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    • 3. 发明申请
    • TEXTURE COATING WITH ETCHING-BLOCKING LAYER FOR THIN-FILM SOLAR CELLS AND/OR METHODS OF MAKING THE SAME
    • 用于薄膜太阳能电池的蚀刻阻挡层的纹理涂层和/或其制造方法
    • WO2012091900A3
    • 2012-10-26
    • PCT/US2011064354
    • 2011-12-12
    • GUARDIAN INDUSTRIESKRASNOV ALEXEYDEN BOER WILLEM
    • KRASNOV ALEXEYDEN BOER WILLEM
    • H01L31/0236H01L31/0224
    • H01L31/03921H01L31/022475H01L31/022483H01L31/0236H01L31/02366Y02E10/50
    • Certain example embodiments of this invention relate to a front electrode for solar cell devices (e.g., amorphous silicon or a-Si solar cell devices), and/or methods of making the same. Advantageously, certain example embodiments include a layer that acts as an etch-stop layer. In certain example embodiments, the blocking layer is provided between a transparent conductive oxide layer including AZO and a conductive layer. In certain example embodiments, a weak acid may be used to texture the layer including AZO. A semiconductor may be provided over the textured layer including AZO. The blocking layer provided between the layer of AZO and the IR reflecting layer may be more resistant to etching by weak acids than the layer based on AZO. Therefore, in certain example embodiments, the blocking layer may substantially reduce the risk of the semiconductor coming into contact with the conductive layer (which may be based on Ag).
    • 本发明的一些示例性实施例涉及一种用于太阳能电池器件(例如,非晶硅或a-Si太阳能电池器件)的前电极和/或其制造方法。 有利地,某些示例实施例包括用作蚀刻停止层的层。 在某些示例性实施例中,阻挡层设置在包括AZO的透明导电氧化物层和导电层之间。 在某些示例性实施方案中,弱酸可用于织构包括AZO的层。 可以在包括AZO的织构化层上提供半导体。 设置在AZO层和IR反射层之间的阻挡层可以比基于AZO的层更耐弱酸蚀刻。 因此,在某些示例性实施例中,阻挡层可以显着降低半导体与导电层(其可以基于Ag)接触的风险。
    • 6. 发明申请
    • FRONT ELECTRODE HAVING ETCHED SURFACE FOR USE IN PHOTOVOLTAIC DEVICE AND METHOD OF MAKING SAME
    • 具有用于光伏器件的蚀刻表面的前电极及其制造方法
    • WO2010039341A3
    • 2011-01-20
    • PCT/US2009053978
    • 2009-08-17
    • GUARDIAN INDUSTRIESDEN BOER WILLEMKRASNOV ALEXEYVANDERPLOEG JOHN A
    • DEN BOER WILLEMKRASNOV ALEXEYVANDERPLOEG JOHN A
    • H01L31/18
    • H01L31/1884H01L31/022466H01L31/0236Y02E10/50
    • This invention relates to a photovoltaic (PV) device including an electrode such as a front electrode/contact (3), and a method of making the same. The front electrode (3). has a textured (e.g. etched) surface that faces the photovoltaic semiconductor film of the PV device. The front electrode is formed on a flat or substantially flat (non- textured) surface of a glass substrate (1), e.g. via sputtering, and comprises a transparent conductive oxide (TCO) layer (4e). The major surface of the TCO layer (40) closest to the semiconductor film (5a) is textured (e.g. via etching). In certain example embodiments, a combination of two or more different etchants can be used in order to provide the TCO layer (4e) with a textured surface having at least two different feature sizes. In completing manufacture of the PV device, the etched surface of the TCO layer (4e) faces the active semiconductor film of the PV device.
    • 本发明涉及包括诸如前电极/触点(3)的电极的光伏(PV)装置及其制造方法。 前电极(3)。 具有面向PV器件的光电半导体膜的有纹理(例如蚀刻)的表面。 前电极形成在玻璃基板(1)的平坦或基本上平坦的(非纹理的)表面上,例如, 并且包括透明导电氧化物(TCO)层(4e)。 最接近半导体膜(5a)的TCO层(40)的主表面被纹理化(例如通过蚀刻)。 在某些示例性实施例中,可以使用两种或更多种不同蚀刻剂的组合,以便为TCO层(4e)提供具有至少两种不同特征尺寸的纹理表面。 在完成PV器件的制造中,TCO层(4e)的蚀刻表面面向PV器件的有源半导体膜。
    • 9. 发明申请
    • HIGH HAZE TRANSPARENT CONTACT INCLUDING ION-BEAM TREATED LAYER FOR SOLAR CELLS, AND/OR METHOD OF MAKING THE SAME
    • 具有包括用于太阳能电池的离子束处理层的高密度透明接触和/或制造其的方法
    • WO2011056207A3
    • 2012-07-19
    • PCT/US2010002860
    • 2010-10-28
    • GUARDIAN INDUSTRIESKRASNOV ALEXEY
    • KRASNOV ALEXEY
    • H01L31/18H01L31/0224
    • H01L31/022466C23C14/086C23C14/5806C23C14/5853H01L31/022475H01L31/022483H01L31/02366H01L31/1884Y02E10/50
    • Certain example embodiments of this invention relate to a front transparent conductive electrode for solar cell devices (e.g., amorphous silicon or a-Si solar cell devices), and/or methods of making the same. Advantageously, certain example embodiments enable high haze to be realized in the top layer of the thin film stack. In certain example embodiments, an insertion layer comprising ITO or AZO is provided between a layer of AZO and a layer of ITO. The AZO may be deposited at room temperature. The insertion layer is provided with an oxygen content selected so that the insertion layer sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided. In certain example embodiments, the layer of ITO may be ion-beam treated so as to roughen a surface thereof. The ion beam treating may be performed a voltage sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided.
    • 本发明的一些示例性实施例涉及用于太阳能电池器件(例如,非晶硅或a-Si太阳能电池器件)的前透明导电电极和/或其制造方法。 有利地,某些示例性实施例使得能够在薄膜堆叠的顶层中实现高雾度。 在某些示例性实施例中,包括ITO或AZO的插入层设置在AZO层和ITO层之间。 AZO可以在室温下沉积。 提供了插入层,其选择的氧含量使得插入层足以改变与没有设置插入层的情况相比AZO层的结晶生长。 在某些示例性实施例中,ITO层可以进行离子束处理以使其表面变粗糙。 与不提供插入层的情况相比,离子束处理可以进行足以改变AZO层的结晶生长的电压。