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    • 1. 发明申请
    • METHOD AND EQUIPMENT FOR SELF-CONFIGURING TRANSMISSION IN SELF-ORGANIZED NETWORK
    • 自组织网络中自配置传输的方法和设备
    • US20120084415A1
    • 2012-04-05
    • US13375907
    • 2010-04-22
    • Guangwu HuHaitao Huang
    • Guangwu HuHaitao Huang
    • G06F15/177
    • H04L61/2015H04L61/6063H04W8/26H04W12/06H04W88/08H04W92/045
    • The present invention discloses a method and device for transmission self-configuration in a Self-Organized Network (SON), said method includes: a Dynamic Host Configuration Protocol (DHCP) client reporting a device identifier of this DHCP client to a DHCP server; said DHCP server configuring a transmission parameter for said DHCP client according to said device identifier, and sending said transmission parameter down to said DHCP client, said transmission parameter at least including an IP address of said DHCP client; and said DHCP client performing self-configuration according to said transmission parameter. The present invention uses the device identifier to allocate a fixed IP address, which is able to overcome the drawbacks caused by using the MAC address to allocate the fixed IP, and has a very strong maintainability.
    • 本发明公开了一种自组织网络(SON)中传输自配置的方法和装置,所述方法包括:动态主机配置协议(DHCP)客户端向DHCP服务器报告该DHCP客户端的设备标识符; 所述DHCP服务器根据所述设备标识符配置所述DHCP客户端的传输参数,并将所述传输参数发送给所述DHCP客户端,所述传输参数至少包括所述DHCP客户端的IP地址; 并且所述DHCP客户端根据所述传输参数执行自配置。 本发明使用设备标识符来分配固定IP地址,其能够克服通过使用MAC地址分配固定IP所引起的缺点,并且具有非常强的可维护性。
    • 6. 发明申请
    • Synthesis of metal phosphates
    • 金属磷酸盐的合成
    • US20050196334A1
    • 2005-09-08
    • US10794327
    • 2004-03-04
    • M. SaidiHaitao Huang
    • M. SaidiHaitao Huang
    • C01B25/45H01M4/58H01M10/052
    • H01M4/5825C01B25/45H01M10/052
    • The present invention relates to a method for preparing a metal phosphate which comprises milling in a carbonaceous vessel a lithium source, a phosphate source, such as LiH2PO4, and a metal oxide containing a metal ion wherein the metal ion is capable of being reduced, to produced a milled mixture and heating the milled mixture in an inert atmosphere at a temperature and for a time sufficient to form a metal phosphate wherein the metal ion of the metal oxide is reduced in oxidation state without the direct addition of a reducing agent to the starting materials. In another embodiment the present invention relates to a method for preparing a mixed metal phosphate which comprises milling a lithium source and a phosphate source, such as LiH2PO4, a metal oxide and another metal compound wherein at least one of the metal compounds contains a metal ion capable of being reduced to produce a milled mixture and heating the resulting milled mixture in an inert atmosphere at a temperature and for a time sufficient to form a mixed metal phosphate, wherein the oxidation state of at least one of the metal ions is reduced in oxidation state without the direct addition of a reducing agent to the reactants. It is another object of the invention to provide electrochemically active materials produced by said methods.
    • 本发明涉及一种制备金属磷酸盐的方法,其包括在碳质容器中研磨锂源,磷酸盐源,例如LiH 2 PO 4,和 含有金属离子的金属氧化物,其中能够还原金属离子,以制备研磨的混合物,并在惰性气氛中在足以形成金属磷酸盐的温度和时间下加热研磨的混合物,其中金属的金属离子 氧化物在氧化状态下降低,而没有将还原剂直接加入原料中。 在另一个实施方案中,本发明涉及一种制备混合金属磷酸盐的方法,该方法包括将锂源和磷酸盐源如LiH 2 PO 4, 氧化物和另一种金属化合物,其中至少一种金属化合物含有能够还原的金属离子以产生研磨的混合物,并将所得研磨的混合物在惰性气氛中在足以形成混合金属磷酸盐的温度和时间 其中至少一种金属离子的氧化态在氧化状态下降低,而没有将还原剂直接加入到反应物中。 本发明的另一个目的是提供通过所述方法生产的电化学活性材料。
    • 8. 发明授权
    • Power-on-reset circuit with brown-out reset for multiple power supplies
    • 上电复位电路具有多个电源的欠压复位功能
    • US08106688B2
    • 2012-01-31
    • US12620689
    • 2009-11-18
    • Haitao HuangMin ZhangLiding Yin
    • Haitao HuangMin ZhangLiding Yin
    • H03K7/00
    • H03K17/22H03K17/24
    • A power-on reset circuit includes a first circuit and a second circuit. The first circuit include a first NMOS transistor having a gate controlled by a low voltage supply VDD_L, a resistor connected between the source of the first NMOS transistor and a voltage supply VSS that is lower than VDD_L, and one or more diodes serially connected between a high voltage supply VDD_H and the drain of the first NMOS transistor. The second circuit includes a first PMOS transistor having a source connected to VDD_L, a second PMOS transistor having a source connected to the drain of first PMOS transistor, a second NMOS transistor connected between the drain of the second PMOS transistor and VSS, and an inverter configured to output a signal in response to the power on of the high voltage supply VDD_H and the low voltage supply VDD_L.
    • 上电复位电路包括第一电路和第二电路。 第一电路包括具有由低电压电源VDD_L控制的栅极的第一NMOS晶体管,连接在第一NMOS晶体管的源极和低于VDD_L的电压源VSS之间的电阻器,以及一个或多个二极管,串联连接在 高压电源VDD_H和第一NMOS晶体管的漏极。 第二电路包括具有连接到VDD_L的源极的第一PMOS晶体管,具有连接到第一PMOS晶体管的漏极的源极的第二PMOS晶体管,连接在第二PMOS晶体管的漏极和VSS之间的第二NMOS晶体管,以及反相器 被配置为响应于高压电源VDD_H和低电压电源VDD_L的电源接通而输出信号。