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    • 2. 发明授权
    • Fuse programmable I/O organization
    • 保险丝可编程I / O组织
    • US06707746B2
    • 2004-03-16
    • US10210628
    • 2002-07-31
    • Gerd FrankowskyBarbara Vasquez
    • Gerd FrankowskyBarbara Vasquez
    • G11C700
    • G11C7/1045G11C2207/105G11C2207/2254
    • Circuitry using fuse and anti-fuse latches (62) for selecting the number of input/output channels (98, 109) after encapsulation is disclosed. The various embodiments allow conventional bond pads (14, 16, 18) to be used for initial selection of the number of input/output channels prior to encapsulation. However, by providing different selection signals (52, 54), the number of input/output channels may be changed by the user at any time after encapsulation. Other embodiments employ “enable” latch circuits (133,135) allow the initial selection by the users at any time after encapsulation, and then at least one more subsequent selection.
    • 公开了使用熔断器和反熔丝锁存器(62)进行封装后选择输入/输出通道数(98,109)的电路。 各种实施例允许传统的接合焊盘(14,16,18)用于在封装之前的输入/输出通道的数量的初始选择。 然而,通过提供不同的选择信号(52,54),输入/输出通道的数量可以由用户在封装之后的任何时间改变。 其他实施例使用“使能”锁存电路(133,135)允许用户在封装之后的任何时间进行初始选择,然后进行至少一个以后的选择。
    • 6. 发明申请
    • Integrated circuit, test system and method for reading out an error datum from the integrated circuit
    • 集成电路,测试系统和从集成电路读出误差基准的方法
    • US20060262614A1
    • 2006-11-23
    • US11415443
    • 2006-05-01
    • Gerd Frankowsky
    • Gerd Frankowsky
    • G11C29/00
    • G11C29/26G11C2029/2602
    • An integrated circuit is provided, the integrated circuit having a test circuit for reading out an error datum from the integrated circuit in accordance with a test mode, wherein the error datum is output via a first and a second data output, and wherein an address and a read command are applied to the integrated circuit to read out the error datum associated with the address via one of the data outputs. The test circuit is configured in such a manner that, when a first read command is applied, the test circuit outputs the error datum at the first data output and switches the second data output to high impedance and, when a second read command is applied, the test circuit outputs the error datum at the second data output and switches the first data output to high impedance.
    • 提供了一种集成电路,该集成电路具有用于根据测试模式从集成电路读出错误数据的测试电路,其中该误差数据经由第一和第二数据输出被输出,并且其中一个地址和 读取命令被应用于集成电路,以通过数据输出之一读出与地址相关联的错误数据。 测试电路被配置成使得当应用第一读取命令时,测试电路在第一数据输出处输出误差数据并将第二数据输出切换为高阻抗,并且当应用第二读取命令时, 测试电路在第二个数据输出端输出误差数据,并将第一个数据输出切换到高阻抗。
    • 7. 发明申请
    • Test system for testing integrated chips and an adapter element for a test system
    • 用于测试集成芯片的测试系统和用于测试系统的适配器元件
    • US20050017748A1
    • 2005-01-27
    • US10865050
    • 2004-06-10
    • Frank WeberGerd Frankowsky
    • Frank WeberGerd Frankowsky
    • G01R31/28G01R31/26
    • G01R31/2863G01R31/2889
    • Test system for testing integrated chips and an adapter element for a test system. One embodiment provides a test system for testing integrated chips in a burn-in test operation, the integrated chips to be tested being arranged in groups on a burn-in board, the burn-in board having a first connecting device in order to connect the burn-in board to a tester device, the tester device comprising a test module with a test circuit in order to test chips on the burn-in board in accordance with the burn-in test operation, the test module having a second connecting device in order to connect the burn-in board to the test module via the second connecting device, a plurality of test modules being provided, the second connecting devices of which can be contact-connected to a plurality of third connecting devices of an adapter element, the adapter element having a fourth connecting device for contact-connection of the first connecting device of the burn-in board, the third connecting devices of the adapter element being connected to the fourth connecting device in such a way that, in the contact-connected state, it is possible to test each integrated circuit of a group with one of the test modules.
