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    • 4. 发明授权
    • Photoelectrolysis method and means
    • 光电方法及手段
    • US4650554A
    • 1987-03-17
    • US791063
    • 1985-10-24
    • Roy Gordon
    • Roy Gordon
    • C25B1/00H01G9/20C25B1/02
    • C25B1/003H01G9/20Y10S136/291
    • An integrated photoelectrolytic apparatus for catalyzing the photodecomposition of a liquid electrolyte, such as water, into its gaseous decomposition products includes a photovoltaic section bonded mechanically and electrically to one surface of a porous electronically conductive barrier section which is arranged to inhibit the evolution of decomposition products at its pore surfaces. A catalyst for the electrolytic evolution of a decomposition product is applied to the opposite surface of said barrier section so that when the bonded-together sections are wetted by an electrolyte and light is incident on the photovoltaic section, one decomposition product evolves at the exposed surface of the photovoltaic section while another decomposition product evolves at the catalytic surface of the barrier section.
    • 用于催化诸如水的液体电解质的光分解的其中的光电解装置包括光电部分,其机械地和电气地粘合在多孔电子导电屏障部分的一个表面上,所述多孔电子导电屏障部分设置成抑制分解产物的逸出 在其孔表面。 将用于分解产物的电解放电的催化剂施加到所述阻挡部分的相对表面上,使得当接合部分被电解质润湿并且光入射到光伏部分上时,一个分解产物在暴露表面 ,而另一种分解产物在阻挡部分的催化表面放出。
    • 6. 发明申请
    • Atomic layer deposition using metal amidinates
    • 使用金属脒基的原子层沉积
    • US20060141155A1
    • 2006-06-29
    • US10534687
    • 2003-11-14
    • Roy GordonBooyong Lim
    • Roy GordonBooyong Lim
    • C23C16/40B05D3/02C23C16/34
    • C23C16/404C07C257/14C23C16/18C23C16/40C23C16/403C23C16/406C23C16/45553
    • Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN′-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N′-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.
    • 金属膜以均匀的厚度沉积并具有优异的台阶覆盖率。 通过交替剂量的铜(I)NN'-二异丙基乙酰胺化物蒸气和氢气的反应将铜金属膜沉积在加热的基底上。 通过交替剂量的双(N,N'-二异丙基乙酰胺基)钴(II)蒸气和氢气的反应,将钴金属膜沉积在加热的基底上。 这些金属的氮化物和氧化物可以通过分别用氨或水蒸汽代替氢来形成。 薄膜具有非常均匀的厚度,并且在窄孔中具有优异的台阶覆盖率。 合适的应用包括微电子学中的电互连和磁信息存储设备中的磁阻层。