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    • 1. 发明授权
    • Piezoelectric sensor for hydride gases, and fluid monitoring apparatus
comprising same
    • 用于氢化物气体的压电传感器,以及包括其的流体监测装置
    • US5827947A
    • 1998-10-27
    • US785342
    • 1997-01-17
    • Cynthia A. MillerGlenn M. Tom
    • Cynthia A. MillerGlenn M. Tom
    • E04B1/24E04C3/04E04C3/11E04C3/40G01N27/00G01N29/02G01N29/036G01N31/02G01N30/00G01N31/22
    • G01N29/036E04B1/24E04C3/11E04C3/40G01N29/022E04B2001/2415E04B2001/2439E04B2001/249E04C2003/0491G01N2291/0212G01N2291/0255G01N2291/0256G01N2291/0426
    • A sensor element for detection of a trace fluid component in a fluid stream or other fluid environment, comprising a piezoelectric crystal having a fundamental resonant frequency in response to an applied oscillating electric field, and an inert porous material coating on the piezoelectric crystal containing a metal species which is reactive with the trace fluid component to yield a solid interaction product of changed mass in relation to initial mass of the metal species interacting with the trace fluid component to yield the solid interaction product. Such sensor element may be employed in a sensor apparatus for applying an oscillating electric field to the piezoelectric crystal which generates an output resonant frequency therefrom, together with (i) sampling the output resonant frequency of the piezoelectric crystal, (ii) determining the change in resonant frequency occurring on formation of the solid interaction product, and (iii) generating an output indicative of the presence of the trace fluid component in the fluid environment. The sensor may be utilized for detection of hydride gases in environmental gas monitoring applications, as well as in end point detectors in scrubbing and other gas processing operations.
    • 一种用于检测流体流或其它流体环境中的微量流体组分的传感器元件,包括响应于施加的振荡电场而具有基本共振频率的压电晶体,以及在含有金属的压电晶体上的惰性多孔材料涂层 与微量流体组分反应的物质产生相对于与微量流体组分相互作用的金属物质的初始质量而发生质量变化的固体相互作用产物,以产生固体相互作用产物。 这种传感器元件可以用于将振荡电场施加到产生其输出谐振频率的压电晶体的传感器装置中,以及(i)对压电晶体的输出谐振频率进行采样,(ii)确定压电晶体的变化 在形成固体相互作用产物时发生的共振频率,和(iii)产生指示流体环境中痕量流体组分的存在的输出。 该传感器可用于检测环境气体监测应用中的氢化物气体,以及用于洗涤和其它气体处理操作中的终点检测器。
    • 2. 发明授权
    • Piezoelectric end point sensor for detection of breakthrough of fluid,
and fluid processing apparatus comprising same
    • 用于检测液体穿透的压电端点传感器,以及包括其的流体处理装置
    • US5977687A
    • 1999-11-02
    • US678572
    • 1996-07-12
    • Glenn M. TomCynthia A. Miller
    • Glenn M. TomCynthia A. Miller
    • G01N27/00G01N29/036H01L41/08
    • G01N29/036G01N2291/0222
    • A sensor for detection of a trace fluid component in a fluid environment, comprising: a piezoelectric crystal having a fundamental resonant frequency in response to an applied oscillating electric field; a coating on the piezoelectric crystal of a sensor material which is reactive with the trace fluid component to yield a solid interaction product of changed mass in relation to initial mass of the sensor material interacting with the trace fluid component to yield the solid interaction product; means for applying an oscillating electric field to the piezoelectric crystal which generates an output resonant frequency therefrom; means for (i) sampling the output resonant frequency of the piezoelectric crystal while the oscillating electric field is applied thereto, (ii) determining the change in resonant frequency from the fundamental resonant frequency that occurs on formation of the solid interaction product when the sensor material interacts with the trace fluid component in the fluid environment, and (iii) generating an output indicative of the presence of the trace fluid component in the environment; and means for flowing fluid from the fluid environment to the coating on the piezoelectric crystal so that the trace fluid component when present reacts with the coating to form the solid interaction product; wherein the coated piezoelectric crystal exhibits a frequency response rate to the trace fluid component in the range of from about 0.001 to about 1000 Hertz/min/(part-per-million of the fluid component). The sensor may be utilized for sensing of breakthrough in dry scrubbing of gases in semiconductor manufacturing, as well as for sensing of contaminant and hazardous gas species in ambient fluid environments, for environmental monitoring applications.
