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1. 发明授权

US5268582A P-N junction devices with group IV element-doped group III-V compound semiconductors 失效
标题翻译：具有IV族元素掺杂III-V族化合物半导体的P-N结器件
公开(公告)号：US5268582A
公开(公告)日：1993-12-07
申请号：US934840
申请日：1992-06-24
申请人： Rose F. Kopf , Erdmann F. Schubert
发明人： Rose F. Kopf , Erdmann F. Schubert
IPC分类号： C30B29/68 , H01L21/20 , H01L21/203 , H01L21/338 , H01L29/15 , H01L29/207 , H01L29/778 , H01L29/80 , H01L29/812 , H01L29/861 , H01L31/10 , H01L29/161 , H01L29/205
CPC分类号： H01L29/861 , H01L29/155 , H01L29/207
摘要： This invention embodies p-n junction devices comprising Group III-V compound semiconductors in which the p or n or both p and n regions are formed by a superlattice selectively doped with an amphoteric Group IV element dopant selected from carbon, germanium and silicone. The superlattice includes a plurality of periods, each including two layers. Depending on the conductivity type, only one of the layers in the periods forming the superlattice region of said type of conductivity is selectively doped with said dopant, leaving the other layer in these periods undoped. The superlattice is formed by Molecular Beam Epitaxy technique, and the dopant is incorporated into respective layers by delta-doping as in a sheet centrally deposited between monolayers forming the respective layers of the period. Each period includes 5 to 15 monolayers deposited in the two layers in a numerical ratio corresponding to a cation compositional ratio in the compound semiconductor. Low growth temperatures, e.g. ranging from 410.degree. to 450.degree. C. lead to mirror-like surfaces. For a compound semiconductor Ga.sub.0.47 In.sub.0.53 As, the GaAs/InAs ordered superlattices with eight monolayers per period are grown in a ratio of 0.47/0.53. At free carrier concentrations of 10.sup.16 cm.sup. -3, carrier mobilities of 200 and 2300 cm.sup.2 /Vs for p-type and n-type are obtained with carbon as the amphoteric dopant.
摘要翻译：本发明体现了包含III-V族化合物半导体的p-n结器件，其中通过选择性掺杂有选自碳，锗和硅树脂的两性IV族元素掺杂剂的超晶格形成p或n或者p和n区。超晶格包括多个周期，每个周期包括两个层。根据导电类型，形成所述导电类型的超晶格区域的周期中只有一个层选择性地掺杂有所述掺杂剂，在这些时间段内不再掺杂另一层。超晶格是通过分子束外延技术形成的，并且掺杂剂通过δ-掺杂结合到相应的层中，如在中间沉积在形成该周期的各个层的单层之间的薄片中。每个周期包括以对应于化合物半导体中的阳离子组成比的数值比在两层中沉积的5至15个单层。低生长温度，例如范围从410°至450°C，导致镜面状。对于化合物半导体Ga 0.47 In 0.53As，以每个周期8个单层的GaAs / InAs有序超晶格以0.47 / 0.53的比例生长。在1016cm -3的自由载流子浓度下，以碳为两性掺杂剂获得p型和n型的载流子迁移率为200和2300cm2 / Vs。

2. 发明授权

US5226055A Devices having repetitive layers 失效
标题翻译：具有重复层的设备
公开(公告)号：US5226055A
公开(公告)日：1993-07-06
申请号：US767762
申请日：1991-09-30
申请人： Stephen W. Downey , Adrian B. Emerson , Rose F. Kopf , Erdmann F. Schubert
发明人： Stephen W. Downey , Adrian B. Emerson , Rose F. Kopf , Erdmann F. Schubert
IPC分类号： H01L21/314 , H01S5/00 , H01S5/028 , H01S5/125 , H01S5/183 , H01S5/30
CPC分类号： H01S5/18361 , H01S5/305 , H01S5/3054
摘要： It has been found that in the preparation of devices having repetitive layers, such as distributed Bragg reflectors, the dopant introduced during processing redistributes itself in a deleterious manner. In particular, this dopant through various effects segregates and diffuses from one layer into the interface region of the second layer. As a result, properties such as electrical resistance of the structure become unacceptably high. By utilizing various expedients such as carbon doping this segregation and its associated deleterious effects are avoided.

3. 发明授权

US5024967A Doping procedures for semiconductor devices 失效
标题翻译：半导体器件的掺杂程序
公开(公告)号：US5024967A
公开(公告)日：1991-06-18
申请号：US374336
申请日：1989-06-30
申请人： Rose F. Kopf , J. M. Kuo , Henry S. Luftman , Erdmann F. Schubert
发明人： Rose F. Kopf , J. M. Kuo , Henry S. Luftman , Erdmann F. Schubert
IPC分类号： H01L29/73 , H01L21/203 , H01L21/208 , H01L21/22 , H01L21/331 , H01L21/338 , H01L21/38 , H01L29/205 , H01L29/737 , H01L29/812 , H01L33/00 , H01S5/00 , H01S5/026
CPC分类号： H01L21/22 , H01L21/38 , Y10S148/041 , Y10S148/048 , Y10S148/071 , Y10S148/094 , Y10S438/925
摘要： A process is described for making semiconductor devices with highly controlled doping profiles. The process involves minimizing or eliminating segregation effects caused by surface electric fields created by Fermi-level pinning. These electric fields act on dopant ions and cause migration from the original deposition site of the doplant ions. Dopant ions are effectively shielded from the surface electric fields by illumination of the growth surfaces and by background doping. Also, certain crystallographic directions in certain semiconductors do not show Fermi-level pinning and lower growth temperatures retard or eliminate segregation effects. Devices are described which exhibit enhanced characteristics with highly accurate and other very narrow doping profiles.

