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1. 发明授权

US06873544B2 Triple sample sensing for magnetic random access memory (MRAM) with series diodes 有权
标题翻译：具有串联二极管的磁性随机存取存储器（MRAM）的三次采样检测
公开(公告)号：US06873544B2
公开(公告)日：2005-03-29
申请号：US10696826
申请日：2003-10-30
申请人： Frederick A. Perner , Lung T. Tran , Kenneth J. Eldredge
发明人： Frederick A. Perner , Lung T. Tran , Kenneth J. Eldredge
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/15 , G11C11/16 , G11C13/004 , G11C27/02 , G11C2013/0057
摘要： A data storage device that includes an array of resistive memory cells. The resistive memory cells may include a magnetic tunnel junction (MTJ) and a thin-film diode. The device may include a circuit that is electrically connected to the array and that is also capable of monitoring a signal current flowing through a selected memory cell. Once the signal current has been monitored, the circuit is capable of comparing the signal current to an average reference current in order to determine which of a first resistance state and a second resistance state the selected memory cell is in. Also, a method for operating the data storage device.
摘要翻译：一种包括电阻式存储单元阵列的数据存储装置。电阻存储单元可以包括磁性隧道结（MTJ）和薄膜二极管。该装置可以包括电连接到阵列的电路，并且还能够监测流过所选择的存储器单元的信号电流。一旦已经监视了信号电流，电路就可以将信号电流与平均参考电流进行比较，以确定所选择的存储单元处于第一电阻状态和第二电阻状态。另外，一种操作方法数据存储设备。

2. 发明授权

US06757188B2 Triple sample sensing for magnetic random access memory (MRAM) with series diodes 有权
公开(公告)号：US06757188B2
公开(公告)日：2004-06-29
申请号：US10151915
申请日：2002-05-22
申请人： Frederick A. Perner , Lung T. Tran , Kenneth J. Eldredge
发明人： Frederick A. Perner , Lung T. Tran , Kenneth J. Eldredge
IPC分类号： G11C1100
CPC分类号： G11C11/15 , G11C11/16 , G11C13/004 , G11C27/02 , G11C2013/0057
摘要： A data storage device that includes an array of resistive memory cells. The resistive memory cells may include a magnetic tunnel junction (MTJ) and a thin-film diode. The device may include a circuit that is electrically connected to the array and that is also capable of monitoring a signal current flowing through a selected memory cell. Once the signal current has been monitored, the circuit is capable of comparing the signal current to an average reference current in order to determine which of a first resistance state and a second resistance state the selected memory cell is in. Also, a method for operating the data storage device.

3. 发明授权

US06262625B1 Operational amplifier with digital offset calibration 有权
标题翻译：具有数字偏移校准的运算放大器
公开(公告)号：US06262625B1
公开(公告)日：2001-07-17
申请号：US09430238
申请日：1999-10-29
申请人： Frederick A. Perner , Kenneth J. Eldredge , Lung T. Tran
发明人： Frederick A. Perner , Kenneth J. Eldredge , Lung T. Tran
IPC分类号： G01R1900
CPC分类号： B82Y10/00 , G11C11/15 , H03F1/304 , H03F3/45771 , H03F2203/45048 , H03F2203/45291 , H03F2203/45342 , H03F2203/45624 , H03F2203/45726
摘要： An operational amplifier includes transistors for providing a controlled current path. At least one of the transistors is in an isolated well in a substrate. Offset of the operational amplifier is corrected by applying a back gate bias voltage to at least one isolated well and changing impedance of the transistors. The proper back gate bias voltage and transistor impedance are determined by incrementally adjusting the back gate bias voltage and then incrementally adjusting the transistor impedance. Calibration values are stored in register memory. Such calibration may be performed by an auto offset calibration process.
摘要翻译：运算放大器包括用于提供受控电流路径的晶体管。至少一个晶体管处于衬底中的隔离阱中。通过对至少一个隔离阱施加背栅偏置电压并改变晶体管的阻抗来校正运算放大器的偏移。正确的背栅偏置电压和晶体管阻抗通过逐步调整背栅偏置电压然后逐渐调整晶体管阻抗来确定。校准值存储在寄存器存储器中。这种校准可以通过自动偏移校准过程来执行。

