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1. 发明授权

US08337715B2 CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于金属膜的CMP浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US08337715B2
公开(公告)日：2012-12-25
申请号：US12926358
申请日：2010-11-12
申请人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212 , H01L22/26
摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
摘要翻译：提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

2. 发明授权

US07825028B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07825028B2
公开(公告)日：2010-11-02
申请号：US12289271
申请日：2008-10-23
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： H01L21/02074 , H01L21/76826 , H01L21/76835 , H01L21/7684
摘要： Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.
摘要翻译：公开了一种半导体器件的制造方法，包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜，在层间绝缘膜中形成凹部，在具有凹陷以形成导电层，通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料，以在层间绝缘膜的表面露出，同时将导电材料留在凹槽中，并对具有凹陷的层间绝缘膜的表面进行填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。

3. 发明授权

US07198729B2 CMP slurry and method of manufacturing semiconductor device 失效
标题翻译： CMP浆料和半导体器件的制造方法
公开(公告)号：US07198729B2
公开(公告)日：2007-04-03
申请号：US10902940
申请日：2004-08-02
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： C09K13/00 , C09K13/04 , C09K13/06 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/7684
摘要： CMP slurry contains a polishing component to polish a region to be polished, which includes at least one of a sub-region made of insulative material and a sub-region made of conductive material, and a restoring component to restore a scratch caused on the region to be polished. The scratch can be thus reduced during the polishing.
摘要翻译： CMP浆料包含抛光部件以抛光待抛光区域，其包括由绝缘材料制成的子区域和由导电材料制成的子区域中的至少一个以及恢复部件以恢复在该区域上产生的划痕被抛光。在抛光期间可以减少划痕。

4. 发明申请

US20050218008A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20050218008A1
公开(公告)日：2005-10-06
申请号：US11051624
申请日：2005-01-27
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Nobuyuki Kurashima
IPC分类号： B24B37/00 , C25D7/12 , H01L21/00 , H01L21/02 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/768
CPC分类号： H01L21/6723 , H01L21/02074 , H01L21/3212 , H01L21/67219
摘要： Disclosed is a method for manufacturing a semiconductor device, comprising depositing an electrically conductive film on an insulating film formed above a semiconductor substrate and having a recessed portion, polishing the surface of the electrically conductive film constituting a processing surface with an alkaline slurry on a polishing cloth to expose the surface of the insulating film to the outside while leaving the electrically conductive film selectively within the recessed portion of the insulating film, treating the processing surface, in which the surface of the insulating film is exposed to the outside by the polishing treatment with the alkaline slurry, with a deionized water and, then, with an acidic washing solution so as to render the processing surface acidic, and transferring the semiconductor substrate from the position on the polishing cloth into a washing unit while keeping the processing surface acidic.
摘要翻译：公开了一种制造半导体器件的方法，包括在形成于半导体衬底上的绝缘膜上沉积导电膜并具有凹陷部分，在抛光时用碱性浆料抛光构成处理表面的导电膜的表面布将绝缘膜的表面露出到外部，同时将导电膜选择性地留在绝缘膜的凹陷部分内，通过抛光处理处理绝缘膜的表面暴露于外部的处理表面用碱性浆料，用去离子水，然后用酸性洗涤溶液使处理表面呈酸性，并将半导体衬底从抛光布上的位置转移到洗涤单元中，同时保持处理表面为酸性。

5. 发明授权

US06858539B2 Post-CMP treating liquid and method for manufacturing semiconductor device 有权
标题翻译：后CMP处理液和半导体装置的制造方法
公开(公告)号：US06858539B2
公开(公告)日：2005-02-22
申请号：US10330105
申请日：2002-12-30
申请人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
IPC分类号： H01L21/3205 , C09G1/02 , H01L21/02 , H01L21/304 , H01L21/321 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/02074 , C09G1/02 , H01L21/3212
摘要： There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and incorporated in the water. The post-CMP treating liquid exhibits a polishing rate both of an insulating film and a conductive film of 10 nm/min or less.
摘要翻译：公开了包含水的后CMP处理液，分散在水中的树脂粒子，在其表面具有官能团，或由水，分散在水中的树脂粒子构成的具有官能团的添加剂，水。后CMP处理液的绝缘膜和导电膜的抛光速度为10nm / min以下。

