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1. 发明申请

WO2003028177A1 PULSE-GENERATING LASER 审中-公开
标题翻译：脉冲发生激光
公开(公告)号：WO2003028177A1
公开(公告)日：2003-04-03
申请号：PCT/CH2002/000534
申请日：2002-09-24
申请人： GIGA TERA AG , KRAINER, Lukas , SPÜHLER, Gabriel, J. , PASCHOTTA, Rüdiger , WEINGARTEN, Kurt , KELLER, Ursula
发明人： KRAINER, Lukas , SPÜHLER, Gabriel, J. , PASCHOTTA, Rüdiger , WEINGARTEN, Kurt , KELLER, Ursula
IPC分类号： H01S3/098
CPC分类号： H01S3/1118 , H01S3/0604 , H01S3/0815 , H01S3/1307 , H01S3/1608 , H01S3/1618 , H01S3/17 , H01S2302/00
摘要： An optically pumped laser with an Er:Yb: doped solid state gain element (2) is disclosed, which is passively mode-locked by means of a saturable absorber mirror (4). The laser is designed to operate at a fundamental repetition rate exceeding 1 GHz and preferably at an effective wavelength between 1525 nm and 1570 nm. Compared to state of the art solid state pulsed lasers, the threshold for Q-switched-mode-locked operation is substantially improved. Thus, according to one embodiment, the laser achieves a repetition rate beyond 40 GHz. The laser preferably comprises means for wavelength tuning and repetition rate locking.
摘要翻译：公开了一种具有Er：Yb：掺杂固体增益元件（2）的光学泵浦激光器，其通过可饱和吸收镜（4）被动锁模。激光器被设计为以超过1GHz的基本重复频率操作，优选地在1525nm和1570nm之间的有效波长下操作。与现有技术的固态脉冲激光器相比，Q开关锁定操作的阈值显着提高。因此，根据一个实施例，激光器实现超过40GHz的重复率。激光器优选地包括用于波长调谐和重复率锁定的装置。

2. 发明申请

WO2003055014A3 SEMICONDUCTOR SATURABLE ABSORBER MIRROR DEVICE 审中-公开
公开(公告)号：WO2003055014A3
公开(公告)日：2003-07-03
申请号：PCT/CH2002/000680
申请日：2002-12-10
申请人： GIGA TERA AG , WEINGARTEN, Kurt , SPÜHLER, Gabriel, J. , KELLER, Ursula , KRAINER, Lukas
发明人： WEINGARTEN, Kurt , SPÜHLER, Gabriel, J. , KELLER, Ursula , KRAINER, Lukas
IPC分类号： H01S3/098
摘要： According to this invention, a "low field enhancement" (LFR) semiconductor saturable absorber device design is proposed. In this design, the structure is changed with respect to the prior art such that it no longer satisfies the anti-resonant condition but a resonant condition. Consequently the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the latter. According to one embodiment, the absorber device is a saturably absorbing semiconductor mirror device. In contrast with mirror devices according to the state of the art, a structure comprising the absorber and being placed on top of a Bragg reflector is provided which essentially fulfills a resonance condition, i.e. a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.

3. 发明申请

WO03055014A2 SEMICONDUCTOR SATURABLE ABSORBER MIRROR DEVICE 审中-公开
标题翻译：半导体可饱和吸收器镜像器件
公开(公告)号：WO03055014A2
公开(公告)日：2003-07-03
申请号：PCT/CH0200680
申请日：2002-12-10
申请人： GIGA TERA AG , WEINGARTEN KURT , SPUEHLER GABRIEL J , KELLER URSULA , KRAINER LUKAS
发明人： WEINGARTEN KURT , SPUEHLER GABRIEL J , KELLER URSULA , KRAINER LUKAS
IPC分类号： G02F1/35 , H01S3/098 , H01S3/00
CPC分类号： H01S3/1118 , G02F1/3523
摘要： According to this invention, a "low field enhancement" (LFR) semiconductor saturable absorber device design is proposed. In this design, the structure is changed with respect to the prior art such that it no longer satisfies the anti-resonant condition but a resonant condition. Consequently the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the latter. According to one embodiment, the absorber device is a saturably absorbing semiconductor mirror device. In contrast with mirror devices according to the state of the art, a structure comprising the absorber and being placed on top of a Bragg reflector is provided which essentially fulfills a resonance condition, i.e. a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.
摘要翻译：根据本发明，提出了一种“低场增强”（LFR）半导体可饱和吸收体设计。在该设计中，结构相对于现有技术改变，使得其不再满足反谐振条件而是满足谐振条件。因此，间隔层中的场强显着更高，导致更小的饱和注量和更高的调制深度。然而，间隔层中的场仍然低于自由空间场，或仅与后者相比稍微增强。根据一个实施例，吸收装置是可饱和吸收半导体镜装置。与根据现有技术的反射镜装置相比，提供了包括吸收体并放置在布拉格反射器顶部的结构，其基本上实现谐振条件，即在结构中存在静止的电磁波。换句话说，设计使得场强在器件表面附近达到局部最大值。

