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1. 发明授权

US08137501B2 Bevel clean device 有权
标题翻译：斜角清洁装置
公开(公告)号：US08137501B2
公开(公告)日：2012-03-20
申请号：US11672922
申请日：2007-02-08
申请人： Yunsang Kim , Andrew Bailey, III , Greg Sexton , Keechan Kim , Andras Kuthi
发明人： Yunsang Kim , Andrew Bailey, III , Greg Sexton , Keechan Kim , Andras Kuthi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02087
摘要： An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.
摘要翻译：提供了用于在晶片的斜面上去除材料的设备。提供直径小于晶片直径的晶片支架，其中所述晶片支撑件位于所述晶片的第一侧上，并且其中所述晶片的外边缘延伸超过所述晶片支撑件围绕所述晶片。 RF电源电连接到晶片。中心盖与晶片支撑件间隔开。第一导电环位于晶片的第一侧并与晶片间隔开。第二导电环与晶片间隔开。导电衬套围绕晶片的外边缘。开关在衬垫和接地之间，允许衬管从接地切换到浮动。

2. 发明授权

US08475624B2 Method and system for distributing gas for a bevel edge etcher 有权
标题翻译：用于分配斜边蚀刻器的气体的方法和系统
公开(公告)号：US08475624B2
公开(公告)日：2013-07-02
申请号：US11697695
申请日：2007-04-06
申请人： Greg Sexton , Andrew Bailey, III , Alan Schoen
发明人： Greg Sexton , Andrew Bailey, III , Alan Schoen
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32009 , H01J37/3244 , H01J37/32706 , Y10S134/902
摘要： A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.
摘要翻译：提供了一种构造成清洁衬底的斜边缘的等离子体蚀刻处理室。该室包括底边缘电极和限定在底部边缘电极上的顶部边缘电极。顶边电极和底边电极被配置为产生清洁等离子体以清洁基板的斜边缘。该室包括通过处理室的顶表面限定的气体进料。气体进料引入处理气体，用于在位于基板的轴线和顶部边缘电极之间的处理室中的位置处冲击清洁等离子体。泵出口通过腔室的顶表面和沿着衬底的中心轴线定位的泵出口来限定。还提供了一种用于清洁基板的斜边缘的方法。

3. 发明授权

US07718542B2 Low-k damage avoidance during bevel etch processing 有权
标题翻译：斜角蚀刻加工过程中的低k损伤避免
公开(公告)号：US07718542B2
公开(公告)日：2010-05-18
申请号：US11510309
申请日：2006-08-25
申请人： Yunsang Kim , Andrew Bailey, III , Jack Chen
发明人： Yunsang Kim , Andrew Bailey, III , Jack Chen
IPC分类号： H01L21/302
CPC分类号： H01L21/02041 , H01L21/02087 , H01L21/31116 , H01L21/31138 , H01L21/67069 , H01L21/6833
摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.
摘要翻译：提供了蚀刻基板的斜边缘的方法。在蚀刻层上形成图案化的光致抗蚀剂掩模。清洁斜面边缘，包括提供包括CO 2，CO，C x H y，H 2，NH 3，C x H y Fz及其组合中的至少一种的清洁气体，从清洁气体形成清洁等离子体，并将斜面边缘暴露于清洁等离子体。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

4. 发明授权

US08500951B2 Low-K damage avoidance during bevel etch processing 有权
标题翻译：斜角蚀刻加工期间的低K损伤避免
公开(公告)号：US08500951B2
公开(公告)日：2013-08-06
申请号：US12730146
申请日：2010-03-23
申请人： Yunsang Kim , Andrew Bailey, III , Jack Chen
发明人： Yunsang Kim , Andrew Bailey, III , Jack Chen
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02041 , H01L21/02087 , H01L21/31116 , H01L21/31138 , H01L21/67069 , H01L21/6833
摘要： A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO2, CO, CxHy, H2, NH3, CxHyFz and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.
摘要翻译：提供了蚀刻基板的斜边缘的方法。在蚀刻层上形成图案化的光致抗蚀剂掩模。清洁斜面边缘，包括提供包括CO 2，CO，C x H y，H 2，NH 3，C x H y Fz及其组合中的至少一种的清洁气体，从清洁气体形成清洁等离子体，并将斜面边缘暴露于清洁等离子体。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中，并去除光致抗蚀剂掩模。

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