    • 用于测试集成芯片的测试系统和用于测试系统的适配器元件。 一个实施例提供了一种用于在老化测试操作中测试集成芯片的测试系统,待测试的集成芯片分组放置在老化板上,该老化板具有第一连接设备,以便连接 所述测试装置包括具有测试电路的测试模块,以便根据所述老化测试操作在所述老化板上测试芯片,所述测试模块具有第二连接装置, 为了通过第二连接装置将老化板连接到测试模块,提供了多个测试模块,其中第二连接装置可以与适配器元件的多个第三连接装置接触连接, 适配器元件具有用于接合连接老化板的第一连接装置的第四连接装置,适配器元件的第三连接装置以这样的方式连接到第四连接装置 在接触连接状态下,可以用一个测试模块来测试组中的每个集成电路。
    • 8. 发明授权
    • On chip programmable data pattern generator for semiconductor memories
    • 用于半导体存储器的片上可编程数据模式发生器
    • US06651203B1
    • 2003-11-18
    • US09312974
    • 1999-05-17
    • Gerd Frankowsky
    • Gerd Frankowsky
    • G01R3128
    • G11C29/36G06F11/2635
    • A semiconductor memory chip in accordance with the present invention includes a first memory array to be tested including a plurality of memory cells arranged in rows and columns, the memory cells being accessed to read and write data thereto by employing bitlines and wordlines, the data provided on input/output pins, and a pattern generator formed on the memory chip. The pattern generator further includes a programmable memory array including a plurality of memory banks, the memory banks having memory cells arranged in rows and columns, each bank being capable of storing data for a pattern to be generated for each of the input/output pins of the first memory array. An addressing circuit for accessing the data stored in the programmable memory array to address individual data to be transmitted to and from the first memory array is included.
    • 根据本发明的半导体存储器芯片包括待测试的第一存储器阵列,其包括以行和列排列的多个存储单元,存储单元通过采用位线和字线被访问以读取和写入数据,所提供的数据 在输入/输出引脚上,以及形成在存储芯片上的图形发生器。 图案生成器还包括包括多个存储体的可编程存储器阵列,存储体具有以行和列排列的存储单元,每个存储体能够存储要为每个输入/输出引脚产生的模式的数据 第一个存储器阵列。 包括用于访问存储在可编程存储器阵列中的数据以寻址要发送到第一存储器阵列和从第一存储器阵列传送的各个数据的寻址电路。
    • 9. 发明授权
    • Dynamic memory refresh circuitry
    • 动态内存刷新电路
    • US06603694B1
    • 2003-08-05
    • US10068789
    • 2002-02-05
    • Gerd FrankowskyGunther Lehmann
    • Gerd FrankowskyGunther Lehmann
    • G11C700
    • G11C11/406
    • A circuit for refreshing data stored in an array of dynamic memory cells is provided. The circuit includes an integrated circuit chip. The chip has the array of memory cells formed thereon. The circuit also includes a refresh rate analysis circuit for determining data retention times in each one of the memory cells and from such determination refresh address modification signals. Also provided is a refresh address generator formed on the chip and fed by refresh command signals generated externally of the chip and by the address modification signals. The refresh address generator supplies an internal refresh commands along with refresh addresses to the array of memory cells. The cells have data stored therein refreshed in response to such internal refresh commands. The refresh rate analysis circuit determines cells in the array having data retention times less than a predetermined value.
    • 提供了用于刷新存储在动态存储单元阵列中的数据的电路。 该电路包括集成电路芯片。 芯片具有形成在其上的存储单元阵列。 该电路还包括用于确定每个存储器单元中的数据保持时间的刷新率分析电路,以及这些确定刷新地址修改信号。 还提供了一种刷新地址生成器,其形成在芯片上并由芯片外部产生的刷新命令信号和地址修改信号馈送。 刷新地址生成器向内存单元阵列提供内部刷新命令以及刷新地址。 小区具有响应于这种内部刷新命令刷新的数据。 刷新率分析电路确定具有小于预定值的数据保留时间的阵列中的单元。