专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5569501A Diamond-like carbon films from a hydrocarbon helium plasma 失效
标题翻译：来自烃氦等离子体的类金刚石碳膜
公开(公告)号：US5569501A
公开(公告)日：1996-10-29
申请号：US483685
申请日：1995-06-07
申请人： Fredric D. Bailey , Douglas A. Buchanan , Alessandro C. Callegari , Howard M. Clearfield , Fuad E. Doany , Donis G. Flagello , Harold J. Hovel , Douglas C. Latulipe, Jr. , Naftali E. Lustig , Andrew T. S. Pomerene , Sampath Purushothaman , Christopher M. Scherpereel , David E. Seeger , Jane M. Shaw
发明人： Fredric D. Bailey , Douglas A. Buchanan , Alessandro C. Callegari , Howard M. Clearfield , Fuad E. Doany , Donis G. Flagello , Harold J. Hovel , Douglas C. Latulipe, Jr. , Naftali E. Lustig , Andrew T. S. Pomerene , Sampath Purushothaman , Christopher M. Scherpereel , David E. Seeger , Jane M. Shaw
IPC分类号： G03F1/08 , C01B31/06 , C08J7/06 , C23C8/26 , C23C8/50 , C23C16/26 , C23C16/27 , C23C16/50 , C30B29/04 , G02B1/10 , G11B5/255 , H01L21/31 , H01L21/314 , B05D3/06 , H05H1/24
CPC分类号： C23C16/26 , G02B1/105 , G11B5/255 , Y10S427/104 , Y10S427/106 , Y10T428/30
摘要： The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.
摘要翻译：本发明涉及通过来自烃/氦等离子体的低温等离子体增强化学气相沉积（PECVD）将金刚石状碳膜沉积到衬底上的改进方法。更具体地说，本发明的类金刚石碳膜通过采用以氦作为等离子体气体大量稀释的乙炔沉积在基板上。使用本发明的方法形成的膜的特征在于是无定形的并且具有与通常对于金刚石膜观察到的那些相当的介电强度。然而，更重要的是，本文制造的膜是热稳定的，光学透明的，在紫外范围内是吸收性的并且是硬的，因此使得它们对于各种各样的应用是非常需要的。

2. 发明授权

US5470661A Diamond-like carbon films from a hydrocarbon helium plasma 失效
标题翻译：来自烃氦等离子体的类金刚石碳膜
公开(公告)号：US5470661A
公开(公告)日：1995-11-28
申请号：US1374
申请日：1993-01-07
申请人： Fredric D. Bailey , Douglas A. Buchanan , Alessandro C. Callegari , Howard M. Clearfield , Fuad E. Doany , Donis G. Flagello , Harold J. Hovel , Douglas C. Latulipe, Jr. , Naftali E. Lustig , Andrew T. S. Pomerene , Sampath Purushothaman , Christopher M. Scherpereel , David E. Seeger , Jane M. Shaw
发明人： Fredric D. Bailey , Douglas A. Buchanan , Alessandro C. Callegari , Howard M. Clearfield , Fuad E. Doany , Donis G. Flagello , Harold J. Hovel , Douglas C. Latulipe, Jr. , Naftali E. Lustig , Andrew T. S. Pomerene , Sampath Purushothaman , Christopher M. Scherpereel , David E. Seeger , Jane M. Shaw
IPC分类号： G03F1/08 , C01B31/06 , C08J7/06 , C23C8/26 , C23C8/50 , C23C16/26 , C23C16/27 , C23C16/50 , C30B29/04 , G02B1/10 , G11B5/255 , H01L21/31 , H01L21/314 , B24B3/02
CPC分类号： C23C16/26 , G02B1/105 , G11B5/255 , Y10S427/104 , Y10S427/106 , Y10T428/30
摘要： The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.
摘要翻译：本发明涉及通过来自烃/氦等离子体的低温等离子体增强化学气相沉积（PECVD）将金刚石状碳膜沉积到衬底上的改进方法。更具体地说，本发明的类金刚石碳膜通过采用氦气作为等离子体气体大量稀释的乙炔沉积在基板上。使用本发明的方法形成的膜的特征在于是无定形的并且具有与通常对于金刚石膜观察到的那些相当的介电强度。然而，更重要的是，本文制造的膜是热稳定的，光学透明的，在紫外范围内是吸收性的并且是硬的，从而使得它们对于各种各样的应用是非常需要的。

