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1. 发明授权

US06870201B1 High voltage resistant edge structure for semiconductor components 有权
标题翻译：半导体元件耐高压边缘结构
公开(公告)号：US06870201B1
公开(公告)日：2005-03-22
申请号：US09530553
申请日：1998-11-02
申请人： Gerald Deboy , Jenoe Tihanyi , Helmut Strack , Helmut Gassel , Jens-Peer Stengl , Hans Weber
发明人： Gerald Deboy , Jenoe Tihanyi , Helmut Strack , Helmut Gassel , Jens-Peer Stengl , Hans Weber
IPC分类号： H01L29/06 , H01L29/417 , H01L29/739 , H01L29/78 , H01L29/74
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/41766 , H01L29/7395 , H01L29/7396 , H01L29/7802
摘要： The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones of the second conductivity type which are arranged between the floating guard rings, wherein the conductivities and/or the inter-ring zones are set such that their charge carriers are totally depleted when blocking voltage is applied. The inventive edge structure achieves a modulation of the electrical field both at the surface and in the volume of the semiconductor body. If the inventive edge structure is suitably dimensioned, the field intensity maximum can easily be situated in the depth; that is, in the region of the vertical p-n junction. Thus, a suitable edge construction which permits a “soft” leakage of the electrical field in the volume can always be provided over a wide range of concentrations of p and n doping.
摘要翻译：本发明涉及一种半导体元件的边缘区域中的耐高压边缘结构，其具有布置在浮动保护环之间的第一导电类型的浮动保护环和第二导电类型的环形区，其中电导率和/或环形区域被设置为使得当施加阻断电压时它们的电荷载流子完全耗尽。本发明的边缘结构在半导体本体的表面和体积上实现了电场的调制。如果本发明的边缘结构适当地确定尺寸，则场强度最大值可以容易地位于深度中; 也就是在垂直p-n结的区域。因此，允许在体积中的电场的“软”泄漏的合适的边缘构造总是可以在宽泛的p和n掺杂浓度范围内提供。

2. 发明授权

US06812524B2 Field effect controlled semiconductor component 有权
标题翻译：场效应控制半导体元件
公开(公告)号：US06812524B2
公开(公告)日：2004-11-02
申请号：US10013999
申请日：2001-12-11
申请人： Dirk Ahlers , Jens-Peer Stengl , Jenoe Tihanyi , Hans Weber , Gerald Deboy , Helmut Strack , Armin Willmeroth
发明人： Dirk Ahlers , Jens-Peer Stengl , Jenoe Tihanyi , Hans Weber , Gerald Deboy , Helmut Strack , Armin Willmeroth
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/1095 , H01L29/41766 , H01L29/7816
摘要： A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a compensation zone. The compensation zone has a complementary conduction type with respect to the drift zone and includes at least two segments. A distance between the two adjacent segments is chosen such that the punch-through voltage between these segments lies in a voltage range that corresponds to the voltage range assumed by the voltage drop across the drift path at currents situated between the rated current and twice the rated current.
摘要翻译：半导体部件包括形成在半导体本体中的第一和第二连接区域，围绕半导体主体中的第二连接区域的沟道区域以及形成在沟道区域和第一连接区域之间并且包含补偿区域的漂移路径。补偿区相对于漂移区具有互补导电类型并且包括至少两个段。选择两个相邻段之间的距离，使得这些段之间的穿通电压位于对应于位于额定电流和额定电流两倍之间的电流处的漂移路径上的电压降所假定的电压范围的电压范围当前。

3. 发明授权

US06831327B2 Vertically structured power semiconductor component 有权
标题翻译：垂直结构的功率半导体元件
公开(公告)号：US06831327B2
公开(公告)日：2004-12-14
申请号：US09838743
申请日：2001-04-19
申请人： Gerald Deboy , Jens-Peer Stengl , Hans Weber , Armin Willmeroth
发明人： Gerald Deboy , Jens-Peer Stengl , Hans Weber , Armin Willmeroth
IPC分类号： H01L2994
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0634 , H01L29/0847 , H01L29/0878 , H01L29/402 , H01L29/7395 , H01L29/7811
摘要： A vertically structured semiconductor power component is described. A layer thickness of a substrate of the power module between a pn junction and a metallized back is chosen in such a manner that a space charge region produced in the semiconductor component extends as far as the back when a blocking voltage between a source and a drain electrode is applied before a field strength produced by the applied blocking voltage reaches a critical value.
摘要翻译：描述了垂直结构的半导体功率部件。选择在pn结和金属化反射层之间的功率模块的衬底的层厚度，使得当半导体组件中产生的空间电荷区域在源极和漏极之间的阻断电压在施加的阻挡电压产生的场强达到临界值之前施加电极。

