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    • 2. 发明授权
    • Method of growing homogeneous crystals
    • 均匀晶体生长方法
    • US4946545A
    • 1990-08-07
    • US238580
    • 1988-08-31
    • Gunter EngelAlfred EnkoPeter W. KremplUwe Posch
    • Gunter EngelAlfred EnkoPeter W. KremplUwe Posch
    • C30B7/10C01B25/37C30B7/00
    • C30B7/00C30B29/10C30B29/14Y10T117/1096
    • In order to prevent crystal seeds with retrograde solubility from dissolving in the hydrothermal growing solution at the beginning of the growing process, and to protect the finished crystal at the end of the growing process, and in order to reach the thermodynamic growth equilibrium as soon as possible, the proposal is put forward that the growing solution be prepared, pre-saturated and pre-heated to a temperature close to saturation temperature outside of the growing tank, and that, for the growing process proper, the hot growing solution be added to the pre-heated growing tank provided with crystal seeds, where it should be further heated to a temperature at which the crystals start growing, and, further, that the hot growing solution be quickly removed from the growing tank as soon as the growing process has been completed.
    • 为了在生长过程开始时防止具有逆向溶解度的晶体种子溶解在水热生长溶液中,并且在生长过程结束时保护成品晶体,并且为了达到热力学生长平衡 可能的是,提出了将生长的溶液制备,预饱和并预加热至生长罐外部接近饱和温度的温度,并且对于生长过程适当,将热生长溶液加入 预加热的生长槽具有晶种,其中应进一步将其加热至晶体开始生长的温度,此外,一旦生长过程具有热生长溶液即可快速从生长槽中移出 已经完成
    • 4. 发明授权
    • Transducer with a flexible piezoelectric layer as a sensor element
    • 具有柔性压电层的传感器作为传感器元件
    • US4737676A
    • 1988-04-12
    • US942783
    • 1986-12-17
    • Gunter EngelPeter W. KremplKlaus-Christoph HarmsHelmut List
    • Gunter EngelPeter W. KremplKlaus-Christoph HarmsHelmut List
    • H01L41/08G01L1/16G01L9/08H01L41/113
    • H01L41/1132
    • A transducer comprising a flexible piezoelectric layer as a sensor element for measuring mechanical quantities in hollow bodies, above all pressures in pipes, the opposite sides of this layer being bonded to electrically-conductive contact layers and being connectable via leads to a display and evaluation unit. In order to achieve a high temperature stability in such transducers and to make them suitable for use at temperatures exceeding 80.degree. C., the piezoelectric layer is proposed to consist of wurtzite or sphalerite. One of the electrically-conductive contact layers can be of some heat-resistant, flexible supporting material, for instance flexible metal foil, such as Cu-Be foil, or a sheet of plastic, one or both of whose sides are metallized, and the other electrically-conductive contact layer can be a metal coating applied by evaporation.
    • 一种传感器,包括柔性压电层作为用于测量中空体中的机械量的传感器元件,高于管道中的所有压力,该层的相对侧被粘合到导电接触层并且可通过导线连接到显示器和评估单元 。 为了在这种换能器中实现高温稳定性并使其适合于在超过80℃的温度下使用,压电层被提出由纤锌矿或闪锌矿组成。 导电接触层中的一个可以是一些耐热柔性的支撑材料,例如柔性金属箔,例如Cu-Be箔,或一块塑料,其一面或两面被金属化,以及 其它导电接触层可以是通过蒸发施加的金属涂层。
    • 5. 发明授权
    • Piezoelectric measuring element
    • 压电测量元件
    • US4902926A
    • 1990-02-20
    • US269594
    • 1988-11-10
    • Gunter EngelPeter W. KremplHelmut List
    • Gunter EngelPeter W. KremplHelmut List
    • H01L41/113H01L41/18
    • H01L41/1132H01L41/18
    • In piecoelectric measuring elements comprising two or more crystal elements that are jointly subject to the mechanical variable to be measured and are provided with electrically conductive electrodes on opposite surfaces located essentially normal to the electric (x) axes of these crystal elements, disadvantages arising from shearing stresses can be prevented by using crystal elements (2) from crystals of point group 32, in which exist two opposite types of enantiomorphism, l and r, in which part of the crystal elements used belong to one of the two enantiomorphic types l or r, and have one of the two absolute orientations of the x-axis, .alpha..sub.1 or .alpha..sub.2, while the remaining crystal elements belong to the opposite enantiomorphic type and have the opposite orientation of the x-axis.
    • 在包含两个或更多个晶体元件的拼接测量元件中,所述晶体元件共同经受待测量的机械变量,并且在基本垂直于这些晶体元件的电(x)轴的相对表面上设置有导电电极,其剪切产生的缺点 通过使用由点组32的晶体构成的晶体元素(2)可以防止应力,其中存在两种相反类型的对映体,l和r,其中使用的部分晶体元素属于两种对映体类型l或r中的一种 ,并且具有x轴,α1或α2的两个绝对取向中的一个,而剩余的晶体元素属于相反的对映型并且具有相反的x轴取向。