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1. 发明申请

US20100182496A1 PROGRAMMABLE MICRO-ELECTROMECHANICAL MICROSHUTTER ARRAY 有权
标题翻译：可编程微电子显微镜阵列
公开(公告)号：US20100182496A1
公开(公告)日：2010-07-22
申请号：US12616995
申请日：2009-11-12
申请人： Frederick T. Brady , Robert M. Guidash , J. Kelly Lee , Marek W. Kowarz , Robert Andosca
发明人： Frederick T. Brady , Robert M. Guidash , J. Kelly Lee , Marek W. Kowarz , Robert Andosca
IPC分类号： H04N5/235 , G02B26/02
CPC分类号： G02B26/02 , G02B26/0841
摘要： A microshutter array has a frame having a light transmissive portion. Linear microshutter elements extend across the light transmissive portion and in parallel to each other. Each microshutter element has a flat blade extended in a length direction and first and second torsion arms extending outwards from each side of the blade in the length direction, the blade extending across the light transmissive portion. A control circuit provides a separately-controlled and independent voltage that is applied to each of the linear microshutter elements. A controller sets the respective voltages applied to each of the linear microshutter elements.
摘要翻译：微型扫描器阵列具有具有透光部分的框架。线性微型振荡器元件延伸穿过光透射部分并且彼此平行。每个微型振动元件具有在长度方向上延伸的平坦叶片，并且第一和第二扭转臂在长度方向上从叶片的每侧向外延伸，叶片延伸穿过透光部分。控制电路提供分别控制和独立的电压，其施加到每个线性微型振荡器元件。控制器设置施加到每个线性微动开关元件的相应电压。

2. 发明授权

US08194178B2 Programmable micro-electromechanical microshutter array 有权
标题翻译：可编程微机电微阵列
公开(公告)号：US08194178B2
公开(公告)日：2012-06-05
申请号：US12616995
申请日：2009-11-12
申请人： Frederick T. Brady , Robert M. Guidash , J. Kelly Lee , Marek W. Kowarz , Robert Andosca
发明人： Frederick T. Brady , Robert M. Guidash , J. Kelly Lee , Marek W. Kowarz , Robert Andosca
IPC分类号： H04N5/235 , G02B7/00 , G02B26/06 , G02B26/10 , G02B26/12
CPC分类号： G02B26/02 , G02B26/0841
摘要： A microshutter array has a frame having a light transmissive portion. Linear microshutter elements extend across the light transmissive portion and in parallel to each other. Each microshutter element has a flat blade extended in a length direction and first and second torsion arms extending outwards from each side of the blade in the length direction, the blade extending across the light transmissive portion. A control circuit provides a separately-controlled and independent voltage that is applied to each of the linear microshutter elements. A controller sets the respective voltages applied to each of the linear microshutter elements.
摘要翻译：微型扫描器阵列具有具有透光部分的框架。线性微型振荡器元件延伸穿过光透射部分并且彼此平行。每个微型振动元件具有在长度方向上延伸的平坦叶片，并且第一和第二扭转臂在长度方向上从叶片的每侧向外延伸，叶片延伸穿过透光部分。控制电路提供分别控制和独立的电压，其施加到每个线性微型振荡器元件。控制器设置施加到每个线性微动开关元件的相应电压。

3. 发明申请

US20100148295A1 BACK-ILLUMINATED CMOS IMAGE SENSORS 审中-公开
标题翻译：后置照明CMOS图像传感器
公开(公告)号：US20100148295A1
公开(公告)日：2010-06-17
申请号：US12565182
申请日：2009-09-23
申请人： Frederick T. Brady , Robert M. Guidash
发明人： Frederick T. Brady , Robert M. Guidash
IPC分类号： H01L31/0352 , H01L29/00 , H01L31/02 , H01L21/76
CPC分类号： H01L27/14601 , H01L21/304 , H01L27/1464 , H01L27/14687 , H01L27/14689
摘要： A semiconductor wafer includes one or more back-illuminated image sensors each formed in a portion of the semiconductor wafer. One or more thinning etch stops are formed in other portions of the semiconductor wafer.
摘要翻译：半导体晶片包括各自形成在半导体晶片的一部分中的一个或多个背照式图像传感器。在半导体晶片的其它部分中形成一个或多个变薄蚀刻停止。

