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1. 发明授权

US07026657B2 High radiance led chip and a method for producing same 有权
标题翻译：高辐射led芯片及其制造方法
公开(公告)号：US07026657B2
公开(公告)日：2006-04-11
申请号：US10258154
申请日：2001-04-19
申请人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
发明人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/145 , H01L33/44 , H01L2224/16225
摘要： The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light.The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
摘要翻译：本发明涉及一种包括发射辐射有源区（32）和窗口层（2）的发光二极管芯片（1）。为了提高发光效率，发射有源区域（32）的横截面面积小于可用于解耦光的窗口层（2）的横截面面积。本发明还涉及一种用于在发光部件的表面上制造透镜结构的方法。

2. 发明授权

US07306960B2 High radiance LED chip and a method for producing same 有权
标题翻译：高亮度LED芯片及其制造方法
公开(公告)号：US07306960B2
公开(公告)日：2007-12-11
申请号：US11311809
申请日：2005-12-19
申请人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
发明人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/145 , H01L33/44 , H01L2224/16225
摘要： The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light.The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
摘要翻译：本发明涉及包括发射有辐射的有源区和窗口层的发光二极管芯片。为了提高发光效率，发射有源区域的横截面面积小于可用于解耦光的窗口层的横截面面积。本发明还涉及一种用于在发光部件的表面上制造透镜结构的方法。

3. 发明申请

US20060138439A1 High radiance LED chip and a method for producing same 有权
标题翻译：高亮度LED芯片及其制造方法
公开(公告)号：US20060138439A1
公开(公告)日：2006-06-29
申请号：US11311809
申请日：2005-12-19
申请人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
发明人： Georg Bogner , Siegmar Kugler , Ernst Nirschl , Raimund Oberschmid , Karl-Heinz Schlereth , Olaf Schoenfeld , Norbert Stath , Gerald Neumann
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/08 , H01L33/145 , H01L33/44 , H01L2224/16225
摘要： The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
摘要翻译：本发明涉及包括发射有辐射的有源区和窗口层的发光二极管芯片。为了提高发光效率，发射有源区域的横截面面积小于可用于解耦光的窗口层的横截面面积。本发明还涉及一种用于在发光部件的表面上制造透镜结构的方法。

4. 发明授权

US5999552A Radiation emitter component 失效
标题翻译：辐射发射器组件
公开(公告)号：US5999552A
公开(公告)日：1999-12-07
申请号：US9606
申请日：1998-01-20
申请人： Georg Bogner , Herbert Brunner , Heinz Haas , Johann Luft , Ernst Nirschl , Werner Spaeth , Norbert Stath , Wolfgang Teich
发明人： Georg Bogner , Herbert Brunner , Heinz Haas , Johann Luft , Ernst Nirschl , Werner Spaeth , Norbert Stath , Wolfgang Teich
IPC分类号： H01L33/56 , H01S3/00 , H01S5/00 , H01S5/022 , H01S3/18 , H01L33/00
CPC分类号： H01S5/02244 , H01S5/02228 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2933/0091 , H01L33/56
摘要： A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.
摘要翻译：辐射发射器部件，特别是具有传统发光二极管外壳的红外发射器部件包括两个电极连接件，其中之一具有良好形状的反射器。壳体具有光学透明的非导电封装材料。将半导体激光芯片紧固在发光二极管壳体的形状好的反射器中。半导体激光芯片具有量子阱结构，特别是具有应变层结构，例如具有层序列GaAlAs-InGaAs-GaAlAs的MOVPE外延层。漫射材料可以插入到发光二极管外壳的光学透明的非导电材料中。关于类型和浓度来构造或插入扩散材料，使得与封装在发光二极管外壳中的半导体激光器芯片有关，产生辐射特性曲线或有效发射表面的增加，即，与传统的红外发光二极管相当。

5. 发明授权

US06734467B2 LED white light source with broadband excitation 有权
标题翻译： LED白光源带宽带激发
公开(公告)号：US06734467B2
公开(公告)日：2004-05-11
申请号：US10137885
申请日：2002-05-03
申请人： Karl-Heinz Schlereth , Volker Härle , Norbert Stath
发明人： Karl-Heinz Schlereth , Volker Härle , Norbert Stath
IPC分类号： H01L2920
CPC分类号： H01L33/50 , H01L33/04 , H01L33/08 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A white light source is described and has a UV-/blue-emitting semiconductor LED and an embedding compound provided with phosphor particles. The LED is provided with a plurality of light-emitting zones that are applied within a layer structure on a common substrate. An emission maxima of the light-emitting zones are energetically detuned relative to one another by different choice of the composition or of the layer thickness of the semiconductor material.
摘要翻译：描述了白光源，并且具有UV /蓝色发光半导体LED和设置有荧光体颗粒的嵌入化合物。 LED设置有多个发光区域，其被施加在公共基板上的层结构内。通过半导体材料的组成或层厚度的不同选择，发光区域的发射最大值相对于彼此能量地失谐。

