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1. 发明申请

WO2005096345A1 APPARATUS AND METHOD FOR PLASMA TREATING AN ARTICLE 审中-公开
标题翻译：用于等离子处理物品的装置和方法
公开(公告)号：WO2005096345A1
公开(公告)日：2005-10-13
申请号：PCT/US2004/006234
申请日：2004-03-01
申请人： GENERAL ELECTRIC COMPANY , SCHAEPKENS, Marc , IACOVANGELO, Charles, Dominic , JOHNSON, James, Neil , MORRISON, William, Arthur
发明人： SCHAEPKENS, Marc , IACOVANGELO, Charles, Dominic , JOHNSON, James, Neil , MORRISON, William, Arthur
IPC分类号： H01J37/32
CPC分类号： H01J37/32357 , H01J37/32055
摘要： The invention provides a plasma source (102) in which a gap (110) (i.e. cathode-to-anode distance) is adjustable in real time to a desired distance in response to selected conditions within a plasma chamber (104). At least one sensor (116) monitors and detects any change in such conditions within the plasma chamber (104). An apparatus (100) comprising at least one plasma source (102) generates at least one plasma that is stable and adjustable in real time. In one embodiment, the apparatus (100) includes multiple plasma sources (102) that can either be “tuned in real time to generate plasmas that are similar to each or, conversely, “detuned” to generate dissimilar plasmas. The apparatus (100) may be used to provide plasma treatment - such as, but not limited to, coating, etching and activation - for an article (160). Methods of providing such plasmas and treating an article (160) using such plasmas are also disclosed.
摘要翻译：本发明提供等离子体源（102），其中响应于等离子体室（104）内的选定条件，间隙（110）（即阴极至阳极距离）可实时调节到所需距离。至少一个传感器（116）监测和检测等离子体室（104）内的这种状况的任何变化。包括至少一个等离子体源（102）的装置（100）产生稳定且可实时调节的至少一个等离子体。在一个实施例中，装置（100）包括多个等离子体源（102），其可以“实时调谐”以产生类似于每个等离子体或相反地“失谐”以产生不相似的等离子体。也可以用于为制品（160）提供等离子体处理，例如但不限于涂层，蚀刻和激活。提供这种等离子体并使用这种等离子体处理制品（160）的方法也被公开。

2. 发明申请

WO2007018934A2 COMPOSITIONALLY-GRADED PHOTOVOLTAIC DEVICE AND FABRICATION METHOD, AND RELATED ARTICLES 审中-公开
标题翻译：组合级光电器件和制造方法及相关文章
公开(公告)号：WO2007018934A2
公开(公告)日：2007-02-15
申请号：PCT/US2006/027065
申请日：2006-07-11
申请人： GENERAL ELECTRIC COMPANY , JOHNSON, James, Neil , MANIVANNAN, Venkatesan
发明人： JOHNSON, James, Neil , MANIVANNAN, Venkatesan
IPC分类号： H01L31/072
CPC分类号： H01L31/075 , H01L31/065 , H01L31/072 , H01L31/0747 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A semiconductor structure is described, including a semiconductor substrate of one conductivity type; and an amorphous semiconductor layer disposed on at least one of its surfaces. The amorphous semiconductor layer is compositionally graded through its depth, from substantially intrinsic at the interface with the substrate, to substantially conductive at the opposite side. Photovoltaic devices which include such a structure are also disclosed, as are solar modules made from one or more of the devices. Related methods are also described.
摘要翻译：描述了一种半导体结构，包括一种导电类型的半导体衬底; 以及设置在其至少一个表面上的非晶半导体层。非晶半导体层在其与衬底的界面处的本质上在其深度上被组成分级，在相对侧基本上是导电的。还公开了包括这种结构的光伏器件，以及由一个或多个器件制成的太阳能模块也是如此。还描述了相关方法。

3. 发明公开

EP1733411A1 APPARATUS AND METHOD FOR PLASMA TREATING AN ARTICLE 审中-公开
标题翻译：装置和方法的等离子处理的物品
公开(公告)号：EP1733411A1
公开(公告)日：2006-12-20
申请号：EP04716162.5
申请日：2004-03-01
申请人： GENERAL ELECTRIC COMPANY
发明人： SCHAEPKENS, Marc , IACOVANGELO, Charles, Dominic , JOHNSON, James, Neil , MORRISON, William, Arthur
IPC分类号： H01J37/32 , H05H1/32
CPC分类号： H01J37/32357 , H01J37/32055
摘要： The invention provides a plasma source (102) in which a gap (110) (i.e. cathode-to-anode distance) is adjustable in real time to a desired distance in response to selected conditions within a plasma chamber (104). At least one sensor (116) monitors and detects any change in such conditions within the plasma chamber (104). An apparatus (100) comprising at least one plasma source (102) generates at least one plasma that is stable and adjustable in real time. In one embodiment, the apparatus (100) includes multiple plasma sources (102) that can either be “tuned in real time to generate plasmas that are similar to each or, conversely, “detuned” to generate dissimilar plasmas. The apparatus (100) may be used to provide plasma treatment - such as, but not limited to, coating, etching and activation - for an article (160). Methods of providing such plasmas and treating an article (160) using such plasmas are also disclosed.

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