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1. 发明授权

US5439763A Optical mask and method of correcting the same 失效
标题翻译：光学掩模及其校正方法
公开(公告)号：US5439763A
公开(公告)日：1995-08-08
申请号：US22909
申请日：1993-02-26
申请人： Akira Shimase , Junzou Azuma , Satoshi Haraichi , Fumikazu Itoh , Yasuhiro Koizumi
发明人： Akira Shimase , Junzou Azuma , Satoshi Haraichi , Fumikazu Itoh , Yasuhiro Koizumi
IPC分类号： G03F1/26 , G03F1/30 , G03F1/72 , G03F9/00
CPC分类号： G03F1/72 , G03F1/26 , G03F1/30
摘要： An optical mask for a projection optical system and a method of correcting the mask wherein the mask includes a light intercepting pattern formed on a transparent substrate and a phase shifter for changing the phase of an exposure light provided at predetermined openings of the light intercepting pattern. An etching stopper film which transmits the exposure light is provided between said phase shifter and said light intercepting pattern and for correction of the mask a focused ion beam is utilized for removal of defects by the phase shifter.
摘要翻译：一种用于投影光学系统的光学掩模和一种校正掩模的方法，其中掩模包括形成在透明基板上的遮光图案和用于改变设置在遮光图案的预定开口处的曝光光的相位的移相器。在所述移相器和所述遮光图案之间设置有曝光光的蚀刻停止膜，并且为了校正掩模，使用聚焦离子束来消除由移相器产生的缺陷。

2. 发明授权

US5223109A Ion beam processing method and apparatus 失效
标题翻译：离子束处理方法和装置
公开(公告)号：US5223109A
公开(公告)日：1993-06-29
申请号：US766328
申请日：1991-09-27
申请人： Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Junzou Azuma
发明人： Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Junzou Azuma
IPC分类号： B23K15/00 , H01J37/305
CPC分类号： H01J37/3056 , H01J2237/202 , H01J2237/31
摘要： There is disclosed an ion beam processing method of processing a rotating workpiece for a very small-size rotary member, using an ion beam or a focused ion beam. Apparatus for performing this method is also disclosed. In the formation of a product having a non-circular cross-section, when the amount of application of the ion beam is kept constant, the rotational angular velocity of the workpiece is varied in accordance with the rotational angular position of the workpiece. On the other hand, when the rotational angular velocity of the workpiece is kept constant, the amount of application of the ion beam is varied. When it is difficult to align the axis of the workpiece with the axis of rotation of a workpiece holder, the focused ion beam is applied in accordance with the oscillation of the workpiece.
摘要翻译：公开了使用离子束或聚焦离子束来处理非常小尺寸的旋转构件的旋转工件的离子束处理方法。还公开了用于执行该方法的装置。在形成具有非圆形横截面的产品时，当离子束的施加量保持恒定时，工件的旋转角速度根据工件的旋转角度位置而变化。另一方面，当工件的旋转角速度保持恒定时，离子束的施加量变化。当难以将工件的轴线与工件保持架的旋转轴对齐时，根据工件的振动施加聚焦离子束。

3. 发明授权

US5342448A Apparatus for processing a sample using a charged beam and reactive gases 失效
标题翻译：用于使用带电束和反应性气体处理样品的装置
公开(公告)号：US5342448A
公开(公告)日：1994-08-30
申请号：US40842
申请日：1993-03-31
申请人： Yuuichi Hamamura , Satoshi Haraichi , Akira Shimase , Junzou Azuma , Fumikazu Itoh , Toshio Yamada , Yasuhiro Koizumi , Michinobu Mizumura
发明人： Yuuichi Hamamura , Satoshi Haraichi , Akira Shimase , Junzou Azuma , Fumikazu Itoh , Toshio Yamada , Yasuhiro Koizumi , Michinobu Mizumura
IPC分类号： H01J37/244 , H01J37/317 , H01J37/30
CPC分类号： H01J37/317 , H01J37/244 , H01J37/3056 , H01J2237/006 , H01J2237/2443 , H01J2237/24435 , H01J2237/304 , H01J2237/31744
摘要： A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.
摘要翻译：使用带电束和反应性气体处理样品的方法以及使用其的系统的方法和方法，所述方法和系统能够执行反应性蚀刻和使用带电粒子检测器进行的束辅助沉积，其不会由于反应气体。该系统设计成使得以带电粒子检测器的形式提供快门机构，并且可以抽出用于容纳带电粒子检测器的室。在样品的观察中，带电粒子检测器被打开以打开快门机构，并且在样品的处理中，带电粒子检测器被关闭或离开以关闭快门机构以将内部带电粒子检测器。