    • 一种用于在流体环境中检测痕量流体组分的传感器,包括:响应于所施加的振荡电场而具有基本共振频率的压电晶体; 传感器材料的压电晶体上的涂层,其与微量流体组分反应以产生相对于与微量流体组分相互作用的传感器材料的初始质量而质量变化的固体相互作用产物,以产生固体相互作用产物; 用于将振荡电场施加到从其产生输出谐振频率的压电晶体的装置; 用于(i)在施加振荡电场时对压电晶体的输出谐振频率进行采样的装置,(ii)当传感器材料形成时,确定在形成固体相互作用产物时发生的基本共振频率的谐振频率的变化 与流体环境中的痕量流体组分相互作用,和(iii)产生指示在环境中痕量流体组分的存在的输出; 以及用于将流体从流体环境流动到压电晶体上的涂层的装置,使得当存在的痕量流体组分与涂层反应以形成固体相互作用产物; 其中涂覆的压电晶体对痕量流体组分的频率响应速率在约0.001至约1000赫兹/分/(流体组分的百万分之一)的范围内。 该传感器可用于感测半导体制造中的气体干洗中的突破,以及用于感测环境流体环境中的污染物和有害气体物质的环境监测应用。
    • 3. 发明授权
    • Piezoelectric enviromental fluid monitoring assembly and method
    • 压电式环境监测装置及方法
    • US5817921A
    • 1998-10-06
    • US679258
    • 1996-07-12
    • Glenn M. TomCynthia A. Miller
    • Glenn M. TomCynthia A. Miller
    • G01N27/00G01N29/036G01N29/02
    • G01N29/036G01N2291/0222
    • An environmental gas monitor for detection of a trace fluid component in a fluid environment, comprising: a piezoelectric crystal having a fundamental resonant frequency in response to an applied oscillating electric field; a coating on the piezoelectric crystal of a sensor material which is reactive with the trace fluid component to yield a solid interaction product; means for applying an oscillating electric field to the piezoelectric crystal which generates an output resonant frequency therefrom; means for (i) sampling the output resonant frequency of the piezoelectric crystal while the oscillating electric field is applied thereto, (ii) determining the change in resonant frequency from the fundamental resonant frequency that occurs on formation of the solid interaction product when the sensor material interacts with the trace fluid component in the fluid environment, and (iii) generating an output indicative of the presence of the trace fluid component in the environment; means, e.g., an eductor, for flowing fluid from the fluid environment at a constant flow rate to the coating on the piezoelectric crystal so that the trace fluid component when present reacts with the coating to form the solid interaction product; wherein the coated piezoelectric crystal exhibits a frequency response rate to the trace fluid component in the range of from about 0.001 to about 1000 Hertz/min/(part-per-million of the fluid component).
