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1. 发明申请

US20170053965A1 MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US20170053965A1
公开(公告)日：2017-02-23
申请号：US15158981
申请日：2016-05-19
申请人： GWANG-HYUN BAEK , lnho KIM , Jong-Kyu KIM , Jongchul PARK , Jung-lk OH
发明人： GWANG-HYUN BAEK , lnho KIM , Jong-Kyu KIM , Jongchul PARK , Jung-lk OH
IPC分类号： H01L27/22 , H01L43/08 , H01L23/528 , H01L43/12 , G11C11/16 , H01L43/02 , H01L43/10
CPC分类号： H01L27/228 , G11C11/161 , H01L23/528 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A memory device including a substrate, an insulating layer on the substrate, the insulating layer including a first region having a first top surface and a second region having a second top surface, the second top surface being lower than the first top surface with respect to the substrate, the first region including a first through hole penetrating therethrough, the second region including a second through hole penetrating therethrough, a first conductive pattern filling the first through hole, a second conductive pattern at least partially filling the second through hole, a magnetic tunnel junction pattern on the first conductive pattern, and a contact plug coupled to the second conductive pattern may be provided. Further, a method of fabricating the memory device also may be provided.
摘要翻译：一种存储器件，包括衬底，衬底上的绝缘层，所述绝缘层包括具有第一顶表面的第一区域和具有第二顶表面的第二区域，所述第二顶表面相对于所述第一顶表面低于所述第一顶表面所述第一区域包括穿透其中的第一通孔，所述第二区域包括贯穿其中的第二通孔，填充所述第一通孔的第一导电图案，至少部分地填充所述第二通孔的第二导电图案，可以提供第一导电图案上的隧道结图案和耦合到第二导电图案的接触插塞。此外，还可以提供一种制造存储器件的方法。

2. 发明申请

US20170062709A1 METHOD FOR FORMING PATTERNS AND METHOD FOR MANUFACTURING MAGNETIC MEMORY DEVICE USING THE SAME 有权
标题翻译：用于形成图案的方法和使用该方法制造磁记忆体装置的方法
公开(公告)号：US20170062709A1
公开(公告)日：2017-03-02
申请号：US15180843
申请日：2016-06-13
申请人： Sang-Kuk KIM , Jong-Kyu KIM , Jongchul PARK , Inho KIM , Gwang-Hyun BAEK , Jung-Ik OH
发明人： Sang-Kuk KIM , Jong-Kyu KIM , Jongchul PARK , Inho KIM , Gwang-Hyun BAEK , Jung-Ik OH
IPC分类号： H01L43/12 , H01L43/10 , G11C11/16 , H01L43/08 , H01L43/02
CPC分类号： H01L43/12 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A method for forming a pattern, the method including forming an etch target layer on a substrate; patterning the etch target layer to form patterns; and performing a pre-oxidation trim process a plurality of times, the pre-oxidation trim process including performing an oxidation process to form an insulating layer on a sidewall of each of the patterns; and performing a sputter etch process to remove at least a portion of the insulating layer.
摘要翻译：一种用于形成图案的方法，所述方法包括在基底上形成蚀刻目标层; 图案化蚀刻目标层以形成图案; 并且进行预氧化修饰过程多次，所述预氧化修剪处理包括进行氧化处理以在每个图案的侧壁上形成绝缘层; 以及执行溅射蚀刻工艺以去除所述绝缘层的至少一部分。

3. 发明申请

US20170098759A1 SEMICONDUCTOR DEVICE HAVING MAGNETIC TUNNEL JUNCTION STRUCTURE AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：US20170098759A1
公开(公告)日：2017-04-06
申请号：US15220719
申请日：2016-07-27
申请人： Jung-Ik OH , Jong-Kyu KIM , Jongchul PARK , Gwang-Hyun BAEK , Kyungrae BYUN , Hyun-Woo YANG
发明人： Jung-Ik OH , Jong-Kyu KIM , Jongchul PARK , Gwang-Hyun BAEK , Kyungrae BYUN , Hyun-Woo YANG
IPC分类号： H01L43/02 , H01L27/22 , H01L43/12 , H01L43/08 , H01L43/10
CPC分类号： H01L43/02 , H01L43/08 , H01L43/12
摘要： A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.

