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1. 发明授权

US07755275B2 Cascaded light emitting devices based on mixed conductor electroluminescence 有权
标题翻译：基于混合导体电致发光的级联发光器件
公开(公告)号：US07755275B2
公开(公告)日：2010-07-13
申请号：US11091088
申请日：2005-03-28
申请人： George G. Malliaras , Kiyotaka Mori , Jason D Slinker , Daniel A. Bernards , Hector D. Abruna
发明人： George G. Malliaras , Kiyotaka Mori , Jason D Slinker , Daniel A. Bernards , Hector D. Abruna
IPC分类号： H01J1/63
CPC分类号： H01L51/5032 , H01L27/3209 , H01L51/5203 , H01L51/5271 , H01L51/5278 , H01L2251/564
摘要： A cascaded light emitting device. The cascaded light emitting device includes: a base electrode formed of a base electrode material and electrically coupled to a base voltage lead; a top electrode layer formed of a top electrode material and electrically coupled to a top voltage lead; a number of electroluminescent layers arranged between and electrically coupled to the base electrode and top electrode layer; and at least one middle electrode layer formed of a middle electrode material. Each of the middle electrodes is coupled between two juxtaposed electroluminescent layers. The electroluminescent layers include a mixed conductor that luminesces with a peak wavelength.
摘要翻译：级联发光器件。级联发光器件包括：基极，由基极材料形成，并电耦合到基极电压引线; 由顶部电极材料形成并电耦合到顶部电压引线的顶部电极层; 布置在基极和顶电极层之间并电耦合的电致发光层; 以及由中间电极材料形成的至少一个中间电极层。每个中间电极耦合在两个并置的电致发光层之间。电致发光层包括以峰值波长发光的混合导体。

2. 发明授权

US08063556B2 Cascaded light emitting devices based on mixed conductor electroluminescence 有权
标题翻译：基于混合导体电致发光的级联发光器件
公开(公告)号：US08063556B2
公开(公告)日：2011-11-22
申请号：US12691905
申请日：2010-01-22
申请人： George G. Malliaras , Kiyotaka Mori , Jason D. Slinker , Daniel A. Bernards , Hector D. Abruna
发明人： George G. Malliaras , Kiyotaka Mori , Jason D. Slinker , Daniel A. Bernards , Hector D. Abruna
IPC分类号： H01J63/02
CPC分类号： H01L51/5032 , H01L27/3209 , H01L51/5203 , H01L51/5271 , H01L51/5278 , H01L2251/564
摘要： A cascaded light emitting device. The cascaded light emitting device includes: a base electrode formed of a base electrode material and electrically coupled to a base voltage lead; a top electrode layer formed of a top electrode material and electrically coupled to a top voltage lead; a number of electroluminescent layers arranged between and electrically coupled to the base electrode and top electrode layer; and at least one middle electrode layer formed of a middle electrode material. Each of the middle electrodes is coupled between two juxtaposed electroluminescent layers. The electroluminescent layers include a mixed conductor that luminesces with a peak wavelength.
摘要翻译：级联发光器件。级联发光器件包括：基极，由基极材料形成并电耦合到基极电压引线; 由顶部电极材料形成并电耦合到顶部电压引线的顶部电极层; 布置在基极和顶电极层之间并电耦合的电致发光层; 以及由中间电极材料形成的至少一个中间电极层。每个中间电极耦合在两个并置的电致发光层之间。电致发光层包括以峰值波长发光的混合导体。

3. 发明授权

US08106580B2 Electrospun light-emitting fibers 有权
标题翻译： Electrospun发光纤维
公开(公告)号：US08106580B2
公开(公告)日：2012-01-31
申请号：US12233340
申请日：2008-09-18
申请人： Jose M. Moran-Mirabal , Harold G. Craighead , George G. Malliaras , Hector D. Abruna , Jason D. Slinker
发明人： Jose M. Moran-Mirabal , Harold G. Craighead , George G. Malliaras , Hector D. Abruna , Jason D. Slinker
IPC分类号： H05B33/00 , H05B33/04 , H05B33/22
CPC分类号： C09K11/06 , B82Y20/00 , C09K11/02 , C09K2211/1007 , C09K2211/1029 , C09K2211/185 , D01D5/0007 , D01F1/04 , D01F1/06 , G02B6/02033 , G02B6/107
摘要： The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6.)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
摘要翻译：本发明教导了由离子过渡金属络合物（“iTMC”）例如[Ru（bpy）3] 2+（PF 6）2] / PEO混合物制成的电纺丝发光纤维，其尺寸在10.0nm至5.0μm的范围内，能够在诸如3-4V的低工作电压下具有高度局部化的发光，其接通电压接近可用作芯片上的点光源发光体的有机半导体的带隙极限。

