo Qiang Patrick Lo
发明人： Eu-Jin Andy Lim , Kah Wee Ang , Qing Fang , Tsung-Yang Jason Liow , Mingbin Yu , Guo Qiang Patrick Lo
IPC分类号： G02F1/035 , G02F1/03 , G02F1/025 , G02F1/015
CPC分类号： G02F1/025 , G02F2001/0157 , G02F2201/063
摘要： An optical modulator and a method for manufacturing an optical modulator are provided. The optical modulator includes a first waveguide, a second waveguide, a modulating portion connected between the first waveguide and the second waveguide, the modulating portion being configured to receive an input signal from the first waveguide, to modulate the input signal and to supply a corresponding modulated input signal as an output signal to the second waveguide, wherein the modulating portion includes a semiconductor substrate, one end thereof being coupled to the first waveguide, and a corresponding opposite end thereof being coupled to the second waveguide, a Germanium rib provided on the substrate such that the input signal propagates through the Germanium rib along a longitudinal axis thereof, and a first electrode and a second electrode respectively provided on the substrate, wherein the Germanium rib is provided between the first electrode and the second electrode, and wherein the first electrode and the second electrode are configured to apply an electrical field to the Germanium rib in order to modulate the input signal propagating through the Germanium rib.
摘要翻译：提供一种光学调制器及其制造方法。光调制器包括第一波导，第二波导，连接在第一波导和第二波导之间的调制部分，调制部分被配置为接收来自第一波导的输入信号，以调制输入信号并提供对应的调制输入信号作为到第二波导的输出信号，其中调制部分包括半导体衬底，其一端耦合到第一波导，并且其对应的相对端耦合到第二波导，设置在第二波导上的锗肋基板，使得输入信号沿其纵向轴线传播通过锗肋，以及分别设置在基板上的第一电极和第二电极，其中，所述锗肋设置在第一电极和第二电极之间，并且其中第一电极和第二电极被配置为向第一电极施加电场 e锗肋，以调制通过锗肋传播的输入信号。

2. 发明申请

US20110147870A1 PHOTODETECTOR WITH VALENCE-MENDING ADSORBATE REGION AND A METHOD OF FABRICATION THEREOF 审中-公开
标题翻译：带有修补剂的光电转换器及其制造方法
公开(公告)号：US20110147870A1
公开(公告)日：2011-06-23
申请号：US12867659
申请日：2008-05-30
申请人： Kah Wee Ang , Guo-Qiang Patrick Lo , Mingbin Yu
发明人： Kah Wee Ang , Guo-Qiang Patrick Lo , Mingbin Yu
IPC分类号： H01L31/0232 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/1085 , H01L21/84 , H01L27/1203 , H01L31/022408
摘要： According to an embodiment, a photodetector is provided, including a detector region, a first contact region forming an interface with the detector region, and a first valence mending adsorbate region between the first contact region and the detector region.
摘要翻译：根据实施例，提供了一种光检测器，其包括检测器区域，与检测器区域形成界面的第一接触区域和在第一接触区域和检测器区域之间的第一价态修补吸附物区域。

