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    • 1. 发明申请
    • METHOD AND SYSTEM FOR PRECISELY POSITIONING A WAIST OF A MATERIAL-PROCESSING LASER BEAM TO PROCESS MICROSTRUCTURES WITHIN A LASER-PROCESSING SITE
    • 用于精确定位材料加工激光束以在激光加工站中处理微结构的方法和系统
    • WO0187534A2
    • 2001-11-22
    • PCT/US0115552
    • 2001-05-15
    • GEN SCANNING INCHUNTER BRADLEY LCAHILL STEVEN PEHRMANN JONATHAN SPLOTKIN MICHAEL
    • HUNTER BRADLEY LCAHILL STEVEN PEHRMANN JONATHAN SPLOTKIN MICHAEL
    • B23K26/04B23K26/08B23K101/40G03F7/20H01L21/82B23K26/00
    • B23K26/046B23K26/02B23K26/04B23K26/043B23K26/0853B23K2201/40G03F7/70041G03F7/70725
    • A high-speed method and system for precisely positioning a waist of a material-processing laser beam to dynamically compensate for local variations in height of microstructures located on a plurality of objects spaced apart within a laser-processing site are provided. In the preferred embodiment, the microstructures are a plurality of conductive lines formed on a plurality of memory dice of a semiconductor wafer. The system includes a focusing lens subsystem for focusing a laser beam along an optical axis substantially orthogonal to a plane, an x-y stage for moving the wafer in the plane, and a first air bearing sled for moving the focusing lens subsystem along the optical axis. The system also includes a first controller for controlling the x-y stage based on reference data which represents 3-D locations of microstrucutures to be processed within the site, a second controller, and a first voice coil coupled to the second controller for positioning the first air bearing sled along the optical axis also based on the reference data. The reference data is generated by the system which includes a modulator for reducing power of the material-processing laser beam to obtain a probe laser beam to measure height of the semiconductor wafer at a plurality of locations about the site to obtain reference height data. A computer computes a reference surface based on the reference height data. A trajectory planner generates trajectories for the wafer and the waist of the laser beam based on the reference surface. The x-y stage and the first air bearing sled controllably move the wafer and the focusing lens subsystem, respectively, to precisely position the waist of the laser beam so that the waist substantially coincides with the 3-D locations of the microstructures within the site. The system also includes a spot size lens subsystem for controlling size of the waist of the laser beam, a second air bearing sled for moving the spot size lens subsystem along the optical axis, a third controller for controlling the second air bearing sled, and a second voice coil coupled to the third controller for positioning the second air bearing sled along the optical axis.
    • 提供了一种用于精确定位材料处理激光束的腰部以动态地补偿位于激光加工部位内间隔开的多个物体上的微结构的局部高度变化的高速方法和系统。 在优选实施例中,微结构是形成在半导体晶片的多个存储芯片上的多条导线。 该系统包括聚焦透镜子系统,用于沿着基本上垂直于平面的光轴聚焦激光束,用于在平面中移动晶片的x-y级,以及用于沿着光轴移动聚焦透镜子系统的第一空气轴承滑座。 该系统还包括第一控制器,用于基于参考数据来控制xy阶段,所述参考数据表示在站点内处理的微结构的3-D位置,第二控制器和耦合到第二控制器的第一音圈,用于将第一空气 沿着光轴的轴承座也基于参考数据。 参考数据由包括用于降低材料处理激光束的功率的调制器的系统产生,以获得探针激光束,以测量位于该位置的多个位置处的半导体晶片的高度,以获得参考高度数据。 计算机根据参考高度数据计算参考曲面。 轨迹计划器基于参考表面产生晶片和激光束的腰部的轨迹。 x-y台和第一空气轴承滑轨分别可控地移动晶片和聚焦透镜子系统,以精确地定位激光束的腰部,使得腰部基本上与位置内的微结构的3-D位置重合。 该系统还包括用于控制激光束腰部尺寸的光斑尺寸透镜子系统,用于沿光轴移动光斑尺寸透镜子系统的第二空气轴承滑动件,用于控制第二空气轴承滑轨的第三控制器,以及 第二音圈耦合到第三控制器,用于沿着光轴定位第二空气轴承滑轨。
    • 6. 发明专利
    • DE69933224D1
    • 2006-10-26
    • DE69933224
    • 1999-06-22
    • GEN SCANNING INC
    • CORDINGLEY JSMART VPLOTKIN MICHAELLAUER WILLIAM
    • G02B5/30H01S3/10B23K26/00B23K26/06B23K26/073B23K101/40G02B27/28G02F1/13H01S3/11H01S3/115
    • A laser polarization control apparatus includes a polarization modifying device, such as a liquid crystal variable retarder, and a controller. The polarization modifying device receives a laser beam and modifies the polarization of the laser beam. The controller, which is connected to the polarization modifying device, adjusts an input to the polarization modifying device in order to control modification of the polarization of the laser beam based on alignment of a structure to be processed by the laser beam. For example, the polarization of the laser beam may be rotated to correspond with the alignment of a link in a semiconductor device to be cut by the laser beam. The polarization modifying device is configured for incorporation into a laser processing system that produces the laser beam received by the polarization modifying device and that focuses the laser beam modified by the polarization modifying device onto a workpiece that includes the structure to be processed by the laser beam. An analyzer tool receives the laser beam modified by the polarization modification device and measures the modification of the polarization of the laser beam by the polarization modification device.