4. 发明授权

US5683547A Processing method and apparatus using focused energy beam 失效
标题翻译：使用聚焦能量束的加工方法和装置
公开(公告)号：US5683547A
公开(公告)日：1997-11-04
申请号：US273780
申请日：1994-07-12
申请人： Junzou Azuma , Fumikazu Itoh , Satoshi Haraichi , Akira Shimase , Junichi Mori , Takahiko Takahashi , Emiko Uda
发明人： Junzou Azuma , Fumikazu Itoh , Satoshi Haraichi , Akira Shimase , Junichi Mori , Takahiko Takahashi , Emiko Uda
IPC分类号： H01J37/305 , H01L21/3213 , H01L21/768 , H01L21/30
CPC分类号： H01L21/76892 , H01J37/3056 , H01L21/32136 , H01L21/76879 , H01J2237/006 , H01J2237/31744
摘要： A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching gas, a mixed gas different in composition from any conventional one is employed and the gas is uniformly supplied to an etching area and at least one of the components of such a mixed gas is a spontaneous reactive gas for use in etching the sample spontaneously and isotropically. With this arrangement, it is possible to subject to local etching a material for which the local etching has been impossible to provide since a single etching gas causes a reaction too fierce or causes almost nearly no reaction.
摘要翻译：一种处理方法和装置，其特征在于，在蚀刻气体气氛中，通过用离子束或电子束等聚焦能量束照射样品，使用聚焦能量束进行聚焦能量束照射区域的局部能量束处理。作为蚀刻气体，使用与常规方法不同组成的混合气体，并将气体均匀地供给到蚀刻区域，并且这种混合气体的至少一个成分是用于蚀刻样品的自发反应气体自发和各向同性。通过这种布置，由于单一蚀刻气体引起反应太剧烈或几乎几乎不发生反应，因此可以局部蚀刻局部蚀刻不可能提供的材料。

5. 发明授权

US5358806A Phase shift mask, method of correcting the same and apparatus for carrying out the method 失效
标题翻译：相移掩模，校正方法以及执行该方法的装置
公开(公告)号：US5358806A
公开(公告)日：1994-10-25
申请号：US854861
申请日：1992-03-19
申请人： Satoshi Haraichi , Fumikazu Itoh , Akira Shimase , Hiroshi Yamaguchi , Junzou Azuma , Yasuhiro Koizumi
发明人： Satoshi Haraichi , Fumikazu Itoh , Akira Shimase , Hiroshi Yamaguchi , Junzou Azuma , Yasuhiro Koizumi
IPC分类号： G03F1/26 , G03F1/74 , G03F9/00
CPC分类号： H01J37/228 , G03F1/74 , H01J37/3056 , G03F1/26 , H01J2237/2482 , H01J2237/30466
摘要： A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrate, which is resistant to an etching to which the phase shifter is subjected and transparent for exposure light is corrected by selectively etching a defective portion of the phase shifter, having a lacking type defect, with respect to the etching stopper layer along the whole thickness of the phase shifter and by perforating a portion of the etching stopper layer and the transparent substrate positioned under the etched defective portion by a depth which corresponds to a magnitude of an optical path of the phase shifter for the exposure light, the etching being a reactive etching which uses charged particle beam and a reactive gas and, the bottom surface of a portion etched being flattened by utilizing a fact that the phase shifter is selectively etched.
摘要翻译：具有设置在透明基板上的移相器的相移掩模的缺陷形成为预定图案并且用于移动透过其的曝光光的相位和设置在移相器和透明基板之间的蚀刻阻挡层，对于移相器经受的蚀刻和曝光的透明度的蚀刻是通过沿相位的整个厚度相对于蚀刻停止层选择性蚀刻缺陷型缺陷的相移器的缺陷部分而被校正的并且通过将位于蚀刻的缺陷部分下方的蚀刻阻挡层和透明基板的一部分穿孔相当于用于曝光光的移相器的光路的大小的深度，蚀刻是使用的反应性蚀刻带电粒子束和反应性气体，并且通过利用被蚀刻的部分的底表面变平移相器被选择性蚀刻的事实。