4. 发明申请

US20110042770A1 WAFER LEVEL PROCESSING FOR BACKSIDE ILLUMINATED IMAGE SENSORS 有权
标题翻译：背面照明图像传感器的水平加工
公开(公告)号：US20110042770A1
公开(公告)日：2011-02-24
申请号：US12940133
申请日：2010-11-05
申请人： Frederick T. Brady
发明人： Frederick T. Brady
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14636 , H01L27/14618 , H01L27/14627 , H01L27/1464 , H01L27/14683 , H01L2924/0002 , H01L2924/00
摘要： A backside illuminated image sensor comprises a sensor layer having a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. A color filter array is formed on a backside surface of the oxide layer, and a transparent cover is attached to the backside surface of the oxide layer overlying the color filter array. Redistribution metal conductors are in electrical contact with respective bond pad conductors through respective openings in the dielectric layer. A redistribution passivation layer is formed over the redistribution metal conductors, and contact metallizations are in electrical contact with respective ones of the respective redistribution metal conductors through respective openings in the redistribution passivation layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括传感器层，其具有多个像素阵列的感光元件，邻近传感器层的背面的氧化物层以及与传感器层的前侧表面相邻的至少一个电介质层。在氧化物层的背面形成有滤色器阵列，在覆盖滤色器阵列的氧化物层的背面附着有透明盖。再分布金属导体通过介电层中的相应开口与相应的接合焊盘导体电接触。再分布钝化层形成在再分布金属导体上，并且接触金属化通过再分布钝化层中的相应开口与相应的再分布金属导体中的相应的一个电接触。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

5. 发明申请

US20100006908A1 BACKSIDE ILLUMINATED IMAGE SENSOR WITH SHALLOW BACKSIDE TRENCH FOR PHOTODIODE ISOLATION 审中-公开
标题翻译：背面照明的图像传感器，带有背光隔离膜，用于光电隔离
公开(公告)号：US20100006908A1
公开(公告)日：2010-01-14
申请号：US12169810
申请日：2008-07-09
申请人： Frederick T. Brady
发明人： Frederick T. Brady
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14632 , H01L27/1463 , H01L27/1464 , H01L27/14687
摘要： A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括实现像素阵列的多个感光元件的传感器层，邻近传感器层的背面的氧化物层以及与传感器层的前侧表面相邻的至少一个电介质层。传感器层还包括形成在传感器层的背面中的多个背面沟槽，并被布置成在各对感光元件之间提供隔离。背面沟槽具有形成在传感器层中的相应的背面场隔离注入区域，并且所得结构提供相邻光敏元件之间的载流子复合和串扰的减小。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

6. 发明申请

US20080265295A1 METHODS, STRUCTURES AND SYTEMS FOR AN IMAGE SENSOR DEVICE FOR IMPROVING QUANTUM EFFICIENCY OF RED PIXELS 有权
标题翻译：用于提高红色像素的量子效率的图像传感器设备的方法，结构和动作
公开(公告)号：US20080265295A1
公开(公告)日：2008-10-30
申请号：US11741259
申请日：2007-04-27
申请人： Frederick T. Brady
发明人： Frederick T. Brady
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14689
摘要： A method and structure for providing a high energy implant in only the red pixel location of a CMOS image sensor. The implant increases the photon collection depth for the red pixels, which in turn increases the quantum efficiency for the red pixels. In one embodiment, a CMOS image sensor is formed on an p-type substrate and the high energy implant is a p-type implant that creates a p-type ground contact under the red pixel, thus reducing dark non-uniformity effects. In another embodiment, a CMOS image sensor is formed on an n-type substrate and a high energy p-type implant creates a p-type region under only the red pixel to increase photon collection depth, which in turn increases the quantum efficiency for the red pixels.
摘要翻译：一种仅在CMOS图像传感器的红色像素位置提供高能量注入的方法和结构。植入物增加了红色像素的光子收集深度，这进而提高了红色像素的量子效率。在一个实施例中，在p型衬底上形成CMOS图像传感器，并且高能量注入是在红色像素之下产生p型接地触点的p型注入，从而减少黑暗的不均匀效应。在另一个实施例中，CMOS图像传感器形成在n型衬底上，高能p型注入器仅在红色像素下产生p型区域，以增加光子收集深度，这进而提高了量子效率红色像素。

7. 发明授权

US06638832B2 Elimination of narrow device width effects in complementary metal oxide semiconductor (CMOS) devices 失效
公开(公告)号：US06638832B2
公开(公告)日：2003-10-28
申请号：US09741028
申请日：2000-12-21
申请人： Frederick T. Brady , Jon Maimon
发明人： Frederick T. Brady , Jon Maimon
IPC分类号： H01L2176
CPC分类号： H01L21/26506 , H01L21/76237 , H01L21/823412 , H01L21/823481
摘要： Neutral conductivity ions, preferably germanium, are implanted through the oxide of a metal oxide semiconductor after isolation formation to provide a nearly constant threshold voltage for transistor operation independent of transistor channel width as device geometries are scaled down in size. The present invention sets forth a method for fabricating a metal oxide semiconductor (MOS) structure that controls threshold voltage Vt in the structure, the method including generating an isolation region of the semiconductor structure on a major surface of a silicon substrate, growing a thin oxide on the major surface of the semiconductor structure, implanting a large diameter neutral conductivity type ion into the major surface of the semiconductor structure through the thin oxide, annealing the semiconductor structure having the neutral conductivity ion implanted therein, and processing the semiconductor structure to create MOS devices having a near constant threshold voltage over a range of device channel widths.

