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1. 发明授权

US09528502B2 System for conversing thermal energy into electrical energy 有权
标题翻译：将热能转化为电能的系统
公开(公告)号：US09528502B2
公开(公告)日：2016-12-27
申请号：US14232092
申请日：2012-07-09
申请人： Guillaume Savelli , Philippe Coronel , Stéphane Monfray , Thomas Skotnicki
发明人： Guillaume Savelli , Philippe Coronel , Stéphane Monfray , Thomas Skotnicki
IPC分类号： H02N2/00 , H02N10/00 , H02N1/08 , F03G7/06 , H01L41/113 , H02N2/18
CPC分类号： F03G7/06 , F03G7/065 , H01L41/1136 , H02N2/18 , H02N2/188
摘要： An assembly converting thermal energy into electrical energy including: at least one temperature sensitive bimetallic strip arranged in a space delimited by a hot source and a cold source facing each other, the bimetallic strip extending along a longitudinal axis; at least one suspended element fixed in movement to the sensitive element and extending laterally from the sensitive element and including a free end; and at least one piezoelectric element suspended from a part fixed relative to the sensitive element and vibrated by the suspended element such that it is vibrated when the bimetallic strip changes configuration and the suspended element comes into contact with the piezoelectric element, the piezoelectric element being located outside the space defined between the bimetallic strip and the hot source and outside the space between the bimetallic strip and the cold source.
摘要翻译：一种将热能转换成电能的组件，包括：至少一个温度敏感的双金属条，布置在由热源和相互面对的冷源界定的空间中，双金属条沿着纵轴延伸; 固定在所述敏感元件上并且从所述敏感元件横向延伸并且包括自由端的至少一个悬挂元件; 以及至少一个压电元件，其从相对于所述敏感元件固定的部分悬挂并由所述悬挂元件振动，使得当所述双金属条改变构型并且所述悬挂元件与所述压电元件接触时，所述压电元件被振动，所述压电元件位于在双金属条和热源之间限定的空间之外以及双金属条和冷源之间的空间之外。

2. 发明授权

US07638844B2 Manufacturing method of semiconductor-on-insulator region structures 有权
标题翻译：绝缘体上半导体区域结构的制造方法
公开(公告)号：US07638844B2
公开(公告)日：2009-12-29
申请号：US11713553
申请日：2007-03-02
申请人： Stéphane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillett-Beranger
发明人： Stéphane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillett-Beranger
IPC分类号： H01L23/62 , H01L21/00
CPC分类号： H01L21/76202 , H01L21/76251 , H01L29/66772 , H01L29/78603 , H01L29/78606
摘要： A single-crystal silicon region on insulator on silicon intended to receive at least one component, the insulator having overthicknesses.
摘要翻译：硅上的绝缘体上的单晶硅区域旨在接收至少一个元件，绝缘体具有厚度。

3. 发明授权

US08159109B2 Microresonator 有权
标题翻译：微谐振器
公开(公告)号：US08159109B2
公开(公告)日：2012-04-17
申请号：US12850126
申请日：2010-08-04
申请人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
发明人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
IPC分类号： H01L21/00
CPC分类号： H03H9/2405 , H03H3/0072 , H03H2009/02496
摘要： A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.
摘要翻译：一种微谐振器，包括单晶硅谐振元件和靠近谐振元件放置的至少一个激活电极，其中谐振元件放置在覆盖衬底的半导体层的开口中，激活电极形成在半导体层中并在开幕式的水平。

4. 发明申请

US20100295416A1 MICRORESONATOR 有权
标题翻译：微型计算机
公开(公告)号：US20100295416A1
公开(公告)日：2010-11-25
申请号：US12850126
申请日：2010-08-04
申请人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
发明人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
IPC分类号： H02N1/08
CPC分类号： H03H9/2405 , H03H3/0072 , H03H2009/02496
摘要： A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.
摘要翻译：一种微谐振器，包括单晶硅谐振元件和靠近谐振元件放置的至少一个激活电极，其中谐振元件放置在覆盖衬底的半导体层的开口中，激活电极形成在半导体层中并在开幕式的水平。