6. 发明授权

US5447614A Method of processing a sample using a charged beam and reactive gases and system employing the same 失效
标题翻译：使用带电束和反应性气体处理样品的方法及采用该方法的系统
公开(公告)号：US5447614A
公开(公告)日：1995-09-05
申请号：US260907
申请日：1994-06-15
申请人： Yuuichi Hamamura , Satoshi Haraichi , Akira Shimase , Junzou Azuma , Fumikazu Itoh , Toshio Yamada , Yasuhiro Koizumi , Michinobu Mizumura
发明人： Yuuichi Hamamura , Satoshi Haraichi , Akira Shimase , Junzou Azuma , Fumikazu Itoh , Toshio Yamada , Yasuhiro Koizumi , Michinobu Mizumura
IPC分类号： H01J37/244 , H01J37/317 , C23C14/46 , B23K15/00
CPC分类号： H01J37/317 , H01J37/244 , H01J37/3056 , H01J2237/006 , H01J2237/2443 , H01J2237/24435 , H01J2237/304 , H01J2237/31744
摘要： A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.
摘要翻译：使用带电束和反应性气体处理样品的方法以及使用其的系统的方法和方法，所述方法和系统能够执行反应性蚀刻和使用带电粒子检测器进行的束辅助沉积，其不会由于反应气体。该系统设计成使得以带电粒子检测器的形式提供快门机构，并且可以抽出用于容纳带电粒子检测器的室。在样品的观察中，带电粒子检测器被打开以打开快门机构，并且在样品的处理中，带电粒子检测器被关闭或离开以关闭快门机构以将内部带电粒子检测器。

7. 发明授权

US5504340A Process method and apparatus using focused ion beam generating means 失效
标题翻译：使用聚焦离子束产生装置的方法和装置
公开(公告)号：US5504340A
公开(公告)日：1996-04-02
申请号：US207860
申请日：1994-03-09
申请人： Michinobu Mizumura , Yuuichi Hamamura , Junzou Azuma , Akira Shimase , Takashi Kamimura , Fumikazu Itoh , Kaoru Umemura , Yoshimi Kawanami , Yuuichi Madokoro
发明人： Michinobu Mizumura , Yuuichi Hamamura , Junzou Azuma , Akira Shimase , Takashi Kamimura , Fumikazu Itoh , Kaoru Umemura , Yoshimi Kawanami , Yuuichi Madokoro
IPC分类号： G01Q30/20 , G01Q60/52 , H01J37/305 , H01J37/317
CPC分类号： H01J37/3056 , H01J2237/0802 , H01J2237/0805 , H01J2237/0807 , H01J2237/0817 , H01J2237/31732 , H01J2237/31742 , H01J2237/31749
摘要： A processing method and a processing apparatus realizing the method use a focused ion beam generator. The apparatus includes a plasma or liquid metal ion source producing ions not influencing electric characteristics of a sample, an ion beam generator for extracting ions from the ion source into an ion beam, an ion beam focusing device for focusing the ion beam, an irradiator for irradiating the focused ion beam onto the sample, and a sample chamber in which the sample to be irradiated for processing is installed. The focused ion beam is irradiated onto a sample such as a silicon wafer or device to conduct on a particular position of the sample a fine machining work, a fine layer accumulation, and an analysis.
摘要翻译：实现该方法的处理方法和处理装置使用聚焦离子束发生器。该装置包括：等离子体或液体金属离子源，其产生不影响样品电特性的离子;离子束发生器，用于将离子源离子离子束提取到离子束;离子束聚焦装置，用于聚焦离子束;辐照器，将聚焦的离子束照射到样品上，并且在其中安装待照射用于处理的样品的样品室。将聚焦离子束照射到诸如硅晶片或器件的样品上以在样品的特定位置上进行精细加工，细层积累和分析。

8. 发明授权

US5086015A Method of etching a semiconductor device by an ion beam 失效
标题翻译：通过离子束蚀刻半导体器件的方法
公开(公告)号：US5086015A
公开(公告)日：1992-02-04
申请号：US394364
申请日：1989-08-15
申请人： Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Mikio Hongo
发明人： Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Mikio Hongo
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/76802 , Y10S148/046
摘要： A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning operation by a voltage applied to a deflection electrode; forming a first hole in the semiconductor device by the focused ion beam to a depth capable of reaching an insulating film formed between upper and lower wiring conductors so that the first hole has a curved bottom corresponding to the undulation of the upper wiring conductor, and the upper wiring conductor is absent at the bottom of the first hole; and scanning a portion of the bottom of the first hole with the focused ion beam to form a second hole in the insulating film to a depth capable of reaching the lower wiring conductor, thereby preventing the shorting between the upper and lower wiring conductors. Further, a method of forming a hole of a predetermined shape at a surface area having a step-like portion of a semiconductor device by an ion beam is disclosed which method comprises a pre-etching step of scanning the high-level region of the step-like portion with the ion beam so that the high-level region becomes equal in level to the low-level region of the step-like portion, and a main step of scanning the whole of the surface area with the ion beam till the hole of the predetermined shape is formed in the semiconductor device.
摘要翻译：公开了一种通过离子束蚀刻具有多层布线的半导体器件的方法，该方法包括以下步骤：从高密度离子源提取高强度离子束; 聚焦提取的离子束; 使聚焦离子束通过施加到偏转电极的电压进行扫描操作; 通过所述聚焦离子束在所述半导体器件中形成第一孔至能够到达形成在上部和下部布线导体之间的绝缘膜的深度，使得所述第一孔具有对应于所述上部布线导体的起伏的弯曲底部，并且上部布线导体在第一个孔的底部不存在; 并用聚焦离子束扫描第一孔的底部的一部分，以在绝缘膜中形成能够到达下布线导体的深度的第二孔，从而防止上布线导体和下布线导体之间的短路。此外，公开了一种通过离子束在具有半导体器件的阶梯状部分的表面区域形成预定形状的孔的方法，该方法包括：扫描步骤的高级区域的预蚀刻步骤具有离子束的部分，使得高级区域变得与阶梯状部分的低级区域相等，并且主要步骤是用离子束扫描整个表面积直到孔在半导体器件中形成预定形状。