8. 发明授权

US08017426B2 Color filter array alignment mark formation in backside illuminated image sensors 有权
标题翻译：背面照明图像传感器中的滤色器阵列对准标记形成
公开(公告)号：US08017426B2
公开(公告)日：2011-09-13
申请号：US12169709
申请日：2008-07-09
申请人： Frederick T. Brady
发明人： Frederick T. Brady
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/1464 , H01L2224/16225
摘要： A backside illuminated image sensor includes a sensor layer comprising photosensitive elements of the pixel array, an epitaxial layer formed on a frontside surface of the sensor layer, and a color filter array formed on a backside surface of the sensor layer. The epitaxial layer comprises polysilicon color filter array alignment marks formed in locations corresponding to respective color filter array alignment mark openings in the frontside surface of the sensor layer. The color filter array is aligned to the color filter array alignment marks of the epitaxial layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括包含像素阵列的感光元件的传感器层，形成在传感器层的前侧表面上的外延层和形成在传感器层的背面上的滤色器阵列。外延层包括在与传感器层的前侧表面中的各个滤色器阵列对准标记开口对应的位置处形成的多晶硅滤色器阵列对准标记。滤色器阵列与外延层的滤色器阵列对准标记对准。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

9. 发明授权

US07915067B2 Backside illuminated image sensor with reduced dark current 有权
标题翻译：具有减少暗电流的背面照明图像传感器
公开(公告)号：US07915067B2
公开(公告)日：2011-03-29
申请号：US12169723
申请日：2008-07-09
申请人： Frederick T. Brady , John P. McCarten
发明人： Frederick T. Brady , John P. McCarten
IPC分类号： H01L21/383
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/14601 , H01L27/1464 , H01L27/14683
摘要： A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.
摘要翻译：背面照明图像传感器包括实现像素阵列的多个感光元件的传感器层和邻近传感器层的背面的氧化物层。传感器层包括种子层和形成在种子层上的外延层，种子层具有横截面掺杂分布，其中指定的掺杂剂基本上限制在传感器层的像素阵列区域。掺杂分布有利地减少了在传感器层和氧化物层之间的界面处产生的暗电流。图像传感器可以在数字照相机或其他类型的数字成像装置中实现。

10. 发明授权

US06762128B2 Apparatus and method for manufacturing a semiconductor circuit 有权
标题翻译：用于制造半导体电路的装置和方法
公开(公告)号：US06762128B2
公开(公告)日：2004-07-13
申请号：US10177915
申请日：2002-06-20
申请人： Paul A. Bernkopf , Frederick T. Brady , Nadim Haddad
发明人： Paul A. Bernkopf , Frederick T. Brady , Nadim Haddad
IPC分类号： H01L21302
CPC分类号： H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31608 , H01L21/76229
摘要： A method and an apparatus for manufacturing, via a single fabrication line, circuits that are radiation tolerant and also circuits that are radiation intolerant. When production calls for radiation-tolerant circuits, low-pressure chemical vapor deposition is advantageously used to deposit an electrically-insulating material, such as silicon dioxide, in trenches to provide electrical isolation between adjacent semiconductor devices. When production requires radiation-intolerant circuits, as may be required for export, then the trenches are filled via a procedure that deposits an electrically-insulating material that, on exposure to ionizing radiation, generates a suitably large amount of “positive charge traps.” One procedure suitable for creating such positive charge traps is high-density plasma chemical vapor deposition (HDPCVD).
摘要翻译：一种用于通过单个制造线制造耐辐射电路以及辐射不耐受的电路的方法和装置。当生产要求耐辐射电路时，低压化学气相沉积有利地用于在沟槽中沉积诸如二氧化硅的电绝缘材料，以在相邻的半导体器件之间提供电隔离。当生产需要耐辐射电路时，可能需要输出电路，然后通过沉积电绝缘材料的程序来填充沟槽，这些电绝缘材料在暴露于电离辐射时产生适当大量的“正电荷陷阱”。适用于产生这种正电荷陷阱的一种方法是高密度等离子体化学气相沉积（HDPCVD）。

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