3. 发明授权

US5793836A X-ray mask pellicle 失效
标题翻译： X射线面具防护薄膜
公开(公告)号：US5793836A
公开(公告)日：1998-08-11
申请号：US716657
申请日：1996-09-06
申请人： Juan R. Maldonado , Raul E. Acosta , Marie Angelopoulos , Fuad E. Doany , Chandrasekhar Narayan , Andrew T. S. Pomerene , Jane M. Shaw , Kurt R. Kimmel
发明人： Juan R. Maldonado , Raul E. Acosta , Marie Angelopoulos , Fuad E. Doany , Chandrasekhar Narayan , Andrew T. S. Pomerene , Jane M. Shaw , Kurt R. Kimmel
IPC分类号： G03F1/00 , G03F1/22 , G03F1/62 , G03F1/64 , G03F7/20 , H01L21/027 , H05K1/00
CPC分类号： G03F1/62 , G03F1/22 , G03F1/64 , G03F7/70691
摘要： An X-ray mask pellicle is capable of protecting the X-ray mask from contaminants and the wafer from contact with the X-ray absorber material of the mask. The X-ray mask pellicle is sufficiently thin to allow X-ray exposure at the required mask to wafer gaps yet is sufficiently durable, replaceable, tough and X-ray resistant to be used in X-ray lithography. A thin (organic or inorganic) X-ray mask pellicle to be placed covering the X-ray mask pattern area is fabricated as a thin film and attached to a support ring. A selected area of the pellicle film, tailored to cover the absorber pattern in the X-ray mask, is etched to decrease its thickness to below 2 .mu.m. If the thin film of the pellicle is not itself conductive, a thin conductive film may be coated on both sides. In an alternative embodiment, the separation between the pellicle and the X-ray mask can be achieved by forming the mask with a stepped profile.
摘要翻译： X射线掩模防护薄膜组件能够保护X射线掩模免受污染物和晶片与掩模的X射线吸收材料的接触。 X射线掩模防护薄膜是足够薄的，以允许所需掩模的X射线暴露于晶片间隙，而且在X射线光刻中使用的是足够耐用的，可更换的，坚固的和耐X射线的。将覆盖X射线掩模图案区域的薄（有机或无机）X射线掩模防护薄膜组件制成薄膜并附着在支撑环上。为了覆盖X射线掩模中的吸收体图案而定制的防护薄膜的选定区域被蚀刻以将其厚度减小到低于2μm。如果防护薄膜的薄膜本身不是导电的，则可以在两侧涂覆薄导电膜。在替代实施例中，防护薄膜组件和X射线掩模之间的分离可以通过以阶梯轮廓形成掩模来实现。