4. 发明专利

AU5840100A High-repetition-rate passively mode-locked solid-state laser 未知
公开(公告)号：AU5840100A
公开(公告)日：2002-02-13
申请号：AU5840100
申请日：2000-07-27
申请人： GIGA TERA AG
发明人： WEINGARTEN KURT J , KRAINER LUKAS , KELLER URSULA , PASCHOTTA RUDIGER
IPC分类号： H01S3/098 , H01S3/106 , H01S3/108 , H01S3/16

5. 发明专利

AU2994401A Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser 未知
公开(公告)号：AU2994401A
公开(公告)日：2001-08-20
申请号：AU2994401
申请日：2001-02-09
申请人： GIGA TERA AG
发明人： PASCHOTTA RUDIGER , HARING RETO , KELLER URSULA
IPC分类号： H01S5/04 , H01S5/06 , H01S5/065 , H01S5/14 , H01S5/183 , H01S5/18
摘要： A passively mode-locked optically pumped semiconductor vertical-external-cavity surface-emitting laser (OPS-EXSEL) is disclosed. The laser is mode locked by a semiconductor saturable absorber mirror (SESAM) which forms part of an external cavity. Both the beam-quality limitations of edge-emitting lasers, and the power restrictions of electrically pumped surface-emitting lasers are overcome. The laser uses a semiconductor wafer in which a stack of quantum wells is grown adjacent to a single Bragg-mirror structure. Light from one or more multi-mode high-power diode lasers is focused onto the face of the wafer and pumps the wells by absorption in the barrier regions. The area of the laser mode on the active mirror can be about 10 times larger than the mode area on the facet of an edge-emitting laser, offering scope for the generation of high average power and large pulse energy. At the same time the external cavity enforces fundamental mode operation in a circular, near-diffraction-limited beam. With the laser, sub-picosecond pulse durations are achievable by eliminating coupled cavity effects and by external pulse compression. Band-gap engineering can be used to shape the pulses, or even integrate gain and saturable absorption within the same wafer. Thus, rugged, efficient pulsed laser sources with high average power in a nearly diffraction-limited beam, sub-picosecond pulse durations and multi-GHz repetition rates, which operate in a broad range of wavelengths accessible by bandgap engineering are made possible.

6. 发明专利

AU3070500A High-repetition rate passively mode-locked solid-state laser 未知
公开(公告)号：AU3070500A
公开(公告)日：2000-08-18
申请号：AU3070500
申请日：2000-01-28
申请人： GIGA TERA AG
发明人： WEINGARTEN KURT J , KOPF DANIEL
IPC分类号： H01S3/098 , H01S3/113
摘要： A passively mode-locked solid-state laser is designed to emit a continuous-wave train ( 51, 52 ) of electromagnetic-radiation pulses, the fundamental repetition rate of the emitted pulses exceeding 1 GHz, without Q-switching instabilities. The laser includes an optical resonator ( 3.1 ), a solid-state laser gain element ( 2 ) placed inside the optical resonator ( 3.1 ), a device ( 1 ) for exciting said laser gain element ( 2 ) to emit electromagnetic radiation having the effective wavelength, and a device ( 4 ) for passive mode locking including a saturable absorber. The laser gain element ( 2 ) is a laser material with a stimulated emission cross section exceeding 0.8x10 -18 cm 2 at the effective wavelength, and is made of Nd:vanadate. The saturable absorber ( 4 ) is preferably a semiconductor saturable absorber mirror (SESAM) device. Even higher repetition rates are achieved by operating the laser in the soliton regime. For use in fiber-optical telecommunication, the laser wavelength is preferably shifted to 1.5 mum by use of an optical parametric oscillator. The laser is simple, robust, compact, efficient, and low-cost. It generates a relatively large average power of 100 mW and higher, which is useful for a number of optical probing and detection applications, in a beam ( 51, 52 ) that is substantially a fundamental spatial mode.

