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    • 8. 发明授权
    • Field effect transistor amplifier
    • 场效应晶体管放大器
    • US5089790A
    • 1992-02-18
    • US575617
    • 1990-08-31
    • Mitsuru MochizukiYouji IsotaTadashi TakagiShuji Urasaki
    • Mitsuru MochizukiYouji IsotaTadashi TakagiShuji Urasaki
    • H03F3/193H03F3/60
    • H03F3/1935
    • A field effect transistor amplifer has a high gain in a plurality of microwave frequency bands. In a field effect transistor with the gate terminal and the drain terminal thereof connected to a matching circuit on the input side and a matching circuit on the output side, respectively, a resonance circuit which is composed of a series circuit including at least one second inductor and a capacitor and connected in parallel to a resistor, is connected between at least one of the gate terminal of the field effect transistor and the ground and between the drain terminal of the field effect transistor and the ground. When a series circuit including the first inductor, at least one second inductor and the capacitor is resonated and short-circuited, the gain at the resonance frequency is dropped and a gain in the range outside of the desired bands is suppressed. When a series circuit including at least one second inductor and the capacitor and connected to the resistor is resonated and short-circuited, the drop of the gain at the resonance frequency due to the resistor is suppressed. This thereby enables high gains to be obtained in the desired bands.
    • 场效应晶体管放大器在多个微波频带中具有高增益。 在其栅极端子和漏极端子分别连接到输入侧的匹配电路和输出侧的匹配电路的场效应晶体管中,分别由包括至少一个第二电感器的串联电路组成的谐振电路 并且并联连接到电阻器的电容器连接在场效应晶体管的栅极端子和接地之间以及场效应晶体管的漏极端子与地之间的至少一个之间。 当包括第一电感器,至少一个第二电感器和电容器的串联电路被谐振和短路时,谐振频率处的增益下降,并且抑制期望频带之外的范围内的增益。 当包括至少一个第二电感器和电容器并且连接到电阻器的串联电路被谐振和短路时,由于电阻器而导致的谐振频率处的增益的下降被抑制。 由此,能够获得期望频带的高增益。