    • 一种用于检测流体环境中痕量流体成分的环境气体监测器,包括:响应于所施加的振荡电场具有基本共振频率的压电晶体; 传感器材料的压电晶体上的涂层,其与微量流体组分反应以产生固体相互作用产物; 用于将振荡电场施加到从其产生输出谐振频率的压电晶体的装置; 用于(i)在施加振荡电场时对压电晶体的输出谐振频率进行采样的装置,(ii)当传感器材料形成时,确定在形成固体相互作用产物时发生的基本共振频率的谐振频率的变化 与流体环境中的痕量流体组分相互作用,和(iii)产生指示在环境中痕量流体组分的存在的输出; 意味着例如喷射器,用于将流体以恒定流速从流体环境流动到压电晶体上的涂层,使得当存在的痕量流体组分与涂层反应以形成固体相互作用产物时; 其中涂覆的压电晶体对痕量流体组分的频率响应速率在约0.001至约1000赫兹/分/(流体组分的百万分之一)的范围内。
    • 4. 发明申请
    • FLUID STORAGE AND DISPENSING SYSTEMS AND PROCESSES
    • 流体储存和分配系统和流程
    • US20110226806A1
    • 2011-09-22
    • US13149844
    • 2011-05-31
    • Kevin T. O'DoughertyGlenn M. Tom
    • Kevin T. O'DoughertyGlenn M. Tom
    • B67D7/06
    • B67D7/0288B67D7/0261B67D7/32B67D7/3227B67D7/3281B67D7/34B67D7/344F16K35/00F16K35/025F16L37/08Y10T29/49826Y10T29/53
    • Fluid storage and dispensing systems and processes involving various structures methods for fluid storage and dispensing, including, pre-connect verification couplings that are usefully employed with fluid storage and dispensing packages to ensure proper coupling and avoid fluid contamination issues, empty detect systems (e.g., monitoring pressure of dispensed liquid medium to detect pressure droop conditions) useable with fluid storage and dispensing packages incorporating liners that are pressure-compressed in the fluid dispensing operation, ergonomically enhanced structures for facilitating removal of a dispense connector from a capped vessel, cap integrity assurance systems for preventing misuse of vessel caps, and keycoding systems for ensuring coupling of proper dispense assemblies and vessels. Fluid storage and dispensing systems achieve zero or near-zero headspace character, and prevent or ameliorate solubilization effects in liquid dispensing from liners in overpack vessels.
    • 流体储存和分配系统和流程涉及用于流体储存和分配的各种结构方法,包括预先连接的验证联接件,其有效地用于流体储存和分配包装以确保适当的联接并避免流体污染问题,空的检测系统(例如, 监测分配的液体介质的压力以检测压力下降条件)可用于流体储存和分配包装,其包括在流体分配操作中被压缩的衬垫,符合人体工程学的增强结构,以便于从加盖的容器移除分配连接器, 用于防止容器盖的误用的系统,以及用于确保适当的分配组件和容器的联接的键盘系统。 流体储存和分配系统实现了零或接近零的顶空特性,并且防止或改善了液体从液体分配到外包装容器内的作用。
    • 6. 发明授权
    • Apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing sorbent-based fluid storage and dispensing system for reagent delivery
    • US06204180B1
    • 2001-03-20
    • US09002278
    • 1997-12-31
    • Glenn M. TomPeter S. KirlinJames V. McManus
    • Glenn M. TomPeter S. KirlinJames V. McManus
    • B32B1700
    • F17C11/00F17C2205/0338F17C2205/0391F17C2270/0518
    • A process for fabricating an electronic device structure on or in a substrate. A storage and dispensing vessel is provided, containing a solid-phase physical sorbent medium having physically adsorbed thereon a fluid for fabrication of the electronic device structure, e.g., a source fluid for a material constituent of the electronic device structure, or a reagent such as an etchant or mask material which is utilized in the fabrication of the electronic device structure but does not compose or form a material constituent of the electronic device structure. In the process, the source fluid is desorbed from the physical sorbent medium and dispensing source fluid from the storage and dispensing vessel, and contacted with the substrate, under conditions effective to utilize the material constituent on or in the substrate. The contacting step of the process may include process steps such as ion implantation; epitaxial growth; plasma etching; reactive ion etching; metallization; physical vapor deposition; chemical vapor deposition; cleaning; doping; etc. The process of the invention may be employed to fabricate electronic device structures such as transistors; capacitors; resistors; memory cells; dielectric material; buried doped substrate regions; metallization layers; channel stop layers; source layers; gate layers; drain layers; oxide layers; field emitter elements; passivation layers; interconnects; polycides; electrodes; trench structures; ion implanted material layers; via plugs; precursor structures for the foregoing electronic device structures; and device assemblies comprising more than one of the foregoing electronic device structures. The electronic device structure fabricated by such process may in turn may be employed as a component of an electronic product such as a telecommunications device or electronic appliance.
