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1. 发明申请

US20080216864A1 METHOD AND SYSTEM FOR DISTRIBUTING GAS FOR A BEVEL EDGE ETCHER 有权
标题翻译：一种用于分布水边蚀刻器的气体的方法和系统
公开(公告)号：US20080216864A1
公开(公告)日：2008-09-11
申请号：US11697695
申请日：2007-04-06
申请人： Greg Sexton , Andrew Bailey , Alan Schoepp
发明人： Greg Sexton , Andrew Bailey , Alan Schoepp
IPC分类号： B08B6/00 , C25F3/30
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32009 , H01J37/3244 , H01J37/32706 , Y10S134/902
摘要： A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.
摘要翻译：提供了一种构造成清洁衬底的斜边缘的等离子体蚀刻处理室。该室包括底边缘电极和限定在底部边缘电极上的顶部边缘电极。顶边电极和底边电极被配置为产生清洁等离子体以清洁基板的斜边缘。该室包括通过处理室的顶表面限定的气体进料。气体进料引入处理气体，用于在位于基板的轴线和顶部边缘电极之间的处理室中的位置处冲击清洁等离子体。泵出口通过腔室的顶表面和沿着衬底的中心轴线定位的泵出口来限定。还提供了一种用于清洁基板的斜边缘的方法。

2. 发明授权

US06567258B2 High temperature electrostatic chuck 有权
公开(公告)号：US06567258B2
公开(公告)日：2003-05-20
申请号：US10075601
申请日：2002-02-15
申请人： Greg Sexton , Mark Allen Kennard , Alan Schoepp
发明人： Greg Sexton , Mark Allen Kennard , Alan Schoepp
IPC分类号： H02N1300
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A hot electrostatic chuck having an expansion joint between a chuck body and a heat transfer body. The expansion joint provides a hermetic seal, accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or controls the amount of heat conducted from the chuck body to the heat transfer body. A plenum between spaced apart surfaces of the chuck body and the heat transfer body is filled with a heat transfer gas such as helium which passes through gas passages such as lift pin holes in the chuck body for backside cooling of a substrate supported on the chuck. The heat transfer gas in the plenum also conducts heat from the chuck body into the heat transfer body. The chuck body can be made of a material with desired electrical and/or thermal properties such as a metallic material or ceramic material. The chuck can be used in various semiconductor processes such as plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of noble metals such as Pt which require etching at high temperatures to volatilize low volatility etch products.

3. 发明授权

US06377437B1 High temperature electrostatic chuck 有权
标题翻译：高温静电吸盘
公开(公告)号：US06377437B1
公开(公告)日：2002-04-23
申请号：US09469287
申请日：1999-12-22
申请人： Greg Sexton , Mark Allen Kennard , Alan Schoepp
发明人： Greg Sexton , Mark Allen Kennard , Alan Schoepp
IPC分类号： H02N1300
CPC分类号： H01L21/6831 , Y10T279/23
摘要： A hot electrostatic chuck having an expansion joint between a chuck body and a heat transfer body. The expansion joint provides a hermetic seal, accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or controls the amount of heat conducted from the chuck body to the heat transfer body. A plenum between spaced apart surfaces of the chuck body and the heat transfer body is filled with a heat transfer gas such as helium which passes through gas passages such as lift pin holes in the chuck body for backside cooling of a substrate supported on the chuck. The heat transfer gas in the plenum also conducts heat from the chuck body into the heat transfer body. The chuck body can be made of a material with desired electrical and/or thermal properties such as a metallic material or ceramic material. The chuck can be used in various semiconductor processes such as plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of noble metals such as Pt which require etching at high temperatures to volatilize low volatility etch products.
摘要翻译：一种具有在卡盘体和传热体之间的伸缩接头的热静电吸盘。膨胀接头提供气密密封，适应卡盘体和传热体之间的不同的热应力，和/或控制从卡盘体传导到传热体的热量。在卡盘体和传热体的间隔开的表面之间的一个增压室填充有诸如氦气的传热气体，其通过诸如卡盘体中的提升销孔的气体通道，用于支撑在卡盘上的基板的背面冷却。集气室中的传热气体还将热量从卡盘体传导到传热体中。卡盘体可以由具有所需电气和/或热性质的材料制成，例如金属材料或陶瓷材料。卡盘可用于各种半导体工艺，例如等离子体蚀刻，化学气相沉积，溅射，离子注入，灰化等。在超过200℃的温度下操作卡盘的能力允许其用于等离子体蚀刻的贵金属如Pt，其需要在高温下进行蚀刻以挥发低挥发性蚀刻产物。

