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1. 发明专利

JP2009076778A Magnetoresistance effect element and magnetoresistive device 审中-公开
标题翻译：磁阻效应元件和磁阻器件
公开(公告)号：JP2009076778A
公开(公告)日：2009-04-09
申请号：JP2007245933
申请日：2007-09-21
申请人： Fujitsu Ltd , Masashi Kawasaki , 富士通株式会社 , 雅司川崎
发明人： UEHARA YUJI , KOMAGAKI KOJIRO , KAWASAKI MASASHI
IPC分类号： H01L43/10 , G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3993 , G11C11/161 , Y10T428/1121
摘要： PROBLEM TO BE SOLVED: To provide a high-quality magnetoresistance effect element which is capable of reducing resistance in the perpendicular-plane direction, and preventing deterioration in the performance of a barrier layer, and a magnetoresistive device using the element. SOLUTION: The magnetoresistance effect element comprises: a free layer; a pinned magnetic layer; and a barrier layer formed between the free layer and the pinned magnetic layer. The barrier layer is composed of a semiconductor, more specifically, a semiconductor in which MgO is used as a base material and a small amount of an impurity is doped. Furthermore, a magnetoresistive device is composed of the magnetoresistance effect element. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够降低垂直面方向的电阻并防止阻挡层的性能劣化的高品质磁阻效应元件以及使用该元件的磁阻器件。解决方案：磁阻效应元件包括：自由层; 钉扎磁性层; 以及形成在自由层和被钉扎磁性层之间的阻挡层。阻挡层由半导体，更具体地，其中使用MgO作为基底材料并掺杂少量杂质的半导体构成。此外，磁阻效应元件由磁阻效应元件组成。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2004273614A Semiconductor device and its fabricating process 有权
公开(公告)号：JP2004273614A
公开(公告)日：2004-09-30
申请号：JP2003059905
申请日：2003-03-06
申请人： Masashi Kawasaki , Hideo Ono , Sharp Corp , シャープ株式会社 , 英男大野 , 雅司川崎
发明人： FUJITA TATSUYA , SUGIHARA TOSHINORI , OCHI HISAO , KAWASAKI MASASHI , ONO HIDEO
IPC分类号： G02F1/1368 , H01L21/28 , H01L21/329 , H01L29/786 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which a semiconductor layer is formed of ZnO and aluminium is used as the material of electrode and interconnect line. SOLUTION: The semiconductor device comprises a substrate 1, at least one electrode supported by the substrate 1, and a semiconductor layer (ZnO) 4 touching the upper surface of the electrode at least partially. The electrode comprises a first conductive layer 2 of aluminium, a second conductive layer 3 formed of a material (Ti, or the like) causing less electrolytic corrosion reaction than aluminium between the upper surface of the first conductive layer 2 and the semiconductor layer 4, and an insulating protective layer 7 located between the lower surface of the semiconductor layer 4 and the side face of the first conductive layer 2. COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2004235532A Oxide semiconductor light emitting element 有权
公开(公告)号：JP2004235532A
公开(公告)日：2004-08-19
申请号：JP2003023991
申请日：2003-01-31
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01S5/327 , H01S5/125 , H01S5/187
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting element of which manufacturing process can be simplified, manufacturing cost can be reduced and in which a light emitting element structure excellent in crystallinity can be formed on a multilayer reflecting film.
SOLUTION: On a sapphire substrate 1, the multilayer reflecting film 2, an n-type ZnO contact layer 3, an n-type Mg
0.1 Zn
0.9 O clad layer 4, a non-doped quantum well light emitting layer 5, a p-type Mg
0.1 Zn
0.9 O clad layer 6, and a p-type ZnO contact layer 7 are laminated. The multilayer reflecting film 2 is constituted by alternately laminating LiGaO
2 layers and ZnO layers. As a result, the reflectivity of the multilayer reflecting film 2 becomes high even if the number of layers constituting the film 2 is small.
COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2004165267A Semiconductor light emitting device, light emission indicator and manufacturing method of them 审中-公开
公开(公告)号：JP2004165267A
公开(公告)日：2004-06-10
申请号：JP2002326742
申请日：2002-11-11
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01L33/06 , H01L33/28 , H01L33/32 , H01S5/343 , H01S5/347 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device and a light emission indicator, which do not require any external power supply and which are operated with a small power consumption even when the external power supply is employed. SOLUTION: A piezoelectric semiconductor thin film crystalline layer 3 is formed on a substrate 1, and a light emitting layer 4 having a multiple quantum well structure is formed on one part of the surface of the layer 3. Then the piezoelectric semiconductor thin film crystalline layer 3 is further formed across the whole surface of the light emitting layer 4 and the piezoelectric semiconductor thin film crystalline layer 3, on which the light emitting layer 4 is not formed. A semiconductor light emitting device 10 having a structure wherein the light emitting layer 4 is embedded into the piezoelectric semiconductor thin film crystalline 3 is obtained. In the light emitting device 10, when a pressure is impressed on the surface of the piezoelectric semiconductor thin film crystalline layer 3 in the direction of thickness of the same, positive and negative carriers are generated by piezoelectric effect while they are combined in the light emitting layer whereby light is emitted. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2004349583A Manufacturing method of transistor 审中-公开
标题翻译：晶体管的制造方法
公开(公告)号：JP2004349583A
公开(公告)日：2004-12-09
申请号：JP2003146907
申请日：2003-05-23
申请人： Masashi Kawasaki , Hideo Ono , Sharp Corp , シャープ株式会社 , 英男大野 , 雅司川崎
发明人： HARA TAKESHI , FUJITA TATSUYA , OCHI HISAO , YOSHIOKA HIROTO , SUGIHARA TOSHINORI , KAWASAKI MASASHI , ONO HIDEO
IPC分类号： H01L29/786 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a bottom gate type transistor without damaging zinc oxide and without deteriorating indication quality using an ink jet method which is simple in operation and advantageous in cost when the zinc oxide is employed as a semiconductor element. SOLUTION: The manufacturing method of a bottom gate type transistor is adapted such that a gate electrode 11 is formed on a glass substrate 10 into a predetermined shape, and then a gate insulating film 12 is laminated, on which film 12 a source electrode 13 and a drain electrode 14 are in turn disposed. In the manufacturing method, the source electrode 13 and the drain electrode 14 are formed into predetermined shapes, and then a channel layer 15 containing the zinc oxide is formed into a predetermined shape with an ink jet method. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种制造底栅型晶体管的方法，而不损害氧化锌并且不会使用使用简单操作的喷墨方法而劣化指示质量，并且当将氧化锌用作半导体元件。解决方案：底栅型晶体管的制造方法适于使得栅极电极11形成在玻璃基板10上成为预定形状，然后层叠栅极绝缘膜12，其上膜12为源极电极13和漏电极14依次设置。在制造方法中，将源电极13和漏电极14形成为规定的形状，然后利用喷墨法将含有氧化锌的沟道层15形成为规定的形状。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004335792A Oxide semiconductor light emitting device 有权
公开(公告)号：JP2004335792A
公开(公告)日：2004-11-25
申请号：JP2003130552
申请日：2003-05-08
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01L33/06 , H01L33/28 , H01L33/42 , H01L33/52 , H01L33/62 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting device that is superior in light emitting characteristics and power saving. SOLUTION: A quantum well light emitting layer 103 is formed by laminating alternately an Mg 0.1 Zn 0.9 O barrier layer and a Cd 0.1 Zn 0.9 O well layer. Thus, the confinement effect of the Cd 0.1 Zn 0.9 O well layer is improved and the light emitting characteristic and power saving can be made high. COPYRIGHT: (C)2005,JPO&NCIPI