7. 发明专利

AU2002349251A8 Semiconductor saturable absorber mirror device 未知
公开(公告)号：AU2002349251A8
公开(公告)日：2003-07-09
申请号：AU2002349251
申请日：2002-12-10
申请人： GIGA TERA AG
发明人： KELLER URSULA , WEINGARTEN KURT , SPUHLER GABRIEL J , KRAINER LUKAS
IPC分类号： G02F1/35 , H01S3/098 , H01S5/065
摘要： A "low field enhancement" (LFR) semiconductor saturable absorber device design in which the structure is changed such that it has a resonant condition. Consequently, the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the field in the free space. According to one embodiment, the absorber device is a Semiconductor Saturable Absorber Mirror (SESAM) device. In contrast with SESAMs according to the state of the art, a structure including the absorber and being placed on top of a Bragg reflector is provided, which essentially fulfills a resonance condition whereby a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.

8. 发明专利

AU2002349251A1 SEMICONDUCTOR SATURABLE ABSORBER MIRROR DEVICE 未知
公开(公告)号：AU2002349251A1
公开(公告)日：2003-07-09
申请号：AU2002349251
申请日：2002-12-10
申请人： GIGA TERA AG
发明人： WEINGARTEN KURT , SPUHLER GABRIEL J , KELLER URSULA , KRAINER LUKAS
IPC分类号： G02F1/35 , H01S3/098 , H01S3/00
摘要： A "low field enhancement" (LFR) semiconductor saturable absorber device design in which the structure is changed such that it has a resonant condition. Consequently, the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the field in the free space. According to one embodiment, the absorber device is a Semiconductor Saturable Absorber Mirror (SESAM) device. In contrast with SESAMs according to the state of the art, a structure including the absorber and being placed on top of a Bragg reflector is provided, which essentially fulfills a resonance condition whereby a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.

9. 发明公开

EP1456916A2 SEMICONDUCTOR SATURABLE ABSORBER MIRROR DEVICE 有权转让
标题翻译： HALBLEITERSÄTTIGBARENABSORBIERENDE SPIEGEL
公开(公告)号：EP1456916A2
公开(公告)日：2004-09-15
申请号：EP02781045.6
申请日：2002-12-10
申请人： Giga Tera AG
发明人： WEINGARTEN, Kurt , SPÜHLER, Gabriel, J. , KELLER, Ursula , KRAINER, Lukas
IPC分类号： H01S3/098 , H01S5/065
CPC分类号： H01S3/1118 , G02F1/3523
摘要： According to this invention, a 'low field enhancement' (LFR) semiconductor saturable absorber device design is proposed. In this design, the structure is changed with respect to the prior art such that it no longer satisfies the anti-resonant condition but a resonant condition. Consequently the field strength is substantially higher in the spacer layer, resulting in a smaller saturation fluence and in a higher modulation depth. However, the field in the spacer layer is still lower than the free space field or only moderately enhanced compared to the latter. According to one embodiment, the absorber device is a saturably absorbing semiconductor mirror device. In contrast with mirror devices according to the state of the art, a structure comprising the absorber and being placed on top of a Bragg reflector is provided which essentially fulfills a resonance condition, i.e. a standing electromagnetic wave is present in the structure. In other words, the design is such that the field intensity reaches a local maximum in the vicinity of the device surface.
摘要翻译： “低场增强”（LFR）半导体可饱和吸收器件设计，其结构被改变以使其具有谐振条件。因此，间隔层中的场强显着更高，导致更小的饱和注量和更高的调制深度。然而，间隔层中的场仍然低于自由空间场，或仅与自由空间中的场相比适度增强。根据一个实施例，吸收器件是半导体可饱和吸收镜（SESAM）装置。与根据现有技术的SESAM相比，提供了包括吸收体并放置在布拉格反射器顶部的结构，其基本上实现了结构中存在静止电磁波的共振条件。换句话说，设计使得场强达到设备表面附近的局部最大值。

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