4. 发明授权

US06669783B2 High temperature electrostatic chuck 有权
标题翻译：高温静电吸盘
公开(公告)号：US06669783B2
公开(公告)日：2003-12-30
申请号：US09892458
申请日：2001-06-28
申请人： Greg Sexton , Alan Schoepp , Mark Allen Kennard
发明人： Greg Sexton , Alan Schoepp , Mark Allen Kennard
IPC分类号： H01L21306
CPC分类号： H01L21/67103 , H01L21/6831 , H01L21/6833
摘要： An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.
摘要翻译：一种适于在高温下使用的静电卡盘，其具有在卡盘体和传热体之间具有作为外管和热扼流圈的可替换的膨胀组件。膨胀组件适应卡盘体和传热体之间的不同的热应力，和/或限制从卡盘体到传热体的直接热传导。在超过200℃的温度下操作卡盘的能力允许其用于等离子体蚀刻诸如铂的材料，其需要高温挥发低挥发性蚀刻产物以及常规等离子体蚀刻，化学气相沉积，溅射，离子注入，灰化等。可移除连接的扩展组件的新颖设计允许卡盘对于较大的工件进行缩放，以通过更多的加热周期保持服务并且经济地维护。

5. 发明授权

US08475624B2 Method and system for distributing gas for a bevel edge etcher 有权
标题翻译：用于分配斜边蚀刻器的气体的方法和系统
公开(公告)号：US08475624B2
公开(公告)日：2013-07-02
申请号：US11697695
申请日：2007-04-06
申请人： Greg Sexton , Andrew Bailey, III , Alan Schoen
发明人： Greg Sexton , Andrew Bailey, III , Alan Schoen
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32009 , H01J37/3244 , H01J37/32706 , Y10S134/902
摘要： A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.
摘要翻译：提供了一种构造成清洁衬底的斜边缘的等离子体蚀刻处理室。该室包括底边缘电极和限定在底部边缘电极上的顶部边缘电极。顶边电极和底边电极被配置为产生清洁等离子体以清洁基板的斜边缘。该室包括通过处理室的顶表面限定的气体进料。气体进料引入处理气体，用于在位于基板的轴线和顶部边缘电极之间的处理室中的位置处冲击清洁等离子体。泵出口通过腔室的顶表面和沿着衬底的中心轴线定位的泵出口来限定。还提供了一种用于清洁基板的斜边缘的方法。

6. 发明申请

US20080190448A1 BEVEL CLEAN DEVICE 有权
标题翻译：水清洁装置
公开(公告)号：US20080190448A1
公开(公告)日：2008-08-14
申请号：US11672922
申请日：2007-02-08
申请人： Yunsang Kim , Andrew Bailey , Greg Sexton , Keechan Kim , Andras Kuthi
发明人： Yunsang Kim , Andrew Bailey , Greg Sexton , Keechan Kim , Andras Kuthi
IPC分类号： B08B6/00
CPC分类号： H01L21/02087
摘要： An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.
摘要翻译：提供了用于在晶片的斜面上去除材料的设备。提供直径小于晶片直径的晶片支架，其中所述晶片支撑件位于所述晶片的第一侧上，并且其中所述晶片的外边缘延伸超过所述晶片支撑件围绕所述晶片。 RF电源电连接到晶片。中心盖与晶片支撑件间隔开。第一导电环位于晶片的第一侧并与晶片间隔开。第二导电环与晶片间隔开。导电衬套围绕晶片的外边缘。开关在衬垫和接地之间，允许衬管从接地切换到浮动。

7. 发明授权

US08137501B2 Bevel clean device 有权
标题翻译：斜角清洁装置
公开(公告)号：US08137501B2
公开(公告)日：2012-03-20
申请号：US11672922
申请日：2007-02-08
申请人： Yunsang Kim , Andrew Bailey, III , Greg Sexton , Keechan Kim , Andras Kuthi
发明人： Yunsang Kim , Andrew Bailey, III , Greg Sexton , Keechan Kim , Andras Kuthi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02087
摘要： An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.
摘要翻译：提供了用于在晶片的斜面上去除材料的设备。提供直径小于晶片直径的晶片支架，其中所述晶片支撑件位于所述晶片的第一侧上，并且其中所述晶片的外边缘延伸超过所述晶片支撑件围绕所述晶片。 RF电源电连接到晶片。中心盖与晶片支撑件间隔开。第一导电环位于晶片的第一侧并与晶片间隔开。第二导电环与晶片间隔开。导电衬套围绕晶片的外边缘。开关在衬垫和接地之间，允许衬管从接地切换到浮动。

