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1. 发明申请

WO2003055014A3 SEMICONDUCTOR SATURABLE ABSORBER MIRROR DEVICE 审中-公开
公开(公告)号：WO2003055014A3
公开(公告)日：2003-07-03
申请号：PCT/CH2002/000680
申请日：2002-12-10
申请人： GIGA TERA AG , WEINGARTEN, Kurt , SPÜHLER, Gabriel, J. , KELLER, Ursula , KRAINER, Lukas
发明人： WEINGARTEN, Kurt , SPÜHLER, Gabriel, J. , KELLER, Ursula , KRAINER, Lukas
IPC分类号： H01S3/098
摘要： According to this invention, a "low field enhancement" (LFR) semiconductor saturable absorber device design is proposed. In this design, the structure is changed with respect to the prior art such that it no longer satisfies the anti-resonant condition but a resonant condition. Consequently the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the latter. According to one embodiment, the absorber device is a saturably absorbing semiconductor mirror device. In contrast with mirror devices according to the state of the art, a structure comprising the absorber and being placed on top of a Bragg reflector is provided which essentially fulfills a resonance condition, i.e. a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.

2. 发明申请

WO2003028177A1 PULSE-GENERATING LASER 审中-公开
标题翻译：脉冲发生激光
公开(公告)号：WO2003028177A1
公开(公告)日：2003-04-03
申请号：PCT/CH2002/000534
申请日：2002-09-24
申请人： GIGA TERA AG , KRAINER, Lukas , SPÜHLER, Gabriel, J. , PASCHOTTA, Rüdiger , WEINGARTEN, Kurt , KELLER, Ursula
发明人： KRAINER, Lukas , SPÜHLER, Gabriel, J. , PASCHOTTA, Rüdiger , WEINGARTEN, Kurt , KELLER, Ursula
IPC分类号： H01S3/098
CPC分类号： H01S3/1118 , H01S3/0604 , H01S3/0815 , H01S3/1307 , H01S3/1608 , H01S3/1618 , H01S3/17 , H01S2302/00
摘要： An optically pumped laser with an Er:Yb: doped solid state gain element (2) is disclosed, which is passively mode-locked by means of a saturable absorber mirror (4). The laser is designed to operate at a fundamental repetition rate exceeding 1 GHz and preferably at an effective wavelength between 1525 nm and 1570 nm. Compared to state of the art solid state pulsed lasers, the threshold for Q-switched-mode-locked operation is substantially improved. Thus, according to one embodiment, the laser achieves a repetition rate beyond 40 GHz. The laser preferably comprises means for wavelength tuning and repetition rate locking.
摘要翻译：公开了一种具有Er：Yb：掺杂固体增益元件（2）的光学泵浦激光器，其通过可饱和吸收镜（4）被动锁模。激光器被设计为以超过1GHz的基本重复频率操作，优选地在1525nm和1570nm之间的有效波长下操作。与现有技术的固态脉冲激光器相比，Q开关锁定操作的阈值显着提高。因此，根据一个实施例，激光器实现超过40GHz的重复率。激光器优选地包括用于波长调谐和重复率锁定的装置。

3. 发明公开

EP1456916A2 SEMICONDUCTOR SATURABLE ABSORBER MIRROR DEVICE 有权转让
标题翻译： HALBLEITERSÄTTIGBARENABSORBIERENDE SPIEGEL
公开(公告)号：EP1456916A2
公开(公告)日：2004-09-15
申请号：EP02781045.6
申请日：2002-12-10
申请人： Giga Tera AG
发明人： WEINGARTEN, Kurt , SPÜHLER, Gabriel, J. , KELLER, Ursula , KRAINER, Lukas
IPC分类号： H01S3/098 , H01S5/065
CPC分类号： H01S3/1118 , G02F1/3523
摘要： According to this invention, a 'low field enhancement' (LFR) semiconductor saturable absorber device design is proposed. In this design, the structure is changed with respect to the prior art such that it no longer satisfies the anti-resonant condition but a resonant condition. Consequently the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the latter. According to one embodiment, the absorber device is a saturably absorbing semiconductor mirror device. In contrast with mirror devices according to the state of the art, a structure comprising the absorber and being placed on top of a Bragg reflector is provided which essentially fulfills a resonance condition, i.e. a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.
摘要翻译： “低场增强”（LFR）半导体可饱和吸收器件设计，其结构被改变以使其具有谐振条件。因此，间隔层中的场强显着更高，导致更小的饱和注量和更高的调制深度。然而，间隔层中的场仍然低于自由空间场，或仅与自由空间中的场相比适度增强。根据一个实施例，吸收器件是半导体可饱和吸收镜（SESAM）装置。与根据现有技术的SESAM相比，提供了包括吸收体并放置在布拉格反射器顶部的结构，其基本上实现了结构中存在静止电磁波的共振条件。换句话说，设计使得场强达到设备表面附近的局部最大值。

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