7. 发明专利

JP2004335712A Oxide semiconductor light emitting element and its processing method 审中-公开
标题翻译：氧化物半导体发光元件及其加工方法
公开(公告)号：JP2004335712A
公开(公告)日：2004-11-25
申请号：JP2003129129
申请日：2003-05-07
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01L21/3065 , H01L21/306 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/28 , H01L33/40 , H01L33/46 , H01S5/327 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting element which has excellent light emitting characteristics and in which a manufacturing yield is high and reliability is high, and to provide a method for processing the same. SOLUTION: An n-type ZnO buffer layer 102, an n-type Mg 0.1 Zn 0.9 O clad layer 103, an n-type ZnO light guide layer 104, a quantum well active layer 105, a p-type ZnO light guide layer 106, a p-type Mg 0.1 Zn 0.9 O first clad layer 107, an MG 0.15 Zn 0.85 O etching stop layer 108, a p-type Mg 0.1 Zn 0.9 O clad layer 109, and a p-type ZnO contact layer 110, are sequentially laminated in this order on an n-type ZnO single crystal substrate 101. The MG 0.15 Zn 0.85 O etching stop layer 108 is doped with N as an acceptor impurity in the concentration of 5×10 19 cm -3 , and is doped with Ga as a donor impurity in the concentration of 1×10 17 cm -3 . COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供发光特性优异且制造成品率高，可靠性高的氧化物半导体发光元件，并提供其加工方法。解决方案：n型ZnO缓冲层102，n型Mg 0.1 0.9 O覆层103，n型ZnO导光层104 ，量子阱有源层105，p型ZnO导光层106，p型Mg <0.1> Zn 0.9 O第一覆盖层107，MG 0.05 Sn蚀刻阻挡层108，p型Mg 0.1 0.9 O覆层109，以及 p型ZnO接触层110依次顺序层叠在n型ZnO单晶衬底101上.G0S0S0S0S0S0S0S0蚀刻停止层108为掺杂有浓度为5×10 3 3的N作为受主杂质，并且以1×10 5的浓度掺杂有作为施主杂质的Ga， SP> 17 厘米 -3 。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004319673A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2004319673A
公开(公告)日：2004-11-11
申请号：JP2003110059
申请日：2003-04-15
申请人： Masashi Kawasaki , Hideo Ono , Sharp Corp , シャープ株式会社 , 英男大野 , 雅司川崎
发明人： YOSHIOKA HIROTO , SUGIHARA TOSHINORI , FUJITA TATSUYA , KAWASAKI MASASHI , ONO HIDEO
IPC分类号： H01L21/28 , H01L21/336 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability which is provided with a field effect type thin film transistor wherein the interface of a semiconductor layer and a gate insulating layer is suitably controlled.
SOLUTION: The semiconductor device is provided with a substrate 1, a source electrode 2 and a drain electrode 3 which are formed on the substrate 1, a semiconductor layer 6 which is in contact with at least a part of an upper surface of the source electrode 2 and at least a part of an upper surface of the drain electrode 3, a gate electrode 9 which is formed on the semiconductor layer 6 and covers the semiconductor layer 6, and a gate insulating layer 11 formed between the semiconductor layer 6 and the gate electrode 9. The gate insulating layer 11 is provided with at least a first insulating layer 7 in contact with the upper surface of the semiconductor layer 6, and a second insulating layer 8 formed on the first insulating layer 7 which has an almost identical form to the semiconductor layer 6. The second insulating layer 8 has an almost identical form to the gate electrode 9.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种高可靠性的半导体器件，其具有适当地控制半导体层和栅极绝缘层的界面的场效应型薄膜晶体管。解决方案：半导体器件设置有形成在基板1上的基板1，源电极2和漏电极3，与基板1的上表面的至少一部分接触的半导体层6 源电极2和漏电极3的上表面的至少一部分，形成在半导体层6上并覆盖半导体层6的栅电极9以及形成在半导体层6之间的栅极绝缘层11 栅电极9.栅绝缘层11设置有至少与半导体层6的上表面接触的第一绝缘层7和形成在第一绝缘层7上的第二绝缘层8，第二绝缘层8具有几乎第二绝缘层8具有与栅电极9几乎相同的形式。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004207440A Electrode of oxide semiconductor, oxide semiconductor light-emitting device, and their manufacturing method 审中-公开
公开(公告)号：JP2004207440A
公开(公告)日：2004-07-22
申请号：JP2002373851
申请日：2002-12-25
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01L33/28 , H01L33/42 , H01S5/042 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide an ohmic electrode having superior coherency to a p-type oxide semiconductor and low resistance, and also to provide an oxide semiconductor light-emitting device using the ohmic electrode for achieving excellent light-emitting characteristics, and methods for manufacturing the ohmic electrode and the oxide semiconductor light-emitting device. SOLUTION: The electrode of the oxide semiconductor, the oxide semiconductor light-emitting device having the electrode, and their manufacturing method: are formed on the oxide semiconductor having p-type conduction; comprise a metal electrode layer containing at least one kind of element selected from Pd, Rh, Ru, Os, Ir, and Pt, and an oxide electrode layer that has a junction surface with both of the p-type oxide semiconductor and the metal electrode layer and contains a transition metal oxide; and have a structure, where the oxide electrode layer and the metal electrode layer come into contact with the p-type oxide semiconductor. COPYRIGHT: (C)2004,JPO&NCIPI

10. 发明专利

JP2004200389A Oxide semiconductor light emitting element 审中-公开
公开(公告)号：JP2004200389A
公开(公告)日：2004-07-15
申请号：JP2002366841
申请日：2002-12-18
申请人： Masashi Kawasaki , Sharp Corp , シャープ株式会社 , 雅司川崎
发明人： SAITO HAJIME , KAWASAKI MASASHI
IPC分类号： H01S5/347
摘要： PROBLEM TO BE SOLVED: To obtain an oxide semiconductor light emitting element that can form a reflection end face by a simple method and has improved optical characteristics and reliability.
SOLUTION: An n-type buffer layer 2, an n-type cladding layer 3, an n-type light guide layer 4, a non-doped quantum well active layer 5, a p-type light guide layer 6, a p-type cladding layer 7, and a p-type contact layer 8, are laminated on an n-type ZnO single-crystal substrate 1 with (1 -1 0 0) surface as a growth surface by a ZnO-based semiconductor. A ridge stripe in the direction of [1 1 -2 0] is formed on the contact layer 8 and the cladding layer 7. A (1 1 -2 0) surface vertical to the ridge stripe is subjected to cleavage to form a light reflection end face. As a result, by setting two mutually orthogonal easy cleavage surfaces that are easy cleavage surfaces to be the growth surface and the reflection end face, the reflection end face can be formed by simple cleavage. As a result, as compared with a comparison example where the reflection end face is formed by dry etching, an oscillation threshold current can be decreased by 30%, and element lifetime can be increased by five times.
COPYRIGHT: (C)2004,JPO&NCIPI

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