8. 发明申请

US20130126092A1 Plasma Processing Assemblies Including Hinge Assemblies 有权
标题翻译：包括铰链组件的等离子体处理组件
公开(公告)号：US20130126092A1
公开(公告)日：2013-05-23
申请号：US13315929
申请日：2011-12-09
申请人： Greg Sexton
发明人： Greg Sexton
IPC分类号： C23F1/08
CPC分类号： H01J37/3288 , H01J37/32513 , H01J37/32807 , Y10T16/525 , Y10T16/5275 , Y10T16/529 , Y10T16/53225 , Y10T16/5324 , Y10T16/53247 , Y10T16/5325 , Y10T16/53864 , Y10T16/547
摘要： In one embodiment, a plasma processing assembly may include an upper process body coupled to a hinge body and a lower process body coupled to a base hinge member. The hinge body can be pivotally engaged with the base hinge member. A self locking latch can be pivotally engaged with the base hinge member. When the hinge body is rotated around the first axis of rotation, the protruding latch engagement member can contact the self locking latch and can rotate the self locking latch around the second axis of rotation opposite to the bias direction. The self locking latch can rotate around the second axis of rotation in the bias direction and can block the hinge body from rotating around the first axis of rotation.
摘要翻译：在一个实施例中，等离子体处理组件可以包括联接到铰链主体的上部工艺主体和联接到基座铰链部件的下部工艺主体。铰链主体可以与基座铰链构件枢转地接合。自锁闩可以与基座铰链构件枢转地接合。当铰链主体围绕第一旋转轴线旋转时，突出的闩锁接合构件可以接触自锁定闩锁并且可以围绕与偏置方向相反的第二旋转轴线旋转自锁闩锁。自锁闩可以在偏置方向上围绕第二旋转轴线旋转，并且可以阻止铰链体围绕第一旋转轴旋转。

9. 发明申请

US20130056078A1 Methods for Enhanced Fluid Delivery on Bevel Etch Applications 有权
标题翻译：在锥形蚀刻应用中增强流体输送的方法
公开(公告)号：US20130056078A1
公开(公告)日：2013-03-07
申请号：US13668741
申请日：2012-11-05
申请人： Miguel A. Saldana , Greg Sexton
发明人： Miguel A. Saldana , Greg Sexton
IPC分类号： F17D1/00
CPC分类号： H01L21/6708 , H01L21/67017 , Y10T137/0318
摘要： An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve.
摘要翻译：一种用于在半导体处理室中提供用于处理衬底的多个工艺流体的装置。该装置包括多个过程流体供应阀和限定在交叉阀和调节供应阀之间的流体供应网络。该装置还包括通过调节供应阀连接到流体供应网络的调节流体供应。该装置还包括多个工艺流体，其通过多个工艺流体供应阀连接到流体供应网络。具有基板支撑件的处理室也包括在该装置中。所述处理室还包括边缘流体供应源和中心流体供应源，所述边缘流体供应通过边缘使能阀连接到所述流体供应网络，并且所述中心供应件通过中心使能阀连接到所述流体供应网络。

10. 发明授权

US08826857B2 Plasma processing assemblies including hinge assemblies 有权
标题翻译：等离子体处理组件包括铰链组件
公开(公告)号：US08826857B2
公开(公告)日：2014-09-09
申请号：US13315929
申请日：2011-12-09
申请人： Greg Sexton
发明人： Greg Sexton
IPC分类号： C23C16/50 , H01L21/306 , C23F1/00 , E05D1/00 , E05D15/50 , E05F1/08 , H01J37/32 , C23C16/06 , C23C16/22
CPC分类号： H01J37/3288 , H01J37/32513 , H01J37/32807 , Y10T16/525 , Y10T16/5275 , Y10T16/529 , Y10T16/53225 , Y10T16/5324 , Y10T16/53247 , Y10T16/5325 , Y10T16/53864 , Y10T16/547
摘要： In one embodiment, a plasma processing assembly may include an upper process body coupled to a hinge body and a lower process body coupled to a base hinge member. The hinge body can be pivotally engaged with the base hinge member. A self locking latch can be pivotally engaged with the base hinge member. When the hinge body is rotated around the first axis of rotation, the protruding latch engagement member can contact the self locking latch and can rotate the self locking latch around the second axis of rotation opposite to the bias direction. The self locking latch can rotate around the second axis of rotation in the bias direction and can block the hinge body from rotating around the first axis of rotation.
摘要翻译：在一个实施例中，等离子体处理组件可以包括联接到铰链主体的上部工艺主体和联接到基座铰链部件的下部工艺主体。铰链主体可以与基座铰链构件枢转地接合。自锁闩可以与基座铰链构件枢转地接合。当铰链主体围绕第一旋转轴线旋转时，突出的闩锁接合构件可以接触自锁定闩锁并且可以围绕与偏置方向相反的第二旋转轴线旋转自锁闩锁。自锁闩可以在偏置方向上围绕第二旋转轴线旋转，并且可以阻止铰链体围绕第一旋转轴旋转。

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