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1. 发明授权

US06544585B1 Method and apparatus for plating a substrate 有权
标题翻译：电镀基板的方法和装置
公开(公告)号：US06544585B1
公开(公告)日：2003-04-08
申请号：US09145500
申请日：1998-09-02
申请人： Fumio Kuriyama , Akihisa Hongo , Hiroaki Inoue , Tsuyoshi Tokuoka
发明人： Fumio Kuriyama , Akihisa Hongo , Hiroaki Inoue , Tsuyoshi Tokuoka
IPC分类号： B05D512
CPC分类号： H01L21/6715 , H01L21/67144
摘要： A high quality metallic deposit can be produced inside the micro-cavities formed on a surface of a substrate by the present invention. The method involves immersing the substrate in a liquid held in a processing chamber, evacuating the processing chamber so as to remove residual bubbles from the micro-cavities and to degas the liquid within the micro-cavities, and subjecting the liquid to boiling in at least those regions adjacent to the substrate.
摘要翻译：通过本发明，可以在形成在基板的表面上的微孔内产生高质量的金属沉积物。该方法包括将基底浸入保持在处理室中的液体中，抽空处理室以从微孔中除去残余气泡并使微腔内的液体脱气，并至少使液体沸腾那些区域与衬底相邻。

2. 发明授权

US06929722B2 Substrate plating apparatus 有权
标题翻译：基板电镀装置
公开(公告)号：US06929722B2
公开(公告)日：2005-08-16
申请号：US09945711
申请日：2001-09-05
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
IPC分类号： C25D7/12 , H01L21/00 , H01L21/288 , H01L21/768 , C25D17/00 , H01M4/29 , C23B3/00
CPC分类号： H01L21/67167 , C25D17/001 , H01L21/2885 , H01L21/67051 , H01L21/67126 , H01L21/67161 , H01L21/67173 , H01L21/6719 , H01L21/67219 , H01L21/6723 , H01L21/76849 , H01L21/76877 , Y10S134/902
摘要： A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit. The first plating unit, the first chemical mechanical polishing unit, the cleaning unit, the drying unit, and the substrate transfer unit are combined into a unitary arrangement.
摘要翻译：基板电镀装置在由微细凹槽和/或限定在基板中的细孔构成的互连区域上形成布线层。基板电镀装置包括用于在包括互连区域的基板的表面上形成镀层的电镀单元，用于对基板进行化学机械抛光以从基板的表面移除镀层的化学机械抛光单元，互连区域中的镀层，用于在形成镀层之后对基板进行清洗或基板进行化学机械抛光的清洁单元，用于在清洁基板之后使基板干燥的干燥单元，以及用于将基板转印第一电镀单元，第一化学机械抛光单元，清洁单元和干燥单元中的每一个的基板。第一电镀单元，第一化学机械抛光单元，清洁单元，干燥单元和基板转移单元组合成一体的布置。

3. 发明授权

US06294059B1 Substrate plating apparatus 有权
标题翻译：基板电镀装置
公开(公告)号：US06294059B1
公开(公告)日：2001-09-25
申请号：US09154895
申请日：1998-09-17
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Norio Kimura , Fumio Kuriyama , Manabu Tsujimura , Kenichi Suzuki , Atsushi Chono
IPC分类号： C25D1700
CPC分类号： H01L21/67167 , C25D17/001 , H01L21/2885 , H01L21/67051 , H01L21/67126 , H01L21/67161 , H01L21/67173 , H01L21/6719 , H01L21/67219 , H01L21/6723 , H01L21/76849 , H01L21/76877 , Y10S134/902
摘要： A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit. The first plating unit, the first chemical mechanical polishing unit, the cleaning unit, the drying unit, and the substrate transfer unit are combined into a unitary arrangement.
摘要翻译：基板电镀装置在由微细凹槽和/或限定在基板中的细孔构成的互连区域上形成布线层。基板电镀装置包括用于在包括互连区域的基板的表面上形成镀层的电镀单元，用于对基板进行化学机械抛光以从基板的表面移除镀层的化学机械抛光单元，互连区域中的镀层，用于在形成镀层之后对基板进行清洗或基板进行化学机械抛光的清洁单元，用于在清洁基板之后使基板干燥的干燥单元，以及用于将基板转印第一电镀单元，第一化学机械抛光单元，清洁单元和干燥单元中的每一个的基板。第一电镀单元，第一化学机械抛光单元，清洁单元，干燥单元和基板转移单元组合成一体的布置。