4. 发明授权

US5115441A Vertical cavity surface emmitting lasers with transparent electrodes 失效
标题翻译：垂直腔表面发射具有透明电极的激光器
公开(公告)号：US5115441A
公开(公告)日：1992-05-19
申请号：US637245
申请日：1991-01-03
申请人： Rose F. Kopf , Henry M. O'Bryan, Jr. , Erdmann F. Schubert , Li-Wei Tu , Yeong-Her Wang , George J. Zydzik
发明人： Rose F. Kopf , Henry M. O'Bryan, Jr. , Erdmann F. Schubert , Li-Wei Tu , Yeong-Her Wang , George J. Zydzik
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183 , H01S5/187 , H01S5/20 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/18308 , H01S2301/18 , H01S5/0425 , H01S5/06216 , H01S5/2063 , H01S5/3432
摘要： Optically transparent and electrically conductive cadmium tin oxide or indium tin oxide is employed in vertical cavity surface emitting lasers for vertical current injection. Continuous wave lasing at room temperature is achieved in GaAs/AlGaAs quantum well lasers. Devices with a 10 .mu.m optical window which also serves as a vertical current injection inlet give lasing threshold currents as low as 3.8 mA. The differential series resistance is (350-450) .OMEGA. with a diode voltage of (5.1-5.6) V at the lasing threshold. Far field pattern of the laser emission is Gaussian-like with a full width at half maximum of 7.degree..

5. 发明授权

US5406194A Al.sub.x Ga.sub.1-x as probe for use in electro-optic sampling 失效
标题翻译： AlxGa1-x作为用于电光采样的探针
公开(公告)号：US5406194A
公开(公告)日：1995-04-11
申请号：US948059
申请日：1992-09-21
申请人： Douglas R. Dykaar , Ulrich D. Keil , Rose F. Kopf , Edward J. Laskowski , George J. Zydzik
发明人： Douglas R. Dykaar , Ulrich D. Keil , Rose F. Kopf , Edward J. Laskowski , George J. Zydzik
IPC分类号： G01J1/02 , G01R1/07 , G01R19/00 , H01L21/66 , G01R31/00
CPC分类号： G01R1/071
摘要： A new electro-optic sampling probe with femtosecond resolution suitable for ultra-fast electro-optic sampling. The new probe is several times thinner and has a dielectric constant four times less than the best reported conventional bulk LiTaO.sub.3 probes. In addition, the ultimate bandwidth is 50 percent greater than an equivalent LiTaO.sub.3 probe. The probe is a thin film of Al.sub.x Ga.sub.1-x As used in both total internally reflecting and free-standing geometries. Here x is chosen for sufficient transmission of the crystal to the wavelength of the laser source being used for electro-optic sampling. The thickness of the film is a small fraction of the thickness of prior art probes and is chosen, for speed and sensitivity of electro-optic sampling, to be thin compared to the spatial extent of the laser pulse. The thin film probe eliminates many of the problems associated with the use of bulk crystals as electro-optic sensors.
摘要翻译：具有飞秒分辨率的新型电光采样探头，适用于超高速电光采样。新型探头比较薄的介电常数比传统的大容量LiTaO3探头小4倍。此外，最终带宽比等效的LiTaO3探头大50％。探头是AlxGa1-xAs薄膜，用于全内反射和独立几何形状。这里选择x用于将晶体充分发送到用于电光采样的激光源的波长。薄膜的厚度是现有技术探头的厚度的一小部分，并且与激光脉冲的空间范围相比，选择与电光采样的速度和灵敏度相比较薄。薄膜探头消除了与使用散装晶体作为电光传感器相关的许多问题。

6. 发明授权

US5068868A Vertical cavity surface emitting lasers with electrically conducting mirrors 失效
标题翻译：带导电镜的垂直孔表面发射激光
公开(公告)号：US5068868A
公开(公告)日：1991-11-26
申请号：US526204
申请日：1990-05-21
申请人： Dennis G. Deppe , Leonard C. Feldman , Rose F. Kopf , Erdmann F. Schubert , Li Wei Tu , George J. Zydzik
发明人： Dennis G. Deppe , Leonard C. Feldman , Rose F. Kopf , Erdmann F. Schubert , Li Wei Tu , George J. Zydzik
IPC分类号： H01S5/00 , H01S5/042 , H01S5/183
CPC分类号： H01S5/18361 , H01S5/18375 , H01S5/18377 , H01S5/18394
摘要： This invention is a semiconductor vertical cavity surface emitting laser comprising a lasing cavity with an active layer, a bottom (rear) mirror and a top (front) mirror, and a front and rear electrodes for applying excitation current in direction substantially parallel to the direction of optical propagation. In accordance with this invention the front mirror comprises a thin, semitransparent metal layer which also acts as the front electrode. The metal layer is upon a highly doped layer forming a non-alloyed ohmic contact. The metal is selected from Ag and Al and is deposited in thickness ranging from 5 to 55 nm. The VCSEL is a semiconductor device wherein the semiconductor material is a III-V or II-VI compound semiconductor. For a VCSEL with GaAs active layer, the light output from the front metal mirror/electrode side yields a high external differential quantum efficiency as high as 54 percent. This is the highest quantum efficiency obtained in VCSEL structures. Quantum efficiencies on the oder of 10 to 30 percent are typical for prior art VCSEL structures. The VCSEL is suitable for fabrication utilizing planar technology.

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