    • 8. 发明授权
    • Differential gas sensing in-line monitoring system
    • 差压气体检测在线监测系统
    • US5583282A
    • 1996-12-10
    • US270171
    • 1994-07-01
    • Glenn M. Tom
    • Glenn M. Tom
    • G01N29/02G01N29/22G01N33/00G01N27/00
    • G01N33/0026G01N29/02G01N29/222G01N2291/0215G01N2291/02845G01N2291/0422G01N2291/0427
    • An in-line detector system and method for real-time detection of impurity concentration in a flowing gas stream. In a specific aspect, the system may comprise an in-line monitoring system for determining the calibrated concentration of an impurity species in a flowing gas stream, in a low concentration range below a predetermined concentration value, and in a high concentration range above said predetermined concentration value. The system may utilize hygrometric sensors in the case of water as a critical impurity, or surface acoustical wave (SAW) devices coated with suitable impurity-affinity coatings. The method includes sensing the impurity species concentration in gas derived from the gas flow stream in a sequential and repetitive sensing operation. In a first sensing mode the gas is purified of impurity species prior to sensing thereof and in a second sensing mode the gas is unpurified. In the first sensing mode and second sensing mode, the cycle times are varied in accordance with the impurity species concentration. In the low concentration range the second sensing mode cycle time is longer than the first sensing mode cycle time and in the high concentration the first sensing mode cycle time is longer than the second sensing mode cycle time.
    • 一种用于实时检测流动气流中的杂质浓度的在线检测器系统和方法。 在具体方面,系统可以包括在线监测系统,用于确定在低于预定浓度值的低浓度范围内的流动气体流中的杂质种类的校准浓度,以及高于所述预定浓度范围的高浓度范围 浓度值。 在水作为关键杂质的情况下,该系统可以使用湿度传感器,或者涂覆有合适的杂质亲和性涂层的表面声波(SAW)装置。 该方法包括在顺序和重复的感测操作中感测来自气体流的气体中的杂质种类浓度。 在第一感测模式中,气体在感测之前被净化为杂质物质,并且在第二感测模式中气体是未净化的。 在第一感测模式和第二感测模式中,循环时间根据杂质种类浓度而变化。 在低浓度范围内,第二感测模式周期时间比第一感测模式周期时间长,而在高浓度时,第一感测模式周期时间比第二感测模式周期时间长。
    • 9. 发明授权
    • Process and composition for purifying semiconductor process gases to
remove Lewis acid and oxidant impurities therefrom
    • 用于净化半导体工艺气体以从其中除去路易斯酸和氧化剂杂质的方法和组合物
    • US5385689A
    • 1995-01-31
    • US84414
    • 1993-06-29
    • Glenn M. TomJames V. McManus
    • Glenn M. TomJames V. McManus
    • B01D53/02B01D53/28B01D53/40B01D53/46B01J20/02B01J20/04B01J20/26E02F9/22F15B11/05F15B11/16F15B21/08C09K3/00
    • E02F9/2235B01D53/28B01D53/40B01D53/46B01J20/02B01J20/28057B01J20/28078B01J20/321B01J20/3236E02F9/2282E02F9/2296
    • Scavenger compositions useful for purifying process gas streams, such as process gas streams, such as hydrogen, nitrogen, noble gases, diborane, and hydride gases from Groups IVA-VIA of the Periodic Table, such as arsine, phosphine, silane, germane, hydrogen selenide, and hydrogen telluride, and mixtures thereof, to remove water, oxygen, and other oxidant and Lewis acid impurities therefrom, such scavenger comprising a porous, high surface area inert support having thereon an active scavenging species, formed by the deposition on the support of a Group IA metal and pyrolysis thereof at a selected elevated temperature on said support. In another aspect, the present invention relates to a method of making a scavenger useful for purifying process gas streams, to remove water, oxygen, and other oxidant and Lewis acid impurities therefrom, and a process for purifying process gas streams to remove water, oxygen, and other oxidant and Lewis acid impurities therefrom, such process comprising contacting the impurity-containing process gas stream with a scavenger of the general type described above. In a further aspect, the invention relates to a method for using scavengers of the general type described above as back-diffusion scrubbers to protect the manufacturing process or gas supply system from inadvertent introduction of impurities, such method comprising contacting the impurity-containing process gas stream with a scavenger of the general type described above and providing in the scavenger bed one or more endpoint detectors so that back-diffusion events are observed.
