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1. 发明申请

US20090014833A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090014833A1
公开(公告)日：2009-01-15
申请号：US12171066
申请日：2008-07-10
申请人： Kuk-Han YOON , Jong-Kyu KIM , Sang-Sup JEONG , Sung-Gil CHOI , Tae-Hyuk AHN
发明人： Kuk-Han YOON , Jong-Kyu KIM , Sang-Sup JEONG , Sung-Gil CHOI , Tae-Hyuk AHN
IPC分类号： H01L27/08
CPC分类号： H01L28/90 , H01L27/10852
摘要： An exemplary semiconductor device includes a semiconductor substrate on which lower electrodes are formed. The lower electrodes are arranged in an array including a rows extending substantially parallel to one another along a first direction. A stripe-shaped capacitor support pad is interposed between a pair of adjacent ones of the rows and is connected to lower electrodes in the pair of adjacent ones of the rows. The semiconductor device may include plurality of capacitors each including a one of the lower electrodes, a dielectric film, and an upper electrode. An upper end of the capacitor support pad is below the upper ends of the lower electrodes. A portion of the stripe-shaped capacitor support pad is interposed between adjacent ones of lower electrodes included within at least one of the rows and is connected to the adjacent ones of lower electrodes included within the at least one of the rows.
摘要翻译：示例性的半导体器件包括其上形成有下电极的半导体衬底。下电极被布置成包括沿着第一方向彼此基本平行延伸的行的阵列。条形电容器支撑垫插入在一对相邻行之间，并且连接到该对相邻行中的下电极。半导体器件可以包括多个电容器，每个电容器包括下电极中的一个，电介质膜和上电极。电容器支撑垫的上端位于下部电极的上端的下方。条形电容器支撑垫的一部分介于包括在至少一行内的相邻的下电极之间，并且连接到包括在至少一行内的相邻的下电极。

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