4. 发明授权

US06188615B1 MRAM device including digital sense amplifiers 有权
标题翻译： MRAM器件包括数字读出放大器
公开(公告)号：US06188615B1
公开(公告)日：2001-02-13
申请号：US09430611
申请日：1999-10-29
申请人： Frederick A. Perner , Kenneth J. Eldredge , Lung T. Tran
发明人： Frederick A. Perner , Kenneth J. Eldredge , Lung T. Tran
IPC分类号： G11C1604
CPC分类号： G11C11/15 , G11C7/067 , G11C16/32
摘要： Resistance of a selected memory cell in a Magnetic Random Access Memory (“MRAM”) device is sensed by a read circuit including a direct injection charge amplifier, an integrator capacitor and a digital sense amplifier. The direct injection charge amplifier supplies current to the integrator capacitor while maintaining an equipotential voltage on non-selected memory cells in the MRAM device. As the direct injection charge amplifier applies a fixed voltage to the selected memory cell, the sense amplifier measures integration time of a signal on the integrator. The signal integration time indicates whether the memory cell MRAM resistance is at a first state (R) or a second state (R+&Dgr;R).
摘要翻译：通过包括直接注入电荷放大器，积分器电容器和数字读出放大器的读取电路来检测磁性随机存取存储器（“MRAM”）器件中的所选存储单元的电阻。直接注入电荷放大器向积分器电容器提供电流，同时在MRAM器件中的未选择的存储单元上保持等电位电压。由于直接注入电荷放大器对所选择的存储单元施加固定电压，所以读出放大器测量积分器上信号的积分时间。信号积分时间表示存储单元MRAM电阻是处于第一状态（R）还是第二状态（R + DELTAR）。

5. 发明授权

US07376004B2 Increased magnetic memory array sizes and operating margins 有权
标题翻译：增加磁存储器阵列大小和运行裕度
公开(公告)号：US07376004B2
公开(公告)日：2008-05-20
申请号：US10661448
申请日：2003-09-11
申请人： James R. Eaton, Jr. , Frederick A. Perner , Lung T. Tran , Kenneth J. Eldredge
发明人： James R. Eaton, Jr. , Frederick A. Perner , Lung T. Tran , Kenneth J. Eldredge
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： G11C11/16
摘要： A method for making magnetic random access memories (MRAM) isolates each and every memory cell in an MRAM array during operation until selected. Some embodiments use series connected diodes for such electrical isolation. Only a selected one of the memory cells will then conduct current between respective ones of the bit and word lines. A better, more uniform distribution of read and data-write data access currents results to all the memory cells. In another embodiment, this improvement is used to increase the number of rows and columns to support a larger data array. In a further embodiment, such improvement is used to increase operating margins and reduce necessary data-write voltages and currents.
摘要翻译：用于制造磁随机存取存储器（MRAM）的方法在操作期间隔离MRAM阵列中的每个存储单元直到被选择。一些实施例使用用于这种电隔离的串联连接的二极管。只有选定的一个存储器单元将在相应的位和字线之间传导电流。读取和写入数据访问电流的更好，更均匀的分布会导致所有存储单元。在另一个实施例中，该改进用于增加支持较大数据阵列的行数和列数。在另一实施例中，这种改进用于增加操作裕度并减少必要的数据写入电压和电流。

6. 发明授权

US06317376B1 Reference signal generation for magnetic random access memory devices 有权
标题翻译：用于磁随机存取存储器件的参考信号产生
公开(公告)号：US06317376B1
公开(公告)日：2001-11-13
申请号：US09598671
申请日：2000-06-20
申请人： Lung T. Tran , Kenneth J. Eldredge
发明人： Lung T. Tran , Kenneth J. Eldredge
IPC分类号： G11C702
CPC分类号： G11C11/16 , G11C7/14 , G11C27/02
摘要： A Magnetic Random Access Memory (“MRAM”) device includes an array of memory cells. The device generates reference signals that can be used to determine the resistance states of each memory cell in the array, despite variations in resistance due to manufacturing tolerances and other factors such as temperature gradients across the array, electromagnetic interference and aging.
摘要翻译：磁性随机存取存储器（“MRAM”）装置包括一组存储单元。该器件产生可用于确定阵列中每个存储单元的电阻状态的参考信号，尽管由于制造公差和其他因素（例如阵列上的温度梯度，电磁干扰和衰老）导致的电阻变化。