3. 发明申请

US20130071058A1 Optical Modulator and Method for Manufacturing the Same 有权
标题翻译：光学调制器及其制造方法
公开(公告)号：US20130071058A1
公开(公告)日：2013-03-21
申请号：US13634364
申请日：2011-03-10
申请人： Eu-Jin Andy Lim , Kah Wee Ang , Qing Fang , Tsung-Yang Jason Liow , Mingbin Yu , Guo Qiang Patrick Lo
发明人： Eu-Jin Andy Lim , Kah Wee Ang , Qing Fang , Tsung-Yang Jason Liow , Mingbin Yu , Guo Qiang Patrick Lo
IPC分类号： G02F1/025 , H01L33/58
CPC分类号： G02F1/025 , G02F2001/0157 , G02F2201/063
摘要： An optical modulator and a method for manufacturing an optical modulator are provided. The optical modulator includes a first waveguide, a second waveguide, a modulating portion connected between the first waveguide and the second waveguide, the modulating portion being configured to receive an input signal from the first waveguide, to modulate the input signal and to supply a corresponding modulated input signal as an output signal to the second waveguide, wherein the modulating portion includes a semiconductor substrate, one end thereof being coupled to the first waveguide, and a corresponding opposite end thereof being coupled to the second waveguide, a Germanium rib provided on the substrate such that the input signal propagates through the Germanium rib along a longitudinal axis thereof, and a first electrode and a second electrode respectively provided on the substrate, wherein the Germanium rib is provided between the first electrode and the second electrode, and wherein the first electrode and the second electrode are configured to apply an electrical field to the Germanium rib in order to modulate the input signal propagating through the Germanium rib.
摘要翻译：提供一种光学调制器及其制造方法。光调制器包括第一波导，第二波导，连接在第一波导和第二波导之间的调制部分，调制部分被配置为接收来自第一波导的输入信号，以调制输入信号并提供对应的调制输入信号作为到第二波导的输出信号，其中调制部分包括半导体衬底，其一端耦合到第一波导，并且其对应的相对端耦合到第二波导，设置在第二波导上的锗肋基板，使得输入信号沿其纵向轴线传播通过锗肋，以及分别设置在基板上的第一电极和第二电极，其中，所述锗肋设置在第一电极和第二电极之间，并且其中第一电极和第二电极被配置为向第一电极施加电场 e锗肋，以调制通过锗肋传播的输入信号。

4. 发明授权

US08802484B1 Integration of germanium photo detector in CMOS processing 有权
标题翻译：锗光电检测器在CMOS处理中的集成
公开(公告)号：US08802484B1
公开(公告)日：2014-08-12
申请号：US13747009
申请日：2013-01-22
申请人： Purakh Raj Verma , Guowei Zhang , Kah Wee Ang
发明人： Purakh Raj Verma , Guowei Zhang , Kah Wee Ang
IPC分类号： H01L21/00 , H01L31/102
CPC分类号： H01L21/02532 , H01L21/84 , H01L27/0617 , H01L27/1203 , H01L31/028
摘要： A method and device are provided for forming an integrated Ge or Ge/Si photo detector in the CMOS process by non-selective epitaxial growth of the Ge or Ge/Si. Embodiments include forming an N-well in a Si substrate; forming a transistor or resistor in the Si substrate; forming an ILD over the Si substrate and the transistor or resistor; forming a Si-based dielectric layer on the ILD; forming a poly-Si or a-Si layer on the Si-based dielectric layer; forming a trench in the poly-Si or a-Si layer, the Si-based dielectric layer, the ILD, and the N-well; forming Ge or Ge/Si in the trench; and removing the Ge or Ge/Si, the poly-Si or a-Si layer, and the Si-based dielectric layer down to an upper surface of the ILD. Further aspects include forming an in-situ doped Si cap epilayer or an ex-situ doped poly-Si or a-Si cap layer on the Ge or Ge/Si.
摘要翻译：提供了一种通过Ge或Ge / Si的非选择性外延生长在CMOS工艺中形成集成的Ge或Ge / Si光电检测器的方法和装置。实施例包括在Si衬底中形成N阱; 在Si衬底中形成晶体管或电阻器; 在Si衬底和晶体管或电阻器上形成ILD; 在ILD上形成Si基电介质层; 在所述Si基电介质层上形成多晶硅或Si-Si层; 在多晶硅或a-Si层中形成沟槽，Si基介电层，ILD和N阱; 在沟槽中形成Ge或Ge / Si; 并且将Ge或Ge / Si，多晶硅或a-Si层以及Si基介电层除去到ILD的上表面。另外的方面包括在Ge或Ge / Si上形成原位掺杂的Si帽外延层或非原位掺杂的多晶Si或者a-Si覆盖层。

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