6. 发明授权

US07951717B2 Post-CMP treating liquid and manufacturing method of semiconductor device using the same 失效
标题翻译：后CMP处理液和使用其的半导体器件的制造方法
公开(公告)号：US07951717B2
公开(公告)日：2011-05-31
申请号：US11967584
申请日：2007-12-31
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L21/302 , H01L21/461 , C09K3/14 , C09G1/02
CPC分类号： H01L21/02074
摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译：提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，和四甲基氢氧化铵。另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。

7. 发明申请

US20110062374A1 CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于金属膜的CMP浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US20110062374A1
公开(公告)日：2011-03-17
申请号：US12926358
申请日：2010-11-12
申请人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212 , H01L22/26
摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
摘要翻译：提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

8. 发明申请

US20100093585A1 POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：使用其的半导体器件的后CMP处理液体和制造方法
公开(公告)号：US20100093585A1
公开(公告)日：2010-04-15
申请号：US12638607
申请日：2009-12-15
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： C11D1/74
CPC分类号： H01L21/02074 , C11D1/22 , C11D3/30 , C11D3/3765 , C11D11/0047
摘要： A post CMP treating liquid is provided, which includes water, resin particles having, on their surfaces, carboxylic group and sulfonyl group, and a primary particle diameter ranging from 10 to 60 nm, a first surfactant having carboxylic group, a second surfactant having sulfonyl group, and tetramethyl ammonium hydroxide. The resin particles are incorporated at a concentration ranging from 0.01 to 1 wt %. The treating liquid has a pH ranging from 4 to 9, and exhibits a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译：提供后CMP处理液，其包括水，其表面上具有羧基和磺酰基，一次粒径为10至60nm的树脂颗粒，具有羧基的第一表面活性剂，具有磺酰基的第二表面活性剂基团和四甲基氢氧化铵。树脂颗粒以0.01至1重量％的浓度掺入。处理液的pH为4〜9，并且以10nm / min以下的速度显示绝缘膜和导电膜的抛光速度。

9. 发明申请

US20060012047A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20060012047A1
公开(公告)日：2006-01-19
申请号：US11142235
申请日：2005-06-02
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L23/52
CPC分类号： H01L21/02074 , H01L21/76826 , H01L21/76835 , H01L21/7684
摘要： Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.
摘要翻译：公开了一种半导体器件的制造方法，包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜，在层间绝缘膜中形成凹部，在具有凹陷以形成导电层，通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料，以在层间绝缘膜的表面露出，同时将导电材料留在凹槽中，并对具有凹陷的层间绝缘膜的表面进行填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。

10. 发明授权

US08174125B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08174125B2
公开(公告)日：2012-05-08
申请号：US12412811
申请日：2009-03-27
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L23/48
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76832 , H01L21/7684 , H01L23/522 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.
摘要翻译：半导体器件的制造方法包括：提供相对介电常数在基板上方至多预定值的第一绝缘膜; 提供在所述第一绝缘膜的表面上相对介电常数大于所述预定值的第二绝缘膜; 通过所述第二绝缘膜形成用于电线的凹槽并延伸到所述第一绝缘膜中，并且还通过所述第二绝缘膜形成用于虚拟线的凹槽并且延伸到与所述凹部的形成区域间隔开的所述第一绝缘膜中，线; 在用于线的凹槽内部和用于虚拟线的凹槽内提供导电材料; 并且在所述凹槽内提供用于所述导线的线，并且通过抛光和去除所述导电材料在所述虚拟线的所述凹部内部提供虚拟线。

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