4. 发明授权

US08192638B2 Method for manufacturing multiple layers of waveguides 有权
标题翻译：制造多层波导的方法
公开(公告)号：US08192638B2
公开(公告)日：2012-06-05
申请号：US12517692
申请日：2008-08-29
申请人： Andrew T. S. Pomerene , Timothy J. Conway , Craig M. Hill , Mark Jaso
发明人： Andrew T. S. Pomerene , Timothy J. Conway , Craig M. Hill , Mark Jaso
IPC分类号： B29D11/00 , G02B6/10 , G02F1/00
CPC分类号： G02B6/12002 , B82Y20/00 , G02B6/1223 , G02B6/132 , G02B6/136
摘要： A method for manufacturing multiple layers of waveguides is disclosed. Initially, a first cladding layer is deposited on a substrate, a first inner cladding layer is then deposited on the first cladding layer, and a first waveguide material is deposited on the first inner cladding layer. The first inner cladding layer and the first waveguide material are then selectively etched to form a first waveguide layer. Next, a second inner cladding layer followed by a second cladding layer are deposited on the first waveguide layer. The second inner cladding layer and the second cladding layer are removed by using a chemical-mechanical polishing process selective to the first waveguide material. A third inner cladding layer followed by a second waveguide material are deposited on the first waveguide material. The third inner cladding layer and the second waveguide material are then selectively etched to form a second waveguide layer. Finally, a fourth inner cladding layer followed by a third cladding layer are deposited on the second waveguide layer.
摘要翻译：公开了制造多层波导的方法。首先，在基板上沉积第一包层，然后在第一包层上沉积第一内包层，在第一内包层上沉积第一波导材料。然后选择性地蚀刻第一内包层和第一波导材料以形成第一波导层。接下来，在第一波导层上沉积第二内包层和第二覆层。通过使用对第一波导材料选择性的化学机械抛光工艺来除去第二内包层和第二包覆层。在第一波导材料上沉积第三内包层和第二波导材料。然后选择性地蚀刻第三内包层和第二波导材料以形成第二波导层。最后，在第二波导层上沉积第四内包层和第三覆层。

5. 发明授权

US5493864A Apparatus for cooling or heating liquids and method of using same 失效
标题翻译：用于冷却或加热液体的设备及其使用方法
公开(公告)号：US5493864A
公开(公告)日：1996-02-27
申请号：US259783
申请日：1994-06-14
申请人： Andrew T. S. Pomerene , Terence W. Spoor , Robert R. DeVenuto , Anthony V. DiStefano
发明人： Andrew T. S. Pomerene , Terence W. Spoor , Robert R. DeVenuto , Anthony V. DiStefano
IPC分类号： B67D3/00 , F25B21/04 , H01L35/30 , F25B21/02 , B67D5/62 , F28F13/00
CPC分类号： F25B21/04 , B67D3/0009 , B67D3/0022 , H01L35/30
摘要： A manifold design which provides for highly efficient cooling or heating of flowing liquids using a small number of thermoelectric elements is constructed of a thermally insulting material. On exterior surface of at least two sides of the manifold, open channel are formed for use in defining a liquid flow path. On the interior of the manifold there are a plurality of internal chambers, one internal chamber for each side having an exterior channel. These internal chambers are essentially equal in size and are preferably symmetrically disposed within the manifold in alignment with the sides. The channels on the outside of the manifold and the chambers on the inside of the manifold are connected in such a way that liquid would flow in an alternating series of channel and chamber in a single liquid flow path through the manifold. The channels on the exterior of the manifold are sealed by placing a thermally conductive cover plate over each side of the manifold. A thermoelectric device is then placed on the outside of each cover plate. Finally, means for transferring heat to or from the exterior surfaces of the thermoelectric devices provided.
摘要翻译：使用热绝缘材料构成了使用少量热电元件提供流动液体的高效冷却或加热的歧管设计。在歧管的至少两侧的外表面上，形成开口通道以用于限定液体流路。在歧管的内部有多个内部腔室，每个侧面的一个内部腔室具有外部通道。这些内部室的尺寸基本上相等，并且优选地对称地设置在歧管内与侧面对齐。歧管外侧的通道和歧管内部的腔室以这样的方式连接，使得液体将在通过歧管的单个液体流动路径中的交替的通道和腔室中流动。通过在歧管的每一侧上放置导热盖板来密封歧管外部的通道。然后将热电装置放置在每个盖板的外侧。最后，提供用于将热量传递到所提供的热电装置的外表面的装置。

