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    • 1. 发明授权
    • Transferred electron effective mass modulator
    • 转移电子有效质量调制器
    • US5067828A
    • 1991-11-26
    • US565292
    • 1990-08-09
    • Gerard J. SullivanKenneth D. PedrottiHerbert Kroemer
    • Gerard J. SullivanKenneth D. PedrottiHerbert Kroemer
    • G02F1/015G02F1/017
    • B82Y20/00G02F1/01708G02F1/01716G02F2001/0151
    • An optical modulator having a waveguide region comprising first and second layers of material having differing effective masses for free charge carriers at a predefined band edge energy disposed immediately adjacent to each other and covered by a lower refractive index cladding. A preferred embodiment employs a semiconductor system such as Al.sub.y Ga.sub.1-y As for the first and second material layers with the value of y adjusted between the layers so that the conduction band edge energies of the direct band in one layer is about the same as that of the indirect condition band in the other layer. A mechanism is provided for moving charge carriers between the first and second layers, such as metal contacts and a power source for applying electrical fields to the waveguide structure in a desired modulation pattern. The material layers may be deposited as a series of quantum wells with limited disordering or a ridge structure used to obtain lateral confinement. In addition, the optical modulator can comprise a photodetector or a second control waveguide positioned adjacent to the waveguide region and electrically connected to the waveguide to alter electrical fields applied to the waveguide in response to optical signals.
    • 一种光调制器,其具有波导区域,该波导区域包括第一和第二材料层,其在预定的带边缘能量处具有不同的有效质量,该预定带边缘能量彼此紧邻地设置并被较低折射率包层覆盖。 一个优选实施例采用诸如AlyGa1-yAs的半导体系统用于第一和第二材料层,其中y的值在层之间调整,使得一层中的直接带的导带边缘能量大致与 间接条件带在另一层。 提供了用于在第一和第二层之间移动载流子的机构,例如金属触点和用于以期望的调制模式向波导结构施加电场的电源。 材料层可以沉积为一系列量子阱,其具有有限的紊乱或用于获得侧向约束的脊结构。 此外,光学调制器可以包括光电检测器或与波导区域相邻并且电连接到波导的第二控制波导,以响应于光学信号改变施加到波导的电场。
    • 3. 发明授权
    • Method for growing tilted superlattices
    • 生长倾斜超晶格的方法
    • US5013683A
    • 1991-05-07
    • US300266
    • 1989-01-23
    • Pierre M. PetroffHerbert Kroemer
    • Pierre M. PetroffHerbert Kroemer
    • H01L21/20H01L21/203H01L21/337H01L29/15
    • B82Y10/00H01L21/02395H01L21/02433H01L21/02463H01L21/0262H01L21/02631H01L21/02658H01L29/151H01L29/158H01L29/66924Y10S117/902Y10S148/025Y10S148/097Y10S148/16Y10S148/169Y10S438/962
    • A method for growing a superlattice structure on a substrate. First, a periodic array of monoatomic surface steps are created on the surface of the substrate at an area to have the superlattice structure grown thereon. There is apparatus for creating a beam of a material being input thereto and for selectively including or not including respective ones of a plurality of materials within the beam. The beam is directed at the steps of the substrate. Finally, logic causes control apparatus to include and not include respective ones of the materials within the beam in a pre-established pattern of time periods which will cause the materials to be deposited on the steps in a series of stacked monolayers. Tilted Superlattices (TSLs) and Coherent Tilted Superlattices (CTSLs) are created. The method can create pseudo ternary semiconductor alloys as part of a CTSL by employing at least two binary compound semiconductor alloys in the deposition process. It can also create a quantum wire superlattice by sandwiching a thin CTSL layer between two wider band gap layers. Additionally, it can create a tilted superlattice with zero misfit strain by using three binary compounds to produce a pseudo-ternary compound in a direction parallel to the substrate normal while the tilted superlattice structure provides a desired band gap in a direction parallel to the substrate surface. One may form the CTSL as part of a field effect transistor (FET) wherein the CTSL is part of the FET gate or form the CTSL as the cladding layers of a quantum wire laser having a GaAs active layer.
    • 一种在衬底上生长超晶格结构的方法。 首先,在衬底的表面上在其上生长超晶格结构的区域上产生单原子表面台阶的周期性阵列。 存在用于产生输入到其中的材料束的设备,并且用于选择性地包括或不包括在梁内的多个材料中的相应材料。 光束指向基板的台阶。 最后,逻辑使得控制装置包括并且不包括预先建立的时间段模式中的束内的材料中的相应材料,这将使材料沉积在一系列堆叠单层中的台阶上。 创建了倾斜超晶格(TSL)和相干倾斜超晶格(CTSL)。 该方法可以通过在沉积工艺中采用至少两种二元化合物半导体合金来制造伪三元半导体合金作为CTSL的一部分。 它还可以通过在两个较宽的带隙层之间夹入薄的CTSL层来产生量子线超晶格。 另外,它可以通过使用三种二元化合物在平行于衬底法线的方向上产生伪三元化合物而产生具有零失配应变的倾斜超晶格,同时倾斜超晶格结构在平行于衬底表面的方向上提供期望的带隙 。 可以将CTSL形成为场效应晶体管(FET)的一部分,其中CTSL是FET栅极的一部分或形成CTSL作为具有GaAs活性层的量子线激光器的包层。