5. 发明授权

US08693165B2 Electrical energy generation device 有权
标题翻译：电能发电装置
公开(公告)号：US08693165B2
公开(公告)日：2014-04-08
申请号：US13332124
申请日：2011-12-20
申请人： Thomas Skotnicki , Stéphane Monfray
发明人： Thomas Skotnicki , Stéphane Monfray
IPC分类号： H01G4/38 , H01G9/00 , H01G2/08
CPC分类号： H01G9/0003 , H01G2/08 , H01G9/155 , H01L37/02
摘要： A device for generating electrical energy from the heat dissipated by a heat source, comprising: a capacitor comprising two electrodes between which a ferroelectric material is present, said capacitor being arranged so as to be positioned to capture all or part of the heat dissipated by said heat source; a capacitive element a first electrode of which is connected to a first electrode of said capacitor; a recovery circuit interposed between the second electrode of said capacitor and the second electrode of the capacitive element, and able to have the current flowing between said second electrodes pass through it. a mechanism adapted to move the capacitor with respect to the heat source, said mechanism having at least one arm able to move between two positions, the capacitor being closer to the heat source in one of the two positions.
摘要翻译：一种用于从由热源消散的热量产生电能的装置，包括：电容器，包括两个电极，所述两个电极之间存在铁电材料，所述电容器被布置成被定位成捕获由所述热源; 电容元件，其第一电极连接到所述电容器的第一电极; 插入在所述电容器的第二电极和电容元件的第二电极之间并且能够使在所述第二电极之间流动的电流通过其的恢复电路。适于相对于所述热源移动所述电容器的机构，所述机构具有能够在两个位置之间移动的至少一个臂，所述电容器在所述两个位置中的一个位置更靠近所述热源。

6. 发明申请

US20120153905A1 ELECTRICAL ENERGY GENERATION DEVICE 有权
标题翻译：电能发电装置
公开(公告)号：US20120153905A1
公开(公告)日：2012-06-21
申请号：US13332124
申请日：2011-12-20
申请人： Thomas Skotnicki , Stéphane Monfray
发明人： Thomas Skotnicki , Stéphane Monfray
IPC分类号： H02N1/00
CPC分类号： H01G9/0003 , H01G2/08 , H01G9/155 , H01L37/02
摘要： A device for generating electrical energy from the heat dissipated by a heat source, comprising: a capacitor comprising two electrodes between which a ferroelectric material is present, said capacitor being arranged so as to be positioned to capture all or part of the heat dissipated by said heat source; a capacitive element a first electrode of which is connected to a first electrode of said capacitor; a recovery circuit interposed between the second electrode of said capacitor and the second electrode of the capacitive element, and able to have the current flowing between said second electrodes pass through it. a mechanism adapted to move the capacitor with respect to the heat source, said mechanism having at least one arm able to move between two positions, the capacitor being closer to the heat source in one of the two positions.
摘要翻译：一种用于从由热源消散的热量产生电能的装置，包括：电容器，包括两个电极，所述两个电极之间存在铁电材料，所述电容器被布置成被定位成捕获由所述热源; 电容元件，其第一电极连接到所述电容器的第一电极; 插入在所述电容器的第二电极和电容元件的第二电极之间并且能够使在所述第二电极之间流动的电流通过其的恢复电路。适于相对于所述热源移动所述电容器的机构，所述机构具有能够在两个位置之间移动的至少一个臂，所述电容器在所述两个位置中的一个位置更靠近所述热源。

7. 发明申请

US20110121391A1 METHOD FOR MANUFACTURING A SUSPENDED MEMBRANE AND DUAL-GATE MOS TRANSISTOR 有权
标题翻译：制造悬浮膜和双栅极MOS晶体管的方法
公开(公告)号：US20110121391A1
公开(公告)日：2011-05-26
申请号：US12949286
申请日：2010-11-18
申请人： Stéphane Monfray , Thomas Skotnicki
发明人： Stéphane Monfray , Thomas Skotnicki
IPC分类号： H01L29/786 , H01L21/762
CPC分类号： H01L29/786 , H01L29/78648
摘要： A method for manufacturing a suspended membrane in a single-crystal semiconductor substrate, including the steps of: forming in the substrate an insulating ring delimiting an active area, removing material from the active area, successively forming in the active area a first and a second layers, the second layer being a single-crystal semiconductor layer, etching a portion of the internal periphery of said ring down to a depth greater than the thickness of the second layer, removing the first layer so that the second layer formed a suspended membrane anchored in the insulating ring.
摘要翻译：一种用于制造单晶半导体衬底中的悬浮膜的方法，包括以下步骤：在衬底中形成限定有源区的绝缘环，从有源区去除材料，在有源区中依次形成第一和第二层，所述第二层是单晶半导体层，将所述环的内周的一部分蚀刻到大于所述第二层的厚度的深度，去除所述第一层，使得所述第二层形成悬浮膜在绝缘环中。