6. 发明授权

US5155777A Scattered light blocking layer for optoelectronic receivers 失效
标题翻译：用于光电接收器的散射光阻挡层
公开(公告)号：US5155777A
公开(公告)日：1992-10-13
申请号：US721731
申请日：1991-06-26
申请人： Marie Angelopoulos , Mitchell S. Cohen , Andrew T. S. Pomerene , Dennis L. Rogers
发明人： Marie Angelopoulos , Mitchell S. Cohen , Andrew T. S. Pomerene , Dennis L. Rogers
IPC分类号： H01L21/027 , G02B6/122 , G02B6/42 , H01L31/10
CPC分类号： G02B6/122
摘要： Methods, apparatus and manufacturing processes are set forth which reduce the affects of scattered light in electro-optical devices, fiber optic links, etc., through the use of radiation sensitive compounds which, for example, can be easily applied to a semiconductor wafer when fabricating a solid state integrated receiver. According to the invention, a given radiation sensitive compound is transformed into a light blocking material (i.e., a material that will not transmit light) as a result of a lithographic (and in some cases a photolithographic) process. The resultant blocking material may be easily removed from any regions which is designed to receive transmitted light (for example, detector regions); while any other light sensitive regions remain covered (i.e., are protected) by the blocking material at the conclusion of the process.
摘要翻译：提出了通过使用例如可以容易地应用于半导体晶片的辐射敏感化合物来减少电光装置，光纤链路等中的散射光的影响的方法，装置和制造方法，制造固态集成接收机。根据本发明，由于光刻（并且在一些情况下是光刻）工艺，给定的辐射敏感化合物被转化成阻光材料（即，不透光的材料）。所得到的阻挡材料可以容易地从被设计成接收透射光的区域（例如，检测器区域）中去除; 而在该过程结束时，任何其它光敏区域仍然被封闭材料覆盖（即被保护）。

7. 发明申请

US20120252158A1 Method for Manufacturing Lateral Germanium Detectors 失效
标题翻译：制造侧向锗探测器的方法
公开(公告)号：US20120252158A1
公开(公告)日：2012-10-04
申请号：US12521853
申请日：2008-10-27
申请人： Daniel N. Carothers , Craig M. Hill , Andrew T. S. Pomerene , Vu A. Vu , Robert Kamocsai , Timothy J. Conway
发明人： Daniel N. Carothers , Craig M. Hill , Andrew T. S. Pomerene , Vu A. Vu , Robert Kamocsai , Timothy J. Conway
IPC分类号： H01L31/18
CPC分类号： H01L27/1467
摘要： An improved method for manufacturing a lateral germanium detector is disclosed. A detector window is opened through an oxide layer to expose a doped single crystalline silicon layer situated on a substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished to leave only a small portion around the single crystal germanium layer. A dielectric layer is deposited on the amorphous germanium layer and the single crystal germanium layer. Using resist masks and ion implants, multiple doped regions are formed on the single crystal germanium layer. After opening several oxide windows on the dielectric layer, a refractory metal layer is deposited on the doped regions to form multiple germanide layers.
摘要翻译：公开了用于制造侧向锗检测器的改进方法。检测器窗口通过氧化物层打开以暴露位于衬底上的掺杂单晶硅层。接下来，在检测器窗口内生长单晶锗层，并且在氧化物层上生长非晶锗层。然后抛光无定形锗层以在单晶锗层周围仅留下一小部分。介电层沉积在非晶锗层和单晶锗层上。使用抗蚀剂掩模和离子注入，在单晶锗层上形成多个掺杂区。在介电层上打开几个氧化物窗后，在掺杂区域上沉积难熔金属层以形成多个锗化物层。

8. 发明授权

US09305779B2 Method for growing germanium epitaxial films 有权
标题翻译：生长锗外延膜的方法
公开(公告)号：US09305779B2
公开(公告)日：2016-04-05
申请号：US12539003
申请日：2009-08-11
申请人： Daniel N. Carothers , Craig M. Hill , Andrew T. S. Pomerene , Vu A. Vu
发明人： Daniel N. Carothers , Craig M. Hill , Andrew T. S. Pomerene , Vu A. Vu
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , H01L21/02
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02579 , H01L21/0262 , H01L21/02645 , H01L21/02658
摘要： A method for growing germanium epitaxial films is disclosed. Initially, a silicon substrate is preconditioned with hydrogen gas. The temperature of the preconditioned silicon substrate is then decreased, and germane gas is flowed over the preconditioned silicon substrate to form an intrinsic germanium seed layer. Next, a mixture of germane and phosphine gases can be flowed over the intrinsic germanium seed layer to produce an n-doped germanium seed layer. Otherwise, a mixture of diborane and germane gases can be flowed over the intrinsic germanium seed layer to produce a p-doped germanium seed layer. At this point, a bulk germanium layer can be grown on top of the doped germanium seed layer.
摘要翻译：公开了一种用于生长锗外延膜的方法。首先，用氢气预处理硅衬底。然后，预处理的硅衬底的温度降低，并且锗烷气体在预处理的硅衬底上流动以形成固有的锗种子层。接下来，可以将锗烷烃和磷化氢气体的混合物流过本征锗种子层，以产生n掺杂的锗种子层。否则，乙硼烷和锗烷气体的混合物可以流过本征锗种子层，以产生p掺杂锗种子层。此时，可以在掺杂的锗种子层的顶部上生长大块锗层。

