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    • 1. 发明申请
    • ENCAPSULATED WAFER PROCESSING DEVICE AND PROCESS FOR MAKING THEREOF
    • 封装的加工设备及其制造方法
    • WO2006052576A2
    • 2006-05-18
    • PCT/US2005/039593
    • 2005-11-02
    • GENERAL ELECTRIC COMPANYSCHAEPKENS, MarcTOGAWA, Takayuki
    • SCHAEPKENS, MarcTOGAWA, Takayuki
    • H01L21/6833H01L21/67103H01L21/67109H01L21/6831
    • A wafer processing device for use in semiconductor wafer processing applications as an Electro-Static Chuck (ESC) comprising a graphite substrate ans at least one electrode pattern, wherein the grooves in the electrode pattern are filled with insulating or semiconducting material selected from a group consisting of B, A1, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or complexes and / or combinations thereof, forming a substantially planar surface. The substantially planar surface is then coated with at least a semiconducting layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, A, Si, Ga, refractory hard metals, transition metals, and rare earth metals, or complexes and / or combinations thereof.
    • 一种用于半导体晶片处理应用的晶片处理装置,包括石墨基板和至少一个电极图案,其中电极图案中的凹槽填充有绝缘或半导体材料,绝缘或半导体材料选自 B,A1,Si,Ga,难熔硬金属,过渡金属和稀土金属,或其复合物和/或其组合,形成基本平坦的表面。 然后用至少一个半导体层涂覆基本上平坦的表面,该半导体层包括选自由B,A,Si,Ga,耐火硬金属,过渡金属和过渡金属组成的组中的元素的氮化物,碳化物,碳氮化物或氮氧化物中的至少一种 稀土金属或其配合物和/或其组合。
    • 4. 发明申请
    • APPARATUS AND METHOD FOR PLASMA TREATING AN ARTICLE
    • 用于等离子处理物品的装置和方法
    • WO2005096345A1
    • 2005-10-13
    • PCT/US2004/006234
    • 2004-03-01
    • GENERAL ELECTRIC COMPANYSCHAEPKENS, MarcIACOVANGELO, Charles, DominicJOHNSON, James, NeilMORRISON, William, Arthur
    • SCHAEPKENS, MarcIACOVANGELO, Charles, DominicJOHNSON, James, NeilMORRISON, William, Arthur
    • H01J37/32
    • H01J37/32357H01J37/32055
    • The invention provides a plasma source (102) in which a gap (110) (i.e. cathode-to-anode distance) is adjustable in real time to a desired distance in response to selected conditions within a plasma chamber (104). At least one sensor (116) monitors and detects any change in such conditions within the plasma chamber (104). An apparatus (100) comprising at least one plasma source (102) generates at least one plasma that is stable and adjustable in real time. In one embodiment, the apparatus (100) includes multiple plasma sources (102) that can either be “tuned in real time to generate plasmas that are similar to each or, conversely, “detuned” to generate dissimilar plasmas. The apparatus (100) may be used to provide plasma treatment - such as, but not limited to, coating, etching and activation - for an article (160). Methods of providing such plasmas and treating an article (160) using such plasmas are also disclosed.
    • 本发明提供等离子体源(102),其中响应于等离子体室(104)内的选定条件,间隙(110)(即阴极至阳极距离)可实时调节到所需距离。 至少一个传感器(116)监测和检测等离子体室(104)内的这种状况的任何变化。 包括至少一个等离子体源(102)的装置(100)产生稳定且可实时调节的至少一个等离子体。 在一个实施例中,装置(100)包括多个等离子体源(102),其可以“实时调谐”以产生类似于每个等离子体或相反地“失谐”以产生不相似的等离子体。 也可以用于为制品(160)提供等离子体处理,例如但不限于涂层,蚀刻和激活。提供这种等离子体并使用这种等离子体处理制品(160)的方法也被公开。