4. 发明申请

US20120097832A1 ELECTROSPUN LIGHT-EMITTING FIBERS 有权
标题翻译： ELECTROSPUN发光纤维
公开(公告)号：US20120097832A1
公开(公告)日：2012-04-26
申请号：US13337977
申请日：2011-12-27
申请人： Jose M. Moran-Mirabal , Harold G. Craighead , George G. Malliaras , Hector D. Abruna , Jason D. Slinker
发明人： Jose M. Moran-Mirabal , Harold G. Craighead , George G. Malliaras , Hector D. Abruna , Jason D. Slinker
IPC分类号： G01J1/42 , H01B1/00 , H05B33/14 , D01F9/00 , B82Y30/00
CPC分类号： C09K11/06 , B82Y20/00 , C09K11/02 , C09K2211/1007 , C09K2211/1029 , C09K2211/185 , D01D5/0007 , D01F1/04 , D01F1/06 , G02B6/02033 , G02B6/107
摘要： The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (‘iTMCs”) such as [Ru(bpy)3]2+(PF6−)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
摘要翻译：本发明教导了由离子过渡金属络合物（“iTMC”）例如[Ru（bpy）3] 2+（PF 6 - ）2] / PEO混合物制成的电纺丝发光纤维，其尺寸在10.0nm至5.0微米范围内，能够在诸如3-4V的低工作电压下具有高度局部化的发光，其接通电压接近可用作芯片上的点光源发光体的有机半导体的带隙极限。

5. 发明申请

US20090072728A1 ELECTROSPUN LIGHT-EMITTING FIBERS 有权
标题翻译： ELECTROSPUN发光纤维
公开(公告)号：US20090072728A1
公开(公告)日：2009-03-19
申请号：US12233340
申请日：2008-09-18
申请人： Jose M. Moran-Mirabal , Harold G. Craighead , George G. Malliaras , Hector D. Abruna , Jason D. Slinker
发明人： Jose M. Moran-Mirabal , Harold G. Craighead , George G. Malliaras , Hector D. Abruna , Jason D. Slinker
IPC分类号： H01J1/62 , B29D11/00
CPC分类号： C09K11/06 , B82Y20/00 , C09K11/02 , C09K2211/1007 , C09K2211/1029 , C09K2211/185 , D01D5/0007 , D01F1/04 , D01F1/06 , G02B6/02033 , G02B6/107
摘要： The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6.)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
摘要翻译：本发明教导了由离子过渡金属络合物（“iTMC”）例如[Ru（bpy）3] 2+（PF 6）2] / PEO混合物制成的电纺丝发光纤维，其尺寸在10.0nm至5.0μm的范围内，能够在诸如3-4V的低工作电压下具有高度局部化的发光，其接通电压接近可用作芯片上的点光源发光体的有机半导体的带隙极限。

6. 发明授权

US08541940B2 Electrospun light-emitting fibers 有权
标题翻译： Electrospun发光纤维
公开(公告)号：US08541940B2
公开(公告)日：2013-09-24
申请号：US13337977
申请日：2011-12-27
申请人： Jose M. Moran-Mirabal , Harold G. Craighead , George G. Malliaras , Héctor D. Abruna , Jason D. Slinker
发明人： Jose M. Moran-Mirabal , Harold G. Craighead , George G. Malliaras , Héctor D. Abruna , Jason D. Slinker
IPC分类号： H01L51/50 , H01L51/52 , H01L51/54
CPC分类号： C09K11/06 , B82Y20/00 , C09K11/02 , C09K2211/1007 , C09K2211/1029 , C09K2211/185 , D01D5/0007 , D01F1/04 , D01F1/06 , G02B6/02033 , G02B6/107
摘要： The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6−)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
摘要翻译：本发明教导了由离子过渡金属络合物（“iTMC”）例如[Ru（bpy）3] 2+（PF 6 - ）2] / PEO混合物制成的电纺丝发光纤维，其尺寸在10.0nm至5.0μm的范围内，能够在诸如3-4V的低工作电压下具有高度局部化的发光，其接通电压接近可用作芯片上的点光源发光体的有机半导体的带隙极限。