4. 发明授权

US06569752B1 Semiconductor element and fabricating method thereof 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US06569752B1
公开(公告)日：2003-05-27
申请号：US09522820
申请日：2000-03-10
申请人： Soichi Homma , Masahiro Miyata , Hirokazu Ezawa , Junichiro Yoshioka , Hiroaki Inoue , Tsuyoshi Tokuoka
发明人： Soichi Homma , Masahiro Miyata , Hirokazu Ezawa , Junichiro Yoshioka , Hiroaki Inoue , Tsuyoshi Tokuoka
IPC分类号： H01L2144
CPC分类号： H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/02126 , H01L2224/0347 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05027 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05541 , H01L2224/05558 , H01L2224/05572 , H01L2224/0558 , H01L2224/05639 , H01L2224/1132 , H01L2224/1147 , H01L2224/11901 , H01L2224/11902 , H01L2224/13006 , H01L2224/13023 , H01L2224/13111 , H01L2224/16238 , H01L2224/16507 , H01L2924/00013 , H01L2924/0002 , H01L2924/01004 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01092 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10253 , H01L2924/207 , H01L2224/13099 , H01L2924/00014 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00 , H01L2224/05552
摘要： The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag3Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag3Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.
摘要翻译：本半导体元件包括半导体衬底，形成在其上的布线衬垫，形成在其上的阻挡金属层，形成在其上的金属间化合物Ag 3 Sn，以及由其上形成的低熔点金属组成的突出电极。此外，半导体元件的制造方法包括以下步骤：在半导体衬底上形成布线焊盘，在其上形成阻挡金属层，在其上形成含有Ag的金属层，在其上形成含有Sn的低熔点金属层并且熔化含有Sn的低熔点金属层以形成突出电极，同时在包含Ag的金属层和含有Sn的低熔点金属层之间的界面处形成金属间化合物Ag 3 Sn。因此，利用无铅焊料，可以获得高可靠性的半导体元件。

5. 发明授权

US07033463B1 Substrate plating method and apparatus 失效
标题翻译：基板电镀方法及装置
公开(公告)号：US07033463B1
公开(公告)日：2006-04-25
申请号：US09762582
申请日：1999-08-11
申请人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
发明人： Akihisa Hongo , Naoaki Ogure , Hiroaki Inoue , Satoshi Sendai , Tetsuma Ikegami , Koji Mishima , Shuichi Okuyama , Mizuki Nagai , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D17/00
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.
摘要翻译：一种方法和装置，通过有效地填充形成在半导体衬底中的精细凹槽，镀覆金属而没有空隙或污染，从而形成衬底以形成布线。用电镀金属填充形成在半导体衬底中的布线凹槽的衬底的电镀包括在衬底上进行形成初始层的无电镀处理，并且进行用电镀金属填充布线凹槽的电解电镀工艺，同时初始层用作供料层。

6. 发明授权

US06716330B2 Electroless plating apparatus and method 有权
公开(公告)号：US06716330B2
公开(公告)日：2004-04-06
申请号：US09983399
申请日：2001-10-24
申请人： Akihisa Hongo , Koji Mishima , Hiroaki Inoue , Norio Kimura , Tsutomu Karimata
发明人： Akihisa Hongo , Koji Mishima , Hiroaki Inoue , Norio Kimura , Tsutomu Karimata
IPC分类号： C25D2112
CPC分类号： H01L21/76843 , C23C18/1619 , C23C18/1669 , C23C18/1678 , H01L21/288 , H01L21/76849 , H01L21/76874
摘要： An plating apparatus which can easily form a plated film having more uniform thickness on a surface, to be plate, of a material to be plated. The plating apparatus includes a holding portion having a heating portion for holding a material to be plated in such a state that a surface to be plated faces downward, and a plating bath for introducing an electroless plating liquid having a predetermined temperature into a plating chamber, and holding the electroless plating liquid while allowing the electroless plating liquid to overflow an overflow dam. The material which is by the holding portion, is brought into contact with the plating liquid in the plating bath to plate the material.

7. 发明授权

US09553604B2 Information processing system, information compression device, information decompression device, information processing method, and program 有权
标题翻译：信息处理系统，信息压缩装置，信息解压装置，信息处理方法和程序
公开(公告)号：US09553604B2
公开(公告)日：2017-01-24
申请号：US13262181
申请日：2010-03-19
申请人： Hiroaki Inoue
发明人： Hiroaki Inoue
IPC分类号： H03M7/30 , G11C7/10 , H04L29/12 , G11C29/00
CPC分类号： H03M7/30 , G11C7/103 , G11C29/003 , H04L29/12311
摘要： In order to improve the compression rate for configuration information including address information and data information when transmitting or storing configuration information which includes addresses and data having differing characteristics, an information compression device is provided with a compressor which receives as input and compresses the configuration information provided with the addresses and data, and a compressed information storage module for storing the configuration information which is compressed, that is, compressed configuration information, as the information to be decompressed for the user, said compressor including an information separating module for separating the configuration information into address information and data information, an address compressor and data compressor which separately compress the separated address information and data information, and a compressed information outputting module for combining the compressed address information and data information and outputting the result as compressed configuration information.
摘要翻译：为了在发送或存储具有不同特征的地址和数据的配置信息的情况下提高包括地址信息和数据信息的配置信息的压缩率，信息压缩装置设置有作为输入接收并压缩提供的配置信息的压缩器具有地址和数据的压缩信息存储模块，以及用于将被压缩的配置信息（即，压缩配置信息）存储为要为用户解压缩的信息的压缩信息存储模块，所述压缩器包括用于分离配置信息的信息分离模块地址信息和数据信息，分离地压缩分离的地址信息和数据信息的地址压缩器和数据压缩器，以及压缩信息输出模块，用于将压缩的地址信息和数据信息并将结果作为压缩配置信息输出。