    • 用于净化工艺气流的清除剂组合物,例如来自元素周期表IVA-VIA族的工艺气流,例如氢气,氮气,惰性气体,乙硼烷和氢化物气体,例如胂,膦,硅烷,锗烷,氢 硒化物和碲化氢及其混合物,以从其中除去水,氧和其它氧化剂和路易斯酸杂质,这种清除剂包括其上具有活性清除物质的多孔高表面积惰性载体,其通过沉积在载体上而形成 的IA族金属并在所述载体上在选定的升高温度下进行热解。 另一方面,本发明涉及一种制备清除剂的方法,其用于净化工艺气流,从中除去水,氧和其它氧化剂和路易斯酸杂质,以及净化工艺气流以除去水,氧气的方法 ,和其它氧化剂和路易斯酸杂质,这种方法包括使含杂质的工艺气体流与上述一般类型的清除剂接触。 在另一方面,本发明涉及一种使用上述一般类型的清除剂作为反向扩散洗涤器的方法,用于保护制造过程或气体供应系统不会意外引入杂质,这种方法包括使含杂质的工艺气体 流与上述一般类型的清除剂并在清除床中提供一个或多个端点检测器,从而观察到反向扩散事件。
    • 10. 发明授权
    • In-line detector system for real-time determination of impurity
concentration in a flowing gas stream
    • 用于实时测定流动气流中的杂质浓度的在线检测器系统
    • US5325705A
    • 1994-07-05
    • US930184
    • 1992-08-17
    • Glenn M. Tom
    • Glenn M. Tom
    • G01N9/00G01N29/02G01N33/00
    • G01N33/0026
    • An in-line detector system for real-time detection of impurity concentration in a flowing gas stream. In a specific aspect, the system may comprise a purifier unit for selective purification of gas from the gas stream, and an impurity addition unit for imparting a predetermined concentration of impurity to the gas stream, whereby the resulting concentration sensings of the purified gas, and the impurity-enhanced gas are usefully employed to calibrate an impurity concentration sensor, for continuous accurate sensing of impurity concentration in the flowing gas stream. The system may utilize hygrometric sensors in the case of water as a critical impurity, or surface acoustical wave (SAW) devices coated with suitable impurity-affinity coatings. The system has particular utility in monitoring low impurity concentration levels (e.g., from about 0.1 ppm to about 100 ppm) in gas streams employed in vapor-phase processes such as chemical vapor deposition in the manufacture of semiconductor devices.
    • 一种在线检测器系统,用于实时检测流动气流中的杂质浓度。 在具体方面,该系统可以包括用于从气流中选择性净化气体的净化器单元和用于向气流赋予预定浓度的杂质的杂质添加单元,由此所得到的净化气体的浓度检测和 杂质增强气体有用地用于校准杂质浓度传感器,用于连续精确地检测流动气流中的杂质浓度。 在水作为关键杂质的情况下,该系统可以使用湿度传感器,或者涂覆有合适的杂质亲和性涂层的表面声波(SAW)装置。 该系统在用于半导体器件制造中的气相法(例如化学气相沉积)中所用的气流中的低杂质浓度水平(例如约0.1ppm至约100ppm)具有特别的用途。