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1. 发明授权

US07456460B2 Phase change memory element and method of making the same 失效
标题翻译：相变记忆元件及其制作方法
公开(公告)号：US07456460B2
公开(公告)日：2008-11-25
申请号：US11668208
申请日：2007-01-29
申请人： Geoffrey W. Burr , Yi-Chou Chen , Hsiang-Lan Lung
发明人： Geoffrey W. Burr , Yi-Chou Chen , Hsiang-Lan Lung
IPC分类号： H01L27/108
CPC分类号： H01L45/122 , G11C13/0004 , G11C2213/55 , H01L45/06 , H01L45/1675
摘要： Thin-film phase-change memories having small phase-change switching volume formed by overlapping thing films. Exemplary embodiments include a phase-change memory element, including a first phase change layer having a resistance, a second phase change layer having a resistance, an insulating layer disposed between the first and second phase change layers; and a third phase change layer having a resistance, and coupled to each of the first and second phase change layers, bridging the insulating layer and electrically coupling the first and second phase change layers, wherein the resistance of the third phase change layer is greater than both the resistance of the first phase change layer and the second phase change layer.
摘要翻译：薄膜相变存储器具有通过重叠的物质膜形成的小的相变开关体积。示例性实施例包括相变存储元件，包括具有电阻的第一相变层，具有电阻的第二相变层，设置在第一和第二相变层之间的绝缘层; 以及具有电阻的第三相变层，并且耦合到所述第一和第二相变层中的每一个，桥接所述绝缘层并电耦合所述第一和第二相变层，其中所述第三相变层的电阻大于第一相变层和第二相变层的电阻。

2. 发明申请

US20080179582A1 PHASE CHANGE MEMORY ELEMENT AND METHOD OF MAKING THE SAME 失效
标题翻译：相变记忆元件及其制造方法
公开(公告)号：US20080179582A1
公开(公告)日：2008-07-31
申请号：US11668208
申请日：2007-01-29
申请人： Geoffrey W. Burr , Yi-Chou Chen , Hsiang-Lan Lung
发明人： Geoffrey W. Burr , Yi-Chou Chen , Hsiang-Lan Lung
IPC分类号： H01L45/00
CPC分类号： H01L45/122 , G11C13/0004 , G11C2213/55 , H01L45/06 , H01L45/1675
摘要： Thin-film phase-change memories having small phase-change switching volume formed by overlapping thing films. Exemplary embodiments include a phase-change memory element, including a first phase change layer having a resistance, a second phase change layer having a resistance, an insulating layer disposed between the first and second phase change layers; and a third phase change layer having a resistance, and coupled to each of the first and second phase change layers, bridging the insulating layer and electrically coupling the first and second phase change layers, wherein the resistance of the third phase change layer is greater than both the resistance of the first phase change layer and the second phase change layer.
摘要翻译：薄膜相变存储器具有通过重叠的物质膜形成的小的相变开关体积。示例性实施例包括相变存储元件，包括具有电阻的第一相变层，具有电阻的第二相变层，设置在第一和第二相变层之间的绝缘层; 和具有电阻的第三相变层，并且耦合到第一和第二相变层中的每一个，桥接绝缘层并电耦合第一和第二相变层，其中第三相变层的电阻大于第一相变层和第二相变层的电阻。

3. 发明申请

US20080224119A1 PHASE CHANGE MEMORY ELEMENT AND METHOD OF MAKING THE SAME 失效
标题翻译：相变记忆元件及其制造方法
公开(公告)号：US20080224119A1
公开(公告)日：2008-09-18
申请号：US12130075
申请日：2008-05-30
申请人： Geoffrey W. Burr , Yi-Chou Chen , Hsiang-Lan Lung
发明人： Geoffrey W. Burr , Yi-Chou Chen , Hsiang-Lan Lung
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/122 , G11C13/0004 , G11C2213/55 , H01L45/06 , H01L45/1675
摘要： Thin-film phase-change memories having small phase-change switching volume formed by overlapping thin films. Exemplary embodiments include a phase-change memory element, including a first phase change layer having a resistance, a second phase change layer having a resistance, an insulating layer disposed between the first and second phase change layers; and a third phase change layer having a resistance, and coupled to each of the first and second phase change layers, bridging the insulating layer and electrically coupling the first and second phase change layers, wherein the resistance of the third phase change layer is greater than both the resistance of the first phase change layer and the second phase change layer.
摘要翻译：具有通过重叠薄膜形成的具有小的相变开关体积的薄膜相变存储器。示例性实施例包括相变存储元件，包括具有电阻的第一相变层，具有电阻的第二相变层，设置在第一和第二相变层之间的绝缘层; 以及具有电阻的第三相变层，并且耦合到所述第一和第二相变层中的每一个，桥接所述绝缘层并电耦合所述第一和第二相变层，其中所述第三相变层的电阻大于第一相变层和第二相变层的电阻。

