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1. 发明授权

US07522290B2 Apparatus and method for inspecting semiconductor wafer 有权
标题翻译：用于检查半导体晶片的装置和方法
公开(公告)号：US07522290B2
公开(公告)日：2009-04-21
申请号：US11569249
申请日：2005-06-01
申请人： Fumi Nabeshima , Kazuya Togashi
发明人： Fumi Nabeshima , Kazuya Togashi
IPC分类号： G01B11/02
CPC分类号： G01B11/26 , G01N21/9501
摘要： A semiconductor wafer surface inspection apparatus detects LADs (Large Area Defects) which are flat and have low heights and differentiates them from particles. This inspection apparatus irradiates each point on the surface of a semiconductor wafer 200 with two parallel laser beams perpendicularly to the points while scanning the surface, and by measuring the phase difference between the two reflected beams, detects points 400 at which an upward inclination exists and points 402 at which a downward inclination exists on the surface of the wafer 200. Areas 404 in which pairs or sets of upward-inclination points 400 and downward-inclination points 402 exist within a prescribed range of mutual distances are inferred to be LADs.
摘要翻译：半导体晶片表面检查装置检测平坦且具有低高度并将其与颗粒区分开的LAD（大面积缺陷）。该检查装置在扫描表面的同时用两个平行的激光束照射半导体晶片200的表面上的两个平行的激光束，并且通过测量两个反射光束之间的相位差来检测存在向上倾斜的点400，在晶片200的表面上存在向下倾斜的点402.其中成对或组的向上倾斜点400和向下倾斜点402存在于相互距离的规定范围内的区域404被推断为LAD。

2. 发明申请

US20090040512A1 Semiconductor wafer inspection device and method 有权
标题翻译：半导体晶圆检查装置及方法
公开(公告)号：US20090040512A1
公开(公告)日：2009-02-12
申请号：US10598933
申请日：2006-09-14
申请人： Fumi Nabeshima , Kazuya Togashi , Hiroshi Jiken , Yoshinori Suenaga
发明人： Fumi Nabeshima , Kazuya Togashi , Hiroshi Jiken , Yoshinori Suenaga
IPC分类号： G01N21/94
CPC分类号： G01N21/9501 , G01N21/4788 , G01N2021/4716 , G01N2021/8854
摘要： The surface of an epitaxial wafer is inspected using an optical scattering method. The intensities of light scattered with a narrow scattering angle and light scattered with, a wide scattering angle reflected from laser light scatterers (LLS) on the wafer surface are detected. If the intensifies of narrowly and widely scattered lights are within a prescribed sizing range, it is judged whether the laser light scatterer is a particle or killer defect by deciding into which zone (410, 414, 418, 439) within the sizing range the PLS size based on the narrowly scattered light intensity and the PLS size based, on the widely scattered light intensity fall. If the intensity of the narrowly or widely scattered light exceeds the sizing range (417, 420, 421, 423, 424, 425), or if a plenty of laser light scatterers are continuous or concentrated (422), the laser light scatterers are judged to be killer defects.
摘要翻译：使用光散射法检查外延晶片的表面。检测到散射散射的光的强度和散射的光，从晶片表面上的激光散射体（LLS）反射的宽散射角。如果狭窄广泛散射的光的强化在规定的尺寸范围内，则通过决定PLS的尺寸范围内的哪个区域（410,414,418,439）来判断激光散射体是粒子还是杀伤缺陷尺寸基于窄散射光强度和PLS尺寸，在广泛散射的光强度下降。如果狭窄或广泛散射的光的强度超过尺寸范围（417,420,421,423,424,425），或者如果大量激光散射体连续或集中（422），则判断激光散射体成为凶手的缺陷。

3. 发明授权

US07576852B2 Semiconductor wafer inspection device and method 有权
标题翻译：半导体晶圆检查装置及方法
公开(公告)号：US07576852B2
公开(公告)日：2009-08-18
申请号：US10598933
申请日：2006-09-14
申请人： Fumi Nabeshima , Kazuya Togashi , Hiroshi Jiken , Yoshinori Suenaga
发明人： Fumi Nabeshima , Kazuya Togashi , Hiroshi Jiken , Yoshinori Suenaga
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/4788 , G01N2021/4716 , G01N2021/8854
摘要： The surface of an epitaxial wafer is inspected using an optical scattering method. The intensities of light scattered with a narrow scattering angle and light scattered with a wide scattering angle reflected from laser light scatterers (LLS) on the wafer surface are detected. If the intensifies of narrowly and widely scattered lights are within a prescribed sizing range, it is judged whether the laser light scatterer is a particle or killer defect by deciding into which zone (410, 414, 418, 439) within the sizing range the PLS size based on the narrowly scattered light intensity and the PLS size based, on the widely scattered light intensity fall. If the intensity of the narrowly or widely scattered light exceeds the sizing range (417, 420, 421, 423, 424, 425), or if a plenty of laser light scatterers are continuous or concentrated (422), the laser light scatterers are judged to be killer defects.
摘要翻译：使用光散射法检查外延晶片的表面。检测到以散射角散射的光的强度和从晶片表面上的激光散射体（LLS）反射的散射角散射的光。如果狭窄广泛散射的光的强化在规定的尺寸范围内，则通过决定PLS的尺寸范围内的哪个区域（410,414,418,439）来判断激光散射体是粒子还是杀伤缺陷尺寸基于窄散射光强度和PLS尺寸，在广泛散射的光强度下降。如果狭窄或广泛散射的光的强度超过尺寸范围（417,420,421,423,424,425），或者如果大量激光散射体连续或集中（422），则判断激光散射体成为凶手的缺陷。

4. 发明申请

US20070229815A1 Apparatus and Method for Inspecting Semiconductor Wafer 有权
标题翻译：用于检查半导体晶片的装置和方法
公开(公告)号：US20070229815A1
公开(公告)日：2007-10-04
申请号：US11569249
申请日：2005-06-01
申请人： Fumi Nabeshima , Kazuya Togashi
发明人： Fumi Nabeshima , Kazuya Togashi
IPC分类号： G01N21/00
CPC分类号： G01B11/26 , G01N21/9501
摘要： A semiconductor wafer surface inspection apparatus detects LADs (Large Area Defects) which are flat and have low heights and differentiates them from particles. This inspection apparatus irradiates each point on the surface of a semiconductor wafer 200 with two parallel laser beams perpendicularly to the points while scanning the surface, and by measuring the phase difference between the two reflected beams, detects points 400 at which an upward inclination exists and points 402 at which a downward inclination exists on the surface of the wafer 200. Areas 404 in which pairs or sets of upward-inclination points 400 and downward-inclination points 402 exist within a prescribed range of mutual distances are inferred to be LADs.
摘要翻译：半导体晶片表面检查装置检测平坦且具有低高度并将其与颗粒区分开的LAD（大面积缺陷）。该检查装置在扫描表面的同时用两个平行的激光束照射半导体晶片200的表面上的两个平行的激光束，并且通过测量两个反射光束之间的相位差来检测存在向上倾斜的点400，在晶片200的表面上存在向下倾斜的点402.其中成对或组的向上倾斜点400和向下倾斜点402存在于相互距离的规定范围内的区域404被推断为LAD。

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