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    • 1. 发明授权
    • Single bit nonvolatile memory cell and methods for programming and erasing thereof
    • 单位非易失性存储单元及其编程和擦除方法
    • US07136306B2
    • 2006-11-14
    • US10680878
    • 2003-10-07
    • Gang XueJan Van Houdt
    • Gang XueJan Van Houdt
    • G11C16/04G11C5/06
    • G11C16/0466G11C16/10G11C16/14G11C16/26
    • A method for programming a single bit nonvolatile memory cell integrated on a metal-dielectric-semiconductor technology chip. The memory cell comprises a semiconductor substrate including a source, a drain, and a channel in-between the source and the drain. The memory cell further comprises a control gate that comprises a gate electrode and a dielectric stack. The gate electrode is separated from the channel by the dielectric stack. Further, the dielectric stack comprises at least one charge storage dielectric layer. The method for programming the memory cell comprises applying electrical ground to the source, applying a first voltage having a first polarity to the drain, applying a second voltage of the first polarity to the control gate; and applying a third voltage having a second polarity opposite to the first polarity to the semiconductor substrate.
    • 一种用于编程集成在金属 - 电介质 - 半导体技术芯片上的单个位非易失性存储单元的方法。 存储单元包括在源极和漏极之间包括源极,漏极和沟道的半导体衬底。 该存储单元还包括一个包括栅电极和电介质叠层的控制栅极。 栅极通过电介质堆叠与沟道分离。 此外,电介质叠层包括至少一个电荷存储电介质层。 用于对存储单元进行编程的方法包括将电接地施加到源极,向漏极施加具有第一极性的第一电压,将第一极性的第二电压施加到控制栅极; 以及将具有与所述第一极性相反的第二极性的第三电压施加到所述半导体衬底。
    • 2. 发明授权
    • Non-volatile electrically alterable semiconductor memory device
    • 非易失性电可变半导体存储器件
    • US06653682B1
    • 2003-11-25
    • US09696616
    • 2000-10-25
    • Jan Van HoudtGang Xue
    • Jan Van HoudtGang Xue
    • H01L29788
    • H01L29/66825G11C16/0425H01L21/28273H01L29/42324H01L29/7886
    • Apparatus for an electrically programmable and erasable memory device and methods for programming, erasing and reading the device. The device has a single transistor including a source, a drain, a control gate and a floating gate positioned between the control gate, the source and the drain, where the floating gate is capacitively coupled to the drain. At least one part of the floating gate is partly positioned between the control gate, the drain and the source, and the other part of the floating gate overlaps with the drain. Further, the single transistor of the device includes means for injecting hot electrons generated by the drain induced secondary impact ionization onto the floating gate. Additionally, the means are arranged to induce Fowler-Nordheim tunnelling of charges from the floating gate to the drain.
    • 用于电可编程和可擦除存储器件的装置以及用于编程,擦除和读取器件的方法。 器件具有单个晶体管,其包括位于控制栅极,源极和漏极之间的源极,漏极,控制栅极和浮置栅极,其中浮动栅极电容耦合到漏极。 浮栅的至少一部分部分地位于控制栅极,漏极和源极之间,并且浮栅的另一部分与漏极重叠。 此外,器件的单个晶体管包括用于将由漏极引起的次级冲击电离产生的热电子注入到浮动栅极上的装置。 另外,这些装置被设置成将Fowler-Nordheim隧道从浮动栅极引导到漏极。
    • 6. 发明授权
    • Method and data card for shielding short message receiving function
    • 屏蔽短信接收功能的方法和数据卡
    • US08660594B2
    • 2014-02-25
    • US13520804
    • 2010-09-25
    • Yi ZhangGang Xue
    • Yi ZhangGang Xue
    • H04W4/00
    • H04W8/183H04W4/14H04W60/00H04W92/08
    • The disclosure discloses a method for shielding a short message receiving function. The method includes the following steps of: storing parameters related to short-message-receiving-function-shielding in an Element File (EF) in a Subscriber Identity Model (SIM) card; performing inter-verification by utilizing the EF in the SIM-card and a Non Volatile (NV) random access memory in a data card to determine whether the SIM-card is applied to the data card; and when the SIM-card is determined to be applied to the data card, reporting the parameters related to short-message-receiving-function-shielding to a network during the process of attaching mobile terminal to the network. Compared with the conventional art, the technical solution of the disclosure can shield the short message receiving function without generating short message fee, so as to enhance the stability of the data service to a large extent and increase the flexibility for a subscriber in selecting the service type at the terminal.
    • 本公开公开了一种用于屏蔽短消息接收功能的方法。 该方法包括以下步骤:在用户识别模型(SIM)卡中的元素文件(EF)中存储与短消息接收功能屏蔽有关的参数; 通过利用SIM卡中的EF和数据卡中的非易失性(NV)随机存取存储器来执行相互验证,以确定SIM卡是否被应用于数据卡; 并且当SIM卡被确定为应用于数据卡时,在将移动终端附着到网络的过程中向网络报告与短消息接收功能屏蔽有关的参数。 与传统技术相比,本发明的技术方案可以屏蔽短消息接收功能而不产生短消息费用,从而在很大程度上提高数据业务的稳定性,增加用户在选择业务时的灵活性 在终端上键入。
    • 8. 发明申请
    • PLANAR CELL ON CUT USING IN-SITU POLYMER DEPOSITION AND ETCH
    • 使用现场聚合物沉积和蚀刻的切片的平面细胞
    • US20110195578A1
    • 2011-08-11
    • US12703586
    • 2010-02-10
    • Angela T. HuiGang Xue
    • Angela T. HuiGang Xue
    • H01L21/3065
    • H01L27/11568H01L27/11565
    • A method and manufacture for charge storage layer separation is provided. A layer, such as a polymer layer, is deposited on top of an ONO layer so that the polymer layer is planarized, or approximately planarized. The ONO includes at least a first region and a second region, where the first region is higher than the second region. For example, the first region may be the portion of the ONO that is over the source/drain region, and the second region may be the portion of the ONO that is over the shallow trench. Etching is performed on the polymer layer to expose the first region of the ONO layer, leaving the second region of the ONO unexposed. The etching continues to occur to etch the exposed ONO at the first region so that the ONO layer is etched away in the first region and the second region remains unexposed.
    • 提供了一种电荷存储层分离的方法和制造方法。 诸如聚合物层的层沉积在ONO层的顶部上,使得聚合物层被平坦化或近似平坦化。 ONO包括至少第一区域和第二区域,其中第一区域高于第二区域。 例如,第一区域可以是在源极/漏极区域上的ONO的部分,并且第二区域可以是在浅沟槽上的ONO的部分。 在聚合物层上进行蚀刻以暴露ONO层的第一区域,留下ONO的第二区域未曝光。 蚀刻继续发生以蚀刻在第一区域处的暴露的ONO,使得ONO层在第一区域被蚀刻掉,并且第二区域保持未曝光。