8. 发明授权

US07436005B2 Process for fabricating a heterostructure-channel insulated-gate field-effect transistor, and the corresponding transistor 有权
标题翻译：用于制造异质结构通道绝缘栅场效应晶体管的工艺及相应的晶体管
公开(公告)号：US07436005B2
公开(公告)日：2008-10-14
申请号：US11227681
申请日：2005-09-15
申请人： Stéphane Monfray , Stéphan Borel , Thomas Skotnicki
发明人： Stéphane Monfray , Stéphan Borel , Thomas Skotnicki
IPC分类号： H01L29/94
CPC分类号： H01L29/1054 , H01L29/0649 , H01L29/66651 , H01L29/78654 , H01L29/78687
摘要： The insulated-gate field-effect transistor includes a substrate surmounted by a layer of silicon-germanium alloy, the ratio of the germanium concentration to the silicon concentration of which increases towards the surface of the substrate. The transistor is formed on the active zone in the silicon-germanium alloy layer and lies between two isolating zones. The transistor includes a narrow heterostructure strained-semiconductor channel including a SiGe alloy layer in compression and a silicon layer in tension, extending between the gate and a dielectric block buried in the substrate.
摘要翻译：绝缘栅场效应晶体管包括由硅 - 锗合金层覆盖的衬底，其锗浓度与硅浓度之比朝衬底表面增加。晶体管形成在硅 - 锗合金层的有源区上，位于两个隔离区之间。晶体管包括窄压电晶体半导体通道，其包括压缩的SiGe合金层和张力的硅层，其在栅极和掩埋在衬底中的介质块之间延伸。

9. 发明授权

US08878258B2 Detector of biological or chemical material and corresponding array of detectors 有权
标题翻译：生物或化学材料的检测器和相应的检测器阵列
公开(公告)号：US08878258B2
公开(公告)日：2014-11-04
申请号：US12914033
申请日：2010-10-28
申请人： Stéphane Monfray , Thomas Skotnicki
发明人： Stéphane Monfray , Thomas Skotnicki
IPC分类号： G01N27/403 , H01L21/00 , G01N33/543 , G01N27/414
CPC分类号： G01N27/414 , G01N27/4145 , G01N33/48707 , G01N33/54373 , G01N33/5438
摘要： A detector of biological or chemical material, including a MOS transistor having its channel region inserted between upper and lower insulated gates, the upper insulated gate including a detection layer capable of generating a charge at the interface of the upper insulated gate and of its gate insulator, the thickness of the upper gate insulator being smaller than the thickness of the lower gate insulator.
摘要翻译：一种生物或化学材料的检测器，包括其沟道区域插入在上下绝缘栅之间的MOS晶体管，上绝缘栅包括能够在上绝缘栅极及其栅极绝缘体的界面处产生电荷的检测层，上栅极绝缘体的厚度小于下栅极绝缘体的厚度。

10. 发明授权

US08586445B2 Method for manufacturing a suspended membrane and dual-gate MOS transistor 有权
公开(公告)号：US08586445B2
公开(公告)日：2013-11-19
申请号：US12949286
申请日：2010-11-18
申请人： Stéphane Monfray , Thomas Skotnicki
发明人： Stéphane Monfray , Thomas Skotnicki
IPC分类号： H01L29/786 , H01L21/762
CPC分类号： H01L29/786 , H01L29/78648
摘要： A method for manufacturing a suspended membrane in a single-crystal semiconductor substrate, including the steps of: forming in the substrate an insulating ring delimiting an active area, removing material from the active area, successively forming in the active area a first and a second layers, the second layer being a single-crystal semiconductor layer, etching a portion of the internal periphery of said ring down to a depth greater than the thickness of the second layer, removing the first layer so that the second layer formed a suspended membrane anchored in the insulating ring.

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