7. 发明授权

US06597598B1 Resistive cross point memory arrays having a charge injection differential sense amplifier 有权
标题翻译：具有电荷注入差分读出放大器的电阻式交叉点存储器阵列
公开(公告)号：US06597598B1
公开(公告)日：2003-07-22
申请号：US10136782
申请日：2002-04-30
申请人： Lung T. Tran , Frederick A. Perner
发明人： Lung T. Tran , Frederick A. Perner
IPC分类号： G11C1700
CPC分类号： G11C7/067 , G11C7/062 , G11C11/16 , G11C16/28
摘要： A data storage device that includes a resistive cross point array of memory cells, a plurality of word lines, and a plurality of bit lines, and a sense amplifier that utilizes an injection charge amplifier is disclosed. The memory cells are arranged into multiple groups of one or more memory cells. The injection charge amplifier determines whether a sensed memory cell is in a first or second resistive state as compared to a reference cell.
摘要翻译：公开了一种数据存储装置，其包括存储器单元的电阻交叉点阵列，多个字线和多个位线，以及利用注入电荷放大器的读出放大器。存储单元被布置成多组一个或多个存储单元。注入电荷放大器确定感测到的存储单元是否处于与参考单元相比的第一或第二电阻状态。

8. 发明授权

US06584029B2 One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells 失效
标题翻译：一次性可编程存储器，使用保险丝/反熔丝和垂直取向的熔丝单元存储单元
公开(公告)号：US06584029B2
公开(公告)日：2003-06-24
申请号：US09924577
申请日：2001-08-09
申请人： Lung T. Tran , Thomas C. Anthony , Frederick A. Perner
发明人： Lung T. Tran , Thomas C. Anthony , Frederick A. Perner
IPC分类号： G11C700
CPC分类号： H01L23/5252 , G11C13/0004 , G11C17/16 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A one-time programmable (“OTP”) memory includes one or more memory arrays stacked on top of each other. The OTP memory array is a cross-point array where unit memory cells are formed at the cross-points. The unit memory cell may include a fuse and an anti-fuse in series with each other or may include a vertically oriented fuse. Programming the memory may include the steps of selecting unit memory cells, applying a writing voltage such that critical voltage drop across the selected cells occur. This causes the anti-fuse of the cell to break down to a low resistance. The low resistance of the anti-fuse causes a high current pulse to be delivered to the fuse, which in turn melts the fuse to an open state. Reading the memory may include the steps of selecting unit memory cells for reading, applying a reading voltage to the selected memory cells and measuring whether current is present or not. Equipotential sensing may be used to read the memory.
摘要翻译：一次性可编程（“OTP”）存储器包括堆叠在彼此之上的一个或多个存储器阵列。 OTP存储器阵列是在交叉点处形成单位存储单元的交叉点阵列。单元存储单元可以包括彼此串联的保险丝和反熔丝，或者可以包括垂直定向的保险丝。对存储器进行编程可以包括选择单元存储器单元，施加写入电压以使得跨所选单元格出现临界电压降的步骤。这使得电池的反熔丝分解成低电阻。反熔丝的低电阻导致高电流脉冲被输送到保险丝，熔丝将熔丝熔化成打开状态。读取存储器可以包括以下步骤：选择用于读取的单元存储单元，向所选存储单元施加读取电压并测量是否存在电流。等电位感测可用于读取存储器。

9. 发明授权

US06385111B2 Reference signal generation for magnetic random access memory devices 有权
标题翻译：用于磁随机存取存储器件的参考信号产生
公开(公告)号：US06385111B2
公开(公告)日：2002-05-07
申请号：US09809707
申请日：2001-03-14
申请人： Lung T. Tran , Kenneth J. Eldredge
发明人： Lung T. Tran , Kenneth J. Eldredge
IPC分类号： G11C702
CPC分类号： G11C11/16 , G11C7/14 , G11C27/02
摘要： A Magnetic Random Access Memory (“MRAM”) device includes an array of memory cells. The device generates reference signals that can be used to determine the resistance states of each memory cell in the array, despite variations in resistance due to manufacturing tolerances and other factors such as temperature gradients across the array, electromagnetic interference and aging.
摘要翻译：磁性随机存取存储器（“MRAM”）装置包括一组存储单元。该器件产生可用于确定阵列中每个存储单元的电阻状态的参考信号，尽管由于制造公差和其他因素（例如阵列上的温度梯度，电磁干扰和衰老）导致的电阻变化。

10. 发明授权

US07339817B2 Thermally-assisted switching of magnetic memory elements 有权
标题翻译：磁存储元件的热辅助切换
公开(公告)号：US07339817B2
公开(公告)日：2008-03-04
申请号：US10315748
申请日：2002-12-10
申请人： Janice H. Nickel , Lung T. Tran
发明人： Janice H. Nickel , Lung T. Tran
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1675
摘要： A magnetic memory element is written to by heating the memory element and applying at least one magnetic field to the memory element.
摘要翻译：通过加热存储元件并将至少一个磁场施加到存储元件来写入磁存储元件。

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