4. 发明授权

US06630698B1 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06630698B1
公开(公告)日：2003-10-07
申请号：US09786022
申请日：2001-11-09
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Weber
IPC分类号： H01L2980
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7801 , H01L29/7802 , H01L29/7825
摘要： The invention relates to a high-voltage semiconductor component comprising semiconductor areas (4, 5) of alternating, different conductivity types which are arranged in a semiconductor body in an alternating manner. In the semiconductor body said semiconductor areas extend from at least one first zone (6) to near a second zone (1) and are variably doped so that the electric field increases progressively from one zone to the other (6, 1)
摘要翻译：本发明涉及一种高电压半导体元件，其包括以交替方式布置在半导体本体中的交替不同导电类型的半导体区域（4,5）。在半导体体中，所述半导体区域从至少一个第一区域（6）延伸到靠近第二区域（1）并且可变地掺杂，使得电场从一个区域逐渐增加到另一个区域（6,1）

5. 发明申请

US20130193525A1 Semiconductor Arrangement with Active Drift Zone 有权
公开(公告)号：US20130193525A1
公开(公告)日：2013-08-01
申请号：US13362038
申请日：2012-01-31
申请人： Rolf Weis , Gerald Deboy , Michael Treu , Armin Willmeroth , Hans Weber
发明人： Rolf Weis , Gerald Deboy , Michael Treu , Armin Willmeroth , Hans Weber
IPC分类号： H01L27/06
CPC分类号： H01L27/0207 , H01L21/84 , H01L21/845 , H01L27/06 , H01L27/0629 , H01L27/088 , H01L27/0886 , H01L27/1211 , H01L29/4236 , H01L29/78 , H03K17/063 , H03K17/102
摘要： A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. Each of the second semiconductor devices has at least one device characteristic. At least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices.

6. 发明授权

US08421196B2 Semiconductor device and manufacturing method 有权
标题翻译：半导体器件及制造方法
公开(公告)号：US08421196B2
公开(公告)日：2013-04-16
申请号：US12626425
申请日：2009-11-25
申请人： Hans Weber , Gerald Deboy
发明人： Hans Weber , Gerald Deboy
IPC分类号： H01L29/06 , H01L21/336
CPC分类号： H01L29/0611 , H01L21/20 , H01L29/0607 , H01L29/0634 , H01L29/0657 , H01L29/66348 , H01L29/7397
摘要： A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone.
摘要翻译：半导体器件包括形成在半导体本体内的第一导电类型的漂移区，其中漂移区的相对侧的一侧与半导体本体内的第一区相邻，而另一侧邻接半导体内的第二区。沿着与半导体主体的表面平行延伸的横向方向彼此相对地形成第一和第二区域中的第一导电类型不同于第一导电类型的第一半导体子区。第二半导体子区域形成在第一和第二区域的每一个中，并且沿着横向形成在第一半导体子区域之间。第二半导体子区域内的掺杂剂的平均浓度沿着垂直于表面的垂直方向的第二半导体子区域的延伸的10％至90％的平均浓度小于漂移区域内沿着相应的延伸部分的掺杂剂的平均浓度。

7. 发明授权

US07193293B2 Semiconductor component with a compensation layer, a depletion zone, and a complementary depletion zone, circuit configuration with the semiconductor component, and method of doping the compensation layer of the semiconductor component 有权
标题翻译：具有补偿层，耗尽区和互补耗尽区的半导体元件，具有半导体元件的电路配置，以及掺杂半导体元件的补偿层的方法
公开(公告)号：US07193293B2
公开(公告)日：2007-03-20
申请号：US10141834
申请日：2002-05-09
申请人： Hans Weber , Dirk Ahlers , Gerald Deboy
发明人： Hans Weber , Dirk Ahlers , Gerald Deboy
IPC分类号： H01L29/00
CPC分类号： H01L29/7816 , H01L21/26506 , H01L29/0634 , H01L29/167 , H01L29/66712 , H01L29/7802 , H01L2924/0002 , H03K17/08142 , H01L2924/00
摘要： A semiconductor component, which functions according to the principle of charge carrier compensation, has incompletely ionized dopants that are additionally provided in a semiconductor body of the semiconductor component. When a reverse voltage is applied, the degree of compensation changes as a function of time and the breakdown voltage of the semiconductor component increases in a manner governed by the degree of compensation. The invention furthermore relates to a circuit configuration and to a method for doping a compensation layer according to the invention.
摘要翻译：根据电荷载流子补偿的原理起作用的半导体元件具有不完全电离的掺杂物，其被附加地设置在半导体元件的半导体本体中。当施加反向电压时，补偿程度随着时间的推移而变化，半导体组件的击穿电压以补偿程度为基础的增加。本发明还涉及根据本发明的电路配置和掺杂补偿层的方法。