6. 发明授权

US06440765B1 Method for fabricating an infrared-emitting light-emitting diode 失效
标题翻译：制造红外发光二极管的方法
公开(公告)号：US06440765B1
公开(公告)日：2002-08-27
申请号：US09246747
申请日：1999-02-08
申请人： Reinhard Sedlmeier , Ernst Nirschl , Norbert Stath
发明人： Reinhard Sedlmeier , Ernst Nirschl , Norbert Stath
IPC分类号： H01L2100
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/02
摘要： A method for fabricating an infrared-emitting light-emitting diode in which a layer sequence is applied onto a semiconductor substrate, preferably composed of GaAs. The layer sequence has, proceeding from the semiconductor substrate, a first AlGaAs cover layer, a GaAs and/or AlGaAs containing active layer and a second AlGaAs cover layer. In which case, the first AlGaAs cover layer and the active layer are fabricated by a metal organic vapor phase epitaxy (MOVPE) method and the second AlGaAs cover layer is fabricated by a liquid phase epitaxy (LPE) method. Furthermore, an electrically conductive coupling-out layer having a thickness of at least about 10 &mgr;m is deposited on the second AlGaAs cover layer by the LPE method. The coupling-out layer is optically transparent in the infrared spectral region.
摘要翻译：一种制造其中将层序施加到优选由GaAs构成的半导体衬底上的红外发射二极管的方法。该层序列具有从半导体衬底开始的第一AlGaAs覆盖层，包含GaAs和/或AlGaAs的有源层和第二AlGaAs覆盖层。在这种情况下，通过金属有机气相外延（MOVPE）方法制造第一AlGaAs覆盖层和有源层，并且通过液相外延（LPE）方法制造第二AlGaAs覆盖层。此外，通过LPE方法在第二AlGaAs覆盖层上沉积具有至少约10μm厚度的导电耦合出层。耦合输出层在红外光谱区域是光学透明的。

7. 发明授权

US5654559A Optical coupling device and method for manufacturing the same 失效
标题翻译：光耦合装置及其制造方法
公开(公告)号：US5654559A
公开(公告)日：1997-08-05
申请号：US637581
申请日：1996-04-25
申请人： Werner Spaeth , Norbert Stath , Ernst Nirschl , Walter Wegleiter , Werner Kuhlmann , Rudolf Buchberger
发明人： Werner Spaeth , Norbert Stath , Ernst Nirschl , Walter Wegleiter , Werner Kuhlmann , Rudolf Buchberger
IPC分类号： H01L23/48 , H01L25/065 , H01L31/173 , H01L31/167
CPC分类号： H01L23/48 , H01L31/173 , H01L2224/48463
摘要： An optical coupling device and method for manufacturing the same is disclosed wherein a light-emitting semiconductor transmitter chip is secured to a light-detecting semiconductor receiver chip via a transparent insulating layer, a structured spacer layer and a transparent connecting layer. The resultant optocoupler has a high coupling factor and may be reliably manufactured into SMT compatible packages.
摘要翻译：公开了一种光耦合器件及其制造方法，其中通过透明绝缘层，结构化间隔层和透明连接层将发光半导体发射器芯片固定到光检测半导体接收器芯片。所得的光耦合器具有高耦合系数，并且可以可靠地制造成与SMT兼容的封装。