4. 发明申请

US20180069176A1 ION BEAM APPARATUSES AND METHODS FOR FORMING PATTERNS USING THE SAME, AND METHODS FOR MANUFACTURING MAGNETIC MEMORY DEVICES USING THE SAME. 审中-公开
公开(公告)号：US20180069176A1
公开(公告)日：2018-03-08
申请号：US15608212
申请日：2017-05-30
申请人： Yil-hyung LEE , Jong-Kyu KIM , Jongchul PARK , Sang-Kuk KIM , Jongsoon PARK , Hyeji YOON , Woohyun LEE
发明人： Yil-hyung LEE , Jong-Kyu KIM , Jongchul PARK , Sang-Kuk KIM , Jongsoon PARK , Hyeji YOON , Woohyun LEE
IPC分类号： H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , H01L27/222
摘要： An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.

5. 发明申请

US20170352801A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
公开(公告)号：US20170352801A1
公开(公告)日：2017-12-07
申请号：US15429494
申请日：2017-02-10
申请人： Yil-hyung Lee , Jong-Kyu KIM , Jongsoon PARK , Jongchul PARK
发明人： Yil-hyung Lee , Jong-Kyu KIM , Jongsoon PARK , Jongchul PARK
IPC分类号： H01L43/08 , H01L43/02
CPC分类号： H01L43/08 , H01L27/228 , H01L43/02
摘要： A semiconductor memory device that includes at least a lower contact plug on a semiconductor substrate, a magnetic tunnel junction of the lower contact plug, and a barrier pattern on a sidewall of the lower contact plug may further include an insulation pattern on the sidewall of the lower contact plug. The insulation pattern may be between the barrier pattern and the magnetic tunnel junction pattern. The insulation pattern may include an upper portion and a lower portion whose width is greater than a width of the upper portion.

6. 发明申请

US20170345869A1 DATA STORAGE DEVICES 有权
公开(公告)号：US20170345869A1
公开(公告)日：2017-11-30
申请号：US15431234
申请日：2017-02-13
申请人： Jongsoon PARK , Sang-Kuk KIM , Jong-Kyu KIM , Jongchul PARK , Woohyun LEE , Yil-hyung LEE
发明人： Jongsoon PARK , Sang-Kuk KIM , Jong-Kyu KIM , Jongchul PARK , Woohyun LEE , Yil-hyung LEE
IPC分类号： H01L27/22 , H01L43/08 , H01L43/02 , H01L43/10 , G11C11/16
CPC分类号： H01L27/222 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Data storage devices are provided. A data storage device includes a dielectric layer on a substrate. The data storage device includes a plurality of data storage structures on the dielectric layer. The data storage device includes a conductive material on the dielectric layer. Moreover, the data storage device includes an insulation layer on the conductive material.

7. 发明申请

US20170092465A1 ION BEAM ETCHING DEVICES 审中-公开
公开(公告)号：US20170092465A1
公开(公告)日：2017-03-30
申请号：US15198416
申请日：2016-06-30
申请人： HAN-NA CHO , Jong-Kyu KIM , Hyuk KIM , Jongchul PARK
发明人： HAN-NA CHO , Jong-Kyu KIM , Hyuk KIM , Jongchul PARK
IPC分类号： H01J37/32
CPC分类号： H01J37/32009 , H01J37/32357 , H01J37/32403 , H01J37/32422 , H01J37/3266 , H01J37/32669 , H01J37/32715
摘要： An ion beam etching device comprises: an ion source configured to generate ions; a grid on a side of the ion source, the grid configured to accelerate the generated ions to generate an ion beam; a process chamber configured to have an etching process using the ion beam performed therein; and a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field.

