会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明专利
    • Organic thin film transistor, organic semiconductor thin film and organic semiconductor material
    • 有机薄膜晶体管,有机半导体薄膜和有机半导体材料
    • JP2014082248A
    • 2014-05-08
    • JP2012227655
    • 2012-10-15
    • Fujifilm Corp富士フイルム株式会社
    • KITAMURA SATORUTAKAKU KOJITOYAMA WATARU
    • H01L51/05C07D493/04H01L29/786H01L51/30
    • H01L51/0073C07D493/04C07F7/0856H01L51/0061H01L51/0068H01L51/0071H01L51/0072H01L51/0094H01L51/0558
    • PROBLEM TO BE SOLVED: To provide an organic thin film transistor which has high carrier mobility and less change in threshold voltage after repetitive driving.SOLUTION: An organic thin film transistor using a compound represented by a general formula (1) in a semiconductor active layer {where R-Reach independently represent a hydrogen atom or a substituent group, and adjacent two of R-Rmay form a substituted or unsubstituted aromatic hydrocarbon ring, and at least one of R-Ris a substituent group represented by a general formula (W) or an aromatic hydrocarbon ring formed by adjacent two of R-Rhas a substituent group represented by the general formula (W). (* represents a binding position to a benzo bis benzofuran skeleton; L represents a divalent linking group of a single bond or a specific structure; R represents a substituted or unsubstituted alkyl group having two or more carbon atoms, an oligo-ethyleneoxy group where the number of repeating ethyleneoxy units is two and more, or an oligo-siloxane group having two or more silicon atoms)}.
    • 要解决的问题:提供一种在重复驱动之后载流子迁移率高,阈值电压变化小的有机薄膜晶体管。利用半导体活性层 {其中R-Reach独立地表示氢原子或取代基,R-Rmay中的相邻两个形成取代或未取代的芳香族烃环,R-R 2中的至少一个为通式(W)表示的取代基, 或由通式(W)表示的取代基的相邻的R-Rhas形成的芳香族烃环。 (*表示与苯并双苯并呋喃骨架的结合位置; L表示单键或特定结构的二价连接基团; R表示取代或未取代的碳原子数2以上的烷基,低级亚乙基氧基, 重复乙烯氧基单元数为2个以上,或具有2个以上硅原子的低聚硅氧烷基}}。