8. 发明授权

US09537070B2 Optoelectronic component with a wireless contacting 有权
标题翻译：光电组件与无线接触
公开(公告)号：US09537070B2
公开(公告)日：2017-01-03
申请号：US11664304
申请日：2005-09-13
申请人： Ewald Karl Michael Guenther , Jörg Erich Sorg , Norbert Stath
发明人： Ewald Karl Michael Guenther , Jörg Erich Sorg , Norbert Stath
IPC分类号： H01L27/15 , H01L33/62 , H01L23/00 , H01L33/52 , H01L33/54 , H01L33/50
CPC分类号： H01L33/62 , H01L24/24 , H01L24/82 , H01L33/508 , H01L33/52 , H01L33/54 , H01L2224/24051 , H01L2224/24105 , H01L2224/24226 , H01L2224/24998 , H01L2224/82007 , H01L2224/82039 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01049 , H01L2924/01051 , H01L2924/01058 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/351 , H01L2924/00
摘要： An optoelectronic component contains a semiconductor chip (1) and a carrier body (10), which are provided with a transparent, electrically insulating encapsulation layer (3), the encapsulation layer (3) having two cutouts (11, 12) for uncovering a contact area (6) and a connection region (8) of the carrier body, and an electrically conductive layer (14) being led from the contact area (6) over a partial region of the encapsulation layer (3) to the electrical connection region (8) of the carrier body (10) in order to electrically connect the contact area (6) and the electrical connection region (8) to one another. The radiation emitted in a main radiation direction (13) by the semiconductor chip (1) is coupled out through the encapsulation layer (3), which advantageously contains luminescence conversion substances for the wavelength conversion of the emitted radiation.
摘要翻译：光电子部件包含半导体芯片（1）和载体主体（10），其具有透明的电绝缘封装层（3），所述封装层（3）具有两个切口（11,12），用于露出接触区域（6）和所述载体主体的连接区域（8），以及导电层（14），其从所述接触区域（6）在所述封装层（3）的部分区域上引导到所述电连接区域（10）的所述电连接区域（8）之间，以将所述接触区域（6）和所述电连接区域（8）彼此电连接。通过半导体芯片（1）在主辐射方向（13）上发射的辐射通过封装层（3）耦合出来，该封装层有利地包含发射辐射的波长转换的发光转换物质。

9. 发明申请

US20120223360A1 Optoelectronic Component and Method for Producing an Opto-Electronic Component 有权
标题翻译：光电子元件及其制造方法
公开(公告)号：US20120223360A1
公开(公告)日：2012-09-06
申请号：US13505283
申请日：2010-10-05
申请人： Bernd Barchmann , Axel Kal Tenbacher , Norbert Stath , Walter Wegleiter , Karl Weidner , Ralph Wirth
发明人： Bernd Barchmann , Axel Kal Tenbacher , Norbert Stath , Walter Wegleiter , Karl Weidner , Ralph Wirth
IPC分类号： H01L33/48
CPC分类号： H01L33/62 , H01L24/24 , H01L24/82 , H01L25/0753 , H01L2224/24998 , H01L2224/76155 , H01L2224/82102 , H01L2924/01006 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/12042 , H01L2924/00
摘要： An opto-electronic component has a carrier element (3) with a connection region (5). Arranged on the carrier element (3) is a semiconductor chip (7). A contact region (10) is mounted on the surface (8) of the semiconductor chip (7) remote from the carrier element (3). The connection region (5) is electrically conductively connected to the contact region (10) by way of an unsupported conductive structure (13). A method for manufacturing an opto-electronic component is described.
摘要翻译：光电子部件具有带有连接区域（5）的载体元件（3）。在载体元件（3）上排列的是半导体芯片（7）。接触区域（10）安装在远离载体元件（3）的半导体芯片（7）的表面（8）上。连接区域（5）通过未支撑的导电结构（13）导电地连接到接触区域（10）。描述了一种用于制造光电子部件的方法。

10. 发明授权

US08256947B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08256947B2
公开(公告)日：2012-09-04
申请号：US12306919
申请日：2007-05-31
申请人： Volker Harle , Alfred Lell , Hubert Ott , Norbert Stath , Uwe Strauss
发明人： Volker Harle , Alfred Lell , Hubert Ott , Norbert Stath , Uwe Strauss
IPC分类号： F21V4/00
CPC分类号： G02B6/0003 , F21S41/13 , F21S41/135 , F21S41/14 , F21S41/141 , F21S41/16 , F21S41/24 , F21S45/46 , G01M11/062 , G01M11/088 , G01M11/31 , G01M11/33 , G02B6/4469 , G02B6/447
摘要： A light-emitting device, comprising: a radiation source (5), which emits radiation having a first wavelength, an optical waveguide (10), into which the radiation emitted by the radiation source is coupled, and a converter material (15), which converts the radiation transported through the optical waveguide (10) into light (20) having a second, longer wavelength. A light-emitting device of this type can have an improved light conversion efficiency.
摘要翻译：一种发光装置，包括：辐射源（5），其发射具有第一波长的辐射;辐射源发射的辐射被耦合到其中的光波导（10）;以及转换器材料（15），其将通过光波导（10）传输的辐射转换成具有第二较长波长的光（20）。这种类型的发光装置可以具有改进的光转换效率。

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