4. 发明授权

US07968861B2 Phase change memory element 失效
标题翻译：相变存储元件
公开(公告)号：US07968861B2
公开(公告)日：2011-06-28
申请号：US12130075
申请日：2008-05-30
申请人： Geoffrey W. Burr , Yi-Chou Chen , Hsiang-Lan Lung
发明人： Geoffrey W. Burr , Yi-Chou Chen , Hsiang-Lan Lung
IPC分类号： H01L45/00
CPC分类号： H01L45/122 , G11C13/0004 , G11C2213/55 , H01L45/06 , H01L45/1675
摘要： Thin-film phase-change memories having small phase-change switching volume formed by overlapping thin films. Exemplary embodiments include a phase-change memory element, including a first phase change layer having a resistance, a second phase change layer having a resistance, an insulating layer disposed between the first and second phase change layers; and a third phase change layer having a resistance, and coupled to each of the first and second phase change layers, bridging the insulating layer and electrically coupling the first and second phase change layers, wherein the resistance of the third phase change layer is greater than both the resistance of the first phase change layer and the second phase change layer.
摘要翻译：具有通过重叠薄膜形成的具有小的相变开关体积的薄膜相变存储器。示例性实施例包括相变存储元件，包括具有电阻的第一相变层，具有电阻的第二相变层，设置在第一和第二相变层之间的绝缘层; 以及具有电阻的第三相变层，并且耦合到所述第一和第二相变层中的每一个，桥接所述绝缘层并电耦合所述第一和第二相变层，其中所述第三相变层的电阻大于第一相变层和第二相变层的电阻。

5. 发明授权

US07825398B2 Memory cell having improved mechanical stability 有权
标题翻译：具有改善的机械稳定性的记忆单元
公开(公告)号：US07825398B2
公开(公告)日：2010-11-02
申请号：US12098556
申请日：2008-04-07
申请人： Thomas D. Happ , Yi-Chou Chen , Jan Boris Philipp , Hsiang-Lan Lung
发明人： Thomas D. Happ , Yi-Chou Chen , Jan Boris Philipp , Hsiang-Lan Lung
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , G11C11/5678 , G11C13/0004 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1273 , H01L45/14 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1675
摘要： Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode comprising a base portion and a pillar portion on the base portion, the pillar portion and the base portion having respective outer surfaces and the pillar portion having a width less than that of the base portion. A memory element is on a top surface of the pillar portion of the bottom electrode, and a top electrode is on the memory element. A dielectric spacer contacts the outer surface of the pillar portion, the outer surface of the base portion of the bottom electrode self-aligned with an outer surface of the dielectric spacer.
摘要翻译：描述存储单元以及制造方法。本文所述的存储单元包括底部电极，其包括基部和基部上的柱部，所述柱部和基部具有各自的外表面，并且所述柱部的宽度小于所述基部的宽度。存储元件位于底电极的柱部的顶面上，上电极位于存储元件上。电介质隔离物与柱部分的外表面接触，底电极的基部的外表面与电介质间隔物的外表面自对准。

6. 发明授权

US07683360B2 Horizontal chalcogenide element defined by a pad for use in solid-state memories 有权
标题翻译：由用于固态存储器的焊盘限定的水平硫族化物元件
公开(公告)号：US07683360B2
公开(公告)日：2010-03-23
申请号：US11378904
申请日：2006-03-17
申请人： Yi-Chou Chen , Hsiang-Lan Lung , Ruichen Liu
发明人： Yi-Chou Chen , Hsiang-Lan Lung , Ruichen Liu
IPC分类号： H01L29/04
CPC分类号： H01L45/06 , G11C13/0004 , H01L27/2463 , H01L45/1226 , H01L45/144 , H01L45/1691
摘要： A memory cell structure includes a substrate having a bottom electrode at least partially disposed within the substrate; a pad disposed at least partially over the substrate; a phase change element having a chalcogenide material, disposed at least partially over the substrate and adjacent to the pad, the phase change element being adjacent and operatively coupled to the bottom electrode; and a top electrode operatively coupled to the phase change element. Moreover, the pad is formed by a method including depositing a first material layer over the substrate, etching the first material layer to form a pad strip and to expose the bottom electrode, and etching the pad strip to from the pad.
摘要翻译：存储单元结构包括具有至少部分地设置在基板内的底电极的基板; 至少部分地设置在所述基板上的垫; 具有硫族化物材料的相变元件，至少部分地设置在所述衬底上并且与所述焊盘相邻，所述相变元件邻近并且可操作地耦合到所述底部电极; 以及可操作地耦合到相变元件的顶部电极。此外，衬垫通过包括在衬底上沉积第一材料层的方法形成，蚀刻第一材料层以形成焊盘条并暴露底部电极，以及将焊盘条从焊盘蚀刻。