8. 发明授权

US09164905B2 Semiconductor integrated circuit device, method of controlling semiconductor integrated circuit device, and cache device 有权
标题翻译：半导体集成电路器件，半导体集成电路器件的控制方法及缓存器件
公开(公告)号：US09164905B2
公开(公告)日：2015-10-20
申请号：US13393814
申请日：2010-08-18
申请人： Hiroaki Inoue
发明人： Hiroaki Inoue
IPC分类号： G06F12/00 , G06F12/08
CPC分类号： G06F12/0802 , G06F2212/1028 , Y02D10/13
摘要： There are provided a semiconductor integrated circuit device, a method of controlling a semiconductor integrated circuit device, and a cache device capable of efficiently implementing power saving, wherein the cache device includes a low-voltage operation enabling cache (200), and a small-area cache (300) having a type different from that of the cache (200), the cache (200) and the cache (300) being independently supplied with source voltage; the cache (200) being operable at a voltage lower than the lower limit voltage at which the cache (300) is operable; a cache control unit (400) operating switchable controls between a first mode allowing only the cache (200) to operate, and a second mode allowing the cache (200) or the cache (300) to operate; and the cache (200) in the first mode operating to supply a voltage below the lower limit voltage at which the cache (300) is operable, while interrupting power supply to the cache (300).
摘要翻译：提供了一种半导体集成电路器件，一种半导体集成电路器件的控制方法和能够有效地实现功率节省的高速缓存器件，其中该高速缓存器件包括一个使能高速缓存（200）的低压工作，区域缓存（300）具有与高速缓存（200）不同的类型，高速缓存（200）和高速缓存（300）被独立地提供源电压; 高速缓存（200）可操作在低于高速缓存（300）可操作的下限电压的电压; 高速缓存控制单元（400）在允许仅高速缓存（200）操作的第一模式和允许高速缓存（200）或高速缓存（300）操作的第二模式之间操作可切换控制; 以及在所述第一模式下的所述高速缓存（200）工作以提供低于所述高速缓存（300）可操作的所述下限电压的电压，同时中断向所述高速缓存（300）的电力供应。

9. 发明授权

US09160361B2 Compressed data transceiver apparatus, data compressor device, compressed data receiver device and data compression method 有权
标题翻译：压缩数据收发设备，数据压缩设备，压缩数据接收设备和数据压缩方式
公开(公告)号：US09160361B2
公开(公告)日：2015-10-13
申请号：US13379271
申请日：2010-06-01
申请人： Hiroaki Inoue
发明人： Hiroaki Inoue
IPC分类号： H03M7/30
CPC分类号： H03M7/30 , H03M7/3086 , H03M7/6023
摘要： To provide a data compression method that can achieve a high data compression ratio and does not require a buffer circuit or only requires a buffer circuit having a small storage capacity at a receiving side. A data compressor device has an adjustment and compression tool operable to switch a plurality of code words having different code lengths and compress input data at a rate that does not exceed a predetermined receiving speed.
摘要翻译：为了提供可以实现高数据压缩比并且不需要缓冲电路或仅需要在接收侧具有小存储容量的缓冲电路的数据压缩方法。数据压缩装置具有可操作以切换具有不同代码长度的多个代码字的调整和压缩工具，并以不超过预定接收速度的速率压缩输入数据。

10. 发明授权

US09109344B2 Working machine 有权
标题翻译：工作机
公开(公告)号：US09109344B2
公开(公告)日：2015-08-18
申请号：US13321599
申请日：2010-05-19
申请人： Kouya Iizuka , Satoru Nishimura , Hiroshi Yoshida , Hiroaki Inoue
发明人： Kouya Iizuka , Satoru Nishimura , Hiroshi Yoshida , Hiroaki Inoue
IPC分类号： E02F9/22 , E02F9/20 , F15B11/17
CPC分类号： E02F9/2004 , E02F9/2228 , E02F9/2282 , E02F9/2285 , E02F9/2292 , F15B11/17 , F15B2211/324 , F15B2211/526
摘要： In the working machine, first and second pilot flow paths are directly or indirectly connected to a tank flow path (52). A first restrictor is disposed between the first pilot flow path and the tank flow path. A second restrictor is disposed between the second pilot flow path and the tank flow path. An actuator control unit is configured to control an actuator based on a hydraulic pressure detected by a first hydraulic pressure detector unit and that detected by a second hydraulic pressure detector unit sensor.
摘要翻译：在工作机器中，第一和第二先导流动路径直接或间接地连接到罐流动路径（52）。第一限流器设置在第一先导流路和箱流路之间。第二限流器设置在第二先导流路和罐流路之间。执行器控制单元被配置为基于由第一液压检测器单元检测到的液压并且由第二液压检测器单元传感器检测到的液压来控制致动器。

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