专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060226514A1 Semiconductor epitaxial wafer 审中-公开
标题翻译：半导体外延片
公开(公告)号：US20060226514A1
公开(公告)日：2006-10-12
申请号：US10550325
申请日：2004-03-25
申请人： Hiroshi Jiken , Hiroshi Jiken , Yuuichi Nasu , Takeshi Masuda
发明人： Hiroshi Jiken , Hiroshi Jiken , Yuuichi Nasu , Takeshi Masuda
IPC分类号： H01L23/58
CPC分类号： H01L21/322
摘要： Multiple epitaxial layers are grown on the front side of a p silicon substrate and no layers are grown on the other side. Among the multiple epitaxial layers the one in contact with the silicon substrate is a first p+ epitaxial layer. Since the epitaxial layer is in contact with the p+ layer, gettering can be efficiently done also in a low-temperature device manufacturing process, thereby improving the manufacturing yield of an epitaxial wafer. Therefore the manufacturing cost of an epitaxial wafer is reduced.
摘要翻译：在p硅衬底的正面上生长多个外延层，而在另一侧上不生长层。在多个外延层中，与硅衬底接触的外延层是第一p + +外延层。由于外延层与p + +层接触，所以也可以在低温器件制造工艺中有效地进行吸杂，从而提高外延晶片的制造成品率。因此，外延晶片的制造成本降低。

2. 发明授权

US07576852B2 Semiconductor wafer inspection device and method 有权
标题翻译：半导体晶圆检查装置及方法
公开(公告)号：US07576852B2
公开(公告)日：2009-08-18
申请号：US10598933
申请日：2006-09-14
申请人： Fumi Nabeshima , Kazuya Togashi , Hiroshi Jiken , Yoshinori Suenaga
发明人： Fumi Nabeshima , Kazuya Togashi , Hiroshi Jiken , Yoshinori Suenaga
IPC分类号： G01N21/00
CPC分类号： G01N21/9501 , G01N21/4788 , G01N2021/4716 , G01N2021/8854
摘要： The surface of an epitaxial wafer is inspected using an optical scattering method. The intensities of light scattered with a narrow scattering angle and light scattered with a wide scattering angle reflected from laser light scatterers (LLS) on the wafer surface are detected. If the intensifies of narrowly and widely scattered lights are within a prescribed sizing range, it is judged whether the laser light scatterer is a particle or killer defect by deciding into which zone (410, 414, 418, 439) within the sizing range the PLS size based on the narrowly scattered light intensity and the PLS size based, on the widely scattered light intensity fall. If the intensity of the narrowly or widely scattered light exceeds the sizing range (417, 420, 421, 423, 424, 425), or if a plenty of laser light scatterers are continuous or concentrated (422), the laser light scatterers are judged to be killer defects.
摘要翻译：使用光散射法检查外延晶片的表面。检测到以散射角散射的光的强度和从晶片表面上的激光散射体（LLS）反射的散射角散射的光。如果狭窄广泛散射的光的强化在规定的尺寸范围内，则通过决定PLS的尺寸范围内的哪个区域（410,414,418,439）来判断激光散射体是粒子还是杀伤缺陷尺寸基于窄散射光强度和PLS尺寸，在广泛散射的光强度下降。如果狭窄或广泛散射的光的强度超过尺寸范围（417,420,421,423,424,425），或者如果大量激光散射体连续或集中（422），则判断激光散射体成为凶手的缺陷。

3. 发明申请

US20090040512A1 Semiconductor wafer inspection device and method 有权
标题翻译：半导体晶圆检查装置及方法
公开(公告)号：US20090040512A1
公开(公告)日：2009-02-12
申请号：US10598933
申请日：2006-09-14
申请人： Fumi Nabeshima , Kazuya Togashi , Hiroshi Jiken , Yoshinori Suenaga
发明人： Fumi Nabeshima , Kazuya Togashi , Hiroshi Jiken , Yoshinori Suenaga
IPC分类号： G01N21/94
CPC分类号： G01N21/9501 , G01N21/4788 , G01N2021/4716 , G01N2021/8854
摘要： The surface of an epitaxial wafer is inspected using an optical scattering method. The intensities of light scattered with a narrow scattering angle and light scattered with, a wide scattering angle reflected from laser light scatterers (LLS) on the wafer surface are detected. If the intensifies of narrowly and widely scattered lights are within a prescribed sizing range, it is judged whether the laser light scatterer is a particle or killer defect by deciding into which zone (410, 414, 418, 439) within the sizing range the PLS size based on the narrowly scattered light intensity and the PLS size based, on the widely scattered light intensity fall. If the intensity of the narrowly or widely scattered light exceeds the sizing range (417, 420, 421, 423, 424, 425), or if a plenty of laser light scatterers are continuous or concentrated (422), the laser light scatterers are judged to be killer defects.
摘要翻译：使用光散射法检查外延晶片的表面。检测到散射散射的光的强度和散射的光，从晶片表面上的激光散射体（LLS）反射的宽散射角。如果狭窄广泛散射的光的强化在规定的尺寸范围内，则通过决定PLS的尺寸范围内的哪个区域（410,414,418,439）来判断激光散射体是粒子还是杀伤缺陷尺寸基于窄散射光强度和PLS尺寸，在广泛散射的光强度下降。如果狭窄或广泛散射的光的强度超过尺寸范围（417,420,421,423,424,425），或者如果大量激光散射体连续或集中（422），则判断激光散射体成为凶手的缺陷。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式