7. 发明授权

US06828081B2 Method and system for lithography using phase-change material 有权
公开(公告)号：US06828081B2
公开(公告)日：2004-12-07
申请号：US10315003
申请日：2002-12-10
申请人： Yi-Chou Chen , Chih-Yuan Lu , Hsiang-Lan Lung , Li-Hsin Chuang
发明人： Yi-Chou Chen , Chih-Yuan Lu , Hsiang-Lan Lung , Li-Hsin Chuang
IPC分类号： H01L2182
CPC分类号： H01L45/1213 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144
摘要： Methods and systems are provided for forming an electrical interconnect layer between two layers of an integrated circuit. The interconnect layer is formed using a material having a first electrical conductivity corresponding to a first state and a second electrical conductivity corresponding to a second state, where the first electrical conductivity is different from the second electrical conductivity. An area of the material of the interconnect layer may be selected, for example, using a mask. Then energy may be applied to the selected area to change the electrical conductivity of the material in the selected area of the interconnect layer. Thus, the present invention may be used to implement optical memory devices which may be read by an electrical circuit.

8. 发明授权

US08946671B2 Mask read only memory containing diodes and method of manufacturing the same 有权
标题翻译：掩模只读存储器二极管及其制造方法
公开(公告)号：US08946671B2
公开(公告)日：2015-02-03
申请号：US10642244
申请日：2003-08-18
申请人： Sheng-Chih Lai , Hsiang-Lan Lung , Yi-Chou Chen
发明人： Sheng-Chih Lai , Hsiang-Lan Lung , Yi-Chou Chen
IPC分类号： H01L47/00 , H01L27/102 , H01L21/822 , H01L27/06
CPC分类号： H01L27/1021 , H01L21/8221 , H01L27/0688
摘要： A mask read only memory containing diodes and method of manufacturing the same. The mask read only memory is a high-density three dimensional array formed by stacking a plurality of diode layers and the logic “0” or “1” is defined by whether there is a dielectric layer on the diode.
摘要翻译：掩模只读存储器二极管及其制造方法。掩模只读存储器是通过堆叠多个二极管层形成的高密度三维阵列，并且逻辑“0”或“1”由二极管上是否存在介电层来定义。

9. 发明授权

US07696503B2 Multi-level memory cell having phase change element and asymmetrical thermal boundary 有权
标题翻译：具有相变元件和不对称热边界的多层存储单元
公开(公告)号：US07696503B2
公开(公告)日：2010-04-13
申请号：US11837636
申请日：2007-08-13
申请人： Hsiang-Lan Lung , Yi-Chou Chen
发明人： Hsiang-Lan Lung , Yi-Chou Chen
IPC分类号： H01L29/02
CPC分类号： H01L45/143 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/1293 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/1641 , H01L45/1675 , H01L45/1683 , Y10T29/49117
摘要： A multi-level, phase change memory cell has first and second thermal isolation materials having different thermal conductivity properties situated in heat-conducting relation to first and second boundaries of the phase change material. Accordingly, when an electrical current is applied to raise the temperature of the memory material, heat is drawn away from the memory material asymmetrically along a line orthogonal to electric field lines between the electrodes.
摘要翻译：多级相变存储器单元具有第一和第二热隔离材料，该材料具有不同的导热性质，其位于与相变材料的第一和第二边界的导热关系中。因此，当施加电流以提高存储材料的温度时，沿着与电极之间的电场线正交的线不对称地将热量从存储材料拉出。

10. 发明授权

US07688619B2 Phase change memory cell and manufacturing method 有权
标题翻译：相变存储单元及其制造方法
公开(公告)号：US07688619B2
公开(公告)日：2010-03-30
申请号：US11612093
申请日：2006-12-18
申请人： Hsiang-Lan Lung , Rich Liu , Shih-Hung Chen , Yi-Chou Chen
发明人： Hsiang-Lan Lung , Rich Liu , Shih-Hung Chen , Yi-Chou Chen
IPC分类号： G11C11/00
CPC分类号： G11C8/10 , G11C8/08 , G11C13/0004 , G11C13/0028 , G11C2213/53 , G11C2213/79 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1625 , H01L45/165 , H01L45/1675
摘要： A phase change memory cell includes first and second electrodes electrically coupled by a phase change element. At least a section of the phase change element comprises a higher reset transition temperature portion and a lower reset transition temperature portion. The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion. The phase change element may comprise an outer, generally tubular, higher reset transition temperature portion surrounding an inner, lower reset transition temperature portion.
摘要翻译：相变存储单元包括由相变元件电耦合的第一和第二电极。相变元件的至少一部分包括较高的复位转变温度部分和较低的复位转变温度部分。下复位转变温度部分包括可以通过电流通过从相对于较高复位转变温度部分的较低温度的大致结晶到大致非晶状态的相变区域。相变元件可以包括围绕内部，下部复位转变温度部分的外部，大体上管状的较高复位转变温度部分。

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