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    • 8. 发明授权
    • Reverse side etching for producing layers with strain variation
    • 用于生产具有应变变化的层的反面蚀刻
    • US5532510A
    • 1996-07-02
    • US366515
    • 1994-12-30
    • Netzer Amorai-MoriyaIgal M. BrenerLeonard C. Feldman
    • Netzer Amorai-MoriyaIgal M. BrenerLeonard C. Feldman
    • H01L21/302H01L21/3065H01L21/335H01L29/06H01L31/0328H01L31/0336H01L31/072
    • B82Y10/00H01L29/66469
    • A new method to fabricate strain patterns on a strained semiconductor structure, is disclosed. The method is based on the new concept of reverse side etching of a laterally homogeneous, strained structure so that strain changes can be induced in the front-side, pre-strained area as a result of the reverse side etching process. Semiconductor structures such as quantum-wires, quantum dots, and quantum well devices may be formed by the disclosed methods where the reverse side etching provides strain control of the material properties of the semiconductor structure without processing the front side which is generally the active and the most sensitive region of the semiconductor structure. Such semiconductor structures can be formed by a process including the steps of forming a strained layer on the front-side of the structure, and etching the reverse side of the substrate to form a pattern of strain into the front-side, thus forming selectively strained regions.
    • 公开了一种在应变半导体结构上制造应变图案的新方法。 该方法基于横向均匀的应变结构的逆向蚀刻的新概念,使得由于反向侧蚀刻工艺可以在前侧,预应变区域中引起应变变化。 半导体结构如量子线,量子点和量子阱器件可以通过所公开的方法形成,其中反向蚀刻提供对半导体结构的材料性质的应变控制,而不需要处理通常为有源的正面和 最敏感的半导体结构区域。 这种半导体结构可以通过以下步骤形成,该方法包括以下步骤:在结构的前侧形成应变层,并蚀刻基板的反面以在前侧形成应变图案,从而形成选择性应变 地区。