8. 发明授权

US06667514B2 Semiconductor component with a charge compensation structure and associated fabrication 有权
标题翻译：具有电荷补偿结构和相关制造的半导体元件
公开(公告)号：US06667514B2
公开(公告)日：2003-12-23
申请号：US10190119
申请日：2002-07-03
申请人： Dirk Ahlers , Gerald Deboy , Hans Weber , Armin Willmeroth
发明人： Dirk Ahlers , Gerald Deboy , Hans Weber , Armin Willmeroth
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/41766
摘要： A semiconductor component includes a charge compensation structure wherein locations with a maximum local field strength are positioned in a compensation edge region of the charge compensation structure. Thus, an electrical parameter such as the on resistance of the semiconductor component can be substantially improved without influencing or impairing further parameters such as the breakdown voltage and the robustness with respect to TRAPATT oscillations. Methods of fabricating a semiconductor component with a charge compensation structure are also provided.
摘要翻译：半导体部件包括电荷补偿结构，其中具有最大局部场强的位置位于电荷补偿结构的补偿边缘区域中。因此，可以显着地改善诸如半导体部件的导通电阻的电参数，而不影响或削弱诸如击穿电压和相对于TRAPATT振荡的鲁棒性的其它参数。还提供了制造具有电荷补偿结构的半导体部件的方法。

9. 发明申请

US20110121437A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD 有权
标题翻译：半导体器件和制造方法
公开(公告)号：US20110121437A1
公开(公告)日：2011-05-26
申请号：US12626425
申请日：2009-11-25
申请人： Hans Weber , Gerald Deboy
发明人： Hans Weber , Gerald Deboy
IPC分类号： H01L29/06 , H01L21/336 , H01L21/20
CPC分类号： H01L29/0611 , H01L21/20 , H01L29/0607 , H01L29/0634 , H01L29/0657 , H01L29/66348 , H01L29/7397
摘要： A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone.
摘要翻译：半导体器件包括形成在半导体本体内的第一导电类型的漂移区，其中漂移区的相对侧的一侧与半导体本体内的第一区相邻，而另一侧邻接半导体内的第二区。沿着与半导体主体的表面平行延伸的横向方向彼此相对地形成第一和第二区域中的第一导电类型不同于第一导电类型的第一半导体子区。第二半导体子区域形成在第一和第二区域的每一个中，并且沿着横向形成在第一半导体子区域之间。第二半导体子区域内的掺杂剂的平均浓度沿着垂直于表面的垂直方向沿着第二半导体子区域的延伸的10％至90％的平均浓度小于漂移区域内的相应延伸部分的掺杂剂的平均浓度。

10. 再颁专利

USRE40352E1 Switch mode power supply with reduced switching losses 有权
标题翻译：开关模式电源具有降低的开关损耗
公开(公告)号：USRE40352E1
公开(公告)日：2008-06-03
申请号：US10846998
申请日：2004-05-14
申请人： Gerald Deboy , Franz Hirler , Martin März , Hans Weber
发明人： Gerald Deboy , Franz Hirler , Martin März , Hans Weber
IPC分类号： H01L29/76
CPC分类号： H01L29/0847 , H01L29/0634 , H01L29/1095 , H01L29/7802 , H01L29/7816 , H03K17/08142
摘要： The invention relates to a switching transistor presenting reduced switching losses. In the switching transistor, output capacitance is very high when drain/source voltages are low. As the drain/source voltage increases, the capacitance falls to such low values that the energy stored in the transistor becomes very low.
摘要翻译：本发明涉及一种具有降低的开关损耗的开关晶体管。在开关晶体管中，当漏极/源极电压低时，输出电容非常高。随着漏极/源极电压的增加，电容降低到存储在晶体管中的能量变得非常低的低值。

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