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    • 1. 发明申请
    • NAND flash memory management
    • NAND闪存管理
    • US20060239075A1
    • 2006-10-26
    • US11115004
    • 2005-04-26
    • Gregory WilliamsHarjit SinghMichael LoveStephen Au
    • Gregory WilliamsHarjit SinghMichael LoveStephen Au
    • G11C16/04
    • G11C16/10G06F12/0246G11C29/76G11C2216/14
    • A memory controller is utilized to overcome NAND flash memory's propensity for comprising bad blocks of memory. The memory controller utilizes minimal hardware and is essentially transparent to a device requesting access to the NAND memory. A NAND flash memory device is configured to comprise a set of main blocks of memory and a set of auxiliary blocks of memory. Each block is divided into pages of memory and each page includes metadata. The metadata includes a block status indicator, indicating whether a block is good or bad. When receiving a request to access a page in the NAND flash memory, if the block in which the page resides is good, that block is accessed. If the block is bad, auxiliary memory is searched until a block containing the address of the bad block in its metadata is found. The found block is accessed in lieu of the bad block.
    • 利用存储器控制器来克服NAND闪速存储器包含坏块存储器的倾向。 存储器控制器利用最小的硬件,并且对于请求访问NAND存储器的设备基本上是透明的。 NAND闪存设备被配置为包括一组主存储器块和一组辅助存储器块。 每个块分为内存页面,每个页面都包含元数据。 元数据包括块状态指示符,指示块是好还是坏。 当接收到访问NAND闪存中的页面的请求时,如果页面驻留的块好,则访问该块。 如果块是坏的,则搜索辅助存储器,直到找到包含其元数据中坏块地址的块。 找到的块被访问以代替坏块。