7. 发明授权

US07687870B2 Laterally configured electrooptical devices 有权
标题翻译：左右配置电光装置
公开(公告)号：US07687870B2
公开(公告)日：2010-03-30
申请号：US11648317
申请日：2006-12-29
申请人： Hon Hang Fong , George G. Malliaras , Kiyotaka Mori
发明人： Hon Hang Fong , George G. Malliaras , Kiyotaka Mori
IPC分类号： H01L31/0232 , H01L31/00 , H01L31/06 , H01L29/739 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/732 , H01L29/22 , H01L33/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L29/06
CPC分类号： H01L31/035281 , H01L31/02167 , H01L31/028 , H01L31/03046 , H01L31/06 , H01L31/068 , H01L31/0735 , H01L33/38 , H01L51/4246 , Y02E10/50
摘要： A laterally configured electrooptical device including: a substrate having a surface; a first semiconductor layer of a first type semiconductor material; a second semiconductor layer formed of a second type semiconductor material different from the first type semiconductor material; a first electrode; and a second electrode. The lower surface of the first semiconductor layer is coupled to a section of the surface of the substrate. The lower surface of the second semiconductor layer is coupled to the upper surface of the first semiconductor layer to form a junction. The first electrode is directly electrically coupled to one side of the first semiconductor layer and the second electrode is directly electrically coupled to an opposite side of the second semiconductor layer. These electrodes are configured such that the lower surface of the first semiconductor layer and/or the upper surface of the second semiconductor layer are substantially unoccluded by them.
摘要翻译：一种横向配置的电光装置，包括：具有表面的基底; 第一半导体材料的第一半导体层; 由与第一类型半导体材料不同的第二类型半导体材料形成的第二半导体层; 第一电极; 和第二电极。第一半导体层的下表面被耦合到衬底表面的一部分。第二半导体层的下表面耦合到第一半导体层的上表面以形成结。第一电极直接电耦合到第一半导体层的一侧，并且第二电极直接电耦合到第二半导体层的相对侧。这些电极被配置为使得第一半导体层的下表面和/或第二半导体层的上表面基本上不被它们所吸引。

8. 发明申请

US20080237650A1 ELECTRODE STRUCTURE FOR FRINGE FIELD CHARGE INJECTION 审中-公开
标题翻译：用于FRINGE场充电注入的电极结构
公开(公告)号：US20080237650A1
公开(公告)日：2008-10-02
申请号：US11694136
申请日：2007-03-30
申请人： George G. Malliaras , Kiyotaka Mori , Hon Hang Fong
发明人： George G. Malliaras , Kiyotaka Mori , Hon Hang Fong
IPC分类号： H01L29/76 , H01L21/339
CPC分类号： H01L31/0224 , B82Y20/00 , B82Y30/00 , H01L51/5203 , H01L51/5225 , H01L2251/5369
摘要： A semiconductor device, including: a semiconductor material and an electrode structure electrically coupled to the semiconductor material. The electrode structure includes: a first portion formed of a first conductive material and a second portion formed of a second conductive material. Both the first portion and the second portion of the electrode structure are in direct contact with the semiconductor material. The first conductive material has a first work function and the second conductive material has a second work function that is different from the first work function, so that the second portion of the electrode structure forms a junction with the first portion. The first portion and the second portion of the electrode structure are arranged such that the fringe field from the edge of this junction between the first portion and the second portion extends into the semiconductor material.
摘要翻译：一种半导体器件，包括：半导体材料和电耦合到半导体材料的电极结构。电极结构包括：由第一导电材料形成的第一部分和由第二导电材料形成的第二部分。电极结构的第一部分和第二部分都与半导体材料直接接触。第一导电材料具有第一功函数，第二导电材料具有不同于第一功函数的第二功函数，使得电极结构的第二部分与第一部分形成结。电极结构的第一部分和第二部分被布置成使得来自第一部分和第二部分之间的该结的边缘的边缘场延伸到半导体材料中。

9. 发明申请

US20080157105A1 Laterally configured electrooptical devices 有权
标题翻译：左右配置电光装置
公开(公告)号：US20080157105A1
公开(公告)日：2008-07-03
申请号：US11648317
申请日：2006-12-29
申请人： Hon Hang Fong , George G. Malliaras , Kiyotaka Mori
发明人： Hon Hang Fong , George G. Malliaras , Kiyotaka Mori
IPC分类号： H01L33/00 , H01L31/072
CPC分类号： H01L31/035281 , H01L31/02167 , H01L31/028 , H01L31/03046 , H01L31/06 , H01L31/068 , H01L31/0735 , H01L33/38 , H01L51/4246 , Y02E10/50
摘要： A laterally configured electrooptical device including: a substrate having a surface; a first semiconductor layer of a first type semiconductor material; a second semiconductor layer formed of a second type semiconductor material different from the first type semiconductor material; a first electrode; and a second electrode. The lower surface of the first semiconductor layer is coupled to a section of the surface of the substrate. The lower surface of the second semiconductor layer is coupled to the upper surface of the first semiconductor layer to form a junction. The first electrode is directly electrically coupled to one side of the first semiconductor layer and the second electrode is directly electrically coupled to an opposite side of the second semiconductor layer. These electrodes are configured such that the lower surface of the first semiconductor layer and/or the upper surface of the second semiconductor layer are substantially unoccluded by them.
摘要翻译：一种横向配置的电光装置，包括：具有表面的基底; 第一半导体材料的第一半导体层; 由与第一类型半导体材料不同的第二类型半导体材料形成的第二半导体层; 第一电极; 和第二电极。第一半导体层的下表面被耦合到衬底表面的一部分。第二半导体层的下表面耦合到第一半导体层的上表面以形成结。第一电极直接电耦合到第一半导体层的一侧，并且第二电极直接电耦合到第二半导体层的相对侧。这些电极被配置为使得第一半导体层的下表面和/或第二半导体层的上表面基本上不被它们所吸引。

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