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    • 10. 发明授权
    • Ceramic composition for reduction-reoxidation type semiconductive
capacitor
    • 用于还原再氧化型半导体电容器的陶瓷组合物
    • US4987107A
    • 1991-01-22
    • US360607
    • 1989-06-02
    • Kazuhito NarumiFumio TakeuchiMichiaki Sakaguchi
    • Kazuhito NarumiFumio TakeuchiMichiaki Sakaguchi
    • C04B35/46C04B35/468H01B3/12H01G4/12
    • H01G4/1272C04B35/4682
    • A ceramic composition for a reduction-reoxidation type semiconductive capacitor, comprising (A) barium titanate or barium titanate and strontium titanate, (B) titanium oxide, and (C) at least one oxide selected from the group consisting of the oxides severally of La, Ce, Nb, Nd, Dy, Y, Sb, W, and Ta in a molar ratio of 100:0.01.about.15:0.01.about.10 and further comprising (D) 0.001 to 1% by weight, based on the total amount of the compounds, (A), (B), and (C), of at least one oxide selected from the group consisting of the oxides severally of Cu, Zn, Al, Mg, and Mo and exhibiting a breakdown voltage of not less than 900 V, and insulation resistance of not less than 10.sup.10 .OMEGA., an electrostatic capacity per unit surface area of not less than 0.06 .mu.F/cm.sup.2, and a low dielectric loss, tan .delta., of not more than 2.0%.
    • 一种还原再氧化型半导体电容器用陶瓷组合物,其特征在于,含有(A)钛酸钡或钛酸钡,钛酸锶,(B)氧化钛,(C)选自氧化物中的至少一种氧化物,分别为La ,Ce,Nb,Nd,Dy,Y,Sb,W和Ta以摩尔比为100:0.01差异为15:0.01差异10,并且还包含(D)0.001至1重量% 选自Cu,Zn,Al,Mg和Mo中的至少一种氧化物的化合物(A),(B)和(C)),并且具有不小于 900V,绝缘电阻不小于1010ΩEGA,每单位表面积的静电容量不小于0.06μF/ cm2,低介电损耗,tanδ不大于2.0%。