8. 发明申请

US20170069526A1 CHUCK ASSEMBLY WITH TILTABLE CHUCK AND SEMICONDUCTOR FABRICATION SYSTEM INCLUDING THE SAME 审中-公开
标题翻译：具有可折叠式卡盘和包括其中的半导体制造系统的卡盘组件
公开(公告)号：US20170069526A1
公开(公告)日：2017-03-09
申请号：US15170151
申请日：2016-06-01
申请人： Jongsoon PARK , Jong-Kyu KIM , Jung-Ik OH , Sang-Kuk KIM , Jongchul PARK
发明人： Jongsoon PARK , Jong-Kyu KIM , Jung-Ik OH , Sang-Kuk KIM , Jongchul PARK
IPC分类号： H01L21/687 , H01J37/305 , H01L21/263
CPC分类号： H01L21/68764 , H01J37/20 , H01J37/3056 , H01J2237/20207 , H01J2237/20214 , H01J2237/31 , H01L21/2633 , H01L21/68792
摘要： A chuck assembly includes a chuck to hold a substrate, and a pillar coupled to the chuck to support the chuck, an axis of the pillar passing through a center of the pillar in a longitudinal direction of the pillar, wherein the chuck has a top surface, which is inclined with respect to the axis of the pillar, the top surface of the chuck being precessionally rotatable about the axis of the pillar.
摘要翻译：卡盘组件包括夹持基板的卡盘，以及联接到卡盘以支撑卡盘的支柱，支柱的轴线沿着柱的纵向方向穿过柱的中心，其中卡盘具有顶表面，其相对于柱的轴线倾斜，卡盘的顶表面可以围绕柱的轴线进行旋转。

9. 发明申请

US20120225554A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING BOWING PREVENTION FILM 审中-公开
标题翻译：使用预防膜制造半导体器件的方法
公开(公告)号：US20120225554A1
公开(公告)日：2012-09-06
申请号：US13409169
申请日：2012-03-01
申请人： Kukhan YOON , Cheolkyu LEE , Junsoo LEE , Jong-Kyu KIM , Seong-Mo KOO , Ki-jin PARK
发明人： Kukhan YOON , Cheolkyu LEE , Junsoo LEE , Jong-Kyu KIM , Seong-Mo KOO , Ki-jin PARK
IPC分类号： H01L21/768
CPC分类号： H01L21/76802 , H01L27/10814 , H01L27/10852 , H01L28/90
摘要： A method of manufacturing a semiconductor device, the method including sequentially forming a lower material film, a middle material film, and an upper material film on a semiconductor substrate; and forming an opening that vertically penetrates the upper material film, the middle material film, and the lower material film by etching the upper material film, the middle material film, and the lower material film, wherein the middle material film and the upper material film are formed of material films having etch rates lower than an etch rate of the lower material film with respect to an etchant for etching the lower material film.
摘要翻译：一种制造半导体器件的方法，所述方法包括在半导体衬底上顺序地形成下部材料膜，中间材料膜和上部材料膜; 并且通过蚀刻上部材料膜，中间材料膜和下部材料膜形成垂直地穿透上部材料膜，中间材料膜和下部材料膜的开口，其中中间材料膜和上部材料膜由具有低于下部材料膜相对于用于蚀刻下部材料膜的蚀刻剂的蚀刻速率的蚀刻速率的材料膜形成。

10. 发明申请

US20090014833A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090014833A1
公开(公告)日：2009-01-15
申请号：US12171066
申请日：2008-07-10
申请人： Kuk-Han YOON , Jong-Kyu KIM , Sang-Sup JEONG , Sung-Gil CHOI , Tae-Hyuk AHN
发明人： Kuk-Han YOON , Jong-Kyu KIM , Sang-Sup JEONG , Sung-Gil CHOI , Tae-Hyuk AHN
IPC分类号： H01L27/08
CPC分类号： H01L28/90 , H01L27/10852
摘要： An exemplary semiconductor device includes a semiconductor substrate on which lower electrodes are formed. The lower electrodes are arranged in an array including a rows extending substantially parallel to one another along a first direction. A stripe-shaped capacitor support pad is interposed between a pair of adjacent ones of the rows and is connected to lower electrodes in the pair of adjacent ones of the rows. The semiconductor device may include plurality of capacitors each including a one of the lower electrodes, a dielectric film, and an upper electrode. An upper end of the capacitor support pad is below the upper ends of the lower electrodes. A portion of the stripe-shaped capacitor support pad is interposed between adjacent ones of lower electrodes included within at least one of the rows and is connected to the adjacent ones of lower electrodes included within the at least one of the rows.
摘要翻译：示例性的半导体器件包括其上形成有下电极的半导体衬底。下电极被布置成包括沿着第一方向彼此基本平行延伸的行的阵列。条形电容器支撑垫插入在一对相邻行之间，并且连接到该对相邻行中的下电极。半导体器件可以包括多个电容器，每个电容器包括下电极中的一个，电介质膜和上电极。电容器支撑垫的上端位于下部电极的上端的下方。条形电容器支撑垫的一部分介于包括在至少一行内的相邻的下电极之间，并且连接到包括在至少一行内的相邻的下电极。

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