9. 发明授权

US5908732A Polymer compositions for high resolution resist applications 失效
标题翻译：用于高分辨抗蚀剂应用的聚合物组合物
公开(公告)号：US5908732A
公开(公告)日：1999-06-01
申请号：US717644
申请日：1996-09-23
申请人： Ari Aviram , Karen Elizabeth Petrillo , Andrew T. S. Pomerene , David Earle Seeger
发明人： Ari Aviram , Karen Elizabeth Petrillo , Andrew T. S. Pomerene , David Earle Seeger
IPC分类号： G03F7/039 , G03F7/26 , G03F7/32 , G03F7/30 , G03F7/38
CPC分类号： G03F7/26 , G03F7/039 , G03F7/322 , Y10S430/143 , Y10S430/167 , Y10S430/168
摘要： Positive lithographic patterns are produced by imagewise exposing to actinic light, x-ray or e-beam copolymers of 2-hydroxyalkyl methacrylate and/or 2-hydroxyalkyl acrylate with alkylmethacrylate and/or alkylacrylate, and then developing the polymer in a developer.
摘要翻译：通过将甲基丙烯酸2-羟基烷基酯和/或丙烯酸2-羟烷基酯与甲基丙烯酸烷基酯和/或丙烯酸烷基酯成像曝光于光化光，X-射线或电子束共聚物，然后在显影剂中显影该聚合物，从而产生正光刻图案。

10. 发明授权

US08871554B2 Method for fabricating butt-coupled electro-absorptive modulators 有权
标题翻译：对接耦合电吸收调制器的制造方法
公开(公告)号：US08871554B2
公开(公告)日：2014-10-28
申请号：US12523801
申请日：2008-08-29
申请人： Craig M. Hill , Andrew T. S. Pomerene
发明人： Craig M. Hill , Andrew T. S. Pomerene
IPC分类号： H01L21/00 , G02F1/025
CPC分类号： G02F1/025
摘要： A method for fabricating butt-coupled electro-absorptive modulators is disclosed. A butt-coupled electro-absorptive modulator with minimal dislocations in the electro-absorptive material is produced by adding a dielectric spacer for lining the coupling region before epitaxially growing the SiGe or other electro-absorptive material. It has been determined that during the SiGe growth, the current process has exposed single crystal silicon at the bottom of the hole and exposed amorphous silicon on the sides. SiGe growth on the amorphous silicon is expected to have more dislocations than single crystal silicon. There should also be dislocations or fissures where the SiGe growth from the each nucleation source finally join. Thus, a dielectric sidewall can protect an exposed waveguide face from any etching from an aggressive surface preparation prior to epi growth.
摘要翻译：公开了一种制造对接耦合的电吸收调制器的方法。通过在外延生长SiGe或其他电吸收材料之前添加用于衬垫耦合区域的电介质间隔物来产生电吸收材料中具有最小位错的对接耦合电吸收调制器。已经确定，在SiGe生长期间，目前的工艺已经在孔的底部露出单晶硅并在侧面露出非晶硅。 SiGe在非晶硅上的生长预期具有比单晶硅更多的位错。也应该存在来自每个成核源的SiGe生长最终加入的位错或裂缝。因此，电介质侧壁可以在外延生长之前保护暴露的波导面不受腐蚀性表面处理的任何蚀刻。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式