9. 发明授权

US5825035A Processing method and apparatus using focused ion beam generating means 失效
标题翻译：使用聚焦离子束产生装置的处理方法和装置
公开(公告)号：US5825035A
公开(公告)日：1998-10-20
申请号：US745657
申请日：1996-11-08
申请人： Michinobu Mizumura , Yuuichi Hamamura , Junzou Azuma , Akira Shimase , Takashi Kamimura , Fumikazu Itoh , Kaoru Umemura , Yoshimi Kawanami , Yuuichi Madokoro
发明人： Michinobu Mizumura , Yuuichi Hamamura , Junzou Azuma , Akira Shimase , Takashi Kamimura , Fumikazu Itoh , Kaoru Umemura , Yoshimi Kawanami , Yuuichi Madokoro
IPC分类号： H01J37/317
CPC分类号： H01J37/3056 , H01J2237/0802 , H01J2237/0805 , H01J2237/0807 , H01J2237/0817 , H01J2237/31732 , H01J2237/31742
摘要： A processing method using a plasma ion source for generating a focused ion beam, characterized by covering, with an insulator, an inner wall of a plasma holding vessel excluding a reference electrode for applying a voltage to a plasma and an ion extraction electrode for extracting ions from the plasma, and employing means of continuously controlling the absolute value of an ion beam current in a range of from 1 to 10 .mu.A by changing the absolute value of an ion extraction voltage applied between the reference electrode and the ion extraction electrode in a range of from 0 to 100 V; and an apparatus for carrying out the processing method. This is advantageous in stabilizing the ion beam current and in preventing the ion beam from being made dim even when the current value of the ion beam is changed.
摘要翻译：一种使用等离子体离子源产生聚焦离子束的处理方法，其特征在于，用绝缘体覆盖除了用于向等离子体施加电压的参考电极之外的等离子体保持容器的内壁和用于提取离子的离子提取电极并且通过改变在参考电极和离子提取电极之间施加的离子提取电压的绝对值，在1至10μA的范围内连续地控制离子束电流的绝对值的方法，范围为0〜100V; 以及用于执行处理方法的装置。这有利于稳定离子束电流，并且即使当离子束的电流值改变时也防止离子束变暗。

10. 发明授权

US5583344A Process method and apparatus using focused ion beam generating means 失效
公开(公告)号：US5583344A
公开(公告)日：1996-12-10
申请号：US595993
申请日：1996-02-09
申请人： Michinobu Mizumura , Yuuichi Hamamura , Junzou Azuma , Akira Shimase , Takashi Kamimura , Fumikazu Itoh , Kaoru Umemura , Yoshimi Kawanami , Yuuichi Madokoro
发明人： Michinobu Mizumura , Yuuichi Hamamura , Junzou Azuma , Akira Shimase , Takashi Kamimura , Fumikazu Itoh , Kaoru Umemura , Yoshimi Kawanami , Yuuichi Madokoro
IPC分类号： G01Q30/20 , G01Q60/52 , H01J37/305 , H01J37/317
CPC分类号： H01J37/3056 , H01J2237/0802 , H01J2237/0805 , H01J2237/0807 , H01J2237/0817 , H01J2237/31732 , H01J2237/31742 , H01J2237/31749
摘要： A processing method and a processing apparatus realizing the method use a focused ion beam generator. The apparatus includes a plasma or liquid metal ion source producing ions not influencing electric characteristics of a sample, an ion beam generator for extracting ions from the ion source into an ion beam, an ion beam focusing device for focusing the ion beam, an irradiator for irradiating the focused ion beam onto the sample, and a sample chamber in which the sample to be irradiated for processing is installed. The focused ion beam is irradiated onto a sample such as a silicon wafer or device to conduct on a particular position of the sample a fine machining work, a fine layer accumulation, and an analysis.

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